A composite current collector evaporation aluminum plating process parameter optimization method and system

Abstract

The present invention relates to the field of vacuum coating technology, and specifically to a composite current collector evaporation aluminum coating process parameter optimization method and system, the composite current collector evaporation aluminum coating process parameter optimization method, comprising the following steps: obtaining a first temperature, the first temperature is the temperature of the aluminum film layer during the evaporation process; based on the first temperature, obtaining a first thermal stress, the first thermal stress is the thermal stress value of the aluminum film layer during the evaporation process; obtaining a second temperature, the second temperature is the temperature of the substrate layer during the evaporation process; based on the second temperature, obtaining a second thermal stress, the second thermal stress is the thermal stress value of the substrate layer during the evaporation process; according to the first thermal stress and the second thermal stress, adjusting the output power of the heat source. The present invention calculates the thermal stress value of each film layer respectively through the temperature of the aluminum film layer and the substrate layer, and then dynamically adjusts the output power of the heat source according to the difference in thermal stress values, so that the thermal stress difference between the two film layers is maintained within a controllable range.

Description

Technical Field

[0001] The present invention relates to the field of vacuum coating technology, and in particular to a method and system for optimizing process parameters of composite current collector evaporation aluminum coating. Background Art

[0002] Composite current collector technology is a key technology developed in the lithium battery industry in recent years to improve battery energy density and safety. Traditional current collectors are generally made of copper foil or aluminum foil, but in order to further reduce weight, improve conductivity and thermal stability, composite current collectors introduce composite copper foil or composite aluminum foil, which deposits metal layers (copper or aluminum) on the upper and lower surfaces of a polymer material (such as PET, PP or PI) base film to form a new type of composite foil with a "sandwich" structure.

[0003] However, the existing evaporation aluminum coating process usually uses a constant heat source output power, which cannot respond to the changes in thermal stress between the aluminum film layer and the substrate layer in real time, and thus cannot effectively avoid quality problems caused by stress concentration, such as film warping, peeling and cracking. Especially under complex temperature fluctuation conditions, the difference in thermal stress between the aluminum film layer and the substrate layer is more obvious, and traditional processes are difficult to meet the requirements of refined control. Summary of the invention

[0004] In view of the shortcomings of the prior art and the needs of practical applications, the present invention provides a method and system for optimizing the process parameters of composite current collector evaporation aluminum plating, aiming to solve the quality problem caused by the inability of constant heat source output power to respond in real time to changes in thermal stress between the aluminum film layer and the substrate layer.

[0005] In the first aspect, the composite current collector evaporation aluminum plating process parameter optimization method provided by the present invention includes the following steps: obtaining a first temperature, the first temperature is the temperature of the aluminum film layer during the evaporation process; based on the first temperature, obtaining a first thermal stress, the first thermal stress is the thermal stress value of the aluminum film layer during the evaporation process; obtaining a second temperature, the second temperature is the temperature of the substrate layer during the evaporation process; based on the second temperature, obtaining a second thermal stress, the second thermal stress is the thermal stress value of the substrate layer during the evaporation process; according to the first thermal stress and the second thermal stress, adjusting the output power of the heat source. The present invention monitors the temperature of the aluminum film layer and the substrate layer in real time, and calculates the thermal stress value of the corresponding film layer respectively, so as to dynamically adjust the output power of the heat source, thereby ensuring that the thermal stress difference between the two film layers is kept within a controllable range, thereby effectively avoiding quality problems such as warping, peeling or cracking of the film layer caused by stress mismatch between the film layers, and helping to improve the uniformity and stability of the aluminum film layer.

[0006] Furthermore, the first temperature is obtained, and the first temperature is the temperature of the aluminum film layer during the evaporation process, including the following steps: obtaining two-dimensional temperature distribution data on the aluminum film layer during the evaporation process; dividing the surface of the aluminum film layer into a number of temperature sub-regions according to the spatial resolution of the two-dimensional temperature distribution data, and each temperature sub-region corresponds to a temperature value; and selecting a target sub-region from the several temperature sub-regions according to the size of the temperature value corresponding to the temperature sub-region, and the temperature value corresponding to the target sub-region is the global maximum temperature or the global minimum temperature. The present invention obtains the two-dimensional temperature distribution data on the surface of the aluminum film layer to finely control the temperature measurement of the aluminum film layer during the evaporation process, thereby achieving an accurate assessment of the thermal stress of the aluminum film layer.

