Thin-film transistor array substrate and preparation method thereof

Abstract

The invention provides a substrate for a thin film transistor (TFT) array and a method for manufacturing the same. The substrate for the TFT array comprises the substrate, a plurality of multicrystal silicon islands and a plurality of grid electrodes, wherein the substrate has a display zone, a grid electrode drive zone and a source electrode drive zone; the multicrystal silicon islands are arranged on the substrate, and each multicrystal silicon island has a source electrode zone, a drain electrode zone and a channel zone positioned between the source electrode zone and the drain electrode zone; moreover, the multicrystal silicon islands comprise a plurality of first multicrystal silicon islands and second multicrystal silicon islands, wherein the first multicrystal silicon islands are arranged inside the display zone and the grid electrode drive zone, and have major grain boundaries and minor grain boundaries, and the major grain boundaries is only positioned inside the source electrode zone and / or the drain electrode zone; the second multicrystal silicon islands are arranged inside the source electrode drive zone; the size of grain inside the first multicrystal silicon islands is different from that inside the second multicrystal silicon islands; and the grid electrodes are arranged on the substrate and are corresponding to the channel zone.

Description

technical field [0001] The present invention relates to a semiconductor element array substrate and a manufacturing method of the semiconductor element array substrate, and in particular to a thin film transistor array substrate and a manufacturing method of the thin film transistor array substrate. Background technique [0002] In recent years, with the increasing maturity of optoelectronic technology and semiconductor manufacturing technology, flat-panel displays have flourished. Among them, liquid crystal displays have gradually replaced traditional cathodes based on their advantages of low-voltage operation, no radiation scattering, light weight, and small size. Ray tube displays have become the mainstream of display products in recent years. [0003] In general, liquid crystal displays can be classified into two types: amorphous silicon thin film transistor liquid crystal displays and low temperature poly-silicon thin film transistor liquid crystal displays. Compared w...

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Problems solved by technology

[0006] However, in the above-mentioned TDX laser crystallization technology, since the laser beam is irradiated on the amorphous silicon layer on the substrate, and the substrate is moved for scanning operation in the TDX laser crystallization method, the substrate can only be moved no more than two times each time the substrate is moved. 1 / 1 of the laser irradiated area of ​​the substrate

Therefore, when scanning in one direction by the TDX laser crystallization method, not only more laser shots are required, but also the total number of times to move the substrate is increased. In this way, although high-quality polysilicon can be obtained Membrane, but due to the increase of process time, it is not conducive to the improvement of production capacity

In addition, a single scanning pitch is used on the moving substrate or mask. Although the polysilicon in different regions on the substrate is the same, more laser shots are required, and the total number of times to move the substrate or mask is also less. In this way, although the polysilicon film with uniform quality can be obtained, that is, the main grain boundaries of polysilicon at all positions on the substrate are uniformly distributed, but the increase in process time on the substrate is not conducive to the improvement of production capacity.

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