Pyramid suede preparation system
Through plasma-enhanced chemical vapor deposition process and additive velvet making technology, the problem of excessive velvet making costs is solved, and the efficient preparation of pyramid suede is achieved, reducing production costs and improving performance.
Patent Information
- Application Number
- CN202420490325.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-03-14
- Publication Date
- 2025-02-28
- Estimated Expiration
- 2034-03-14
AI Technical Summary
In the existing velvet making process, alkali and velvet making additives consume a lot, resulting in excessive velvet making costs.
The plasma-enhanced chemical vapor deposition process is used to reprocess the silicon powder to prepare spherical large-size silicon particles, and the suede model is designed through additive velvet making, and the silicon powder is sprayed on the surface of the silicon wafer to prepare a high-definition pyramid structure of the tower foundation and tower.
Improves production efficiency, reduces production costs, and improves the light utilization rate and battery device performance of pyramid suede.
Smart Images
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Abstract
Description
Technical Field
[0001] The present application relates to the technical field of solar cells, and in particular to a pyramid velvet preparation system. Background Art
[0002] PERC solar cells have a wide range of market application prospects, and the current maximum efficiency can reach about 24.7%. In the entire manufacturing process, texturing is the first step, which is to remove the surface damage layer of the original silicon wafer and prepare the velvet pyramid. The velvet structure of the pyramid can reflect the incident light multiple times to increase the utilization rate of light, thereby improving the performance of the battery device.
[0003] The general texturing process includes pre-cleaning, texturing, alkali washing, acid washing and slow pulling. In the texturing process, alkali and corresponding texturing additives are needed for catalysis, and the different corrosion rates of different crystal faces on the silicon surface are used to form a pyramid structure. This texturing method will inevitably cause a large amount of hazardous chemicals to be consumed, which increases the cost to a certain extent. Summary of the invention
[0004] Based on this, it is necessary to provide a pyramid velvet preparation system to address the problem of high velvet making costs.
[0005] The present application provides a pyramid velvet preparation system, comprising:
[0006] A feeding box with a feeding port provided on the feeding box;
[0007] A plasma generator, wherein a feed port of the plasma generator is connected to a feed box;
[0008] A reaction part, wherein the feed port of the reaction part is connected to the discharge port of the plasma generator; the inner cavity of the reaction part is filled with cooling gas;
[0009] A texturing section, wherein the feed inlet of the texturing section is connected with the discharge outlet of the reaction section, and the discharge outlet of the texturing section is opposite to the silicon wafer to be texturized;
[0010] A vacuum pumping part, the vacuum pumping part is communicated with the inner cavity of the plasma generator, and the vacuum pumping part is arranged close to the feed port of the plasma generator; and
[0011] An air inlet is communicated with the inner cavity of the plasma generator and is passed with an inert mixed gas. The air inlet is arranged close to a feed port of the plasma generator.
[0012] In one embodiment, the texturing unit comprises:
[0013] A feed nozzle, wherein the feed port of the feed nozzle is connected to the discharge port of the reaction part;
[0014] A processing table, on which the silicon wafer to be textured is mounted; the processing table is located below the discharge port of the feed nozzle, and the discharge port of the feed nozzle is opposite to the silicon wafer to be textured; and
[0015] A mounting bracket is mounted on the processing table, and the feed nozzle is mounted on the mounting bracket.
[0016] In one embodiment, the mounting bracket comprises:
[0017] A first frame, which is arranged in a vertical direction and connected to the processing table; and
[0018] The second frame is located above the processing table and is connected to the first frame; the feed nozzle is installed on the second frame.
[0019] In one embodiment, the second frame is slidably connected to the first frame; or, the second frame is hinged to the first frame.
[0020] In one of the embodiments, a plurality of sliding rollers are installed at the bottom of the texturing part.
[0021] In one embodiment, the vacuum pumping unit comprises:
[0022] A vacuum pumping pipeline, wherein a first end of the vacuum pumping pipeline is connected to the inner cavity of the plasma generator, and the first end of the vacuum pumping pipeline is arranged close to the feed port of the plasma generator;
[0023] a vacuum pump connected to the second end of the vacuum pipe; and
[0024] The first flow control component is installed on the vacuum pipe.
[0025] In one embodiment, the air intake portion comprises:
[0026] An air inlet pipeline, wherein a first end of the air inlet pipeline is in communication with an inner cavity of the plasma generator, and the first end of the air inlet pipeline is arranged close to a feed inlet of the plasma generator;
[0027] an air intake source connected to the second end of the air intake pipe; the air intake source is configured as an inert mixed gas; and
[0028] The second flow control component is installed on the air intake pipe.
[0029] In one embodiment, it also includes:
[0030] The collecting chamber is connected between the discharge port of the reaction part and the feed port of the texturing part.
[0031] In one embodiment, the reaction unit comprises:
[0032] A reaction cavity, wherein the feed port of the reaction cavity is connected to the discharge port of the plasma generator, and the discharge port of the reaction cavity is connected to the feed port of the texturing part;
[0033] at least one cooling gas pipeline, connected to the reaction chamber; and
[0034] At least one powder absorber is installed in the reaction chamber.
[0035] In one embodiment, the reaction unit further comprises:
[0036] The filter is located in the reaction cavity, and the feed port of the filter is communicated with the reaction cavity, and the discharge port of the filter is communicated with the discharge port of the reaction cavity.
[0037] The present application reprocesses silicon powder through a plasma enhanced chemical vapor deposition process to prepare spherical large-sized silicon particles, and at the same time uses additive texturing to design a velvet model, sprays silicon powder on the surface of a silicon wafer for additive texturing, and prepares a high-definition pyramid structure of a tower base and a tower, thereby improving production efficiency and reducing production costs. BRIEF DESCRIPTION OF THE DRAWINGS
[0038] FIG1 shows a schematic structural diagram of a pyramid velvet preparation system provided in an embodiment of the present application.
[0039] FIG. 2 shows a schematic structural diagram of the texturing section in FIG. 1 .
[0040] Figure Number:
[0041] 100-Feeding box;
[0042] 101-Feeding port;
[0043] 200-Plasma generator;
[0044] 300-reaction part;
[0045] 301-reaction cavity;
[0046] 302- cooling air pipeline;
[0047] 303-powder absorber;
[0048] 304-Filter;
[0049] 400-velvet making department;
[0050] 401-feed nozzle;
[0051] 402-processing table;
[0052] 403-Mounting bracket;
[0053] 431-First frame;
[0054] 432- Second frame;
[0055] 500-vacuum pumping unit;
[0056] 501-vacuum pipe;
[0057] 502-vacuum pump;
[0058] 600-air intake;
[0059] 601-intake pipe;
[0060] 602- air intake source;
[0061] 700 - Collection room;
[0062] 800-Silicon wafer to be textured;
[0063] 801-Pyramid suede. DETAILED DESCRIPTION
[0064] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below in conjunction with the accompanying drawings. In the following description, many specific details are set forth to facilitate a full understanding of the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the present application, so the present application is not limited by the specific embodiments disclosed below.
[0065] In the description of the present application, it should be understood that if the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. appear, the orientation or position relationship indicated by these terms is based on the orientation or position relationship shown in the accompanying drawings, which is only for the convenience of describing the present application and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application.
[0066] In addition, if the terms "first" or "second" appear, these terms are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the features. In the description of this application, if the term "plurality" appears, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.
[0067] In this application, unless otherwise clearly specified and limited, if the terms "installed", "connected", "connected", "fixed" and the like appear, these terms should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integrated connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to the specific circumstances.
[0068] In the present application, unless otherwise clearly specified and limited, if there is a description that a first feature is "above" or "below" a second feature, etc., or similar descriptions appear, it may mean that the first and second features are in direct contact, or that the first and second features are in indirect contact through an intermediate medium. Moreover, the first feature being "above", "above" and "above" the second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. The first feature being "below", "below" and "below" the second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.
[0069] It should be noted that if an element is referred to as being "fixed to" or "disposed on" another element, it may be directly on the other element or there may be a central element. If an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be a central element at the same time. If any, the terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used in this application are for illustrative purposes only and do not represent the only implementation method.
[0070] Referring to Fig. 1, Fig. 1 shows a schematic diagram of the structure of a pyramid velvet preparation system provided in an embodiment of the present application. The pyramid velvet preparation system provided in an embodiment of the present application comprises: a feeding box 100, a plasma generator 200, a reaction unit 300, a velvet making unit 400, a vacuum unit 500 and an air intake unit 600. A feeding port 101 is provided on the feeding box 100; the feeding port of the plasma generator 200 is communicated with the feeding box 100; the feeding port of the reaction part 300 is communicated with the discharging port of the plasma generator 200; the inner cavity of the reaction part 300 is filled with cooling gas; the feeding port of the texturing part 400 is communicated with the discharging port of the reaction part 300, and the discharging port of the texturing part 400 is opposite to the silicon wafer 800 to be texturized; the vacuuming part 500 is communicated with the inner cavity of the plasma generator 200, and the vacuuming part 500 is arranged close to the feeding port of the plasma generator 200; the air inlet part 600 is communicated with the inner cavity of the plasma generator 200 and is introduced with an inert mixed gas, and the air inlet part 600 is arranged close to the feeding port of the plasma generator 200.
[0071] In the present application, the vacuum pumping unit 500 evacuates the inner cavity of the plasma generator 200, and at the same time, the air inlet unit 600 introduces an inert mixed gas into the inner cavity of the plasma generator 200, so that the inner cavity of the plasma generator 200 is in a vacuum state, where the inert mixed gas can be nitrogen, argon or a nitrogen-argon mixed gas. After the silicon powder in the feed box 100 is introduced into the plasma generator 200, the blades on both sides of the plasma generator 200 similar to the graphite boat apply an outward bias to energize, so that the silicon powder is in an electric field (as shown in reference to FIG. 1), and then the solid silicon powder is transformed into silicon atoms in a plasma state under a high temperature (500 degrees Celsius to 800 degrees Celsius). Then, the silicon atoms in the plasma state in the plasma generator 200 are carried by the carrier gas of the inert mixed gas provided by the air inlet unit 600 through the plasma generator 200 and enter the reaction unit 300. The cooling gas flows into the reaction part 300, and the silicon atoms in the plasma state gradually form silicon powder particles after being cooled. The obtained silicon powder particles are then passed into the texturing part 400, and then sprayed from the discharge port of the texturing part 400 to the preset additive area of the silicon wafer 800 to be texturized.
[0072] In some of the embodiments, the feed port of the reaction part 300 is located in the middle of the reaction part 300 , so that silicon atoms in a plasma state in the plasma generator 200 can enter the reaction part 300 in a central feeding manner.
[0073] In some embodiments, the silicon atoms in the plasma state may be carried by the carrier gas of the inert mixed gas provided by the gas inlet 600 through the plasma generator 200 and enter the reaction part 300 at a rate of 20 mg / min to 50 mg / min.
[0074] In some of the embodiments, when the feeding box 100 needs to be refilled, silicon powder can be put into the feeding box 100 through the feeding port 101 .
[0075] The present application reprocesses silicon powder into silicon powder particles through a plasma enhanced chemical vapor deposition process, and uses additive texturing to design a velvet model, spraying the silicon powder particles on a preset additive area of a silicon wafer 800 to be texturized, thereby obtaining a high-definition pyramid velvet surface 801 for the tower base and the tower, thereby improving production efficiency and reducing production costs.
[0076] Referring to FIG. 2 , FIG. 2 shows a schematic diagram of the structure of the texturing section in FIG. 1 . In one embodiment of the present application, the texturing section 400 includes: a feed nozzle 401, a processing table 402, and a mounting bracket 403. The feed port of the feed nozzle 401 is connected to the discharge port of the reaction section 300; the silicon wafer 800 to be texturized is mounted on the processing table 402; the processing table 402 is located below the discharge port of the feed nozzle 401, and the discharge port of the feed nozzle 401 is opposite to the silicon wafer 800 to be texturized; the mounting bracket 403 is mounted on the processing table 402, and the feed nozzle 401 is mounted on the mounting bracket 403. The silicon powder particles obtained in the reaction part 300 are passed into the feed port of the feed nozzle 401 through the discharge port of the reaction part 300. The discharge port of the feed nozzle 401 is opposite to the silicon wafer 800 to be textured installed on the processing table 402, and the silicon powder particles are sprayed to the preset additive area of the silicon wafer 800 to be textured.
[0077] In some of the embodiments, the silicon wafer 800 to be textured is mounted on a movable working plate on a processing table 402, and the movable working plate on the processing table 402 is electrically connected to the controller. During the operation of the texture making section 400, the controller first "partitions" the finished pyramid velvet surface into layer sections, and determines the preset additive areas on each layer section. The controller drives the movable working plate on the processing table 402 to move, thereby driving the silicon wafer 800 to be textured to move, so that the discharge port of the feed nozzle 401 is aligned with the preset additive area of the silicon wafer 800 to be textured and the silicon powder particles are sprayed onto the preset additive area of the silicon wafer 800 to be textured, and the above steps are repeated layer by layer to complete the pyramid velvet surface 801 on the silicon wafer 800 to be textured.
[0078] In some embodiments, the feed nozzle 401 is electrically connected to the controller. During the operation of the texturing section 400, the controller first "partitions" the finished pyramid velvet surface into layer sections, and determines the preset additive areas on each layer section. The controller drives the feed nozzle 401 to move, so that the discharge port of the feed nozzle 401 is aligned with the preset additive area of the silicon wafer 800 to be texturized and the silicon powder particles are sprayed onto the preset additive area of the silicon wafer 800 to be texturized, and the above steps are repeated layer by layer to obtain the pyramid velvet surface 801 on the silicon wafer 800 to be texturized.
[0079] In some embodiments, the mounting bracket 403 includes: a first frame 431 and a second frame 432, wherein the first frame 431 is arranged in a vertical direction and is connected to the processing table 402; the second frame 432 is located above the processing table 402, and the second frame 432 is hingedly connected to the first frame 431; and the feed nozzle 401 is installed on the second frame 432.
[0080] Optionally, the second frame 432 is slidably connected to the first frame 431; the second frame 432 can slide up and down on the first frame 431 to adjust the distance between the feed nozzle 401 and the silicon wafer 800 to be textured. The second frame 432 is hinged to the first frame 431 to maintain a stable installation between the second frame 432 and the first frame 431.
[0081] In some of the embodiments, a plurality of sliding rollers are installed at the bottom of the processing table 402 to facilitate the movement of the processing table 402 .
[0082] In some of the embodiments, a plurality of sliding rollers are installed at the bottom of the mounting bracket 403 to facilitate the movement of the mounting bracket 403 .
[0083] In some of the embodiments, a plurality of sliding rollers are installed at the bottom of the processing table 402 and the mounting bracket 403 to facilitate the movement of the processing table 402 and the mounting bracket 403 .
[0084] In some embodiments, the vacuum pumping part 500 includes: a vacuum pumping pipe 501, a vacuum pump 502 and a first flow control element. The first end of the vacuum pumping pipe 501 is connected to the inner cavity of the plasma generator 200, and the first end of the vacuum pumping pipe 501 is arranged close to the feed port of the plasma generator 200; the vacuum pump 502 is connected to the second end of the vacuum pumping pipe 501; and the first flow control element is installed on the vacuum pumping pipe 501. In this embodiment, the vacuum pump 502 evacuates the inner cavity of the plasma generator 200 through the vacuum pumping pipe 501, so that the inner cavity of the plasma generator 200 is in a vacuum state, and the first flow control element is used to adjust the evacuation rate of the vacuum pump 502.
