Integrated Transformer

A technology that integrates transformers and metal layers. It is applied in semiconductor devices, electrical solid state devices, semiconductor/solid state device components, etc., and can solve problems such as consumption and large chip area.
CN105280605BActive Publication Date: 2018-10-26REALTEK SEMICON CORP
3 Cites 0 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
REALTEK SEMICON CORP
Publication Date
2018-10-26

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

An integrated transformer comprises a first inductor and a second inductor, the first inductor comprises B circles of spiral wirings formed by a first metal layer and A circles of wirings formed by a second metal layer, and the A circles of the wirings formed by the second metal layer is overlapped with the innermost A circles of the wirings of the B circles of the spiral wirings formed by the first metal layer; and the second inductor comprises C circles of wirings formed by at least the second metal layer, the C circles of the wirings, formed by the second metal layer, of the second inductor are substantially overlapped with the partial wirings formed by the first metal layer, A is less than B, and A is less than C.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to an integrated transformer, in particular to an asymmetric integrated transformer. Background technique

[0002] Transformers and balanced / unbalanced transformers (balun) are important components used in radio frequency integrated circuits to achieve single-ended to differential signal conversion, signal coupling, impedance matching and other functions. With the development of System on Chip (SoC), integrated transformers (integrated transformer / balun) have gradually replaced traditional discrete components and are widely used in radio frequency integrated circuits. However, passive components in integrated circuits, such as inductors and transformers, often consume a large amount of chip area. Therefore, how to simplify the number of passive components in integrated circuits, minimize the area of ​​passive components, and optimize component characteristics at the same time, such as Quality factor (qualityfactor, Q) and couplin...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More