Array substrate and method for manufacturing polycrystalline silicon layer
A technology for array substrates and polysilicon layers, which is applied in transistors, semiconductor/solid-state device manufacturing, electrical components, etc., and can solve problems such as damaging flexible substrates, component degradation, and affecting the characteristics of display components
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[0037] Figure 1A to Figure 1E is a schematic cross-sectional flow diagram of a method for fabricating a polysilicon layer according to an embodiment of the present invention. Please refer to Figure 1A Firstly, the first buffer layer 120 is formed on the flexible substrate 110 . In this embodiment, the flexible substrate 110 is, for example, a polyimide substrate, a glass substrate, a metal substrate or other substrates. The thickness of the flexible substrate 110 is, for example, greater than 0.01 mm. In one embodiment, the glass transition temperature of the flexible substrate 110 is, for example, less than 400°C. The material of the first buffer layer 120 is, for example, a dielectric material including silicon nitride, silicon oxide, or silicon oxynitride, and its thickness is, for example, 50 nm. A method for forming the first buffer layer 120 is, for example, plasma-assisted chemical vapor deposition.
[0038] Please refer to Figure 1B , and then, a first barrier ...
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