Thin film transistor, manufacturing method thereof and corresponding device
A technology of thin-film transistors and display devices, which is applied in the direction of transistors, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve problems such as limiting the application of high-resolution display panels, and achieve the effect of saving the occupied area
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[0038] The thin film transistor provided by the embodiment of the present invention includes: an active layer provided with a conductive doped region at one end; a source and a drain respectively provided below and above the end of the active layer away from the doped region; A first gate and a second gate below and above the source layer and insulated from the active layer. The thin film transistor in the embodiment of the present invention includes two gates respectively distributed on the upper and lower sides of the active layer. Since the channel is formed only on the surface of the active layer, the active layer can be formed on the upper and lower sides during operation. Two layers of channels, and the upper and lower channels are connected through the conductive doped region at one end of the active layer, which occupies a smaller substrate area than the existing structure under the same channel length requirement, which is beneficial to adapt to high resolution The des...
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