55results about How to "Good component properties" patented technology

A semiconductor device manufacturing method and a cleaning apparatus for stripping a resist provide a semiconductor device having excellent element characteristics with a sufficient yield in the following manner, after dry etching of a photolithography process, the resist is removed by wet cleaning agent, and sufficiently removes particles or metal impurities without damaging fine patterns. A method for manufacturing a semiconductor device includes forming a resist pattern on a film provided for a semiconductor substrate, forming a fine pattern of a conductive film using the resist pattern as a mask while performing dry etching, supplying a resist stripping solution to The fine pattern formation surface of the semiconductor substrate is processed by a single wafer system to remove the resist pattern, and to perform the rinsing process of the semiconductor substrate.

The invention relates to a Nitride semiconductor wafer,a nitride semiconductor chip, a method of manufacture thereof, and semiconductor device. The nitride semiconductor chip allows enhancement of luminous efficacy. The nitride semiconductor laser chip (nitride semiconductor chip) has a GaN substrate, which has a principal growth plane, and an active layer, which is formed on the principal growth plane of the GaN substrate and which has a quantum well structure including a well layer and a barrier layer. The principal growth plane is a plane having an off angle in the a-axis direction relative to the m plane. The barrier layer is formed of AlGaN, which is a nitride semiconductor containing Al.

A semiconductor device (100) is provided with a gate electrode (12) formed on a substrate (10), a gate insulating layer (20) formed on the gate electrode, an oxide semiconductor layer (18) formed on the gate insulating layer, a source electrode (14) and a drain electrode (16) connected to the oxide semiconductor layer, and an insulating layer (22) formed on the source electrode and the drain electrode. The insulating layer has: a silicon nitride layer (22a) that is connected to at least portions of the tops of the source electrode and the drain electrode, and has thickness of over 0 nm but not more than 30 nm; and a silicon oxide layer (22b) formed on the silicon nitride layer and having a thickness of over 30 nm.

The invention provides a thin film transistor and producing method thereof. The thin film transistor comprises an oxide semiconductor layer, a gate insulating layer, a grid, an oxygen absorption layer, an insulating layer and many conductive electrodes. The oxide semiconductor comprises many low oxygen regions and channel regions between low oxygen regions. The gate indulating layer is located between the oxide semiconductor layer and the grid, and covers the channel region and exposes the low oxygen region. The oxygen absoption layer is located on the low oxygen region with many first openings. The first opening exposes a low oxygen region with a first area. The insulating layer covers the oxygen absorption layer, the oxide semiconductor layer and the gate grid with many second openings. The second opening is located in the first opening for exposing the low oxygen region with a second area. The second area is smaller than the first area. The conductive electrode is located in the second are for contacting the low oxygen region.

A semiconductor device includes a substrate; a first conductive type semiconductor layer disposed on a main surface of the substrate; a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer; a plurality of light emitting elements; and a second conductive side wiring pattern for commonly connecting the second conductive type semiconductor layer in the light emitting elements arranged adjacently. The second conductive type semiconductor layer includes a first conductive type semiconductor connection surface and a second conductive type semiconductor connection surface between the first conductive type semiconductor layer.

For the purpose of providing an insulting layer which enables to improve device characteristics when used in an electronic device, a polymer insulator containing a repeating unit represented by the formula below is contained in the insulating layer. In the formula, R represents a direct bond or an arbitrary linking group; Ar represents an optionally substituted divalent aromatic group; and R represents a hydrogen atom, a fluorine atom or a monovalent organic group.

A method for fabricating a thin film transistor is provided. A gate is formed on a substrate. A gate insulating layer is formed on the substrate to cover the gate. A metal oxide material layer is formed on the gate insulating layer. A photoresist layer is formed on the metal oxide material layer, in which a thickness of the photoresist layer above the gate is larger than that of the photoresist layer above two sides adjacent to the gate. A portion of the metal oxide material layer is removed to form a metal oxide active layer by using the photoresist layer as a mask. The photoresist layer above the two sides adjacent to the gate is removed and the remaining photoresist layer covers a portion of the metal oxide active layer. A source and a drain are formed on the metal oxide active layer covered by the photoresist layer.

