Ceramic component, method for preparing ceramic component, and plasma etching device

Abstract

Embodiments relate to a ceramic component and a plasma etching device including the same. One embodiment relates to a ceramic component, which is a ceramic component used in a plasma etching device, wherein the ceramic component includes a composite material and a matrix filled with the composite material, the composite material includes one selected from a boron carbide-based material and a carbon-based material, the matrix includes a boron carbide-based material, and the boron carbide-based material of the composite material has a Raman shift spectrum measured by Raman spectroscopy at 481 cm ‑1 The intensity of the peak near Ia is similar to that at 534 cm ‑1 The sum of the intensities of the peaks near Ib and Iab at 270 cm ‑1 The intensity of the peak near Ic is similar to that at 320 cm ‑1 The ratio Iab / Icd of the sum Icd of the intensities of the nearby peaks Id is 0.7 to 2.8, and the ratio Ie / If of the intensity Ie of the G band peak to the intensity If of the D band peak in the Raman shift spectrum measured by Raman spectroscopy of the carbon-based material of the above-mentioned composite material is 0.2 to 2.

Description

Technical Field

[0001] The embodiments relate to a ceramic component, a method for preparing the ceramic component, and a plasma etching device. Background Art

[0002] In a plasma processing device, an upper electrode and a lower electrode are arranged in a chamber, a substrate such as a semiconductor wafer or a glass substrate is mounted on the lower electrode, and power is applied between the two electrodes. Electrons accelerated by the electric field between the two electrodes, electrons emitted from the electrodes, or heated electrons cause ionization collisions with process gas molecules, thereby generating plasma of the process gas. Active substances such as free radicals or ions in the plasma perform the required micromachining, such as etching, on the surface of the substrate. In recent years, design rules in the manufacture of microelectronic devices and the like have become increasingly sophisticated, and in particular, higher dimensional accuracy is required for plasma etching, so significantly higher power is used than in the prior art. A focusing ring as a ceramic component affected by plasma is installed in the above-mentioned plasma processing device. The focusing ring is also called an edge ring or a cold ring, etc.

[0003] In the case of the above-mentioned focusing ring, when the power is increased, the wavelength effect of the standing wave and the skin effect of the electric field concentrated at the center of the electrode surface are generally maximized at the center of the substrate and become the lowest at the edge, so the non-uniformity of the plasma distribution on the substrate is deepened. If the plasma distribution on the substrate is non-uniform, the plasma processing becomes non-uniform, resulting in the deterioration of the quality of the microelectronic device.

[0004] Therefore, it is necessary to ensure a high-functionality focus ring in order to improve the yield of microelectronic devices using the wafer.

[0005] The above-mentioned background technology is technical information owned by the inventor for deriving the implementation mode, or technical information acquired in the derivation process, and is not necessarily known technology disclosed to the public before the application of the present invention.

[0006] As related existing patent documents, there is "focusing ring and plasma device including the same" disclosed in Korean Patent No. 10-2128595. Summary of the invention

[0007] Technical issues

[0008] An object of an embodiment is to provide a focus ring as a ceramic component having further improved physical properties.

[0009] Another object of an embodiment is to provide a method of manufacturing a semiconductor device more efficiently by applying a focus ring as a ceramic component having further improved physical properties.

[0010] Solutions to the problem

[0011] In order to achieve the above object, the ceramic component according to the embodiment can be a ceramic component used in a plasma etching device, and the ceramic component is characterized in that the surface of the ceramic component can include a matrix and a composite material disposed in contact with the matrix in the matrix, and the specific resistance of the ceramic component can be 10 -1 Ω·cm to 20Ω·cm, the matrix may include a boron carbide-based material, the composite material may include one selected from the group consisting of a boron carbide-based material, a carbon-based material and a combination thereof, the size of the composite material may be 40 μm or less, and the boron carbide-based material of the composite material has a Raman shift spectrum measured by Raman spectroscopy at 481 cm -1 The intensity of the peak near Ia is similar to that at 534 cm -1 The sum of the intensities of the peaks near Ib and Iab at 270 cm -1 The intensity of the peak near Ic is similar to that at 320 cm -1 The ratio Iab / Icd of the sum Icd of the intensities Id of nearby peaks can be 1 to 1.8, and the ratio Ie / If of the intensity Ie of the G band peak to the intensity If of the D band peak in the Raman shift spectrum measured by Raman spectroscopy of the carbon-based material of the above-mentioned composite material can be 0.2 to 2.

[0012] In one embodiment, the boron carbide-based material of the matrix has an intensity spectrum measured by Raman spectroscopy at 481 cm -1 The intensity of the peak near Ia is similar to that at 534 cm -1 The sum of the intensities Iab and Ib of the peaks near 270 cm -1 The intensity of the peak near Ic is similar to that at 320 cm -1 The ratio Iab / Icd of the total intensity Icd of the intensities Id of the nearby peaks may be 1.1 to 2.3.

[0013] In one embodiment, the average diameter of pores observed on the surface or cross-section of the ceramic member may be 5 μm or less.

[0014] In one embodiment, the above-mentioned ceramic component may include: a seating portion having a first height from a reference surface, and a main body portion having a second height from the above-mentioned reference surface; the above-mentioned seating portion may include an upper surface of the seating portion for seating the etching object, and the above-mentioned main body portion may include an upper surface of the main body portion directly etched by plasma.

[0015] In one embodiment, an inclined portion may be further included between the seating portion and the main body portion, and the inclined portion may include an upper surface of the inclined portion connecting an upper surface of the seating portion and an upper surface of the main body portion.

[0016] In one embodiment, the bending strength of the ceramic component may be greater than 300 MPa.

[0017] In one embodiment, the content of the carbon-based material may be greater than 0.5 wt % relative to the total content of the ceramic component.

[0018] In order to achieve the above object, according to another embodiment, the ceramic component can be a ceramic component used in a plasma etching device, wherein the surface of the ceramic component can include a matrix and a composite material disposed in contact with the matrix in the matrix, and the specific resistance of the ceramic component can be 10 -2 Ω·cm to 10 -1 Ω·cm, the matrix may include a boron carbide-based material, the composite material may include one selected from the group consisting of a boron carbide-based material, boron oxide, and a combination thereof, the size of the composite material may be less than 40 μm, and the boron carbide-based material of the composite material has a Raman shift spectrum measured by Raman spectroscopy at 481 cm -1 The intensity of the peak near Ia is similar to that at 534 cm -1 The sum of the intensities of the peaks near Ib and Iab at 270 cm -1 The intensity of the peak near Ic is similar to that at 320 cm -1 The ratio Iab / Icd of the sum Icd of the intensities Id of the nearby peaks may be 1 to 1.8.

[0019] In order to achieve the above-mentioned object, a ceramic component according to an embodiment has application as a component for manufacturing a semiconductor device.

[0020] In order to achieve the above object, the ceramic component for semiconductor manufacturing according to the embodiment may include a matrix and a composite material disposed in contact with the matrix in the matrix on the surface, and the specific resistance of the ceramic component may be 10 -1 Ω·cm to 20Ω·cm, the matrix may include a boron carbide-based material, the composite material may include one selected from the group consisting of a boron carbide-based material, a carbon-based material and a combination thereof, the size of the composite material may be 40 μm or less, and the boron carbide-based material of the composite material has a Raman shift spectrum measured by Raman spectroscopy at 481 cm -1 The intensity of the peak near Ia is similar to that at 534 cm -1 The sum of the intensities of the peaks near Ib and Iab at 270 cm -1 The intensity of the peak near Ic is similar to that at 320 cm -1The ratio Iab / Icd of the sum Icd of the intensities Id of nearby peaks can be 1 to 1.8, and the ratio Ie / If of the intensity Ie of the G band peak to the intensity If of the D band peak in the Raman shift spectrum measured by Raman spectroscopy of the carbon-based material of the above-mentioned composite material can be 0.2 to 2.

[0021] In order to achieve the above-mentioned object, a ceramic component according to an embodiment is used as a component for manufacturing a semiconductor device.

[0022] In order to achieve the above object, the ceramic component for semiconductor manufacturing according to the embodiment may include a matrix and a composite material disposed in contact with the matrix in the matrix on the surface, and the specific resistance of the ceramic component may be 10 -2 Ω·cm to 10 -1 Ω·cm, the matrix may include a boron carbide-based material, the composite material may include one selected from the group consisting of a boron carbide-based material, boron oxide, and a combination thereof, the size of the composite material may be less than 40 μm, and the boron carbide-based material of the composite material has a Raman shift spectrum measured by Raman spectroscopy at 481 cm -1 The intensity of the peak near Ia is similar to that at 534 cm -1 The sum of the intensities of the peaks near Ib and Iab at 270 cm -1 The intensity of the peak near Ic is similar to that at 320 cm -1 The ratio Iab / Icd of the sum Icd of the intensities Id of the nearby peaks may be 1 to 1.8.

[0023] In order to achieve the above-mentioned purpose, the preparation method of ceramic components according to the embodiment may include: a preparation step, preparing one of the first to third raw materials, the first raw material is a raw material including boron carbide, the second raw material is a raw material including boron carbide, boron oxide and carbon-based materials, and the third raw material is a raw material including boron carbide and carbon-based materials; and a processing step, preparing the ceramic components by sintering and shaping the raw materials; the preparation step may include a process of preparing raw material particles by slurrying and granulating the raw materials, and the zeta potential of the slurried raw materials may be above +15mV.

[0024] In order to achieve the above object, a plasma etching apparatus according to an embodiment may include the above-mentioned ceramic component.

[0025] Effects of the Invention

[0026] The ceramic component according to the embodiment has an advantage in that physical properties such as corrosion resistance and impact resistance are excellent.

[0027] The ceramic component according to the embodiment includes a composite material and a matrix filled with the composite material, wherein the intensity ratio of a specific wave number of the composite material and the matrix in a Raman spectrum satisfies a predetermined range, so that the matrix and the composite material can be coordinated and show good mechanical properties. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 It is a schematic diagram explaining the shape of the ceramic component according to the embodiment viewed from above (arrows indicate measurement points).

[0029] Figure 2 A schematic diagram illustrating a cross section of a ceramic component according to an embodiment.

[0030] Figure 3 A schematic diagram illustrating a structure of an etching apparatus to which a ceramic component according to an embodiment is applied.

[0031] Figure 4 A schematic diagram illustrating a sintering device used in a process of preparing a ceramic component according to an embodiment.

[0032] Figure 5 This is a photograph of the surface of the ceramic component according to the embodiment taken by a scanning electron microscope (BSE, backscattered electron).

[0033] Figure 6 This is a photograph of the surface of the ceramic component according to the embodiment taken by a scanning electron microscope (SE, secondary electron).

[0034] Figure 7 Raman shift spectra of the composite materials of Examples 1 to 3 obtained by Raman spectroscopy are shown (from the top: Example 1, Example 2(1), Example 2(2), Example 3(1), and Example 3(3)).

[0035] Figure 8 This is a cross-sectional photograph of the sintered body of Example 1 (1: composite material, matrix: matrix).

[0036] Fig. 9 The Raman shift spectrum of Example 1 according to Raman spectroscopy is shown (1: composite material, matrix: matrix).

[0037] Fig.10 This is a cross-sectional photograph of the sintered body of Example 2 (1, 2: composite material, matrix: matrix).

[0038] Fig.11 The Raman shift spectrum of Example 2 obtained by Raman spectroscopy is shown (1, 2: composite material, matrix: matrix).

[0039] Fig.12Cross-sectional photographs of the sintered body of Example 3 are shown (1, 2: composite materials).

[0040] Fig.13 The Raman shift spectrum of Example 3 obtained by Raman spectroscopy is shown (1, 2: composite material).

[0041] Fig.14 This is a cross-sectional photograph of the sintered body of Example 3 (3: composite material, matrix: matrix).

[0042] Fig.15 The Raman shift spectrum of Example 3 according to Raman spectroscopy is shown (3: composite material, matrix: matrix).

[0043] Fig.16 Raman shift spectra of matrices of Examples 1 to 3 according to Raman spectroscopy are shown. DETAILED DESCRIPTION

[0044] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that the present invention can be easily implemented by those skilled in the art. However, it should be noted that the present invention is not limited to these embodiments, but can be implemented in many other ways. Throughout the text, the same reference numerals represent the same components.

[0045] In the present specification, when a certain component “includes” another component, unless otherwise stated, it does not exclude the other components but further includes the other components.

[0046] In this specification, when a certain component is “connected” to another component, it includes not only a case of being “directly connected” but also a case of being “indirectly connected” with another component in between.

[0047] In this specification, B being located on A means that B is located on A in direct contact with A, or that B is located on A with another layer sandwiched between A and B, and is not limited to the meaning that B is located on A in direct contact with the surface of A.

[0048] In the present specification, "a combination thereof" as a term included in a Markush-type description refers to a mixture or combination of one or more selected from the group consisting of a plurality of components of the Markush-type description, thereby indicating that one or more selected from the group consisting of the plurality of components is included.

[0049] In the present specification, the description of "A and / or B" means "A, B, or A and B".

[0050] In this specification, unless otherwise specified, terms such as "first", "second" or "A", "B", etc. are used to distinguish the same terms from each other.

[0051] In the present specification, unless otherwise specified, an expression in the singular may be construed as including a meaning of the singular or the plural as read from the context.

[0052] Ceramic parts 10

[0053] In order to achieve the above object, the ceramic component 10 according to the embodiment can be a ceramic component used in a plasma etching device. The surface of the ceramic component can include a matrix and a composite material disposed in contact with the matrix in the matrix. The specific resistance of the ceramic component can be 10 -2 Ω·cm to 10 -1 Ω·cm or 10 -1 Ω·cm to 20Ω·cm, the matrix may include a boron carbide-based material, the composite material may include one selected from the group consisting of a boron carbide-based material, a carbon-based material and a combination thereof, the size of the composite material may be 40 μm or less, and the boron carbide-based material of the composite material has a Raman shift spectrum measured by Raman spectroscopy at 481 cm -1 The intensity of the peak near Ia is similar to that at 534 cm -1 The sum of the intensities of the peaks near Ib and Iab at 270 cm -1 The intensity of the peak near Ic is similar to that at 320 cm -1 The ratio Iab / Icd of the sum Icd of the intensities Id of the nearby peaks may be 1 to 1.8.

[0054] Figure 1 2 is a top view showing an example of a ceramic component according to an embodiment. Figure 2 Schematic diagram showing a cross section of a ceramic component according to an embodiment. Figure 1 and Figure 2 etc. to illustrate ceramic components.

[0055] The ceramic component 10 may be a focus ring used in a plasma etching device 500 .

[0056] The ceramic component 10 may include a composite material and a matrix filled with the composite material. Figure 5 and Figure 6 , the composite material and the matrix can be confirmed on the surface of the above-mentioned ceramic component.

[0057] The composite material may mainly include one of a boron carbide-based material and a carbon-based material, and may include some pores.

[0058] The boron carbide-based material of the composite material described above may include crystalline boron carbide, and may also include some amorphous boron carbide.

[0059] The boron carbide-based material of the composite material has a Raman shift spectrum at 481 cm -1 The intensity of the peak near Ia is similar to that at 534 cm -1 The sum of the intensities of the peaks near Ib and Iab at 270 cm -1 The intensity of the peak near Ic is similar to that at 320 cm -1 The ratio Iab / Icd of the sum Icd of the intensities Id of the nearby peaks may be 1 to 1.8. The above Iab / Icd may be 1.1 to 1.6.

