Substrate processing apparatus, method for manufacturing semiconductor device, and program

Abstract

The invention provides a technology capable of improving the uniformity of substrate processing. The present invention is provided with: a processing chamber for processing a substrate; a process gas supply unit that supplies a process gas to the process chamber; a heating unit capable of heating the processing chamber; a heat-insulating chamber that constitutes a heat-insulating region provided below the processing chamber; an inert gas supply unit capable of supplying an inert gas to the heat-insulated chamber from below; a first exhaust part provided with a first exhaust pipe connected between the inert gas supply part and the processing chamber in the vertical direction and on the side of the heat insulation chamber; and a second exhaust unit provided with a second exhaust pipe connected to the processing chamber.

Description

Technical Field

[0001] The present invention relates to a substrate processing device, a method for manufacturing a semiconductor device, and a program. Background Art

[0002] Patent Document 1 discloses a substrate processing apparatus using a reaction tube that supplies a processing gas to a substrate from a horizontal direction and exhausts the gas from the horizontal direction.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2008-172204 Summary of the invention

[0006] Problems to be solved by the invention

[0007] In the above-mentioned apparatus, when the purge gas is supplied to the periphery of the rotation axis below the processing chamber, the purge gas may flow into the processing chamber from the bottom of the processing chamber, which may deteriorate the uniformity of substrate processing.

[0008] The present invention provides a technology capable of improving the uniformity of substrate processing.

[0009] Solutions to Solve Problems

[0010] According to one embodiment of the present invention, a technology is provided, which has:

[0011] A processing chamber for processing a substrate;

[0012] a processing gas supply unit for supplying processing gas to the processing chamber;

[0013] A heating unit capable of heating the processing chamber;

[0014] an insulating chamber constituting an insulating area disposed below the processing chamber;

[0015] an inert gas supply unit capable of supplying inert gas to the heat insulation chamber from below;

[0016] A first exhaust unit including a first exhaust pipe connected between the inert gas supply unit and the processing chamber in a vertical direction and on a side of the heat insulation chamber; and

[0017] The second exhaust unit includes a second exhaust pipe connected to the processing chamber.

[0018] Effects of the Invention

[0019] According to the present invention, the uniformity of substrate processing can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 It is a schematic longitudinal sectional view showing a substrate processing apparatus according to one embodiment of the present invention.

[0021] Figure 2 (A) is an explanatory diagram showing a first gas supply unit according to one embodiment of the present invention. (B) is an explanatory diagram showing a second gas supply unit according to one embodiment of the present invention. (C) is an explanatory diagram showing an inert gas supply unit according to one embodiment of the present invention.

[0022] Figure 3 This is an explanatory diagram for explaining details of the heat insulating room and the surrounding area of ​​the heat insulating portion according to one aspect of the present invention.

[0023] Figure 4 This is a schematic configuration diagram of a controller of a substrate processing apparatus according to one embodiment of the present invention, and is a diagram showing a control system of the controller using a block diagram.

[0024] Figure 5 This is a flowchart illustrating a substrate processing flow according to one embodiment of the present invention.

[0025] Figure 6 Yes Description Figure 5 Flow chart of the membrane treatment process. DETAILED DESCRIPTION

[0026] Below, while referring to Figure 1 to Figure 6 In addition, the drawings used in the following description are all conceptual drawings, and the relationship between the sizes of the elements and the proportions of the elements shown in the drawings may not be consistent with the actual structure. In addition, the relationship between the sizes of the elements and the proportions of the elements may not be consistent between multiple drawings.

[0027] (1) Structure of substrate processing apparatus

[0028] use Figure 1 , the structure of the substrate processing apparatus 10 is described.

[0029] The substrate processing apparatus 10 includes a reaction tube housing chamber 206, and a cylindrical reaction tube 210 extending in the vertical direction is provided in the reaction tube housing chamber 206, a heater 211 as a heating unit (furnace body) provided on the outer periphery of the reaction tube 210, a gas supply structure 212 as a processing gas supply unit, and a gas exhaust structure 213 as a processing gas exhaust unit. The processing gas supply unit may also include an upstream side rectifying unit 214 and nozzles 223 and 224 described later. In addition, the processing gas exhaust unit may also include a downstream side rectifying unit 215 described later.

[0030] The gas supply structure 212 is disposed on the side of the reaction tube 210 and upstream in the gas flow direction. Gas is supplied from the gas supply structure 212 to the reaction tube 210, that is, the processing chamber 201, and gas is supplied to the substrate S from the horizontal direction. The gas exhaust structure 213 is disposed on the side of the reaction tube 210 and downstream in the gas flow direction. The gas in the reaction tube 210 is exhausted from the gas exhaust structure 213. The gas exhaust structure 213 is arranged to be opposite to the gas supply structure 212 across the reaction tube 210.

[0031] The processing chamber 201 includes a reaction tube 210 into which a substrate S is carried, a gas supply structure 212, and a gas exhaust structure 213. The substrate S is processed in the processing chamber 201. The gas supply structure 212, the interior of the reaction tube 210, and the gas exhaust structure 213 are connected in the horizontal direction.

[0032] An upstream rectifying section 214 for rectifying the flow of gas supplied from the gas supply structure 212 is provided on the upstream side of the reaction tube 210 between the reaction tube 210 and the gas supply structure 212. In addition, a downstream rectifying section 215 for rectifying the flow of gas exhausted from the reaction tube 210 is provided on the downstream side of the reaction tube 210 between the reaction tube 210 and the gas exhaust structure 213. The lower end of the reaction tube 210 is supported by a manifold 216.

[0033] The reaction tube 210, the upstream rectifying section 214, and the downstream rectifying section 215 are continuous structures and are formed of materials such as quartz or SiC. They are composed of heat-transmitting components that transmit the heat radiated from the heater 211. The heat of the heater 211 heats the substrate S and the gas. In addition, the heater 211 is arranged on the side of the processing chamber 201 and is configured to heat the processing chamber 201.

[0034] A gas supply pipe 251 and a gas supply pipe 261 are connected to the gas supply structure 212. In addition, the gas supply structure 212 has a distribution unit 125 for distributing the gas supplied from each gas supply pipe. A nozzle 223 and a nozzle 224 are provided on the downstream side of the distribution unit 125. A plurality of nozzles 223 and 224 are respectively connected to the downstream sides of the gas supply pipe 251 and the gas supply pipe 261 via the distribution unit 125. The nozzles 223 and the nozzles 224 are arranged in a substantially horizontal manner. In addition, a plurality of these nozzles 223 and 224 are arranged in the vertical direction, and are respectively arranged at positions corresponding to the substrate S. When the substrate S is present in the processing chamber 201, the processing gas is supplied from the side of the substrate S.

[0035] The distribution unit 125 is configured to supply respective gases from the gas supply pipe 251 to the plurality of nozzles 223 and from the gas supply pipe 261 to the plurality of nozzles 224. For example, a gas flow path is configured according to a combination of each gas supply pipe and the nozzle. By configuring in this way, the gases supplied from the gas supply pipes are not mixed, thereby suppressing the generation of reaction byproducts (also referred to as particles) that may be generated by mixing the gases in the distribution unit 125.

[0036] The upstream side rectifying section 214 has a box body 227 and a dividing plate 226. The dividing plate 226 extends in the horizontal direction. The so-called horizontal direction here means the side wall direction of the box body 227. A plurality of dividing plates 226 are arranged in the vertical direction. The dividing plate 226 is fixed to the side wall of the box body 227, and is configured so that the gas does not move to the adjacent area below or above the dividing plate 226. By setting it not to cross the dividing plate 226, the gas flow described later can be reliably formed.

[0037] The partition plates 226 extend in the horizontal direction and have a continuous structure without holes. Each partition plate 226 is provided at a position corresponding to each substrate S. Nozzles 223 and 224 are arranged between the partition plates 226 or between the partition plates 226 and the box 227 .

[0038] The gas ejected from the nozzles 223 and 224 is supplied to the surface of the substrate S. That is, if viewed from the substrate S, the gas is supplied from the lateral direction of the substrate S. The partition plate 226 extends in the horizontal direction and is a continuous structure without holes, so the movement of the main flow of the gas in the vertical direction is suppressed and moves in the horizontal direction. Therefore, the pressure loss of the gas reaching each substrate S can be made uniform in the vertical direction.