[0007] Furthermore, the selection rule of the target sub-region is: if the temperature value corresponding to the target sub-region at the previous sampling moment is the global highest temperature, then the temperature value corresponding to the target sub-region at the next sampling moment is the global lowest temperature; if the temperature value corresponding to the target sub-region at the previous sampling moment is the global lowest temperature, then the temperature value corresponding to the target sub-region at the next sampling moment is the global highest temperature. The present invention captures the extreme thermal stress value as a matching reference to effectively deal with the stress difference caused by temperature fluctuations, ensure stress balance in the process, reduce the risk of local failure, and improve the coating quality and process stability.

[0008] Furthermore, the first thermal stress at any sampling time satisfies the following calculation model: , where i is a positive integer and represents the sampling time sequence number. Indicates the sampling time The first thermal stress of the aluminum film layer is Represents the elastic modulus of the aluminum film material, Indicates the thermal expansion coefficient of the aluminum film material, represents the Poisson's ratio of the aluminum film material, Indicates the sampling time The first temperature of the aluminum film layer is Indicates the sampling time The present invention ensures real-time monitoring and adjustment of the stress difference between film layers during temperature changes by accurately calculating the thermal stress of the aluminum film layer, thereby optimizing stress matching and improving process stability and coating quality.

[0009] Furthermore, the second temperature is obtained, which is the temperature of the substrate layer during the evaporation process, and includes the following steps: dividing the substrate layer into a plurality of temperature sub-units according to the temperature sub-regions on the surface of the aluminum film layer, and the temperature sub-units correspond to the temperature sub-regions one by one; selecting a target sub-unit from the plurality of temperature sub-units according to the temperature value corresponding to the temperature sub-region, and the temperature value of the temperature sub-region corresponding to the target sub-unit is the global maximum temperature or the global minimum temperature; based on the temperature value of the temperature sub-region corresponding to the target sub-unit, the second temperature is obtained according to the thermal conductivity of the substrate layer in the target sub-unit. The present invention divides the substrate layer into temperature sub-units corresponding to the temperature sub-regions of the aluminum film layer, which helps to match the stress of the aluminum film layer and the substrate layer under temperature fluctuations.

[0010] Furthermore, the selection rule of the target subunit is: if the temperature value of the temperature sub-region corresponding to the target subunit at the previous sampling moment is the global highest temperature, then the temperature value corresponding to the temperature sub-region corresponding to the target subunit at the next sampling moment is the global lowest temperature; if the temperature value of the temperature sub-region corresponding to the target subunit at the previous sampling moment is the global lowest temperature, then the temperature value corresponding to the temperature sub-region corresponding to the target subunit at the next sampling moment is the global highest temperature. The present invention captures the extreme thermal stress value as a matching reference to effectively deal with the stress difference caused by temperature fluctuations, ensure stress balance in the process, reduce the risk of local failure, and improve the coating quality and process stability.

[0011] Furthermore, the second temperature satisfies the following calculation model:

[0012] , where i is a positive integer and represents the sampling time sequence number. Indicates the sampling time The second temperature of the substrate layer is Indicates the sampling time The temperature value of the temperature sub-region corresponding to the target sub-unit, represents the thermal conductivity of the substrate material, represents the thermal conductivity depth of the substrate layer in the target subunit, Indicates the density of the substrate layer material, represents the initial temperature of the substrate layer material, Indicates the sampling time The present invention calculates the temperature of the substrate layer by using the thermal conductivity of the substrate layer, which can meet the demand for calculating the thermal stress of the substrate layer.

[0013] Furthermore, the second thermal stress satisfies the following calculation model: , where i is a positive integer and represents the sampling time sequence number. Indicates the sampling time The second thermal stress of the substrate layer is represents the elastic modulus of the substrate material, represents the thermal expansion coefficient of the substrate material, represents the Poisson's ratio of the substrate material, Indicates the sampling time The second temperature of the substrate layer is Indicates the sampling time The present invention ensures real-time monitoring and adjustment of the stress difference between film layers during temperature changes by accurately calculating the thermal stress of the substrate layer, thereby optimizing stress matching and improving process stability and coating quality.

[0014] Further, adjusting the output power of the heat source according to the difference between the first thermal stress and the second thermal stress includes the following steps: obtaining the thermal difference between the first thermal stress and the second thermal stress, and matching the proportional control gain parameter by using the thermal difference; adjusting the output power of the heat source based on the thermal difference and the corresponding proportional control gain parameter, and the output power of the heat source at any sampling time satisfies the following adjustment model: , where i is a positive integer and represents the sampling time sequence number. Indicates the sampling time The power output of the adjusted heat source, Indicates the sampling time The power output of the heat source, represents the first type of proportional control gain parameter, represents the second type of proportional control gain parameter, represents the third type of proportional control gain parameter, Indicates the sampling time The first thermal stress of the aluminum film layer is Indicates the sampling time The second thermal stress of the substrate layer is represents the first thermal stress difference threshold, Represents the second thermal stress difference threshold. Based on the thermal stress difference between the aluminum film layer and the substrate layer, and the proportional control gain parameter matching the thermal stress difference, the present invention realizes the dynamic adjustment of the heat source output power, ensures the real-time balance of thermal stress between the two film layers, and not only helps to reduce film defects caused by stress mismatch, but also helps to improve process accuracy and product quality.

[0015] In the second aspect, the composite current collector evaporation aluminum plating process parameter optimization system provided by the present invention includes an input device, a processor, a memory and an output device, wherein the input device, the processor, the memory and the output device are interconnected, wherein the memory is used to store a computer program, the computer program includes program instructions, and the processor is configured to call the program instructions to execute the composite current collector evaporation aluminum plating process parameter optimization method provided by the first aspect of the present invention. The present invention realizes the automated execution of the composite current collector evaporation aluminum plating process parameter optimization method by introducing an integrated system consisting of an input device, a processor, a memory and an output device, which can effectively optimize the stress matching between the aluminum film layer and the substrate layer, reduce film layer defects, and improve the stability of the production process and product quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 A flow chart of the method for optimizing parameters of the composite current collector evaporation aluminum plating process provided by the present invention;

[0017] Figure 2 Schematic diagram of the composite current collector evaporation aluminum plating process parameter optimization system provided by the present invention. DETAILED DESCRIPTION

[0018] The specific embodiments of the present invention will be described in detail below. It should be noted that the embodiments described herein are only for illustration and are not intended to limit the present invention. In the following description, a large number of specific details are set forth in order to provide a thorough understanding of the present invention. However, it is obvious to those of ordinary skill in the art that these specific details do not need to be adopted to implement the present invention. In other examples, in order to avoid confusing the present invention, known circuits, software or methods are not specifically described.

[0019] In one embodiment, see Figure 1 , Figure 1 This is a flow chart of a method for optimizing parameters of composite current collector evaporation aluminum plating process provided in an embodiment of the present invention.

[0020] like Figure 1 As shown, the composite current collector evaporation aluminum plating process parameter optimization method provided in the embodiment of the present invention comprises the following steps:

[0021] S01. Acquire a first temperature, where the first temperature is the temperature of the aluminum film layer during the evaporation process.

[0022] In this embodiment, the first temperature is the surface temperature of the aluminum film layer formed by aluminum being deposited on the surface of the substrate layer, which changes as the evaporation process proceeds and can reflect the thermal state of the aluminum film layer.

[0023] Furthermore, the first temperature may be the surface temperature of any position or a specific position on the surface of the aluminum film layer, or may be the average surface temperature on the entire surface or a part of the surface of the aluminum film layer.

[0024] In this embodiment, in order to reflect the extreme performance of the aluminum film surface during the evaporation process and ensure the effectiveness of global stress matching, the first temperature obtained in step S01 at any sampling time is the highest temperature or the lowest temperature on the entire aluminum film surface.

[0025] Furthermore, the obtaining of the first temperature in step S01, wherein the first temperature is the temperature of the aluminum film layer during the evaporation process, comprises the following steps:

[0026] S011. Obtain two-dimensional temperature distribution data on the aluminum film layer during the evaporation process.

[0027] Specifically, the two-dimensional temperature distribution data on the aluminum film layer can be generated by an infrared thermal imager.

[0028] S012. Divide the surface of the aluminum film layer into a plurality of temperature sub-regions according to the spatial resolution of the two-dimensional temperature distribution data, and each temperature sub-region corresponds to a temperature value.

[0029] Specifically, according to the spatial resolution of the two-dimensional temperature distribution data, the surface of the aluminum film layer is divided into M×N temperature sub-areas, and can be represented as a two-dimensional matrix of M rows and N columns, where each element corresponds to the temperature value of a specific position in the aluminum film layer.

[0030] In this embodiment, the two-dimensional matrix corresponding to the two-dimensional temperature distribution data is: ,in, represents a two-dimensional matrix, Indicates the temperature value corresponding to the temperature sub-region in row 1 and column 1. Indicates the temperature value corresponding to the temperature sub-region in row 1 and column N. Indicates the temperature value corresponding to the temperature sub-region in the Mth row and the first column. Indicates the temperature value corresponding to the temperature sub-region in the Mth row and the Nth column.

[0031] S013. Select a target sub-region from a plurality of temperature sub-regions according to the temperature values ​​corresponding to the temperature sub-regions, wherein the temperature value corresponding to the target sub-region is the global maximum temperature or the global minimum temperature.

[0032] Generally speaking, the thermal stress caused by temperature fluctuations in the aluminum film layer is more obvious than that in the substrate layer; therefore, in this embodiment, the extreme thermal stress value that may be generated in the aluminum film layer between two temperatures is used as a matching reference to achieve global stress matching, thereby avoiding local failures in the process.

[0033] Furthermore, the selection rule for selecting a target sub-region from a plurality of temperature sub-regions in step S013 is:

[0034] If the temperature value corresponding to the target sub-region at the previous sampling moment is the global highest temperature, then the temperature value corresponding to the target sub-region at the next sampling moment is the global lowest temperature.

[0035] If the temperature value corresponding to the target sub-region at the previous sampling moment is the global lowest temperature, then the temperature value corresponding to the target sub-region at the next sampling moment is the global highest temperature.

[0036] S02. Based on the first temperature, obtain a first thermal stress, where the first thermal stress is a thermal stress value of the aluminum film layer during the evaporation process.

[0037] It can be known that the first thermal stress is the mechanical stress caused by thermal expansion or contraction of the aluminum film layer during temperature change.

[0038] In this embodiment, the first thermal stress at any sampling time satisfies the following calculation model: , where i is a positive integer and represents the sampling time sequence number. Indicates the sampling time The first thermal stress of the aluminum film layer is Represents the elastic modulus of the aluminum film material, Indicates the thermal expansion coefficient of the aluminum film material, represents the Poisson's ratio of the aluminum film material, Indicates the sampling time The first temperature of the aluminum film layer is Indicates the sampling time The first temperature of the aluminum film layer.

[0039] Typically, is room temperature, which is 298 Kelvin.

[0040] Further, based on step S013, it can be known that the temperature value types corresponding to the target sub-regions at two adjacent sampling moments for calculating the first thermal stress in step S02 are different, as follows:

[0041] If the sampling time When the first temperature of the aluminum film layer is the global minimum temperature, the sampling time The first temperature of the aluminum film layer is the global maximum temperature.

[0042] If the sampling time When the first temperature of the aluminum film layer is the global maximum temperature, the sampling time The first temperature of the aluminum film layer is the global minimum temperature.

[0043] S03, obtaining a second temperature, where the second temperature is the temperature of the substrate layer during the evaporation process.

[0044] It can be understood that the second temperature refers to the temperature of the substrate layer (such as the PET layer (polyethylene terephthalate layer), the PP layer (polypropylene layer), and the PI layer (polyimide)) during the evaporation process.

[0045] Furthermore, the second temperature is used to calculate the thermal stress of the substrate layer when heated during the evaporation process, and is compared and controlled with the thermal stress of the aluminum film layer to ensure stress matching between the substrate layer and the coating layer.

[0046] In this embodiment, the step S03 of obtaining the second temperature, where the second temperature is the temperature of the substrate layer during the evaporation process, includes the following steps:

[0047] S031. Divide the substrate layer into a plurality of temperature sub-units according to the temperature sub-regions on the surface of the aluminum film layer, wherein the temperature sub-units correspond to the temperature sub-regions one by one.

[0048] Furthermore, based on the temperature sub-areas divided on the aluminum film layer in steps S011 to S012, step S031 divides the substrate layer into M×N temperature sub-units, and the thermal conductivity depth of each temperature sub-unit is z, which is the thickness of the substrate layer; further, the M×N temperature sub-units can also be expressed as a two-dimensional matrix. Similarly, each element in the two-dimensional matrix corresponds to the surface temperature value of a volume block in the substrate layer.

[0049] S032. Select a target subunit from a plurality of temperature subunits according to the temperature values ​​corresponding to the temperature subunits, wherein the temperature value of the temperature subunit corresponding to the target subunit is the global maximum temperature or the global minimum temperature.

[0050] Similarly, in step S032, a target subunit is selected from a plurality of temperature subunits, and the selection rule is as follows:

[0051] If the temperature value of the temperature sub-region corresponding to the target sub-unit at the previous sampling moment is the global highest temperature, then the temperature value of the temperature sub-region corresponding to the target sub-unit at the next sampling moment is the global lowest temperature.

[0052] If the temperature value of the temperature sub-region corresponding to the target sub-unit at the previous sampling moment is the global lowest temperature, then the temperature value of the temperature sub-region corresponding to the target sub-unit at the next sampling moment is the global highest temperature.

[0053] Further, step S032 selects a temperature subunit with an extreme temperature (highest temperature or lowest temperature) As a target subunit , that is, at any sampling time, the target subunit The following selection model is met: , ;otherwise, , ;in, Indicates the sampling time The target subunit, Indicates the sampling time The target subunit, Indicates the temperature sub-region corresponding to the highest temperature among several temperature sub-regions, Indicates the temperature sub-region corresponding to the lowest temperature among several temperature sub-regions.

[0054] S033. Based on the temperature value of the temperature sub-region corresponding to the target sub-unit and according to the thermal conductivity characteristics of the substrate layer in the target sub-unit, obtain a second temperature.

[0055] Furthermore, the second temperature satisfies the following calculation model: , where i is a positive integer and represents the sampling time sequence number. Indicates the sampling time The second temperature of the substrate layer is Indicates the sampling time The temperature value of the temperature sub-region corresponding to the target sub-unit, represents the thermal conductivity of the substrate material, represents the thermal conductivity depth of the substrate layer in the target subunit, Indicates the density of the substrate layer material, represents the initial temperature of the substrate layer material, Indicates the sampling time The second temperature of the substrate layer.

[0056] S04. Based on the second temperature, obtain a second thermal stress, where the second thermal stress is a thermal stress value of the substrate layer during the evaporation process.

[0057] Similarly, as shown in the first thermal stress calculation model in step S02, the second thermal stress in step S04 satisfies the following calculation model: , where i is a positive integer and represents the sampling time sequence number. Indicates the sampling time The second thermal stress of the substrate layer is represents the elastic modulus of the substrate material, represents the thermal expansion coefficient of the substrate material, represents the Poisson's ratio of the substrate material, Indicates the sampling time The second temperature of the substrate layer is Indicates the sampling time The second temperature of the substrate layer is usually is room temperature, which is 298 Kelvin.

[0058] S05. Adjusting the output power of a heat source according to the first thermal stress and the second thermal stress.

[0059] In this embodiment, step S05 dynamically adjusts the output power of the heat source by comparing the first thermal stress of the aluminum film layer with the second thermal stress of the substrate layer to ensure that the thermal stress between the two layers can match and is within a controllable range, thereby avoiding product quality problems caused by process defects.

[0060] Specifically, the step S05 of adjusting the output power of the heat source according to the first thermal stress and the second thermal stress includes the following steps:

[0061] S051. Obtain a thermal difference between the first thermal stress and the second thermal stress, and use the thermal difference to match a proportional control gain parameter.

[0062] Furthermore, the thermal difference at any sampling time satisfies the following calculation formula: ,in, Indicates the sampling time The thermal difference under Indicates the sampling time The first thermal stress of the aluminum film layer is Indicates the sampling time The second thermal stress of the substrate layer.

[0063] What we know is that Less than zero means that the thermal stress of the aluminum film layer is greater than that of the substrate layer. This situation indicates that the temperature of the aluminum film layer rises faster or expands more, and its thermal stress is more significant than that of the substrate layer; when When the thermal stress difference is less than a certain threshold, it may lead to stress mismatch between the aluminum film layer and the substrate layer, thus causing problems such as warping, peeling or cracking of the film layer.

[0064] Similarly, Greater than zero means that the thermal stress of the substrate layer is greater than the thermal stress of the aluminum film layer. This situation indicates that the temperature of the substrate layer rises faster or expands more, or the temperature of the aluminum film layer does not rise sufficiently, resulting in a relatively large thermal stress in the substrate layer; when When the thermal stress difference is greater than a certain threshold, the substrate layer may be deformed due to excessive stress, thus affecting the bonding effect between the film layer and the substrate.

[0065] In this embodiment, the proportional control gain parameter is used to adjust the proportional relationship between the heat source output power and the thermal difference. It can be understood that by matching the appropriate proportional control gain, it can ensure that the system responds reasonably to the change of the thermal stress difference and avoid over-regulation or slow response.

[0066] Specifically, the size of the proportional control gain parameter determines the sensitivity of the heat source power adjustment, that is, the degree of influence of the stress difference on the heat source power adjustment. Further, the proportional control gain parameter satisfies the following matching model: ,in, Indicates the difference in thermal stress Matching proportional control gain parameters, Indicates the sampling time The thermal difference under represents the first type of proportional control gain parameter, represents the second type of proportional control gain parameter, represents the third type of proportional control gain parameter, , represents the first thermal stress difference threshold, , represents the second thermal stress difference threshold.

[0067] Further, is the first high sensitivity proportional control gain parameter; when the thermal difference Negative and less than the threshold When the thermal stress of the aluminum film layer is significantly greater than that of the substrate layer, it is necessary to quickly reduce the output power of the heat source to slow down the temperature rise of the aluminum film layer, thereby reducing the thermal stress difference between the aluminum film layer and the substrate layer.

[0068] Further, The second most sensitive proportional control gain parameter; when the thermal difference Positive and greater than the threshold When the thermal stress of the substrate layer greatly exceeds that of the aluminum film layer, it is necessary to quickly increase the output power of the heat source to increase the temperature of the aluminum film layer, thereby reducing the thermal stress difference between the aluminum film layer and the substrate layer.

[0069] Furthermore, when the thermal difference lie in and When the thermal stress difference between the two layers is small, a quick response is not required. In this case, a medium sensitivity gain parameter is used. .

[0070] S052. Adjust the output power of the heat source based on the thermal difference and the corresponding proportional control gain parameter.

[0071] Furthermore, the output power of the heat source at any sampling time satisfies the following adjustment model: ,in, Indicates the difference in thermal stress Matching proportional control gain parameters, Indicates the sampling time The thermal difference below.

[0072] In one embodiment, see Figure 2 , Figure 2 Schematic diagram of a system for optimizing parameters of composite current collector evaporation aluminum plating process provided by an embodiment of the present invention.

[0073] like Figure 2 As shown, the composite current collector evaporation aluminum plating process parameter optimization system provided by the present invention includes an input device, a processor, a memory and an output device, wherein the input device, the processor, the memory and the output device are interconnected, and the input device and the output device are respectively connected to the vacuum evaporation coating device signal.

[0074] Furthermore, the input device is used to collect and input various data required by the system, including real-time temperature data of the aluminum film layer and the substrate layer in the vacuum evaporation coating device, etc. In this embodiment, the input device may include but is not limited to: an infrared thermal imager, a temperature sensor, a user input interface, etc.

[0075] Furthermore, the memory is used to store a computer program, the computer program includes program instructions, and the processor is configured to call the program instructions to execute the composite current collector evaporation aluminum plating process parameter optimization method provided by the present invention.

[0076] Furthermore, the processor is the core part of the entire system and is responsible for performing all calculations, analysis and control operations. In this embodiment, after the infrared thermal imager acquires temperature data, the processor uses the program in the memory to analyze the data and automatically calculates the thermal stress according to the temperature fluctuation. If the stress difference is detected to exceed the threshold, the processor transmits the adjustment signal to the vacuum evaporation coating device through the output device to immediately adjust the heat source power, and feeds back the adjustment result to the output device.

[0077] Furthermore, the output device is used to display or transmit the results of system calculation and processing, including information such as temperature, thermal stress, heat source power, etc., for use by operators or other system modules. It can be a display device, a control signal output device, or other tools for visualization and feedback.

[0078] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the above embodiments, or replace some or all of the technical features therein with equivalents.

Claims

1. A method for optimizing process parameters of composite current collector evaporation aluminum plating, characterized in that: The steps include: Acquiring a first temperature, where the first temperature is the temperature of the aluminum film layer during the evaporation process; Based on the first temperature, a first thermal stress is obtained, where the first thermal stress is a thermal stress value of the aluminum film layer during the evaporation process; Acquiring a second temperature, where the second temperature is the temperature of the substrate layer during the evaporation process; Based on the second temperature, a second thermal stress is obtained, where the second thermal stress is a thermal stress value of the substrate layer during the evaporation process; adjusting the output power of a heat source according to the first thermal stress and the second thermal stress; The step of adjusting the output power of the heat source according to the first thermal stress and the second thermal stress comprises the following steps: The thermal difference between the first thermal stress and the second thermal stress is obtained, and the proportional control gain parameter is matched by using the thermal difference; the thermal difference at any sampling time satisfies the following calculation formula: ,in, Indicates the sampling time The thermal difference under Indicates the sampling time The first thermal stress of the aluminum film layer is Indicates the sampling time The second thermal stress of the substrate layer is induced; the proportional control gain parameter satisfies the following matching model: ,in, Indicates the difference in thermal stress Matching proportional control gain parameters, Indicates the sampling time The thermal difference under represents the first type of proportional control gain parameter, represents the second type of proportional control gain parameter, represents the third type of proportional control gain parameter, , represents the first thermal stress difference threshold, , represents a second thermal stress difference threshold; is the first high sensitivity proportional control gain parameter; when the thermal difference Negative and less than the threshold When the thermal stress of the aluminum film layer is significantly greater than that of the substrate layer, it is necessary to quickly reduce the output power of the heat source to slow down the temperature rise of the aluminum film layer, thereby reducing the thermal stress difference between the aluminum film layer and the substrate layer; The second most sensitive proportional control gain parameter; when the thermal difference Positive and greater than the threshold When the thermal stress of the substrate layer greatly exceeds that of the aluminum film layer, it is necessary to quickly increase the output power of the heat source to increase the temperature of the aluminum film layer, thereby reducing the thermal stress difference between the aluminum film layer and the substrate layer; When the thermal difference lie in and When the thermal stress difference between the two layers is small, a quick response is not required. In this case, a medium sensitivity gain parameter is used. ; Based on the thermal difference and the corresponding proportional control gain parameter, the output power of the heat source is adjusted; the output power of the heat source at any sampling time satisfies the following adjustment model: ,in, Indicates the difference in thermal stress Matching proportional control gain parameters, Indicates the sampling time The thermal difference below.

2. The composite current collector evaporation aluminum plating process parameter optimization method according to claim 1, characterized in that: The obtaining of the first temperature, where the first temperature is the temperature of the aluminum film layer during the evaporation process, comprises the following steps: Obtain two-dimensional temperature distribution data on the aluminum film layer during evaporation; According to the spatial resolution of the two-dimensional temperature distribution data, the surface of the aluminum film layer is divided into a plurality of temperature sub-regions, and each temperature sub-region corresponds to a temperature value; According to the size of the temperature value corresponding to the temperature sub-region, a target sub-region is screened out from the plurality of temperature sub-regions, and the temperature value corresponding to the target sub-region is the global maximum temperature or the global minimum temperature.