[0085] In some embodiments, the air intake part 600 includes: an air intake pipe 601, an air intake source 602, and a second flow control component. The first end of the air intake pipe 601 is connected to the inner cavity of the plasma generator 200, and the first end of the air intake pipe 601 is arranged close to the feed port of the plasma generator 200; the air intake source 602 is connected to the second end of the air intake pipe 601; and is installed on the air intake pipe 601. In this embodiment, the air intake source 602 passes the inert mixed gas air intake pipe 601 into the inner cavity of the plasma generator 200, where the inert mixed gas can be nitrogen, argon, or a nitrogen-argon mixed gas. At the same time, the air intake rate of the air intake source 602 of the second flow control component is used to adjust.
[0086] In some embodiments, a collecting chamber 700 is further included. The collecting chamber 700 is connected between the discharge port of the reaction part 300 and the feed port of the texturing part 400. The collecting chamber 700 is mainly used to collect the silicon powder particles produced by the reaction part 300, and pass the collected silicon powder particles into the feed nozzle 401 in the texturing part 400 according to the production requirements.
[0087] In some embodiments, the reaction part 300 includes: a reaction cavity 301, at least one cooling air pipeline 302 and at least one powder absorber 303. The feed port of the reaction cavity 301 is connected to the discharge port of the plasma generator 200, and the discharge port of the reaction cavity 301 is connected to the feed port of the texturing part 400; at least one cooling air pipeline 302 is connected to the reaction cavity 301; and at least one powder absorber 303 is installed in the reaction cavity 301.
[0088] The cooling air flow is passed into the reaction cavity 301 through the cooling air pipe 302, so that the silicon atoms in the plasma state gradually form silicon powder particles after being cooled, and the powder absorber 303 is mainly used to absorb the impurities in the reaction cavity 301 to maintain the cleanliness of the reaction cavity 301. Finally, the obtained silicon powder particles are passed into the texturing part 400 (or the obtained silicon powder particles are first passed into the collection chamber 700 and then into the texturing part 400).
[0089] In an optional embodiment, the powder absorber 303 may have graphene built in to facilitate the impurity adsorption effect.
[0090] In an optional embodiment, the powder absorber 303 may have a built-in vibration unit, and the vibration of the vibration unit can improve the absorption effect of impurities in the reaction cavity 301.
[0091] In some embodiments, the reaction section 300 further includes: a filter 304. The filter 304 is located in the reaction cavity 301, and the feed port of the filter 304 is communicated with the reaction cavity 301, and the discharge port of the filter 304 is communicated with the discharge port of the reaction cavity 301. The filter 304 is mainly used to filter out silicon powder particles with too large particle size, so that the particle size of silicon powder entering the texturing section can be within a preset range, thereby improving the texturing effect of the texturing section. Optionally, the preset range of the particle size of silicon powder entering the texturing section is not more than 400nm.
[0092] In some embodiments, the plurality of cooling gas pipes 302 are evenly distributed on the reaction cavity 301. Optionally, any two cooling gas pipes 302 can be arranged opposite to each other on the reaction cavity 301, and the two cooling gas pipes 302 can form convection in the reaction cavity 301 to improve the cooling effect of the reaction cavity 301.
[0093] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.
[0094] The above-described embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be construed as limiting the scope of the patent application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent application shall be subject to the attached claims.