[0039] The downstream side rectifying part 215 is configured such that the ceiling is higher than the uppermost substrate S and the bottom is lower than the lowermost substrate S arranged on the substrate support 300 when the substrate S is supported on the substrate support 300 described later. The substrate support 300 is used as a substrate holding part for holding the substrate S.

[0040] The downstream side rectifying section 215 has a box body 231 and a dividing plate 232. The dividing plate 232 extends in the horizontal direction. The so-called horizontal direction here means the side wall direction of the box body 231. Moreover, a plurality of dividing plates 232 are arranged in the vertical direction. The dividing plate 232 is fixed to the side wall of the box body 231, and is configured so that the gas does not pass over the dividing plate 232 and move to the adjacent area below or above. By setting it so that it does not pass over the dividing plate 232, the gas flow described later can be reliably formed.

[0041] The upstream rectifying section 214 is connected to the space of the downstream rectifying section 215 via the processing chamber 201. The ceiling of the box 227 is configured at the same height as the ceiling of the box 231. In addition, the bottom of the box 227 is configured to be higher than the bottom of the box 231. In other words, the bottom of the box 231 is configured to be lower than the bottom of the box 227, and the space of the downstream rectifying section 215 is configured to be larger than the space of the upstream rectifying section 214.

[0042] The space of the downstream rectifying section 215 includes a region 450a having the same width as the space of the upstream rectifying section 214 and a region 450b formed below the region 450a. The region 450b is disposed below the bottom surface of the bottommost substrate S among the plurality of substrates S stacked on the substrate support 300 when the substrate support 300 is loaded into the processing chamber 201.

[0043] The dividing plate 232 extends in the horizontal direction and is a continuous structure without holes. The dividing plate 232 is set at positions corresponding to the substrate S and respectively corresponding to the dividing plate 226. The corresponding dividing plate 226 and dividing plate 232 are preferably set to the same height. Furthermore, it is preferred that when the substrate S is processed, the height of the substrate S is consistent with the height of the dividing plate 226 and the dividing plate 232. By adopting such a structure, the gas supplied from each nozzle forms a horizontal flow passing through the substrate S and the dividing plate 232 as shown by the arrows in the figure. By setting the dividing plate 232 to such a structure, the pressure loss of the gas discharged from each substrate S can be made uniform. Thus, the gas flow of the gas passing through each substrate S is formed in a horizontal direction toward the gas exhaust structure 213 while suppressing the flow in the vertical direction.

[0044] By providing the partitioning plates 226 and 232, the pressure loss can be made uniform in the vertical direction upstream and downstream of each substrate S. Thus, a horizontal gas flow in which the flow in the vertical direction is suppressed can be reliably formed covering the partitioning plates 226, the substrate S, and the partitioning plates 232.

[0045] The gas exhaust structure 213 is disposed downstream of the downstream rectifying section 215. The gas exhaust structure 213 is mainly composed of a box body 241 and an exhaust hole 244. The exhaust hole 244 is formed on the lower side or in the horizontal direction of the downstream side of the box body 241. A second exhaust pipe 281 is connected to the processing chamber 201 via the exhaust hole 244.

[0046] The gas exhaust structure 213 is connected to the space of the downstream side rectifying section 215. The box 231 and the box 241 are highly continuous structures. The ceiling of the box 231 is configured to be at the same height as the ceiling of the box 241, and the bottom of the box 231 is configured to be at the same height as the bottom of the box 241. The gas exhaust structure 213 has a region 452a adjacent to the region 450a of the downstream side rectifying section 215 and a region 452b adjacent to the region 450b of the downstream side rectifying section 215 and arranged below the region 452a.

[0047] The gas exhaust structure 213 is provided in the lateral direction of the reaction tube 210 , and is a lateral exhaust structure for exhausting gas from the lateral direction of the substrate S.

[0048] The first region is formed by the region 450a of the downstream rectifying portion 215 and the region 452a of the gas exhaust structure 213. The second region is formed by the region 450b of the downstream rectifying portion 215 and the region 452b of the gas exhaust structure 213. The processing chamber 201 includes a processing region A for processing the substrate S and a heat insulating chamber 505 located below the processing region A and forming a heat insulating region B where the heat insulating portion 502 is arranged when the substrate support member 300 is carried into the processing chamber 201. The first region is adjacent to the processing region A in the horizontal direction.

