Diamond material ohmic contact electrode and its preparation method and application

Abstract

The invention discloses a diamond material ohmic contact electrode. The diamond material ohmic contact electrode comprises a diode material base of which the surface is provided with an ohmic contact electrode body; the ohmic contact electrode body comprises three metal electrode layers; the first electrode layer in contact with the diamond material base is a Pd metal layer; the second electrode layer in the middle is a metal layer with poor mutual dispersion performance; the third electrode layer far away from the diamond material base is a chemical inert metal layer. With the adoption of the ohmic contact electrode, the specific contact resistance rate can be effectively reduced, the adhering performance of the metal to the diamond material can be improved, and the thermal stability is improved, so that the electrical performance of an electronic element is improved. According to the preparation method and the electronic element employing the ohmic contact electrode structure and the preparation method, the specific contact resistance rate can be effectively reduced, the thermal and chemical stability of the ohmic contact are improved, and the electrical performance of the electronic element can be improved.

Description

technical field

[0001] The invention belongs to the technical field of diamond chemical vapor deposition, and relates to a diamond material ohmic contact electrode and a preparation method and application thereof. Background technique

[0002] Semiconductor single crystal materials have gone through four generations of development. The first generation of Si and Ge semiconductors brought mankind into the information age, and at the same time drove the intelligence and informatization of electronic systems. The second-generation semiconductors (GaAs, InP, MCT, etc.) have brought us optoelectronic devices, power electronic devices, radio frequency electronic devices, and space radiation-resistant devices, etc., which have triggered revolutions in information fields such as wireless communications and optical communications. The third-generation wide-bandgap semiconductors (GaN, SiC) can partially meet the requirements of the new generation of electronic systems for semiconduc...

Examples

Embodiment 1

[0055] A method for preparing a diamond material ohmic contact electrode comprises the following steps:

[0056] 1) Use microwave plasma chemical vapor deposition (MPCVD) technology to deposit a layer of high-quality single crystal diamond epitaxial film of about 1 micron on the cleaned high-temperature and high-pressure (HPHT) diamond material substrate, for use;

[0057] 2) Use a mixed acid solution (1:1) of sulfuric acid and nitric acid to clean the deposited epitaxial film in a water bath at 250°C for about 1 hour to remove the carbon elements in the non-diamond phase on the surface;

[0058] 3) Use MPCVD equipment to hydrogenate the diamond epitaxial film, the plasma power is about 1000W, and the processing time is about 5 minutes;

[0059] 4) Use acetone, isopropanol, and deionized water to ultrasonically clean the sample, and dry it;

[0060] 5) Spin-coat a layer of AZ5214 photoresist on the surface of the sample, bake the spin-coated photoresist-coated single crystal ...

Embodiment 2

[0066] A method for preparing a diamond material ohmic contact electrode comprises the following steps:

[0067] 1) Deposit a layer of high-quality single-crystal diamond epitaxial film of about 1 micron on the cleaned high-temperature and high-pressure (HPHT) diamond substrate by using hot filament chemical vapor deposition (HFCVD) technology, for use;

[0068] 2) Use a mixed acid solution (1:1) of sulfuric acid and nitric acid to clean the deposited epitaxial film in a water bath at 250°C for about 1 hour to remove the carbon elements in the non-diamond phase on the surface;

[0069] 3) Use MPCVD equipment to hydrogenate the diamond epitaxial film, the plasma power is about 1000W, and the processing time is about 5 minutes;

[0070] 4) Use acetone, isopropanol, and deionized water to ultrasonically clean the sample, and dry it;

[0071] 5) Spin-coat a layer of AZ5214 photoresist on the surface of the sample, bake the spin-coated photoresist-coated single crystal diamond sam...

Embodiment 3

[0076] A method for preparing a diamond material ohmic contact electrode comprises the following steps:

[0077] 1) Use a mixed acid solution (1:1) of sulfuric acid and nitric acid to clean the high-temperature and high-pressure (HPHT) diamond substrate in a water bath at 250°C for about 1 hour to remove the carbon element of the non-diamond phase on the surface;

[0078] 2) Use MPCVD equipment to hydrogenate the diamond substrate, the plasma power is about 1000W, and the processing time is about 5 minutes;

[0079] 3) Use acetone, isopropanol, and deionized water to ultrasonically clean the sample, and dry it;

[0080] 4) Spin-coat a layer of AZ5214 photoresist on the surface of the sample, bake the spin-coated photoresist-coated single crystal diamond sample at 95°C for 90 seconds, use the designed mask plate for UV lithography exposure for 6.5s, and develop 45s to remove the exposed photoresist, leaving the design pattern;

[0081] 5) Place the photolithographic sample in...

technical field

[0001] The invention belongs to the technical field of diamond chemical vapor deposition, and relates to a diamond material ohmic contact electrode and a preparation method and application thereof. Background technique

[0002] Semiconductor single crystal materials have gone through four generations of development. The first generation of Si and Ge semiconductors brought mankind into the information age, and at the same time drove the intelligence and informatization of electronic systems. The second-generation semiconductors (GaAs, InP, MCT, etc.) have brought us optoelectronic devices, power electronic devices, radio frequency electronic devices, and space radiation-resistant devices, etc., which have triggered revolutions in information fields such as wireless communications and optical communications. The third-generation wide-bandgap semiconductors (GaN, SiC) can partially meet the requirements of the new generation of electronic systems for semiconduc...

Examples

Embodiment 1

[0055] A method for preparing a diamond material ohmic contact electrode comprises the following steps:

[0056] 1) Use microwave plasma chemical vapor deposition (MPCVD) technology to deposit a layer of high-quality single crystal diamond epitaxial film of about 1 micron on the cleaned high-temperature and high-pressure (HPHT) diamond material substrate, for use;

[0057] 2) Use a mixed acid solution (1:1) of sulfuric acid and nitric acid to clean the deposited epitaxial film in a water bath at 250°C for about 1 hour to remove the carbon elements in the non-diamond phase on the surface;

[0058] 3) Use MPCVD equipment to hydrogenate the diamond epitaxial film, the plasma power is about 1000W, and the processing time is about 5 minutes;

[0059] 4) Use acetone, isopropanol, and deionized water to ultrasonically clean the sample, and dry it;

[0060] 5) Spin-coat a layer of AZ5214 photoresist on the surface of the sample, bake the spin-coated photoresist-coated single crystal ...

Embodiment 2

[0066] A method for preparing a diamond material ohmic contact electrode comprises the following steps:

[0067] 1) Deposit a layer of high-quality single-crystal diamond epitaxial film of about 1 micron on the cleaned high-temperature and high-pressure (HPHT) diamond substrate by using hot filament chemical vapor deposition (HFCVD) technology, for use;

[0068] 2) Use a mixed acid solution (1:1) of sulfuric acid and nitric acid to clean the deposited epitaxial film in a water bath at 250°C for about 1 hour to remove the carbon elements in the non-diamond phase on the surface;

[0069] 3) Use MPCVD equipment to hydrogenate the diamond epitaxial film, the plasma power is about 1000W, and the processing time is about 5 minutes;

[0070] 4) Use acetone, isopropanol, and deionized water to ultrasonically clean the sample, and dry it;

[0071] 5) Spin-coat a layer of AZ5214 photoresist on the surface of the sample, bake the spin-coated photoresist-coated single crystal diamond sam...

Embodiment 3

[0076] A method for preparing a diamond material ohmic contact electrode comprises the following steps:

[0077] 1) Use a mixed acid solution (1:1) of sulfuric acid and nitric acid to clean the high-temperature and high-pressure (HPHT) diamond substrate in a water bath at 250°C for about 1 hour to remove the carbon element of the non-diamond phase on the surface;

[0078] 2) Use MPCVD equipment to hydrogenate the diamond substrate, the plasma power is about 1000W, and the processing time is about 5 minutes;

[0079] 3) Use acetone, isopropanol, and deionized water to ultrasonically clean the sample, and dry it;

[0080] 4) Spin-coat a layer of AZ5214 photoresist on the surface of the sample, bake the spin-coated photoresist-coated single crystal diamond sample at 95°C for 90 seconds, use the designed mask plate for UV lithography exposure for 6.5s, and develop 45s to remove the exposed photoresist, leaving the design pattern;

[0081] 5) Place the photolithographic sample in...

Images