The wiring structure of the bending area of ​​the flexible oled display panel, the flexible oled display panel

A display panel and line structure technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve problems such as corrosion, affecting device characteristics, affecting the stability of SD connection of the wiring exchange layer

Active Publication Date: 2020-09-18
WUHAN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this way, the sum of the thickness of the bump B1 and the thickness of the wiring replacement layer SD is 1.7 μm, while the thickness of the flat layer PLN is 1.5 μm, which will cause the wiring replacement layer SD of the bump B1 to exceed the flat layer PLN, When the cathode etching (Anode Etch) is performed later, the wiring replacement layer SD beyond the flat layer PLN will be etched away, thereby affecting the stability of the connection between the wiring replacement layer SD and the first wiring GE1 and the second wiring GE2 properties, which in turn affect device characteristics

Method used

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  • The wiring structure of the bending area of ​​the flexible oled display panel, the flexible oled display panel
  • The wiring structure of the bending area of ​​the flexible oled display panel, the flexible oled display panel
  • The wiring structure of the bending area of ​​the flexible oled display panel, the flexible oled display panel

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Embodiment Construction

[0027] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the specific embodiments set forth herein. Rather, the embodiments are provided to explain the principles of the invention and its practical application, thereby enabling others skilled in the art to understand the invention for various embodiments and with various modifications as are suited to particular intended uses.

[0028] In the drawings, the thicknesses of layers and regions are exaggerated for clarity. Like reference numerals refer to like components throughout the specification and drawings.

[0029] It will be understood that, although the terms "first", "second", etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from anot...

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Abstract

The present invention provides a wiring structure in the bending area of ​​a flexible OLED display panel, the wiring structure includes a plurality of first conductive strips, an insulating layer and a plurality of second conductive strips, and the plurality of first conductive strips are separated by Arranged, the insulating layer is arranged on a plurality of first conductive strips and arranged in the intervals between the first conductive strips, the plurality of second conductive strips are arranged on the insulating layer at intervals, the plurality of A second conductive strip penetrates through the insulating layer and is connected to the plurality of first conductive strips. In the bending area of ​​the flexible OLED display panel of the present invention, the existing wiring replacement layer is omitted, and the wiring structure in the bending area still has the characteristics of effectively releasing stress during bending, so that there will be no bending and breaking line risk.

Description

technical field [0001] The invention belongs to the technical field of flexible display, and in particular relates to a wiring structure of a bending area of ​​a flexible OLED display panel and a flexible OLED display panel. Background technique [0002] At present, the design of the wiring in the bending area (Bending Area) BA of the flexible OLED display panel still uses the first wiring (which is made of the same material as the gate of the transistor) GE1 and the second wiring (which is connected to the storage capacitor The first capacitance electrode of the transistor is made of the same material at the same time) GE2 is changed to the line change layer (which is made of the same material as the source and drain of the transistor) SD, which can avoid the first wiring GE1 and the second The second routing GE2 is broken due to the large stress. The specific structure is as follows: figure 1 shown. exist figure 1 Among them, the first trace GE1, the second trace GE2 an...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): H01L27/32H01L51/52
CPCH10K59/131H10K50/84
Inventor陈彩琴刘丹
OwnerWUHAN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD