Preparing method of triaxial anisotropic magnetoresistor

An anisotropic magnetic and magnetoresistive technology, applied in the field of 3-axis anisotropic magnetoresistive preparation, can solve the problems of over-etching, affecting 3-axis AMR performance, deterioration, etc., to ensure performance and avoid over-etching phenomenon Effect

CN104505460AActive Publication Date: 2015-04-08SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Publication Date
2015-04-08

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Abstract

The invention provides a preparing method of a triaxial anisotropic magnetoresistor. The preparing method includes: in first etching, etching only magnetic material on the bottom surface of a trench; in second etching, etching the magnetic material on the surface of a substrate to form planar magnetic resistance and vertical resistance spaced, thereby forming the triaxial anisotropic magnetoresistor. The bottom surface of the trench and the surface of the substrate are never etched at the same time, and thus, the surface of the substrate being over-etched due to difference of etching rates is avoided. Therefore, separate etching of the magnetic material on the trench and that on the surface of the substrate leads to no over-etching and ensures performance of the triaxial anisotropic magnetoresistor.
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Description

technical field

[0001] The invention relates to the field of semiconductor design and manufacture, and more specifically, the invention relates to a preparation method of 3-axis anisotropic magnetoresistance. Background technique

[0002] Anisotropic magnetoresistive (AMR) sensor is a new type of magnetoresistance effect sensor in modern industry, AMR sensor is becoming more and more important, especially in the latest smartphones, as well as parking sensors, angle sensors, automatic braking in the automotive industry System (ABS) sensors and tire pressure sensors are widely used. In addition to the anisotropic magnetoresistive (AMR) sensor, the current main technical branches of magnetic sensors include Hall sensor, giant magnetic sensor (GMR), tunnel junction magnetic sensor (TMR), etc. The sensitivity of the sensor is much higher, and the technology is more mature than GMR and TMR, so the application of anisotropic magnetoresistive (AMR) sensor is more extensive than tha...

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Embodiment Construction

[0033] The preparation method of the 3-axis anisotropic magnetoresistance of the present invention will be described in more detail below in conjunction with the schematic diagram, wherein a preferred embodiment of the present invention is shown, it should be understood that those skilled in the art can modify the present invention described here, and still The advantageous effects of the present invention are realized. Therefore, the following description should be understood as the broad knowledge of those skilled in the art, but not as a limitation of the present invention.

[0034] In the interest of clarity, not all features of an actual implementation are described. In the following description, well-known functions and constructions are not described in detail since they would obscure the invention with unnecessary detail. It should be appreciated that in the development of any actual embodiment, numerous implementation details must be worked out to achieve the develop...