Pixel structure, manufacturing method thereof and thin-film transistor
A technology of pixel structure and channel layer, applied in the direction of transistors, electric solid devices, semiconductor devices, etc., can solve the problems of the effect of liquid crystal display picture quality, the effect of pixel structure performance, and the uneven brightness of liquid crystal display screen.
Inactive Publication Date: 2018-09-28
AU OPTRONICS CORP
View PDF3 Cites 2 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0004] However, in the thin film transistor structure, due to the problem of parasitic capacitance generated therein, the performance of the pixel structure may be affected by the parasitic capacitance
Furthermore, when there is parasitic capacitance in the thin film transistor structure, the picture quality of the liquid crystal display may be affected. For example, the parasitic capacitance may cause the problem of uneven brightness and darkness of the liquid crystal display picture
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0063] A number of embodiments of the present invention will be disclosed in the following figures. For the sake of clarity, many practical details will be described together in the following description. It should be understood, however, that these various practical details should not be used to limit the invention. That is, in some embodiments of the present invention, these practical details are unnecessary. In addition, for the sake of simplifying the drawings, some known and commonly used structures and components will be shown in a simple and schematic manner in the drawings.
[0064] In view of the fact that the parasitic capacitance may cause the problem of uneven brightness and darkness of the liquid crystal display screen. In view of this, in the pixel structure of the present invention, the parasitic capacitance generated between one of the source and the drain and the gate can be reduced by setting the second insulating layer, so as to reduce the feed-through volt...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
Login to View More
Abstract
A pixel structure comprises a substrate, a gate, a channel layer, a first insulating layer, a source, a drain and a second insulating layer. The gate is disposed on the substrate. The first insulatinglayer is disposed between the gate and the channel layer. The source is electrically connected to the channel layer. The drain is electrically connected to the channel layer. The second insulating layer is disposed between the gate and one of the source and the grain vertical projections of which are in the channel layer, wherein the vertical distance between the gate and one of the source and the grain vertical projections of which are in the channel layer is a first distance, the vertical distance between the gate and the other of the source and the grain vertical projections of which are in the channel layer is a second distance, the first distance at least comprises the thickness of the second insulating layer and the first distance is larger than the second distance.
Description
[0001] This application is a divisional application of the Chinese application number 201610081525.1, the filing date is February 5, 2016, and the title is "Pixel Structure, Its Fabrication Method and Thin Film Transistor". 【Technical field】 [0002] The invention relates to a pixel structure, a manufacturing method thereof and a thin film transistor. 【Background technique】 [0003] Among all kinds of electronic products in household appliances. Among them, a liquid crystal display using a thin film transistor (thin film transistor; TFT) has been widely used. A thin-film transistor liquid crystal display is mainly composed of a thin-film transistor array substrate, a color filter array substrate and a liquid crystal layer, wherein a plurality of thin-film transistors arranged in an array are arranged on the thin-film transistor array substrate, and each thin-film transistor The pixel electrodes are arranged correspondingly to form a pixel structure. For the provided thin f...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & AuthorityApplications(China)
IPC IPC(8): H01L29/786H01L27/12H01L21/336G02F1/1362
CPCG02F1/136213G02F1/136227H01L27/1214H01L29/66742H01L29/78606
Inventor江晏彰丘兆仟
OwnerAU OPTRONICS CORP