A kind of thin film transistor, its manufacturing method and corresponding device

Abstract

The invention relates to a thin film transistor, its manufacturing method and a corresponding device, which are used to solve the problem in the prior art that the long channel length limits the application of high-resolution display panels. The thin film transistor comprises: an active layer with a conductive doped region at one end; a source electrode and a drain electrode respectively arranged below and above one end of the active layer away from the doped region; The first gate and the second gate are above and insulated from the active layer. The thin film transistor in the embodiment of the present invention includes two gates respectively distributed on the upper and lower sides of the active layer. Since the channel is only formed on the surface of the active layer, the active layer can be formed on the upper and lower sides during operation. Two-layer channels, and connect the upper and lower channels through the conductive doped region at one end of the active layer. The channel length is the sum of the channel lengths on the upper and lower surfaces. When the channel length requirements are the same as those of the existing structure It saves the occupied area.

Description

technical field [0001] The invention relates to the technical field of displays, in particular to a thin film transistor, a manufacturing method thereof and a corresponding device. Background technique [0002] At present, compared with amorphous silicon array substrates, low-temperature polysilicon array substrates have the advantages of high mobility (up to hundreds of times the mobility of amorphous silicon array substrates), the size of its thin film transistors can be made small, and the response speed Fast, is an array substrate for display panels that has become more and more popular in recent years, and is increasingly used in high-resolution, high-quality organic electroluminescent displays and liquid crystal display panels. However, its composition is generally complex and the process is numerous. Especially in high-resolution display panels, multiple small-sized thin-film transistors are required, and the requirements for process realization, electrical performanc...

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