Thin film transistor and producing method

A technology of thin film transistor and manufacturing method, which is applied in the direction of transistor, semiconductor/solid-state device manufacturing, semiconductor device, etc., can solve the problems of component failure and leakage current, etc.
CN103545380AInactive Publication Date: 2014-01-29AU OPTRONICS CORP

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
AU OPTRONICS CORP
Publication Date
2014-01-29
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention provides a thin film transistor and producing method thereof. The thin film transistor comprises an oxide semiconductor layer, a gate insulating layer, a grid, an oxygen absorption layer, an insulating layer and many conductive electrodes. The oxide semiconductor comprises many low oxygen regions and channel regions between low oxygen regions. The gate indulating layer is located between the oxide semiconductor layer and the grid, and covers the channel region and exposes the low oxygen region. The oxygen absoption layer is located on the low oxygen region with many first openings. The first opening exposes a low oxygen region with a first area. The insulating layer covers the oxygen absorption layer, the oxide semiconductor layer and the gate grid with many second openings. The second opening is located in the first opening for exposing the low oxygen region with a second area. The second area is smaller than the first area. The conductive electrode is located in the second are for contacting the low oxygen region.
Need to check novelty before this filing date? Find Prior Art

Description

【Technical field】

[0001] The present invention relates to a semiconductor element and its manufacturing method, and in particular to a thin film transistor and its manufacturing method. 【Background technique】

[0002] With the advancement of modern information technology, displays of various specifications have been widely used in the screens of consumer electronic products, such as mobile phones, notebook computers, digital cameras, and personal digital assistants (Personal Digital Assistant, PDA), etc. . Among the multiple displays, Liquid Crystal Display (LCD) and Organic Electro-luminescent Display (OELD or OLED) have the advantages of thinness and low power consumption, so they are the most popular in the market. Mainstream merchandise. The manufacturing process of the LCD and the OLED includes arranging an array of semiconductor elements on a substrate, and the semiconductor elements include thin film transistors (Thin Film Transistor, TFT).

[0003] As the resoluti...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More