Thin film transistor and production method thereof

Abstract

The invention discloses a production method of a thin film transistor, which comprises the following steps of: providing a base plate firstly; forming a sacrificial layer on the base plate; forming a multicrystal silicon pattern layer on the base plate to surround the sacrificial layer; and then forming a gate insulation layer large enough to cover the multicrystal silicon pattern layer at least. Additionally, a gate pattern is formed on the gate insulation layer above the multicrystal silicon pattern layer and a source electrode region, a drain electrode region and an active region are formed on the multicrystal silicon pattern layer and the active region is positioned between the source electrode region and the drain electrode region. Furthermore, a protection layer is formed to cover the gate pattern and partial gate insulation layer. And then a source electrode conducting layer and a drain electrode conducting layer are formed on the protection layer and electrically connected with the source electrode region and the drain electrode region of the multicrystal silicon pattern layer respectively.

Description

technical field [0001] The present invention relates to a thin film transistor and its manufacturing method, and in particular to a polysilicon thin film transistor and its manufacturing method. Background technique [0002] In existing low-temperature polysilicon thin film transistors, grain boundary defects in the channel are the main factor for deteriorating device characteristics. Since the size of the channel is reduced to nanoscale, the problem of grain boundary defects in the channel can be effectively improved. Therefore, how to fabricate a nanowire channel (NW channel) has become a major research direction. [0003] The existing nanoscale channel fabrication method mainly utilizes electron beam lithography (electron beamlithography) technology to pattern polysilicon material to form a nanoscale width channel. However, the cost of e-beam lithography is quite high and cannot effectively increase production capacity. Therefore, the technique of fabricating nanoscale...

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Problems solved by technology

It should be noted that since the height of the nanoscale channel 118 mainly depends on the height of the gate 114, the size of the gate 114 is limited and cannot be reduced arbitrarily.

Therefore, the size of the nanoscale channel 118 is directly limited by the size of the gate 114

In addition, since only one side of the nanoscale channel 118 is opposite to the gate 114, the control ability of the gate 114 for the nanoscale channel 118 cannot be effectively improved.

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