Power semiconductor module with temperature sensor

Abstract

The invention relates to a power semiconductor module with a temperature sensor. The power semiconductor module has an electrically and thermally conductive base plate (1), an electrically insulating and thermally conductive substrate (2) arranged on the base plate, at least a metallization (21, 23) placed on the side of the substrate (2) turned away from the base plate (1), at least a semiconductor member (24) electrically connected to the metallization (21, 23) or fixed on the substrate (2) and / or the metallization (21, 23), a housing (4) with the base plate (1) at least partly surrounding the substrate (2) and said at least one semiconductor member (24), and a temperature sensor (5) enclosed partially by housing (4) and the base plate and embedded in a block (7) formed by an electrically insulating and thermally conductive mass, wherein the block (7) is thermo-contacted with at least one semiconductor member (24).

Description

technical field [0001] The invention relates to a power semiconductor module with a temperature sensor. Background technique [0002] Power semiconductor modules are known which have temperature sensors applied to the substrate, the substrate for parts thereof being fixed to the base plate of the power semiconductor module. These substrates have an electrically insulating layer with good thermal conductivity so that there is a thermally conductive contact with the substrate. However, electrical insulation in the space above the substrate in the power semiconductor module, which is usually filled with potting components, is problematic. In this case, the potting composition at least partially embeds the temperature sensor. If damage occurs, electrical breakdown may occur in the potting composition due to the high energy input. The required reliable electrical insulation between the temperature sensor and the high voltage-carrying power electronics is then no longer provide...

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