Circuit structure of high-power high-jump-speed filter
By using high-voltage and high-response speed MOS tubes and specific fixed control circuits in high-power frequency hopping filters, the problem of relatively slow jumping speed of high-power frequency hopping filters in the prior art is solved, and 10us is achieved high jump speed.
Patent Information
- Application Number
- CN202421229242.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-05-31
- Publication Date
- 2025-02-14
- Estimated Expiration
- 2034-05-31
AI Technical Summary
The jump speed of existing high-power frequency hopping filters is relatively slow, usually around 30μs, which cannot meet the demand for high jump speed.
The circuit structure of a high-power high-speed jump filter is adopted, including a high voltage, high response speed MOS tube and a specific fixed control circuit. By optimizing the connection method between the resistor and the MOS tube, a high jump speed of 10us is achieved.
By using high voltage, high response speed MOS tubes and specific fixed control circuits, the high jump speed of the high power frequency hopping filter is achieved, and the jump speed is increased to 10us, significantly exceeding the 30μs of the prior art.
Smart Images
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Abstract
Description
Technical Field
[0001] The utility model relates to a circuit structure of a high-power high-speed jump filter, belonging to the technical field of high-speed jump filters. Background Art
[0002] The existing high-power frequency-hopping filters are affected by factors such as product withstand voltage, power, and device response speed, resulting in a relatively slow frequency-hopping speed of the filter products, generally around 30μs. Summary of the invention
[0003] The technical problem to be solved by the utility model is to provide a circuit structure of a high-power high-speed filter to solve the problems existing in the above-mentioned prior art.
[0004] The technical scheme adopted by the utility model is: a circuit structure of a high-power high-speed filter, comprising a resistor R1, a resistor R2, a resistor R3, a resistor R4, a MOS tube 1, a MOS tube 2, a MOS tube 3 and a diode D1, one end of the resistor R1 and one end of the resistor R2 are connected to each other and then connected to a +500V voltage input terminal, the other end of the resistor R1 is connected to the drain of the MOS tube 1, the grid of the MOS tube 2 and the negative electrode of the diode, the other end of the resistor R2 is connected to the drain of the MOS tube 2, the grid of the MOS tube 1 is connected to one end of the resistor R3, the source of the MOS tube 1 is connected to a -3.3V voltage input terminal, the other end of the resistor R3 and one end of the resistor R4 are connected to a +3.3V voltage input terminal Q1, the other end of the resistor R4 is connected to the grid of the MOS tube 3, the source of the MOS tube 2 is connected to the positive electrode of the diode D1 and the drain of the MOS tube 3 and then used as a voltage output terminal HV1, and the source of the MOS tube 3 is connected to the -3.3V voltage input terminal.
[0005] Beneficial effects of the utility model: Compared with the prior art, the MOS tube 1, MOS tube 2 and MOS tube 3 used in the utility model are MOS tubes with high voltage resistance and high response speed. The specific design parameters of the MOS tube can meet the use requirements of high-power and high-speed products. The MOS tube 1 and MOS tube 2 used are matched with the corresponding fixed control circuit (matched with resistor R1), so that the high-power frequency hopping filter can achieve a high hopping speed of 10us. BRIEF DESCRIPTION OF THE DRAWINGS
[0006] Figure 1 It is the circuit schematic;
[0007] Figure 2 This is the circuit simulation result diagram. DETAILED DESCRIPTION
[0008] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.
[0009] Example 1: Figure 1-2 As shown, a circuit structure of a high-power high-speed filter includes a resistor R1, a resistor R2, a resistor R3, a resistor R4, a MOS tube 1, a MOS tube 2, a MOS tube 3 and a diode D1, one end of the resistor R1 and one end of the resistor R2 are connected to each other and then connected to a +500V voltage input terminal, the other end of the resistor R1 is connected to the drain of the MOS tube 1, the gate of the MOS tube 2 and the negative electrode of the diode, the other end of the resistor R2 is connected to the drain of the MOS tube 2, the gate of the MOS tube 1 is connected to one end of the resistor R3, the source of the MOS tube 1 is connected to a -3.3V voltage input terminal, the other end of the resistor R3 and one end of the resistor R4 are connected to a +3.3V voltage input terminal Q1, the other end of the resistor R4 is connected to the gate of the MOS tube 3, the source of the MOS tube 2 is connected to the positive electrode of the diode D1 and the drain of the MOS tube 3 and then serves as a voltage output terminal HV1, and the source of the MOS tube 3 is connected to the -3.3V voltage input terminal.
[0010] Figure 1 Among them, MOS1, MOS2, and MOS3 are the core devices of the circuit and are also the main devices for high-power frequency-hopping filters to achieve high hopping speeds.
[0011] The MOS tube 1, MOS tube 2 and MOS tube 3 used in the utility model are MOS tubes with high withstand voltage and high response speed. The specific design parameters of the MOS tubes can meet the use requirements of high-power and high-speed products. In conjunction with the fixed control circuit in the above figure, the high-power frequency hopping filter can achieve a high hopping speed of 10us.
[0012] The working principle of the above circuit is: when the input voltage of Q1 is +3.3V, MOS1 and MOS3 are in the working state, and MOS2 is in the cut-off state. At this time, the output voltage of HV1 is -3.3V; when the input voltage of Q1 is -3.3V, MOS1 and MOS3 are in the cut-off state, and MOS2 is in the working state. At this time, the output voltage of HV1 is +498V. Under this working state, the time required to reach the full output of +498V is the key to affecting the jump speed of the filter product.
[0013] The implementation conditions of the high-power high-speed filter of the utility model are as follows:
[0014] 1. The input test signal is 0dBm.
[0015] 2. Input voltage: VBB=+500V; VCC=+3.3V; VEE=-3.3V.
[0016] 3. Current conditions: Ivbb≤30mA; Ivcc≤100mA; Ivee≤2A.
[0017] The value of device R1 in the above circuit is also the main parameter for achieving high jump speed of high power filter.
[0018] The jump speed results of the above circuit simulation are as follows Figure 2 As shown, the theoretical simulation result is 5.2us.
[0019] The above description is only a specific implementation method of the present utility model, but the protection scope of the present utility model is not limited thereto. Any technician familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed by the present utility model, which should be included in the protection scope of the present utility model. Therefore, the protection scope of the present utility model should be based on the protection scope of the claims.
Claims
1. A circuit structure of a high-power high-speed filter, characterized in that: It includes a resistor R1, a resistor R2, a resistor R3, a resistor R4, a MOS tube 1, a MOS tube 2, a MOS tube 3 and a diode D1. One end of the resistor R1 and one end of the resistor R2 are connected to each other and then connected to a +500V voltage input terminal. The other end of the resistor R1 is connected to the drain of the MOS tube 1, the gate of the MOS tube 2 and the negative electrode of the diode. The other end of the resistor R2 is connected to the drain of the MOS tube 2. The gate of the MOS tube 1 is connected to one end of the resistor R3. The source of the MOS tube 1 is connected to a -3.3V voltage input terminal. The other end of the resistor R3 and one end of the resistor R4 are connected to a +3.3V voltage input terminal Q1. The other end of the resistor R4 is connected to the gate of the MOS tube 3. The source of the MOS tube 2 is connected to the positive electrode of the diode D1 and the drain of the MOS tube 3 to serve as a voltage output terminal HV1. The source of the MOS tube 3 is connected to the -3.3V voltage input terminal.