Insulating layer, electronic device, field effect transistor, and polyvinylthiophenol

一种聚乙烯基苯硫酚、场效应晶体管的技术,应用在晶体管、电气元件、电固体器件等方向,能够解决未表现出元件特性等问题,达到改善迁移度、改善元件特性的效果
CN101501080AActive Publication Date: 2009-08-05MITSUBISHI RAYON CO LTD

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
MITSUBISHI RAYON CO LTD
Publication Date
2009-08-05

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Abstract

For the purpose of providing an insulting layer which enables to improve device characteristics when used in an electronic device, a polymer insulator containing a repeating unit represented by the formula below is contained in the insulating layer. In the formula, R represents a direct bond or an arbitrary linking group; Ar represents an optionally substituted divalent aromatic group; and R represents a hydrogen atom, a fluorine atom or a monovalent organic group.
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Description

technical field

[0001] The present invention relates to an insulating layer, an electronic component having the insulating layer, a field effect transistor, and polyvinylthiophenol. Specifically, the present invention relates to an insulating layer capable of improving electrical performance, an electronic component and a field effect transistor having the insulating layer. Effect transistors, and polyvinylthiophenol that can be used for the insulating layer. Background technique

[0002] As an organic insulating layer expected to be used as a constituent member of an organic thin film transistor or the like, for example, polyimide, benzocyclobutene, photoacryl or the like are used. However, the actual situation is that the organic insulating layer has not yet exhibited device characteristics to the extent that it can replace the inorganic insulating layer (see Patent Document 1). Therefore, in order to realize organic electronic devices such as organic thin film transistor...

Claims

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