[0049] Thermocouples 500 can be provided in the region 450b or the region 452b as the second region. By providing the second region, it is possible to suppress the inert gas supplied to the heat insulating portion 502 or the ambient gas (including reaction byproducts) of the heat insulating chamber 505 from flowing into the processing region A. The gas flow of the gas passing through each substrate S is formed in the horizontal direction toward the gas exhaust structure 213 while suppressing the flow in the vertical direction.

[0050] That is, the gas having passed through the downstream side rectifying section 215 is exhausted from the exhaust hole 244. At this time, since the gas exhaust structure 213 does not have a structure such as a partition plate, a gas flow including a vertical direction is formed toward the exhaust hole 244.

[0051] The substrate support 300 includes a partition plate support portion 310 and a base portion 311, and is accommodated in the reaction tube 210. A substrate S is disposed directly below the inner wall of the top plate of the reaction tube 210. The substrate support 300 transfers the substrate S through a substrate transfer port (not shown) in the transfer chamber 217 by a vacuum transfer robot, or transfers the transferred substrate S to the inside of the reaction tube 210 to form a thin film on the surface of the substrate S. The substrate transfer port is provided, for example, at the side wall of the transfer chamber 217.

[0052] A plurality of disk-shaped partition plates 314 are fixed at a predetermined interval to the partition plate support portion 310. Moreover, substrates S are supported at predetermined intervals between the partition plates 314. The partition plates 314 are arranged directly below the substrates S and are arranged at either or both of the upper and lower parts of the substrates S. The partition plates 314 cut off the space between the substrates S.

[0053] A plurality of substrates S are stacked and placed at predetermined intervals in the vertical direction on the substrate support 300. The predetermined intervals between the plurality of substrates S placed on the substrate support 300 are the same as the upper and lower intervals of the partition plates 314 fixed to the partition plate support portion 310. In addition, the diameter of the partition plates 314 is formed to be larger than the diameter of the substrates S.

[0054] The substrate support 300 supports a plurality of, for example, five, substrates S in multiple layers in the vertical direction (perpendicular direction). In addition, an example in which five substrates S are supported by the substrate support 300 is shown here, but the present invention is not limited thereto. For example, the substrate support 300 may be configured to support about 5 to 50 substrates S. In addition, the partition plate 314 of the partition plate support portion 310 is also referred to as a partition plate.

[0055] The substrate support 300 is driven by the vertical driving mechanism 400 in the vertical direction between the reaction tube 210 and the transfer chamber 217 and in the rotation direction around the center of the substrate S supported by the substrate support 300 .

[0056] A heat insulating portion 502, which will be described in detail later, is provided below the substrate support 300. A cylindrical heat insulating chamber 505 is formed in the processing chamber 201 of the reaction tube 210. The heat insulating chamber 505 is a structure for accommodating the heat insulating portion 502 when the substrate support 300 is moved into the reaction tube 210. The heat insulating chamber 505 is formed in a cylindrical shape, and is configured so that the outer wall of the heat insulating portion 502 and the inner wall of the heat insulating chamber 505 are kept at a constant distance when the substrate support 300 is moved into the reaction tube 210. An exhaust hole 503 is formed on the side of the heat insulating chamber 505. A first exhaust pipe 504 for exhausting the atmosphere in the heat insulating region is connected to the heat insulating chamber 505 in a manner communicating with the exhaust hole 503.

[0057] The transfer chamber 217 is provided at the lower part of the reaction tube 210 via the manifold 216. In the transfer chamber 217, the following operations are performed: the substrate S is placed (mounted) on the substrate support (hereinafter sometimes referred to as a wafer boat) 300 via the substrate carrying-in port by a vacuum transfer robot, or the substrate S is taken out from the substrate support 300 by the vacuum transfer robot.

[0058] The transfer chamber 217 can accommodate a vertical driving mechanism 400, which constitutes a first driving unit for driving the substrate support 300 in the vertical direction and the rotational direction. Figure 1 4 shows a state where the substrate support 300 is lifted by the vertical direction driving mechanism 400 and is accommodated in the reaction tube 210. In addition, when the substrate support 300 is accommodated in the reaction tube 210, a heat insulating portion 502 is arranged below the reaction tube 210 to form a heat insulating chamber 505. That is, the heat insulating portion 502 is configured to form a heat insulating region B provided below the processing chamber 201. Thus, the heat conduction from the processing chamber 201 to the transfer chamber 217 is reduced.