[0060] In the boron carbide-based material of the composite material, the peak wave number of the Raman shift spectrum can be 270 cm -1 、320cm -1 、481cm -1 、534cm -1 、728cm -1 or 1088cm -1 , the error range can be ±10cm -1 , the highest intensity within each wavenumber error range is considered as the peak.

[0061] Referring to the Raman shift spectrum of single crystal boron carbide (B4C), it can be seen that at 270 cm -1 、320cm -1 The peak near the wave number is similar to that at 481 cm -1 、534cm -1 Depending on the carbon content in the boron carbide-based material, the pressure during preparation (sintering), additives, etc., the 270cm -1 、320cm -1 、481cm -1 and 534cm -1 The intensity and full width at half maximum of the peak may vary.

[0062] The boron carbide-based material of the composite material of the ceramic component 10 according to the embodiment has a specific carbon content and exhibits good crystallinity by making the above-mentioned Iab / Icd within the above-mentioned range, and is coordinated with the matrix. Thus, the strength and corrosion resistance of the ceramic component suitable for the plasma etching device can be ensured.

[0063] In the carbon-based material of the composite material, the peaks of the Raman shift spectrum are roughly divided into two types: D band peak and G band peak. The wave number of the D band can be about 1360±50cm -1 , the wave number of the above G band can be about 1580±50cm -1The D band peak can be considered not to be caused by the graphite structure, while the G band can be considered to be caused by the graphite structure. Therefore, it can be considered that the higher the ratio of the G band, the higher the ratio of graphite in the carbon-based material.

[0064] In the Raman shift spectrum measured by Raman spectroscopy, the carbon-based material of the composite material has a ratio of Ie / If of the intensity Ie of the G band peak to the intensity If of the D band peak of 0.2 to 2. The Ie / If can be 0.5 to 1.5. The carbon-based material of the composite material having the above characteristics has appropriate crystallinity and can be coordinated with the boron carbide-based material and the matrix of the composite material.

[0065] The matrix may mainly include a boron carbide-based material, and may further include boron carbide, may have coarse grains compared to the composite material, and may have some pores.

[0066] The boron carbide-based material of the above matrix has a Raman shift spectrum measured by Raman spectroscopy at 481 cm -1 The intensity of the peak near Ia is similar to that at 534 cm -1 The sum of the intensities of the peaks near Ib and Iab at 270 cm -1 The intensity of the peak near Ic is similar to that at 320 cm -1 The ratio Iab / Icd of the sum of the intensities Id and Icd of the peaks near the surface of the ceramic material may be 1.1 to 2.3. The above Iab / Icd may be 1.15 to 2. When the above Iab / Icd is within the above range, the ceramic material has a specific carbon content and exhibits good crystallinity, and is coordinated with the composite material. Thus, the strength and corrosion resistance of the ceramic component suitable for the plasma etching device can be ensured.

[0067] The size of the composite material may be 40 μm or less. The size of the composite material may be 30 μm or less. The size of the composite material may be 0.1 μm or more. The size of the composite material may be 0.3 μm or more. And, per unit area (cm 2 The number of the composite materials can be 2×10 5 / cm 2 Up to 6×10 5 / cm 2 . Per unit area (cm 2 ) can be 2.5×10 5 / cm 2 Up to 5.5×10 5 / cm 2 When a ceramic component having the size and number of the composite material described above is applied to a plasma etching device, appropriate strength and corrosion resistance can be ensured.

[0068] The specific resistance of the ceramic component 10 can be relatively low, that is, 10 -2 Ω·cm to 10 -1 Ω·cm. The specific resistance of the ceramic component can be relatively high, that is, 10 -1 Ω·cm to 20Ω·cm. The above-mentioned specific resistance value can be formed according to the normal pressure or pressurized conditions during preparation. In addition, the ceramic component with the above-mentioned specific resistance value can be easily shaped and can also present good surface quality. The above-mentioned ceramic component 10 may include: a placement portion 200 having a first height from a reference plane, and a main body portion 100 having a second height from the above-mentioned reference plane; the above-mentioned placement portion may include a placement portion upper surface 206 for placing the etching object 1, and the above-mentioned main body portion may include a main body portion upper surface 106 directly etched by plasma.

[0069] At least a portion of the etching object 1 is disposed on the seating portion 200 , and the seating portion 200 supports the etching object such as a wafer.

[0070] The main body 100 helps the etching object 1 to be uniformly etched into a desired shape without defects by adjusting the flow of plasma ions transferred to the etching object 1 to be smooth.

[0071] Although it is described that the main body 100 and the seating portion 200 are separated from each other, the main body 100 and the seating portion 200 may be provided separately from each other or may be provided integrally without a boundary.

[0072] The seating portion 200 has a first height, and the main body 100 has a second height.

[0073] The first height and the second height refer to the height to the upper surface of the placement portion and the height to the upper surface of the main body, respectively, based on the reference plane. In this case, the reference plane may be, for example, the lowest bottom surface of the bottom surface of the main body and the bottom surface of the placement portion.

[0074] The first height and the second height may be different heights from each other. More specifically, the second height is higher than the first height.

[0075] The upper surface 206 of the above-mentioned placement portion 200 may be a one-piece type without a separate layer division, or may be a differentiated type in which phase layers are differentiated when observing the above-mentioned placement portion and the upper surface of the above-mentioned placement portion from a cross section. In the case of the differentiated type, the upper surface of the above-mentioned placement portion may be in the form of a deposited layer or a coating. For example, the above-mentioned deposited layer or coating may be a layer including the above-mentioned matrix and the composite material. In the case where the upper surface of the above-mentioned placement portion is a differentiated type, the thickness of the upper surface of the placement portion in the form of the above-mentioned deposited layer or coating may be 1% to 40% of the thickness of the placement portion based on the etching. The thickness of the upper surface of the above-mentioned placement portion may be 5% to 25% of the thickness of the placement portion based on the etching.

[0076] The upper surface 206 of the seating portion may include an unexposed surface of the seating portion on which the etching object 1 is disposed and an exposed surface of the seating portion on which the etching object is not disposed.

[0077] The main body 100 and the main body upper surface 106 may be of an integrated type without a separate layer division, or may be of a differentiated type in which phase layers are differentiated when observing the main body and the main body upper surface from a cross section. In the case of a differentiated type, the main body upper surface may be in the form of a deposited layer or a coating. For example, the deposited layer or the coating may be a layer including the matrix and the composite material. In the case where the main body upper surface is of a differentiated type, the thickness of the main body upper surface in the form of the deposited layer or the coating may be 1% to 40% of the thickness of the main body based on the thickness before etching. The thickness of the main body upper surface may be 5% to 25% of the thickness of the main body based on the thickness before etching.

[0078] The ceramic component 10 may further include an inclined portion 150 for connecting the seating portion 200 and the main body 100 .

[0079] The seating portion 200 and the main body 100 have different heights, and the inclined portion 150 may connect the different heights of the seating portion 200 and the main body 100 .

[0080] Although it is described that the main body 100 , the seating portion 200 , and the inclined portion 150 are separated from each other, the main body 100 , the seating portion 200 , and the inclined portion 150 may be provided separately from each other or may be provided integrally without boundaries.

[0081] The inclined portion 150 includes an inclined portion upper surface 156 for connecting the seating portion upper surface 206 and the main body portion upper surface 106 .

[0082] The inclined portion 150 and the upper surface 156 of the inclined portion may be of an integral type without a separate layer division, or may be of a differentiated type in which phase layers are differentiated when observing the inclined portion and the upper surface of the inclined portion from a cross section. In the case of the differentiated type, the upper surface of the inclined portion may be in the form of a deposited layer or a coating. For example, the deposited layer or the coating may be a layer including the matrix and the composite material. In the case where the upper surface of the inclined portion is of a differentiated type, the thickness of the upper surface of the inclined portion in the form of the deposited layer or the coating may be 1% to 40% of the thickness of the inclined portion based on the etching before. The thickness of the upper surface of the inclined portion may be 5% to 25% of the thickness of the inclined portion based on the etching before.

[0083] The inclined portion upper surface 156 is configured to have an inclined portion angle (not shown). The inclined portion angle can be measured based on the unexposed surface of the seating portion and can have an angle greater than 0 degrees and equal to or less than about 110 degrees.

[0084] When the length of the inclined portion 150 is 0 mm, the angle between the seating portion and the main body may be greater than about 90 degrees and less than about 110 degrees. When the angle of the inclined portion 150 is less than about 90 degrees, the length of the inclined portion may be greater than 0 mm.

[0085] The angle of the inclined portion may be linear or nonlinear when the cross section of the inclined portion upper surface 156 is generally viewed. The angle of the inclined portion is measured based on an imaginary line connecting two points, P1 (not shown) where the seating portion upper surface 206 meets the inclined portion upper surface and P2 (not shown) where the inclined portion upper surface meets the main body portion upper surface 106.

[0086] For example, the above-mentioned inclined portion angle can be about 30 degrees to about 70 degrees based on the unexposed surface of the above-mentioned placement portion. The above-mentioned inclined portion angle can be about 40 degrees to about 60 degrees. When having the above-mentioned inclined portion angle, the flow of plasma can be more stably controlled during plasma etching.

[0087] The seating portion 200 , the inclined portion 150 , and the main body 100 may be respectively in a ring shape, but are not limited thereto, and the shapes of the seating portion, the inclined portion, and the main body may be changed according to the shape of the etching object 1 .

[0088] The ceramic component may include a material that is difficult to shape process as a highly corrosion-resistant material. A focus ring, which is a general ceramic component, may sometimes break during a shape process having a step difference. Embodiments provide a ceramic component having Raman characteristics and further improved by using a material having more improved characteristics so that it is easier to shape process.

[0089] The ceramic member 10 has a PS1 as one location on the upper surface of the seating portion, a PS2 as one location on the upper surface of the inclined portion, and a PS3 as one location on the upper surface of the main body portion.

[0090] The difference between the maximum and minimum values ​​of the residual stress of the ceramic component 10 measured by the PS1 and the PS3 may be within 40% of the average value of the PS1 and the PS3. The difference between the maximum and minimum values ​​of the residual stress measured by the PS1 and the PS3 may be within 15% of the average value of the PS1 and the PS3. The difference between the maximum and minimum values ​​of the residual stress measured by the PS1 and the PS3 may be within 10% of the average value of the PS1 and the PS3, or may be 1% to 10%. The ceramic component having the above characteristics may have more stable processability and stability.

[0091] The difference between the residual stress measured at the above PS1 and the residual stress measured at the above PS3 of the above-mentioned ceramic component 10 may be -600MPa to +600MPa. The difference between the residual stress measured at the above PS1 and the residual stress measured at the above PS3 may be -300MPa to +300MPa. The difference between the residual stress measured at the above PS1 and the residual stress measured at the above PS3 may be -200MPa to +200MPa. The difference between the residual stress measured at the above PS1 and the residual stress measured at the above PS3 may be -150MPa to +150MPa. The difference between the residual stress measured at the above PS1 and the residual stress measured at the above PS3 may be -130MPa to +130MPa. In this case, a ceramic component with higher density and excellent machinability can be obtained.

[0092] The standard deviation of the residual stress of the ceramic component 10 measured at the PS1, the PS3 and the PS2 may be less than 300 MPa. The standard deviation of the residual stress measured at the PS1, the PS3 and the PS2 may be less than 250 MPa. The standard deviation of the residual stress of the ceramic component measured at the PS1, the PS3 and the PS2 may be less than 150 MPa. The standard deviation of the residual stress measured at the PS1, the PS3 and the PS2 may be less than 75 MPa. The standard deviation of the residual stress measured at the PS1, the PS3 and the PS2 may be greater than 0 MPa. The standard deviation of the residual stress measured at the PS1, the PS3 and the PS2 may be greater than 0.1 MPa. With the above standard deviation, a focusing ring with higher density and excellent machinability can be obtained.

[0093] The standard deviation of the residual stress of the ceramic component 10 measured at the PS1, the PS3 and the PS2 may be less than 20% of the average of the residual stress measured at the PS1, the PS2 and the PS3. The standard deviation of the residual stress measured at the PS1, the PS3 and the PS2 may be less than 15% of the average of the residual stress measured at the PS1, the PS2 and the PS3. The standard deviation of the residual stress measured at the PS1, the PS3 and the PS2 may be less than 10% of the average of the residual stress measured at the PS1, the PS2 and the PS3. The standard deviation of the residual stress measured at the PS1, the PS3 and the PS2 may be less than 8% of the average of the residual stress measured at the PS1, the PS2 and the PS3. With the above characteristics, a ceramic component with higher density and excellent machinability can be obtained.

[0094] The difference between the residual stress of the ceramic component 10 measured at the PS1, the PS3 and the PS2 and the average of the residual stress measured at the PS1, the PS2 and the PS3 may be -350MPa to +350MPa. The difference between the residual stress measured at the PS1, the PS3 and the PS2 and the average of the residual stress measured at the PS1, the PS2 and the PS3 may be -300MPa to +300MPa. The difference between the residual stress measured at the PS1, the PS3 and the PS2 and the average of the residual stress measured at the PS1, the PS2 and the PS3 may be -250MPa to +250MPa. The difference between the residual stress measured at the PS1, the PS3 and the PS2 and the average of the residual stress measured at the PS1, the PS2 and the PS3 may be -200MPa to +200MPa. With the above characteristics, a focus ring with higher density and excellent machinability can be obtained.

[0095] The difference between the maximum value and the minimum value of the residual stress of the ceramic component 10 measured at the PS1, the PS3 and the PS2 may be within 25% of the average value of the residual stress measured at the PS1, the PS3 and the PS2. The difference between the maximum value and the minimum value of the residual stress of the ceramic component measured at the PS1, the PS3 and the PS2 may be within 20% of the average value of the residual stress measured at the PS1, the PS3 and the PS2. The difference between the maximum value and the minimum value of the residual stress of the ceramic component measured at the PS1, the PS3 and the PS2 may be within 15% of the average value of the residual stress measured at the PS1, the PS3 and the PS2. Furthermore, the difference between the maximum value and the minimum value of the residual stress of the focusing ring measured at the PS1, the PS3 and the PS2 may be within 10% of the average value of the residual stress measured at the PS1, the PS3 and the PS2. The difference between the maximum value and the minimum value of the residual stress measured at the PS1, the PS3, and the PS2 may be within 5% of the average value of the residual stress measured at the PS1, the PS3, and the PS2. The difference between the maximum value and the minimum value of the residual stress measured at the PS1, the PS3, and the PS2 may be more than 1% of the average value of the residual stress measured at the PS1, the PS3, and the PS2. With the above-mentioned residual stress distribution, more stable shape processing can be performed, and a more stable corrosion-resistant material can be obtained.

[0096] The standard deviation of the residual stress measured on the surface of the ceramic component 10 at different distances from the center may be 350 MPa or less.

[0097] The standard deviation of the residual stress measured on the surface of the ceramic component 10 at different distances from the center may be 300 MPa or less. The standard deviation of the residual stress measured on the surface of the ceramic component at different distances from the center may be 250 MPa or less. The standard deviation of the residual stress measured on the surface of the ceramic component at different distances from the center may be 200 MPa or less.

[0098] The standard deviation of residual stress measured on the surface of the ceramic component 10 at different distances from the center may be 120 MPa or less. The standard deviation of residual stress measured on the surface of the ceramic component at different distances from the center may be 100 MPa or less.

[0099] As a result of repeated measurements by the inventors, it was confirmed that the difference in residual stress measured on the surface of multiple locations at the same distance from the center was not large. Therefore, in the case of having the above-mentioned characteristics, the residual stress distribution is relatively uniform in essence, so that a ceramic component, namely a focus ring, having excellent processability and stability can be provided.

[0100] The center of the ceramic component 10 refers to, for an annular ceramic component, the center of the inner diameter circle is the center of the ceramic component, and for a non-annular ceramic component, the intersection of the major axis and the minor axis is the center.

[0101] The surface of the ceramic component 10 may be ground. In the ceramic component, the upper surface 206 of the seating portion and the upper surface 106 of the main body may be ground, or the upper surface of the seating portion, the upper surface of the main body and the upper surface 156 of the inclined portion may be ground.

[0102] The arithmetic mean roughness Ra of the surface of the ceramic component 10 may be 2 μm or less. The arithmetic mean roughness Ra of the surface of the ceramic component may be 1.7 μm or less. The arithmetic mean roughness Ra of the surface of the ceramic component may be 0.05 μm or less.

[0103] The maximum height roughness Rt of the surface of the ceramic component 10 may be 0.1 μm to 25 μm. The maximum height roughness Rt of the surface may be 0.1 μm to 10 μm. The maximum height roughness Rt of the surface may be 0.1 μm to 5 μm. The maximum height roughness Rt of the surface may be 0.1 μm to 2 μm.

[0104] For example, the arithmetic mean roughness Ra of the main body upper surface 106 may be 0.5 μm or less, and the maximum height roughness Rt may be 8 μm or less.

[0105] The arithmetic mean roughness Ra of the inclined portion upper surface 156 may be 2 μm or less, and the maximum height roughness Rt may be 15 μm or less.

[0106] The arithmetic mean roughness Ra of the seating portion upper surface 206 may be 2 μm or less, and the maximum height roughness Rt may be 15 μm or less.

[0107] When the roughness characteristics are as described above, the problem of particle formation that may occur due to physical factors when plasma etching is performed can be substantially suppressed.

[0108] The ceramic component 10 is an annular component, and the difference between its outer diameter and inner diameter can be 10 mm to 80 mm. The difference between the outer diameter and inner diameter can be 15 mm to 60 mm. The difference between the outer diameter and inner diameter can be 20 mm to 50 mm.

[0109] The ceramic component 10 is an annular component, and its thickness may be 1 mm to 45 mm. The thickness of the ceramic component may be 1.5 mm to 40 mm. The thickness of the ceramic component may be 2 mm to 38 mm.

[0110] The ceramic component 10 is an annular component, and its inner diameter may be greater than 160 mm. The inner diameter of the ceramic component may be greater than 200 mm. The inner diameter of the ceramic component may be greater than 300 mm. The inner diameter of the ceramic component may be less than 450 mm.

[0111] The ceramic component 10 may have a porosity of about 10% or less. The ceramic component may have a porosity of about 3% or less. The ceramic component may have a porosity of about 1% or less. The ceramic component 10 may have a porosity of about 0.01% or more. The ceramic component with low porosity as described above may exhibit better corrosion resistance.

[0112] The average diameter of the pores observed from the surface or cross section of the ceramic component 10 may be 5 μm or less. The average diameter of the pores may be 3 μm or less. The average diameter of the pores may be 1 μm or less. The average diameter of the pores may be 0.1 μm or more. Furthermore, based on the total area of ​​the pores, the area of ​​the portion where the diameter of the pores is 10 μm or more may be 5% or less. The ceramic component having the average diameter of the pores may have improved corrosion resistance. At this time, the average diameter of the pores is derived from the diameter of a circle having the same area as the cross-sectional area of ​​the pores.

[0113] The boron carbide-based material included in the above-described ceramic member 10 may have a form in which particles containing boron carbide are necked with each other.

[0114] The ceramic component 10 may include deposited boron carbide and / or sintered boron carbide.

[0115] The ceramic component 10 may include a boron carbide-based material, which may be boron carbide (B4C). The ceramic component may include more than 85% by weight of boron carbide relative to the total weight. The ceramic component may include more than 90% by weight of boron carbide relative to the total weight. The ceramic component may include more than 93% by weight of boron carbide relative to the total weight. The ceramic component may include less than 99.9% by weight of boron carbide relative to the total weight.

[0116] In addition to the boron carbide-based material, the ceramic component 10 may further include a carbon-based material. The content of the carbon-based material may be 0.5% by weight or more relative to the total weight. The content of the carbon-based material may be 1% by weight or more relative to the total weight. The content of the carbon-based material may be 15% by weight or less relative to the total weight. The content of the carbon-based material may be 10% by weight or less relative to the total weight. A ceramic component that satisfies the content of the carbon-based material may exhibit excellent corrosion resistance.

[0117] When the etching object 1, ie, a wafer, is placed in a chamber of a plasma etching device, the ceramic component 10 may be used as a support for supporting the etching object, ie, the wafer.

[0118] Method for preparing ceramic parts

[0119] In order to achieve the above object, a method for preparing a ceramic component according to another embodiment may include: a preparation step of preparing a raw material including boron carbide; and a processing step of preparing the ceramic component by sintering and shaping the raw material.

[0120] In the preparation step, the raw material includes boron carbide powder. The boron carbide powder may be a high-purity boron carbide powder having a boron carbide content of 99.9 wt % or more. The boron carbide powder may also be a low-purity boron carbide powder having a boron carbide content of 95 wt % to 99.9 wt %.

[0121] The boron carbide powder can be 50 The boron carbide powder can be made of D 50 The boron carbide powder may be prepared by mixing the boron carbide powder with a particle size of about 0.3 μm to about 1.5 μm. 50 The boron carbide powder may be prepared by mixing the boron carbide powder with a particle size of about 0.4 μm to about 1.0 μm. 50 The average particle size is about 0.4 μm to about 0.8 μm. When a powder with a small average particle size is used, densification of the sintered body can be achieved more easily.

[0122] The boron carbide powder can be 50 The boron carbide powder can be made into powder with an average particle size of 2 μm to 10 μm. 50 The boron carbide powder can be prepared by mixing the boron carbide powder with a particle size of 3 μm to 8 μm. 50 The average particle size is 4 to 6 μm. When the boron carbide powder having the above particle size range is used, the process productivity can be improved while achieving densification of the sintered body.

[0123] The raw materials may further include additives. The additives may be added to the process of preparing the ceramic component in the form of powder, liquid or gas. Examples of materials used as the additives include carbon-based materials, boron oxide, silicon, silicon carbide, silicon oxide, boron nitride, boron or silicon nitride, etc. The content of the additives may be about 0.1 wt % to about 30 wt % relative to the raw materials.

[0124] The above-mentioned additive can be a sintering performance improver. The above-mentioned sintering performance improver is contained in the above-mentioned raw material to improve the physical properties of boron carbide. The above-mentioned sintering performance improver can be one or more selected from the group consisting of carbon-based materials, boron oxide, silicon, silicon carbide, silicon oxide, boron nitride, silicon nitride and combinations thereof. The content of the above-mentioned sintering performance improver can be about 30 weight % or less relative to the total amount of the above-mentioned raw materials. Specifically, the content of the above-mentioned sintering performance improver can be about 0.001 weight % to about 30 weight % relative to the total amount of the above-mentioned raw materials. The content of the above-mentioned sintering performance improver can be about 0.1 weight % to 15 weight % relative to the total amount of the above-mentioned raw materials. The content of the above-mentioned sintering performance improver can be about 1 weight % to 10 weight % relative to the total amount of the above-mentioned raw materials. When the content of the above-mentioned sintering performance improver is greater than 30 weight %, the strength of the sintered body will be reduced instead.

[0125] The above-mentioned raw material may include a boron carbide raw material such as boron carbide powder as a remainder other than the above-mentioned sintering property improver.

[0126] When a carbon-based material is used as the sintering performance improver, the carbon-based material may be added with a resin such as a phenolic resin or a novolac resin that is converted to carbon during carbonization, or carbon obtained by carbonizing the resin through a carbonization process. The carbonization process of the resin may generally be a process for carbonizing a polymer resin. The phenolic resin having a residual carbon content of 40% by weight or more may be used.

[0127] When using a carbon-based material as the above-mentioned sintering performance improver, the amount of the above-mentioned carbon-based material can be 1% to 30% by weight relative to the total weight of the raw material. The amount of the above-mentioned carbon-based material can be 1% to 25% by weight relative to the total weight of the raw material. The amount of the above-mentioned carbon-based material can be 2% to 15% by weight relative to the total weight of the raw material. The amount of the above-mentioned carbon-based material can be 3% to 10% by weight relative to the total weight of the raw material. When using a carbon-based material as the above-mentioned sintering performance improver with the above-mentioned content, boron carbide that easily induces necking between particles and has a larger particle size and a higher relative density can be obtained. However, when the content of the above-mentioned carbon-based material is greater than 10% by weight, gases such as carbon dioxide are excessively produced during pressurization during the sintering process, so workability may decrease.

[0128] When the boron oxide and the carbon are used together as the sintering property improver, the relative density of the sintered body can be further increased, so that a sintered body having a reduced carbon area existing in pores and a more improved density can be prepared.

[0129] The above-mentioned boron oxide and the above-mentioned carbon may be used in a weight ratio of 1:0.8 to 4. In this case, a sintered body having a more improved relative density may be obtained.

[0130] As required, the above raw materials may also include a dispersant, a binder, a defoaming agent, a solvent, etc.

[0131] The dispersant may be 2-propenoic acid, ethanol, sodium salt, ammonium salt, etc. The content of the dispersant may be 0.08 wt % to 2 wt % relative to the total weight. The content of the dispersant may be 0.1 wt % to 1.5 wt % relative to the total weight.

[0132] The binder may be polyvinyl butyral, polyvinyl alcohol, phenol resin, acrylic resin, or the like.

[0133] The defoaming agent may be a nonionic surfactant or the like.

[0134] The solvent may be deionized water (DI water), ethanol, toluene, etc.

[0135] The raw materials do not contain materials that can generate solid byproducts during the semiconductor process, or contain very low amounts of the materials. For example, metals such as iron, copper, chromium, nickel or aluminum can be mentioned as examples of materials that can generate the byproducts. The content of the materials that can generate the byproducts can be 500 ppm or less relative to the raw materials.

[0136] The preparing step may include a process of preparing raw material particles by slurrying and granulating the raw material.

[0137] The slurrying is a process of mixing raw materials sufficiently and substantially uniformly by a method such as ball milling. A solvent may be used together, and alcohol such as methanol, ethanol, butanol, or water may be used as the solvent. The amount of the solvent used may be about 60% by volume to about 80% by volume based on the entire slurry. Specifically, polymer balls may be used as ball milling, and the slurry mixing process may be performed for about 5 hours to about 20 hours.

[0138] The zeta potential of the slurry raw material prepared by the above slurrying may be above +15 mV. The zeta potential of the slurry raw material may be above +17.4 mV. The zeta potential of the slurry raw material may be above +20.6 mV. The zeta potential of the slurry raw material may be above +25 mV. The zeta potential of the slurry raw material may be below +40 mV. The slurry raw material having the above zeta potential range may make the internal substances uniformly dispersed so as to present uniform physical properties when sintered through the subsequent process.

[0139] The granulation can be achieved by spraying the slurry and removing the solvent contained in the slurry by evaporation, etc. to granulate the raw material. The granulated raw material particles prepared as described above are characterized in that the particles themselves are generally round and have a relatively constant particle size.

[0140] The size of the raw material particles after the granulation process can be 50 μm to 160 μm. The size of the raw material particles can be 60 μm to 100 μm. When the raw material particles having the above characteristics are used, they can be easily filled into a mold in the subsequent sintering process, and the workability can be further improved.

[0141] The above-mentioned processing step may include a process of filling the above-mentioned raw material into a mold, a molding mold, etc. for sintering. The above-mentioned processing step may include a molding process of molding the molded body into a shape for forming raw material particles before the above-mentioned sintering. The above-mentioned molding process may include cold isostatic pressing (CIP), green body processing, etc.

[0142] The above-mentioned processing steps may include a carbonization process for carbonizing the raw material particles filled in the mold, the molding die, etc. or the molded body after the above-mentioned molding process before the above-mentioned sintering, thereby, organic additives such as aldehyde resin, phenolic varnish resin, etc. that may be contained in the molded body can be carbonized.

[0143] The sintering in the above processing step can be pressure sintering or normal pressure sintering.

[0144] Many attempts have been made to prepare boron carbide sintered bodies by the above-mentioned pressure sintering method. However, preparation-evaluation is usually performed using small samples called test pieces with a width and length of about 30 mm or less. It is not easy to prepare boron carbide sintered bodies with larger diameters.

[0145] When a relatively large-sized pressure sintered body is prepared, it is preferred to prepare a pressure sintered body having uniform properties (physical properties) as a whole, but it is difficult to prepare a pressure sintered body having relatively more constant characteristics as a whole. In particular, in the case of a pressure sintered body, unlike a normal pressure sintered body, it has a characteristic that cracks or breakages easily occur during shape processing. One of the reasons for this characteristic is that the pressure sintered body has non-uniform properties as a whole.

[0146] The mold of the above-mentioned processing step may have a length or diameter of 450 mm or more. In order to prepare a ceramic component as an annular component with a diameter of 320 mm or more, it is necessary to prepare a sintered body with a relatively large diameter or length. Generally, the size of the sintered body is reduced during the sintering process, and considering the amount lost during the subsequent shape processing in order to make the ceramic component have a precise annular shape, the size of the above-mentioned mold is preferably 450 mm or more. The size of the above-mentioned mold can be 450 mm to 600 mm.

[0147] The sintering may be performed at an appropriate sintering temperature and sintering pressure.

[0148] The sintering temperature may be about 1800° C. to about 2500° C. The sintering temperature may be about 1800° C. to about 2200° C. The sintering pressure may be normal pressure. The sintering pressure may be about 10 MPa to about 110 MPa. The sintering pressure may be about 15 MPa to about 60 MPa. The sintering pressure may be about 17 MPa to about 30 MPa. When the molding step is performed at the sintering temperature and the sintering pressure, high-quality ceramic components can be prepared more efficiently.

[0149] In the case of pressure sintering, the sintering time may be 0.5 to 10 hours. The sintering time may be 0.5 to 7 hours. The sintering time may be 0.5 to 4 hours. The sintering time of the pressure sintering is relatively short compared to the sintering process performed under normal pressure, and even with such a short time, a ceramic component having the same or higher strength can be prepared.

[0150] The sintering may be performed in a reducing atmosphere. In this case, by reducing substances such as boron oxide that may be formed by the reaction of the boron carbide powder with oxygen in the air, a highly corrosion-resistant boron carbide having a higher boron carbide content and a reduced carbon aggregation region is prepared.

[0151] During the sintering process, the boron carbide powder grows and necks together to form a sintered body with high strength. In addition, the additives used at the same time vary according to the temperature and pressure to inhibit or promote the growth of the boron carbide powder. In addition, in the sintering performed simultaneously with pressurization, the pressurized sintered body can have a denser microstructure.

[0152] The above-mentioned method for preparing a ceramic component may include a subsequent heat treatment step after the heat treatment in the above-mentioned processing step.

[0153] The subsequent heat treatment includes: a primary treatment performed at a first temperature for more than 2 hours, and a secondary treatment performed at a second temperature for more than 2 hours; the first temperature is a temperature higher than the second temperature.

[0154] The first temperature may be higher than 1650° C., and the second temperature may be higher than 1400° C. When the primary treatment and the secondary treatment are performed within the temperature range, the heat treatment is more effectively performed.

[0155] The first temperature may be 1650° C. to 1950° C. The primary treatment may be performed for 1 hour to 8 hours.

[0156] The second temperature may be 1400° C. to 1600° C. The secondary treatment may be performed for 1 hour to 8 hours.

[0157] When the above-mentioned post-heat treatment is performed at the first temperature and the second temperature, the shape workability of the pressurized sintered body becomes quite high. This is considered to be because of changes in residual stress caused by the heat treatment.

[0158] The shape processing of the above-mentioned processing step is a process of separating or removing a part of the above-mentioned sintered body to have a desired shape. The above-mentioned shape processing includes ring processing of processing the sintered body into a ring-shaped sintered body and shape processing of processing the ring-processed sintered body into the shape of a focusing ring.

[0159] The above-mentioned shape processing can be performed by electric discharge machining, a water jet method, a laser method, etc., but the present invention is not limited thereto.

[0160] After the desired shape is formed by the above-mentioned shape processing, it may be further subjected to a polishing process. The above-mentioned polishing process is a process for reducing the surface roughness of the ceramic component by physically suppressing the formation of particles. The above-mentioned polishing process may be performed by a grinding process using a slurry containing industrial diamond or the like, and preferably, in order to prepare a ceramic component with excellent particle suppression characteristics, the processing is performed so that the maximum height roughness Rt can be less than 15 μm and the arithmetic mean roughness Ra can be less than 2 μm.

[0161] The sintering in the above-mentioned method for preparing the ceramic component can be carried out by Figure 4 The sintering process is carried out using the sintering device 300 (hot pressure sintering device) shown.

[0162] When the raw material 380 is loaded into the mold 330, the mold 330 is located between the upper pressurizing part 332 and the lower pressurizing part 334 in the sintering furnace 310 of the sintering device 300, and is pressurized and heated by the pressurizing part 320, etc., so that sintering can be performed. At this time, the sintering furnace 310 can be adjusted to a reduced pressure atmosphere, or the process can be performed in a reducing atmosphere. For example, the mold 330 can be a graphite mold, and the upper pressurizing part 332 and the lower pressurizing part 334 can be graphite tools (punching).

[0163] Furthermore, the above-mentioned method for producing a ceramic component can also be carried out in a spark plasma sintering device or the like in which a pulse current is applied to a raw material.

[0164] Plasma etching device 500

[0165] The plasma etching apparatus 500 according to the embodiment includes the above-described ceramic member 10 at least in a portion thereof.

[0166] Reference Figure 3 In the above plasma etching apparatus 500, the chamber upper assembly 520 and the chamber housing 510 are connected by a connection portion 516, and an electrode plate assembly 524 including an electrode is provided in the chamber upper assembly 520. A substrate holder 530 that can be raised and lowered by a vertical moving device 550 is provided in the chamber housing 510, and a focus ring, i.e., a ceramic component 10, is provided at a position where a wafer 10 to be etched is placed.

[0167] The baffle 564 may be disposed around the substrate support 530 . A shielding ring 562 may be further disposed between the substrate support 530 and the baffle 564 .

[0168] The etching apparatus 500 may use a focus ring or the like as the ceramic member 10 as described above to more efficiently etch the substrate.

[0169] Plasma Etching Method

[0170] The etching method of a substrate according to the embodiment includes: a setting step of positioning an etching object 1 on an etching device provided with a focus ring including the ceramic component 10; and an etching step of etching the etching object to prepare a substrate.

[0171] The setting step is a step of setting the etching object on the etching device, and the etching device is an etching device in which the ceramic component is set as a focus ring. As the etching device, any device for etching a substrate used in electronic products, etc. can be used without limitation, for example, a plasma etching device can be used.

[0172] The substrate may be applied to the etching device as an etching target, and may be, for example, a substrate for a semiconductor device such as a silicon substrate.

[0173] The focus ring and the ceramic component 10 are as described above.

[0174] In the above-mentioned setting step, the above-mentioned etching object can be located on the upper surface 206 of the placement portion of the above-mentioned focusing ring.

[0175] The etching step is a step of preparing a substrate by etching the etching object. The etching can be achieved through a common process applied to the etching process, such as reducing pressure and increasing temperature, supplying plasma gas, etching and cleaning.

[0176] The etching may be performed under the conditions of a chamber pressure of 500 mTorr or less, an etching gas containing a fluorine-containing compound or a chlorine-containing compound, and an electric power of 500 W to 15,000 W. The chamber pressure may be 100 mTorr or less, or may be 10 mTorr or more.

[0177] The electric power may be RF power of 500 W to 15,000 W. The electric power may be RF power of 500 W to 8,000 W.

[0178] The etching time may be 100 hours or more, or may be 200 hours or more. The etching time may be 400 hours or more. The etching time may be 800 hours or more. The etching time may vary depending on the plasma power and etching gas used.

[0179] Hereinafter, the present invention will be described in more detail by specific examples. The following examples are only examples to help understand the present invention, and the scope of the present invention is not limited thereto.

[0180] Example 1 - Preparation of Ceramic Components

[0181] Preparation of disk-shaped boron carbide sintered body using pressure sintering method

[0182] Boron carbide powder (particle size D 50 =0.7 μm), phenolic resin (residual carbon is about 41 wt%) and the like and a solvent were added to a slurry mixer in the content ratio shown in Table 1 below and mixed by ball milling to prepare a slurry raw material. The slurry raw material was spray dried to prepare a granular raw material.

[0183] The granular raw material was filled into a mold, and a disk-shaped boron carbide sintered body having a diameter of about 488 mm was prepared by using the temperature, pressure and time shown in Table 1 below.

[0184] Then, the third heat treatment is performed among the first to third heat treatments as follows.

[0185] As the first heat treatment, the sintered body is heat treated at a temperature of 1400° C. to 1600° C. for 2 hours to 5 hours.

[0186] As the second heat treatment, the sintered body is subjected to a primary treatment at a temperature of 1650° C. to 1950° C. for 2 hours to 3.5 hours, and a secondary treatment at a temperature of 1400° C. to 1600° C. for 3 hours to 6 hours.

[0187] As the third heat treatment, the sintered body is subjected to a primary treatment at a temperature of 1650° C. to 1950° C. for 4 to 6 hours, and a secondary treatment at a temperature of 1400° C. to 1600° C. for 3 to 6 hours.

[0188] Example 2 - Preparation of Ceramic Components

[0189] A boron carbide sintered body was prepared in the same manner as in Example 1, except that raw materials satisfying the content ratio and zeta potential shown in Table 1 and sintering conditions shown in Table 1 were used.

[0190] Example 3 - Preparation of Ceramic Components

[0191] A boron carbide sintered body was prepared in the same manner as in Example 1, except that raw materials satisfying the content ratio and zeta potential shown in Table 1 were used.

[0192] Table 1

[0193]

[0194] * As additive 1, phenolic resin was used, and as additive 2, boron oxide was used.

[0195] Experimental Example - Zeta Potential Measurement of Pulping Raw Materials

[0196] The slurry raw materials of Examples 1 to 3 were diluted with 20 mL of ethanol solvent by 2 to 3 drops, respectively, and divided in a flow cell to measure the zeta potential. The results are shown in Table 1, etc. The temperature of the solvent was 25°C, the refractive index was 1.36, the viscosity was 1.10 cP, and the dielectric constant was 25.

[0197] Experimental Example - Raman Analysis of Sintered Body and Boron Carbide Single Crystal

[0198] Raman analysis was performed using the Raman spectrometer DxR2 from Thermo Scientific under the following measurement conditions. The results are shown in Figures 7 to 16 and Table 2, etc. Figures 7 to 16In the photographs and spectra shown, 1, 2, and 3 represent composite materials, and matrix represents matrix.

