Manufacturing method of semiconductor device

A manufacturing method and semiconductor technology, applied in the direction of semiconductor devices, electric solid state devices, electrical components, etc., can solve problems such as contamination of semiconductor devices

CN112382635APending Publication Date: 2021-02-19SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
Publication Date
2021-02-19

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Abstract

The invention provides a manufacturing method of a semiconductor device, which comprises the following steps of: removing a dielectric layer with partial thickness in a peripheral region through a dryetching process, so that over etching of the dielectric layer can be avoided, and pits are prevented from being formed in a control gate layer; then removing the residual dielectric layer in the peripheral region through a wet etching process, removing pollutants generated in dry etching in the previous step, avoiding the residual of the dielectric layer, and then removing a control gate layer, aspacer layer and a floating gate structure layer in the peripheral region. Since pits are prevented from being formed in the control gate layer, when the control gate layer, the spacer layer and thefloating gate structure layer in the peripheral region are removed, pits can be prevented from being formed in the semiconductor substrate in the active region, and the problems of defects caused by the pits and pollution to a semiconductor device are solved.
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Description

technical field

[0001] The invention relates to the technical field of semiconductors, in particular to a method for manufacturing a semiconductor device. Background technique

[0002] The existing manufacturing method of a semiconductor device generally includes: Step 1: providing a semiconductor substrate, the semiconductor substrate includes a storage area and a peripheral area, a shallow trench isolation structure is formed in the semiconductor substrate, and the shallow trench The isolation structure defines an active area in the semiconductor substrate, and a control gate layer and a dielectric layer are sequentially formed on the semiconductor substrate, and the control gate layer covers the shallow trench isolation structure and the semiconductor substrate; Step 2: sequentially etching the dielectric layer and the control gate layer in the peripheral area to remove the dielectric layer and the control gate layer in the peripheral area. However, in the above steps, a...

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Embodiment Construction

[0038] The manufacturing method of the semiconductor device proposed by the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become clearer from the following description. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0039] The inventors found that, in the prior art, the reason why pits are formed in the semiconductor substrate (active region) is that when the shallow trench isolation structure is formed, the top surface of the shallow trench isolation structure is higher than the floating gate structure The top surface of the layer, after forming the spacer layer, the control gate layer and the dielectric layer stacked in sequence, the top surface of the spacer layer ...