The invention provides an optical profile type touch panel, a manufacturing method therefor, and an optical profile type touch display panel. The optical profile type touch panel comprises an infrared light filter layer disposed on an internal surface of a substrate, a first patterning conducting layer comprises grid electrodes and scanning lines which are disposed on the internal surface of the substrate, a first dielectric layer which covers the grid electrodes and the scanning lines, a path layer disposed on the first dielectric layer and located above the grid electrodes, a second patterning conducting layer comprising source electrodes and drain electrodes which are arranged at two sides of the path layer, a transparency electrode disposed on the infrared light filter layer and electrically connected with one of the source electrode and the drain electrode, a second dielectric layer which covers the second patterning conducting layer and part of the transparency electrode, an infrared light sensing layer disposed on the transparency electrode, and a patterning shading conducting layer comprising a sensing electrode disposed on the infrared light sensing layer and a shading electrode disposed on the second dielectric layer and aligned to the path layer. The optical profile type touch panel has an excellent penetration rate and response rate,

An organic electroluminescent (EL) display device includes an organic EL element formed on a substrate. The organic EL element includes a lower electrode, an organic EL layer and an upper electrode that are sequentially stacked on the substrate. A flat panel is attached to the substrate to encapsulate the organic EL element. At least one through hole is formed in the organic EL display device so as to allow gas inside the organic EL display device to flow out during an encapsulation process. A cap is provided to shut the one or more through holes.

An integrated transformer comprises a first inductor and a second inductor, the first inductor comprises B circles of spiral wirings formed by a first metal layer and A circles of wirings formed by a second metal layer, and the A circles of the wirings formed by the second metal layer is overlapped with the innermost A circles of the wirings of the B circles of the spiral wirings formed by the first metal layer; and the second inductor comprises C circles of wirings formed by at least the second metal layer, the C circles of the wirings, formed by the second metal layer, of the second inductor are substantially overlapped with the partial wirings formed by the first metal layer, A is less than B, and A is less than C.

The organic light-emitting compound of the present invention can exhibit excellent device characteristics when applied to organic light-emitting devices due to its excellent hole and electron transport properties, blue luminescence maintenance and luminous efficiency, high color purity, high efficiency and long life.

Disclosed in the invention is an analog switch circuit for a high-frequency signal. The analog switch circuit comprises a metal-oxide-semiconductor field-effect transistor and a control switch. The metal-oxide-semiconductor field-effect transistor consists of a drain electrode, a source electrode, a gate electrode and a polar electrode. A gate bias voltage is applied to the gate electrode to control conduction or disconnection of the metal-oxide-semiconductor field-effect transistor. The control switch consists of a control terminal, a first terminal, a second terminal and a three terminal; and the first terminal is connected to the polar electrode. A control bias voltage related to the gate bias voltage is applied to the control terminal, so that the first terminal is connected to the second terminal when the metal-oxide-semiconductor field-effect transistor is in a conduction state and the first terminal is connected to the third terminal when the metal-oxide-semiconductor field-effect transistor is turned off. The second terminal is connected to a first voltage source providing a first bias voltage; and the third terminal is connected to a second voltage source providing a second bias voltage different from the first bias voltage.

The invention discloses a pixel structure, which includes a first pixel unit, a second pixel unit, a first insulating layer and a common electrode. The first pixel unit is disposed on the substrate and includes a first drain and a first pixel electrode. The second pixel unit is disposed on the substrate and includes a second drain and a second pixel electrode. The first insulating layer covers the first drain and the second drain. The first pixel electrode and the second pixel electrode are disposed on the first insulating layer, and the first insulating layer has a first contact window opening exposing the first drain electrode and a second contact window opening exposing the second drain electrode. The common electrode is arranged on the first insulating layer and is electrically insulated from the first pixel electrode and the second pixel electrode. The common electrode has a common opening. On the vertical projection of the substrate, the opening of the first contact window and the opening of the second contact window both fall within the common opening.