Electric leakage detection circuit, flash memory electric leakage detection device and electric leakage detection method

A flash memory, leakage detection technology, applied in measuring devices, instruments, measuring electricity, etc., can solve the problems of inability to detect leakage, small size of flash memory chips, etc., to achieve the effect of leakage detection, simple and efficient leakage detection

Active Publication Date: 2020-07-21
GIGADEVICE SEMICON (BEIJING) INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Since the size of the flash memory chip is getting smaller and smaller, the distance between the corresponding word line and the word line and between the word line and the substrate is also smaller. accurate detection of leakage current between

Method used

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  • Electric leakage detection circuit, flash memory electric leakage detection device and electric leakage detection method
  • Electric leakage detection circuit, flash memory electric leakage detection device and electric leakage detection method
  • Electric leakage detection circuit, flash memory electric leakage detection device and electric leakage detection method

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Embodiment

[0039] figure 1 A schematic structural diagram of a leakage detection circuit provided for an embodiment of the present invention, refer to figure 1 , The leakage detection circuit includes: a first current mirror unit 101, a second current mirror unit 102, a reference current generation unit 103, a third current mirror unit 104 and a comparison unit 105;

[0040] The input terminal of the first current mirror unit 101 is used as the input terminal IN of the leakage detection circuit, the output terminal of the first current mirror unit 101 is electrically connected with the input terminal of the second current mirror unit 102, and the voltage terminal VPEO of the first current mirror unit 101 for input bias voltage;

[0041] The output terminal of the second current mirror unit 102 is electrically connected to the input terminal of the third current mirror unit 104, and the voltage terminal VCC1 of the second current mirror unit 102 is used for inputting a bias voltage;

[...

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PUM

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Abstract

The invention discloses an electric leakage detection circuit, a flash memory electric leakage detection device and an electric leakage detection method. The electric leakage detection circuit comprises a first current mirror unit, a second current mirror unit, a reference current generation unit, a third current mirror unit and a comparison unit. The input end of the first current mirror unit serves as the input end of the electric leakage detection circuit, and the output end of the first current mirror unit is electrically connected with the input end of the second current mirror unit. Theoutput end of the second current mirror unit is electrically connected with the input end of the third current mirror unit. The input end of the reference current generation unit is electrically connected with a first power supply, and the output end of the reference current generation unit is electrically connected with the input end of the third current mirror unit. The output end of the third current mirror unit is electrically connected with a first input end of the comparison unit. A second input end of the comparison unit is used for inputting a reference signal, and the output end of the comparison unit serves as the output end of the electric leakage detection circuit. Electric leakage detection of a to-be-detected circuit is realized conveniently and efficiently.

Description

technical field [0001] Embodiments of the present invention relate to leakage detection technology, and in particular to a leakage detection circuit, a leakage detection device for a flash memory memory, and a leakage detection method. Background technique [0002] With the rapid development of semiconductor and other technologies, it plays a very important role in some precision equipment, such as leakage current detection in flash memory. Through leakage detection, bad blocks in flash memory can be marked in time to prevent data from being written into bad blocks. [0003] Since the size of the flash memory chip is getting smaller and smaller, the distance between the corresponding word line and the word line and between the word line and the substrate is also smaller. Accurate detection of electric leakage between them. Contents of the invention [0004] The invention provides a leakage detection circuit, a flash memory leakage detection device and a leakage detection ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/52G01R31/56
Inventor 邓龙利刘铭
Owner GIGADEVICE SEMICON (BEIJING) INC
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