Semiconductor element and manufacturing method thereof

Abstract

The present invention discloses a semiconductor element and a manufacturing method thereof. The manufacturing method comprises the steps of: forming a grid electrode on a substrate; forming a source electrode and a drain electrode above or below the grid electrode; forming a first insulating layer for covering the source electrode and the drain electrode; forming a semiconductor layer between the source electrode and the drain electrode; patterning the first insulating layer for at least covering the drain electrode; forming a second insulating layer on the patterned first insulating layer; etching the second insulating layer to form a second opening which exposes the patterned first insulating layer and is arranged above the drain electrode, wherein, an etching selection ratio, i.e., the second insulating layer / the patterned first insulating layer, is greater than 1; performing wet etching for the patterned first insulating layer via the second opening, so as to form a first opening which is communicated with the second opening and exposes the drain electrode; and forming a pixel electrode which is electrically connected with the drain electrode via the first opening and the second opening.

Description

technical field [0001] The present invention relates to an element and its manufacturing method, and in particular to a semiconductor element and its manufacturing method. Background technique [0002] Due to the advantages and characteristics of organic thin-film transistor (OTFT), such as thinness, flexibility, and low manufacturing process temperature, it has been widely used in liquid crystal displays, organic light-emitting displays, electrophoretic displays and other devices. . [0003] In organic thin film transistor manufacturing technology, in order to take into account good charge injection capability and cost considerations, the source and drain are usually made of silver, and the exposed source and drain are formed in the protective layer covering the source and drain. contact window. However, the current etching gas used to form the contact window usually contains components such as oxygen, sulfur, fluorine or chlorine that may oxidize silver, resulting in the...

AI Technical Summary

Problems solved by technology

However, the current etching gas used to form the contact window usually contains components such as oxygen, sulfur, fluorine or chlorine that may oxidize silver, resulting in the characteristics of the source and drain being affected

Images