Pattern forming method and pattern forming apparatus

a pattern and mold technology, applied in the direction of photomechanical equipment, semiconductor/solid-state device testing/measurement, instruments, etc., can solve the problem of pattern breaking when removing the mold, and achieve the effect of preventing the mold from being damaged

Inactive Publication Date: 2009-02-19
KK TOSHIBA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0019]According to an aspect of the present invention, there is provided a pattern forming apparatus in which a mold having a pattern formed thereon is brought into contact with an imprinting material on a process surface of a substrate to transfer the pattern, the apparatus including: a holding part configured to hold the mold; a moving part configured to move the holding part in such a way that the mold is brought into contac

Problems solved by technology

However, in the nanoimprinting method, in the step of removing the mold contacted with the imprinting material on the substrate, it is necessary to remove the mold from the imprinting material in which th

Method used

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  • Pattern forming method and pattern forming apparatus
  • Pattern forming method and pattern forming apparatus

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Embodiment Construction

[0036]First, the steps of a typical photo-imprinting method will be described.

[0037]As shown in FIG. 1, onto the process surface of a substrate 101, a resist layer 102 formed of a photo-curing resin, for example, is applied as an imprinting material. A mold 103 that is an original plate having a pattern to be transferred on one surface is aligned with the resist layer 102, and then brought into contact with and pressed against the resist layer 102.

[0038]As shown in FIG. 2, the resist layer 102 is subjected to photoirradiation and cured, and as shown in FIG. 3, a pattern is transferred to a resist layer 102a.

[0039]As shown in FIGS. 4 and 5, the mold 103 is removed from the resist layer 102a.

[0040]As shown in FIG. 6, by anisotropic etching with oxygen plasma, for example, a remaining resist layer 102b on the substrate 101 shown in FIG. 5 is removed.

[0041]In the step of removing the mold shown in FIG. 4, it is necessary to remove the mold 103 from the pattern transferred to the resis...

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Abstract

According to an aspect of the present invention, there is provided a pattern forming apparatus in which a mold having a pattern is brought into contact with an imprinting material on a substrate to transfer the pattern, the apparatus including: a holding part configured to hold the mold; a moving part configured to move the holding part so that the mold is brought into contact with the imprinting material on the substrate and that the mold is removed therefrom; and a control part configured to control so that at least one of conditions of removing the mold can be changed based on conditions of the pattern formed in the mold, the conditions including a rate and an angle of removing the mold.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]An aspect of the present invention relates to a pattern forming method and a pattern forming apparatus.[0003]2. Description of the Related Art[0004]In the fabrication steps of semiconductor devices, in order to implement the processability and mass production of devices with fine patterns of 100 nm or below, for example, attention is focused on a nanoimprint lithography technique in which a patterned mold is brought into contact with a substrate such as a wafer for pattern transfer.[0005]In the nanoimprinting method, an original plate (mold) having a pattern on one surface thereof is brought into contact with an imprinting material such as a resist layer coated on a substrate and the imprinting material is then cured, whereby the pattern is transferred.[0006]For example, as the nanoimprinting method, the following methods are known: thermal imprinting methods using a thermoplastic resist disclosed in U.S. Pat. No. 5,772...

Claims

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Application Information

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IPC IPC(8): B29C59/02
CPCB29C59/022B29C2059/023B82Y10/00B29L2031/34G03F7/0002B29C59/002B82Y40/00H01L21/0337H01L22/12
InventorYONEDA, IKUO
OwnerKK TOSHIBA