3. The composite current collector evaporation aluminum plating process parameter optimization method according to claim 2, characterized in that: The selection rule of the target sub-area is: If the temperature value corresponding to the target sub-region at the previous sampling moment is the global highest temperature, then the temperature value corresponding to the target sub-region at the next sampling moment is the global lowest temperature; If the temperature value corresponding to the target sub-region at the previous sampling moment is the global lowest temperature, then the temperature value corresponding to the target sub-region at the next sampling moment is the global highest temperature.

4. The composite current collector evaporation aluminum plating process parameter optimization method according to claim 3, characterized in that: The first thermal stress at any sampling time satisfies the following calculation model: , where i is a positive integer, i represents the sampling time sequence number, Indicates the sampling time The first thermal stress of the aluminum film layer is Represents the elastic modulus of the aluminum film material, Indicates the thermal expansion coefficient of the aluminum film material, represents the Poisson's ratio of the aluminum film material, Indicates the sampling time The first temperature of the aluminum film layer is Indicates the sampling time The first temperature of the aluminum film layer.

5. The composite current collector evaporation aluminum plating process parameter optimization method according to claim 2, characterized in that: The step of obtaining the second temperature, where the second temperature is the temperature of the substrate layer during the evaporation process, comprises the following steps: According to the temperature sub-regions on the surface of the aluminum film layer, the substrate layer is divided into a plurality of temperature sub-units, wherein the temperature sub-units correspond to the temperature sub-regions one by one; According to the temperature value corresponding to the temperature sub-region, a target sub-unit is selected from a plurality of temperature sub-units, wherein the temperature value of the temperature sub-region corresponding to the target sub-unit is the global maximum temperature or the global minimum temperature; Based on the temperature value of the temperature sub-region corresponding to the target sub-unit and according to the thermal conductivity characteristics of the substrate layer in the target sub-unit, a second temperature is obtained.

6. The composite current collector evaporation aluminum plating process parameter optimization method according to claim 5, characterized in that: The selection rule of the target subunit is: If the temperature value of the temperature sub-region corresponding to the target sub-unit at the previous sampling moment is the global highest temperature, then the temperature value of the temperature sub-region corresponding to the target sub-unit at the next sampling moment is the global lowest temperature; If the temperature value of the temperature sub-region corresponding to the target sub-unit at the previous sampling moment is the global lowest temperature, then the temperature value of the temperature sub-region corresponding to the target sub-unit at the next sampling moment is the global highest temperature.

7. The composite current collector evaporation aluminum plating process parameter optimization method according to claim 6, characterized in that: The second temperature satisfies the following calculation model: , where i is a positive integer, i represents the sampling time sequence number, Indicates the sampling time The second temperature of the substrate layer is Indicates the sampling time The temperature value of the temperature sub-region corresponding to the target sub-unit, represents the thermal conductivity of the substrate material, represents the thermal conductivity depth of the substrate layer in the target subunit, Indicates the density of the substrate layer material, represents the initial temperature of the substrate layer material, Indicates the sampling time The second temperature of the substrate layer.

8. The composite current collector evaporation aluminum plating process parameter optimization method according to claim 7, characterized in that: The second thermal stress satisfies the following calculation model: , where i is a positive integer, i represents the sampling time sequence number, Indicates the sampling time The second thermal stress of the substrate layer is represents the elastic modulus of the substrate material, represents the thermal expansion coefficient of the substrate material, represents the Poisson's ratio of the substrate material, Indicates the sampling time The second temperature of the substrate layer is Indicates the sampling time The second temperature of the substrate layer.

9. A composite current collector evaporation aluminum plating process parameter optimization system, characterized in that: It includes an input device, a processor, a memory and an output device, wherein the input device, the processor, the memory and the output device are interconnected, wherein the memory is used to store a computer program, the computer program includes program instructions, and the processor is configured to call the program instructions to execute the composite current collector evaporation aluminum plating process parameter optimization method according to any one of claims 1 to 8.

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