Circuit structure and control method thereof

A technology of circuit structure and control method, applied in electronic switches, electrical components, pulse technology, etc., can solve the problems of limiting the performance of stacked memory devices and difficult bidirectional data transmission, and achieve the effect of improving performance and ensuring data transmission performance.

Pending Publication Date: 2022-04-29
CHANGXIN MEMORY TECH INC
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] It is difficult to bidirectionally transmit data through silicon vias between semiconductor chips that are electrically connected through silicon vias, which limits the performance of stacked memory devices.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Circuit structure and control method thereof
  • Circuit structure and control method thereof
  • Circuit structure and control method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0075] In order to make the purpose, technical solutions and advantages of the embodiments of the present disclosure clearer, the technical solutions in the disclosed embodiments will be clearly and completely described below in conjunction with the drawings in the embodiments of the present disclosure. Obviously, the described embodiments It is a part of the embodiments of the present disclosure, but not all of them. Based on the embodiments in the present disclosure, all other embodiments obtained by those skilled in the art without making creative efforts belong to the protection scope of the present disclosure. It should be noted that, in the case of no conflict, the embodiments in the present disclosure and the features in the embodiments can be combined arbitrarily with each other.

[0076] This article mainly uses a stacked semiconductor device as an example to introduce the circuit structure and its control method provided by the embodiments of the present disclosure. ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a circuit structure and a control method thereof. The circuit structure comprises an electric connection module which comprises N electric connection structures, and two ends of each electric connection structure are respectively connected with a first switch unit and a second switch unit; the first circuit module is used for controlling on or off of the first switch unit according to the voltage change of the first side of the electric connection structure; the second circuit module is used for controlling the on or off of the second switch unit according to the voltage change of the second side of the electric connection structure; when the first switch unit and the second switch unit are in the on state at the same time, data are transmitted from the first switch unit to the second switch unit, or data are transmitted from the second switch unit to the first switch unit. Therefore, the electric connection structure can realize two-way transmission of data, and the performance of an electric device adopting the circuit structure, such as a semiconductor device, is improved.

Description

technical field [0001] The present disclosure relates to the technical field of semiconductors, and in particular to a circuit structure and a control method thereof. Background technique [0002] In the circuit structure, the electrical connection between each device unit is realized through an electrical connection structure. For example, in a stacked memory device, the electrical connection between semiconductor chips of each layer is usually realized through a through silicon via (Through Silicon Via, TSV). [0003] It is difficult to bidirectionally transmit data through the through-silicon vias between the semiconductor chips electrically connected through the through-silicon vias, which limits the performance of the stacked memory device. Contents of the invention [0004] The following is an overview of the subject matter described in detail in this disclosure. This summary is not intended to limit the scope of the claims. [0005] The disclosure provides a circu...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H03K17/22G11C5/06
CPCH03K17/223G11C5/06
Inventor 张家瑞
Owner CHANGXIN MEMORY TECH INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap