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Thin film transistor and producing method

A technology of thin film transistor and manufacturing method, which is applied in the direction of transistor, semiconductor/solid-state device manufacturing, semiconductor device, etc., can solve the problems of component failure and leakage current, etc.

Inactive Publication Date: 2014-01-29
AU OPTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the conductive electrodes in the current technology are in contact with the aluminum oxide or incompletely reacted aluminum on the side through the contact window, it is easy to cause a problem of high leakage current, which in turn leads to component failure.

Method used

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  • Thin film transistor and producing method
  • Thin film transistor and producing method
  • Thin film transistor and producing method

Examples

Experimental program
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Embodiment Construction

[0039] figure 1 is a schematic cross-sectional view of a thin film transistor 100 according to the first embodiment of the present invention, and figure 2 yes figure 1 A schematic top view of area A in , wherein the area A is the area of ​​one of the first openings.

[0040] The thin film transistor 100 is disposed on a substrate 110 . The material of the substrate 110 is, for example, glass, quartz, organic polymer or metal. Furthermore, in this embodiment, the buffer layer 120 is disposed between the thin film transistor 100 and the substrate 110 , that is, the buffer layer 120 may be disposed on the substrate 110 . The material of the buffer layer 120 is, for example, oxide. However, the present invention is not limited thereto. In other embodiments of the present invention, the buffer layer 120 may not be included, as long as the substrate 110 can withstand the photolithography and etching process in the manufacturing method of the thin film transistor 100 .

[0041...

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PUM

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Abstract

The invention provides a thin film transistor and producing method thereof. The thin film transistor comprises an oxide semiconductor layer, a gate insulating layer, a grid, an oxygen absorption layer, an insulating layer and many conductive electrodes. The oxide semiconductor comprises many low oxygen regions and channel regions between low oxygen regions. The gate indulating layer is located between the oxide semiconductor layer and the grid, and covers the channel region and exposes the low oxygen region. The oxygen absoption layer is located on the low oxygen region with many first openings. The first opening exposes a low oxygen region with a first area. The insulating layer covers the oxygen absorption layer, the oxide semiconductor layer and the gate grid with many second openings. The second opening is located in the first opening for exposing the low oxygen region with a second area. The second area is smaller than the first area. The conductive electrode is located in the second are for contacting the low oxygen region.

Description

【Technical field】 [0001] The present invention relates to a semiconductor element and its manufacturing method, and in particular to a thin film transistor and its manufacturing method. 【Background technique】 [0002] With the advancement of modern information technology, displays of various specifications have been widely used in the screens of consumer electronic products, such as mobile phones, notebook computers, digital cameras, and personal digital assistants (Personal Digital Assistant, PDA), etc. . Among the multiple displays, Liquid Crystal Display (LCD) and Organic Electro-luminescent Display (OELD or OLED) have the advantages of thinness and low power consumption, so they are the most popular in the market. Mainstream merchandise. The manufacturing process of the LCD and the OLED includes arranging an array of semiconductor elements on a substrate, and the semiconductor elements include thin film transistors (Thin Film Transistor, TFT). [0003] As the resoluti...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786H01L29/06H01L21/336
CPCH01L29/0869H01L29/0886H01L29/66742H01L29/7869H01L29/66969
Inventor 张志榜
Owner AU OPTRONICS CORP
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