Claims
1. A pyramid velvet preparation system, characterized in that: include: Feeding box (100), a feeding port (101) is provided on the feeding box (100); A plasma generator (200), wherein a feed port of the plasma generator (200) is connected to the feed box (100); A reaction part (300), wherein the feed port of the reaction part (300) is connected to the discharge port of the plasma generator (200); the inner cavity of the reaction part (300) is filled with cooling gas; A texturing section (400), wherein the feed port of the texturing section (400) is connected to the discharge port of the reaction section (300), and the discharge port of the texturing section (400) is opposite to the silicon wafer (800) to be texturized; A vacuum pumping part (500), the vacuum pumping part (500) being in communication with the inner cavity of the plasma generator (200), and the vacuum pumping part (500) being arranged close to a feed port of the plasma generator (200); and An air inlet (600), the air inlet (600) being in communication with the inner cavity of the plasma generator (200) and introducing an inert mixed gas, the air inlet (600) being arranged close to a feed port of the plasma generator (200).
2. The pyramid velvet preparation system according to claim 1, characterized in that: The texturing section (400) comprises: A feed nozzle (401), wherein a feed port of the feed nozzle (401) is connected to a discharge port of the reaction part (300); a processing table (402), the silicon wafer to be textured (800) being mounted on the processing table (402); the processing table (402) being located below the discharge port of the feed nozzle (401), and the discharge port of the feed nozzle (401) being opposite to the silicon wafer to be textured (800); and A mounting bracket (403) is mounted on the processing table (402), and the feed nozzle (401) is mounted on the mounting bracket (403).
3. The pyramid velvet preparation system according to claim 2, characterized in that: The mounting bracket (403) comprises: a first frame (431), the first frame (431) being arranged in a vertical direction, and the first frame (431) being connected to the processing table (402); and A second frame (432), the second frame (432) is located above the processing table (402), and the second frame (432) is connected to the first frame (431); the feed nozzle (401) is installed on the second frame (432).
4. The pyramid velvet preparation system according to claim 3, characterized in that: The second frame (432) is slidably connected to the first frame (431); or the second frame (432) is hinged to the first frame (431).
5. The pyramid velvet preparation system according to claim 1, characterized in that: A plurality of sliding rollers are installed at the bottom of the texturing part (400).
6. The pyramid velvet preparation system according to claim 1, characterized in that: The vacuum pumping unit (500) comprises: A vacuum pipe (501), wherein a first end of the vacuum pipe (501) is in communication with an inner cavity of the plasma generator (200), and the first end of the vacuum pipe (501) is arranged close to a feed port of the plasma generator (200); a vacuum pump (502), the vacuum pump (502) being connected to the second end of the vacuum extraction pipeline (501); and A first flow control component is installed on the vacuum pumping pipeline (501).
7. The pyramid velvet preparation system according to claim 1, characterized in that: The air intake portion (600) comprises: An air intake pipe (601), wherein a first end of the air intake pipe (601) is in communication with an inner cavity of the plasma generator (200), and the first end of the air intake pipe (601) is arranged close to a feed port of the plasma generator (200); an air intake source (602), the air intake source (602) being connected to the second end of the air intake pipeline (601); the air intake source (602) being configured as an inert mixed gas; and A second flow control component is installed on the air intake pipe (601).
8. The pyramid velvet preparation system according to claim 1, characterized in that: Also includes: The collecting chamber (700) is connected between the discharge port of the reaction section (300) and the feed port of the texturing section (400).
9. The pyramid velvet preparation system according to claim 1, characterized in that: The reaction unit (300) comprises: A reaction cavity (301), wherein the feed port of the reaction cavity (301) is connected to the discharge port of the plasma generator (200), and the discharge port of the reaction cavity (301) is connected to the feed port of the texturing part (400); at least one cooling gas pipeline (302) connected to the reaction cavity (301); and At least one powder absorber (303) is installed in the reaction chamber (301).
10. The pyramid velvet preparation system according to claim 9, characterized in that: The reaction unit (300) further includes: A filter (304), the filter (304) being located in the reaction cavity (301), and the feed port of the filter (304) being connected to the reaction cavity (301), and the discharge port of the filter (304) being connected to the discharge port of the reaction cavity (301).