Method for manufacturing solar battery

Abstract

The invention discloses a method for manufacturing a solar battery, including following steps of: firstly providing a substrate and forming a substrate electrode on the substrate; forming a CIGS crystallizing layer on the substrate electrode; processing a chemo mechanical grinding technology on the surface of the CIGS crystallizing layer so as to flatten the CIGS crystallizing layer; forming a buffer layer on the flattened CIGS crystallizing layer surface; and forming a transparent conductive layer on the buffer layer. Therefore, the method for manufacturing the solar battery facilitates volume production and the manufactured solar battery has the good element performance.

Description

technical field [0001] The invention relates to a method for manufacturing a solar cell, and in particular to a method for manufacturing a copper indium gallium selenide (CIGS) type solar cell. Background technique [0002] Solar energy is a clean, non-polluting and inexhaustible source of energy. It has always been the focus of attention when solving the current problems of pollution and shortage of petrochemical energy. Among many solar photovoltaic technologies, compared with silicon solar cells, Copper Indium Gallium Diselenide (CIGS) solar cells only need a very small part of silicon raw materials, and the conversion efficiency can reach 20%. The energy consumed in the production process is half that of traditional silicon-based solar cells. Therefore, copper indium gallium diselenide (CIGS) solar cells have the advantages of high photoelectric conversion efficiency and low cost, and are valued by the market. [0003] In conventional CIGS solar cells, vacuum process te...

AI Technical Summary

Problems solved by technology

Please refer to figure 1 , the copper indium gallium selenide layer 110 in the CIGS solar cell 100 is made, for example, by a vacuum process of selenization, such as figure 1 As shown, the surface of the crystallized CIGS layer 110 is rough, so that the buffer layer 120 fabricated on it cannot be successfully formed into a film

[0004] In order to prevent the buffer layer from being successfully formed on the surface of the CIGS layer 110, the buffer layer 120 must be fabricated by chemical bath deposition.

However, the chemical bath deposition method is a wet process, which is not conducive to mass production

In addition, due to the low energy gap of the surface of the conventional CIGS layer 110, the open circuit voltage (Voc) of the conventional CIGS solar cell 100 is low.

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