A polysilicon deposition method, flash memory and manufacturing method thereof

A technology of deposition method and manufacturing method, which is applied in the direction of transistor, semiconductor/solid-state device manufacturing, semiconductor device, etc., and can solve problems such as voids, low yield, and electrical changes in flash memory

Active Publication Date: 2021-03-23
WUHAN XINXIN SEMICON MFG CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of this, the present invention provides a polysilicon deposition method, a flash memory and a manufacturing method thereof, so as to solve the problems in the prior art that voids are generated in polysilicon, causing flash memory electrical changes and low yields

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  • A polysilicon deposition method, flash memory and manufacturing method thereof
  • A polysilicon deposition method, flash memory and manufacturing method thereof
  • A polysilicon deposition method, flash memory and manufacturing method thereof

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Embodiment Construction

[0041] As described in the context of the contempton, the polysilicon in the prior art is prone to voids, thereby affecting the electrical and yield of flash memory.

[0042] The inventors have found that the above phenomenon is that when the floating grating in which the flash memory is formed, the grooves on the substrate are smaller, and the bottom larger grooves, such as figure 1 Distance figure 1 For a substrate structure, since the shape is defined in the groove 011 on the substrate 01, when the polysilicon deposition is performed in the recess 011, the inside of the groove is still not filled, and the polysilicon 02 is still filled, and the polycrystalline silicon on the groove has been Sealing, thus forming a gap 012 in the groove 011, see figure 2 , figure 2 A schematic structural diagram of flash semi-finished product after polysilicon deposition; although it is continued to be annealed, the gap 012 will be repaired, and the void 012 is reduced, please see image 3 ,...

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Abstract

The invention provides a polycrystalline silicon deposition method, and a flash memory and a manufacturing method thereof. The polycrystalline silicon deposition method comprises the steps that polycrystalline silicon is deposited on a substrate of a first groove for one time, wherein the bottom dimension of the first groove is relatively larger than the opening size, and a gap is generated afterthe one-time deposition; then etching is carried out, and the gap position is etched to form a second groove, wherein the opening of the second groove is relatively larger than the bottom; and next, deposition is carried out again, so that the gap is filled. In the embodiments of the invention, multiple times of polycrystalline silicon deposition can be carried out until no gap exists in the firstgroove, namely, the gap is completely filled with the polycrystalline silicon, so that the electric performance and the yield of the flash memory are improved.

Description

Technical field [0001] The present invention relates to the field of production techniques of semiconductor devices, and more particularly to a polysilicon deposition method, flash memory and a method of fabricating. Background technique [0002] In the flash production process, the selection of the gate has a mainstream is a floating gate; a floating gate typically uses a series of processes such as non-doped polycrystalline silicon. Get the demanded floating gate structure and performance. [0003] However, polysilicon produces a void after depositing, ion implantation, annealing, and CMP, and voids in polysilicon can affect electrical properties and reduce yields. Inventive content [0004] In view of this, the present invention provides a polysilicon deposition method, a flash memory, and its fabrication method to solve the problem of generating voids in the prior art, causing a low flash electrical change and low yield. [0005] In order to achieve the above object, the pre...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): H01L21/28H01L21/285H01L21/336H01L29/788
CPCH01L21/28525H01L29/66825H01L29/7883H01L29/40114
Inventor雷奇奇
OwnerWUHAN XINXIN SEMICON MFG CO LTD