[0059] The vertical driving mechanism 400 constituting the first driving unit includes a vertical driving motor 410, a rotation driving motor 430, and a boat vertical mechanism 420 as driving sources. The boat vertical mechanism 420 includes a linear actuator as a substrate support lifting mechanism for driving the substrate support 300 in the vertical direction.

[0060] The up-and-down driving motor 410 as the lifting mechanism of the partition plate support part rotates and drives the ball screw 411, thereby causing the nut 412 threadedly engaged with the ball screw 411 to move up and down along the ball screw 411. As a result, the partition plate support part 310 and the substrate support 300 are driven in the up-and-down direction between the reaction tube 210 and the transfer chamber 217 together with the base plate 402 to which the nut 412 is fixed. The base plate 402 is also fixed to the ball guide 415 engaged with the guide shaft 414, and has a structure that can smoothly move in the up-and-down direction along the guide shaft 414. The upper end and the lower end of the ball screw 411 and the guide shaft 414 are fixed to the fixing plates 413 and 416, respectively.

[0061] The rotation driving motor 430 and the boat vertical mechanism 420 including a linear actuator constitute a second driving unit, and are fixed to a base flange 401 as a cover body supported on a base plate 402 by a side plate 403 .

[0062] The rotation driving motor 430 drives the rotation transmission belt 432 engaged with the tooth portion 431 installed at the front end portion, and rotationally drives the support member 440 engaged with the rotation transmission belt 432. The support member 440 supports the partition plate support portion 310 via the base portion 311, and is driven by the rotation driving motor 430 via the rotation transmission belt 432, thereby rotating the partition plate support portion 310 and the substrate support member 300.

[0063] The boat up-and-down mechanism 420 having a linear actuator drives the shaft 421 in the up-and-down direction. A plate 422 is mounted on the front end of the shaft 421. The plate 422 is connected to a support portion 441 fixed to the substrate support member 300 via a bearing 423. By connecting the support portion 441 to the plate 422 via the bearing 423, when the partition plate support member 310 is rotationally driven by the rotation driving motor 430, the substrate support member 300 can also rotate together with the partition plate support member 310.

[0064] On the other hand, the support portion 441 is supported by the support member 440 via the linear guide bearing 442. With such a structure, when the shaft 421 is driven in the vertical direction by the boat vertical mechanism 420 having a linear actuator, the support portion 441 fixed to the substrate support member 300 can be driven in the vertical direction relative to the support member 440 fixed to the partition plate support portion 310.

[0065] An annular space is formed between the support portion 441 and the support member 440. A gas supply pipe 271 is connected to the annular space below the heat insulating portion 502. An inert gas is supplied from the gas supply pipe 271, and the inert gas is supplied to the heat insulating portion 502 from below.

[0066] An O-ring 446 for vacuum sealing is provided on the upper surface of the base flange 401 as a cover. Figure 1 As shown, the upper surface of the base flange 401 driven by the vertical driving motor 410 is raised to a position where it contacts the transfer chamber 217 , so that the interior of the reaction tube 210 can be kept airtight.

[0067] Next, the details of the gas supply unit will be described using the second figure.

[0068] like Figure 2 As recorded in (A), in the gas supply pipe 251, from the upstream direction, there are arranged in sequence a first gas source 252, a mass flow controller (MFC) 253 as a flow controller (flow control unit), a valve 254 as an opening and closing valve, a tank 259 as a storage unit for storing gas, and a valve 275.

[0069] The first gas source 252 is a source of a first gas containing a first element (also referred to as a "first element-containing gas"). The first gas is a raw material gas, that is, one of the process gases.

[0070] The first gas supply unit 250 (also referred to as a silicon-containing gas supply unit) is mainly composed of the gas supply pipe 251 , the MFC 253 , the valve 254 , the tank 259 , and the valve 275 . The first gas supply unit 250 may include the first gas source 252 .