[0199] Excitation wavelength: 532nm

[0200] Power: 10mW

[0201] Repetition rate: 6Hz

[0202] Scanning range: 6×6μm

[0203] Pixel size: 2.0μm

[0204] Number of spectrum measurements: 16

[0205] Table 2

[0206] Example 1 Example 2 Example 3 Boron Carbide Single Crystal Composite material Iab / Icd 1.34 - 1.15 - Composite material Ie / If - 1.4 0.81 - Matrix Iab / Icd 1.04 1.09 1.34 0.27

[0207] *Iab / Icd: In Raman shift spectrum, at 481cm -1 The intensity of the peak near Ia is similar to that at 534 cm -1 The sum of the intensities of the peaks near Ib and Iab at 270 cm -1 The intensity of the peak near Ic is similar to that at 320 cm -1 The ratio of the sum of the intensities Id and Icd of the nearby peaks

[0208] *Ie / If: The ratio of the intensity of the G band peak Ie to the intensity of the D band peak If in the Raman shift spectrum

[0209] Refer to Tables 1, 2 and Figures 7 to 16 The shapes of the composite material and the matrix filled while being in contact with the composite material can be confirmed from the cross-sectional photograph of the prepared sintered body, and it can be known that the composite material includes one or more of a carbon-based material and a boron carbide-based material.

[0210] It can be confirmed that the ceramic component according to the embodiment is made of a slurry raw material having a zeta potential of 15 mV or more, and the boron carbide-based material contained in the matrix has the above-mentioned Iab / Icd ratio relative to the boron carbide single crystal of 1 to 1.8, and is formed in a state of contact with the composite material. It can be confirmed that the above-mentioned embodiment has excellent processability and corrosion resistance without generating cracks between the matrix and the composite material.

[0211] As described above, although the preferred embodiments of the present invention have been described in detail, it should be understood that the scope of the present invention is not limited to the above embodiments, but various changes or modifications by those skilled in the art using the basic concepts of the present invention defined in the claims belong to the scope of the present invention.

[0212] Description of Reference Numerals

[0213] 1: Etching Object

[0214] 10: Ceramic parts

[0215] 100: Main body

[0216] 106: Upper surface of the main body

[0217] 150: Inclined part

[0218] 156: Upper surface of inclined portion

[0219] 200: Resettlement Department

[0220] 206: Upper surface of the placement part

[0221] 300: Sintering device

[0222] 310: Sintering furnace

[0223] 320: Heating unit

[0224] 330: Forming mold

[0225] 332: Upper pressure part

[0226] 334: Lower pressure part

[0227] 380: Raw material or sintered body

[0228] 500: Etching device

[0229] 510: Chamber housing

[0230] 516: Connection

[0231] 520: Chamber upper assembly

[0232] 524: Electrode plate assembly

[0233] 530: Substrate support

[0234] 540: Pipeline

[0235] 550: Vertical moving device

[0236] 562: Shielding ring

[0237] 564: Baffle

Claims

1. A ceramic component, which is a ceramic component for a plasma etching device, characterized in that: The above-mentioned ceramic components include: Matrix, A composite material is disposed in the matrix and in contact with the matrix; The specific resistance of the above ceramic component is 10 -1 Ω·cm to 20Ω·cm, The above-mentioned matrix comprises a boron carbide-based material, The composite material comprises one selected from the group consisting of boron carbide-based materials, carbon-based materials and combinations thereof, The size of the composite material is less than 40 μm. The above-mentioned boron carbide-based material is boron carbide, The ceramic component comprises 85% by weight or more of boron carbide relative to the total weight. The boron carbide-based material of the above matrix has a ratio of Iab to Icd of 1.1 to 2.3 in an intensity spectrum measured by Raman spectroscopy, The above Iab is at 481cm -1 The intensity of the peak near Ia is similar to that at 534 cm -1 The sum of the intensities Ib of the nearby peaks, The above Icd is at 270cm -1 The intensity of the peak near Ic is similar to that at 320 cm -1 The sum of the intensities Id of the nearby peaks; The boron carbide-based material of the composite material has a Raman shift spectrum measured by Raman spectroscopy, wherein the ratio of Iab to Icd is 1 to 1.

8. The above Iab is at 481cm -1 The intensity of the peak near Ia is similar to that at 534 cm -1 The sum of the intensities Ib of the nearby peaks, The above Icd is at 270cm -1 The intensity of the peak near Ic is similar to that at 320 cm -1 The sum of the intensities Id of the nearby peaks, The carbon-based material of the composite material has a ratio of Ie to If in a Raman shift spectrum measured by Raman spectroscopy of 0.2 to 2. The above Ie is the intensity of the G band peak, and the above If is the intensity of the D band peak. The average diameter of pores observed on the surface or cross section of the ceramic member is 5 μm or less.

2. The ceramic component according to claim 1, characterized in that The above-mentioned ceramic components include: a seating portion having a first height from the reference surface, and The main body has a second height from the reference surface. The placement portion includes an upper surface of the placement portion for placing the etching object. The main body portion includes a main body portion upper surface directly etched by plasma.

3. The ceramic component according to claim 2, characterized in that An inclined portion is further included between the placement portion and the main body portion. The inclined portion includes an inclined portion upper surface for connecting the upper surface of the placement portion and the upper surface of the main body portion.

4. The ceramic component according to claim 1, characterized in that The ceramic component has a bending strength of 300 MPa or more.

5. The ceramic component according to claim 1, characterized in that The content of the carbon-based material is 0.5 wt % or more relative to the total content of the ceramic component.

6. A ceramic component for a plasma etching device, characterized in that: The above-mentioned ceramic components include: Matrix, and A composite material is disposed in the matrix and in contact with the matrix; The specific resistance of the above ceramic component is 10 -2 Ω·cm to 10 -1 Ω·cm, The above-mentioned matrix comprises a boron carbide-based material, The composite material comprises one selected from the group consisting of boron carbide-based materials, boron oxide and combinations thereof, The size of the composite material is less than 40 μm. The above-mentioned boron carbide-based material is boron carbide, The ceramic component comprises 85 wt % or more of boron carbide relative to the total weight, and the boron carbide-based material of the composite material has a ratio of Iab to Icd of 1 to 1.8 in a Raman shift spectrum measured by Raman spectroscopy, The above Iab is at 481cm -1 The intensity of the peak near Ia is similar to that at 534 cm -1 The sum of the intensities Ib of the nearby peaks, The above Icd is at 270cm -1 The intensity of the peak near Ic is similar to that at 320 cm -1 The sum of the intensities Id of the nearby peaks, The average diameter of pores observed on the surface or cross section of the ceramic member is 5 μm or less.

7. A method for preparing a ceramic component for use in a plasma etching device, characterized in that: The method for preparing the ceramic component used in the plasma etching device comprises: a preparation step of preparing a raw material comprising boron carbide and an additive, and a processing step of preparing a ceramic component by sintering and shaping the above raw materials; The preparation step includes a process of preparing raw material particles by pulping and granulating the raw material. The additive is present in an amount of 0.1 wt % to 30 wt % relative to the raw material, and the boron carbide is contained as a remainder other than the additive. The additive is one or more selected from the group consisting of carbon-based materials, boron oxide, silicon, silicon carbide, silicon oxide, boron nitride, silicon nitride and combinations thereof. The zeta potential of the slurried raw material is greater than or equal to +15 mV and less than or equal to +40 mV. The sintering is performed at a temperature of 1800° C. to 2500° C., the obtained sintered body is subjected to a primary treatment at a temperature of 1650° C. to 1950° C. for 4 to 6 hours, and a secondary treatment at a temperature of 1400° C. to 1600° C. for 3 to 6 hours, The ceramic component comprises 85% by weight or more of boron carbide relative to the total weight. Wherein, the carbon-based material is phenolic resin or novolac resin.

8. A plasma etching device, characterized in that: Comprising the ceramic component according to claim 1.

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