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Leakage detection circuit, flash memory leakage detection device and leakage detection method

A technology for flash memory and leakage detection, which is applied in the direction of measuring devices, instruments, and measuring electricity, can solve the problems of inability to detect leakage and the small size of flash memory chips, and achieve the effect of simple and efficient leakage detection

Active Publication Date: 2022-08-09
GIGADEVICE SEMICON (BEIJING) INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Since the size of the flash memory chip is getting smaller and smaller, the distance between the corresponding word line and the word line and between the word line and the substrate is also smaller. accurate detection of leakage current between

Method used

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  • Leakage detection circuit, flash memory leakage detection device and leakage detection method
  • Leakage detection circuit, flash memory leakage detection device and leakage detection method
  • Leakage detection circuit, flash memory leakage detection device and leakage detection method

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Embodiment

[0039] figure 1 A schematic structural diagram of a leakage detection circuit provided by an embodiment of the present invention, refer to figure 1 , the leakage detection circuit includes: a first current mirror unit 101, a second current mirror unit 102, a reference current generation unit 103, a third current mirror unit 104 and a comparison unit 105;

[0040] The input terminal of the first current mirror unit 101 is used as the input terminal IN of the leakage detection circuit, the output terminal of the first current mirror unit 101 is electrically connected to the input terminal of the second current mirror unit 102, and the voltage terminal VPEO of the first current mirror unit 101 is for input bias voltage;

[0041] The output terminal of the second current mirror unit 102 is electrically connected to the input terminal of the third current mirror unit 104, and the voltage terminal VCC1 of the second current mirror unit 102 is used for inputting a bias voltage;

[...

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PUM

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Abstract

The invention discloses a leakage detection circuit, a flash memory leakage detection device and a leakage detection method. The leakage detection circuit comprises: a first current mirror unit, a second current mirror unit, a reference current generation unit, a third current mirror unit and a comparison unit The input end of the first current mirror unit is used as the input end of the leakage detection circuit, the output end of the first current mirror unit is electrically connected with the input end of the second current mirror unit; the output end of the second current mirror unit is connected with the third current mirror unit The input terminal of the unit is electrically connected; the input terminal of the reference current generating unit is electrically connected to the first power supply, the output terminal of the reference current generating unit is electrically connected to the input terminal of the third current mirror unit; the output terminal of the third current mirror unit is electrically connected to the comparison The first input end of the unit is electrically connected; the second input end of the comparison unit is used for inputting a reference signal, and the output end of the comparison unit is used as the output end of the leakage detection circuit. The leakage detection of the circuit to be detected is realized conveniently and efficiently.

Description

technical field [0001] Embodiments of the present invention relate to leakage detection technology, and in particular, to a leakage detection circuit, a flash memory leakage detection device, and a leakage detection method. Background technique [0002] With the rapid development of semiconductor and other technologies, it plays a very important role in the detection of leakage current in some precision equipment, such as flash memory. Through leakage detection, bad blocks in flash memory can be marked in time to prevent data from being written to bad blocks. [0003] As the size of flash memory chips is getting smaller and smaller, the corresponding distances between word lines and word lines and between word lines and substrates are also smaller. The leakage current between them can be accurately detected. SUMMARY OF THE INVENTION [0004] The invention provides a leakage detection circuit, a flash memory leakage detection device and a leakage detection method, so as to...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/52G01R31/56
Inventor 邓龙利刘铭
Owner GIGADEVICE SEMICON (BEIJING) INC
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