[0071] A gas supply pipe 255 is connected to the downstream side of the valve 254 in the gas supply pipe 251 and the upstream side of the tank 259. The gas supply pipe 255 is provided with an inert gas source 256, an MFC 257, and a valve 258 in order from the upstream direction. An inert gas, such as nitrogen (N2) gas, is supplied from the inert gas source 256.

[0072] The first inert gas supply unit is mainly composed of the gas supply pipe 255, the MFC 257, and the valve 258. The inert gas supplied from the inert gas source 256 functions as a purge gas for purging the gas retained in the reaction tube 210 during the substrate processing step. The inert gas source 256 may be included in the first inert gas supply unit. The first inert gas supply unit may also be added to the first gas supply unit 250.

[0073] like Figure 2 As described in (B), the gas supply pipe 261 is provided with a second gas source 262, an MFC 263, and a valve 264 in order from the upstream direction.

[0074] The second gas source 262 is a source of a second gas containing a second element (hereinafter, also referred to as "second element-containing gas"). The second element-containing gas is one of the processing gases. In addition, the second gas can also be regarded as a reaction gas or a modified gas.

[0075] The second gas supply unit 260 is mainly composed of the gas supply pipe 261, the MFC 263, and the valve 264. The second gas supply unit 260 may include the second gas source 262.

[0076] A gas supply pipe 265 is connected to the downstream side of the valve 264 in the gas supply pipe 261. The gas supply pipe 265 is provided with an inert gas source 266, an MFC 267, and a valve 268 in order from the upstream direction. The inert gas source 266 supplies an inert gas, for example, N2 gas.

[0077] The second inert gas supply unit is mainly composed of the gas supply pipe 265, the MFC 267, and the valve 268. The inert gas supplied from the inert gas source 266 acts as a purge gas for purging the gas retained in the reaction tube 210 during the substrate processing step. The inert gas source 266 may be included in the second inert gas supply unit. The second inert gas supply unit may also be added to the second gas supply unit 260.

[0078] like Figure 2 As shown in (C), the gas supply pipe 271 is provided with an inert gas source 272, an MFC 273, and a valve 274 in this order from the upstream direction. The inert gas source 272 supplies an inert gas, for example, N2 gas.

[0079] The inert gas supply unit 270 is mainly composed of the gas supply pipe 271, the MFC 273, and the valve 274. The inert gas supplied from the inert gas source 272 functions as a purge gas capable of purging the insulating chamber 505 constituting the insulating area disposed below the processing chamber 201 in the state where the substrate support member 300 is carried into the processing chamber 201 during the substrate processing step. The inert gas source 272 may be included in the inert gas supply unit 270.

[0080] Next, the exhaust portion will be described.

[0081] The second exhaust pipe 281 is connected to a vacuum pump 284 as a vacuum exhaust device via a valve 282 and an APC (AutoPressure Controller) valve 283 as a pressure regulator (pressure adjustment unit), and is configured to be able to perform vacuum exhaust so that the pressure in the reaction tube 210 becomes a predetermined pressure (vacuum degree).

[0082] The second exhaust section 280 is constituted by the second exhaust pipe 281, the valve 282, and the APC valve 283. In addition, the vacuum pump 284 may be included in the second exhaust section 280. That is, the second exhaust section 280 has the second exhaust pipe 281 connected to the processing chamber 201 of the reaction tube 210, and is configured to exhaust the atmosphere of the processing chamber 201 through the second exhaust pipe 281. The second exhaust section 280 is configured to be able to exhaust the processing gas from the direction opposite to the side where the processing gas is supplied.

[0083] The first exhaust pipe 504 is composed of an upstream pipe 504a and a downstream pipe 504b. The pipe 504b is provided with a valve 506. The downstream end of the pipe 504b is connected to the upstream side of the valve 282 of the second exhaust pipe 281, that is, the confluence portion. That is, the first exhaust pipe 504 is connected in such a way that the valve 282 is arranged on the downstream side of the confluence portion on the second exhaust pipe 281. Thus, compared with the case where the first exhaust pipe 504 is connected to the downstream side of the valve 282, the control parameter can be reduced.

[0084] In addition, the inner diameter of the pipe 504a is larger than the inner diameter of the downstream pipe 504b. By making the inner diameter of the downstream pipe 504b smaller than the upstream pipe 504a, a valve such as a butterfly valve for adjusting the flow rate of gas can be cheaply installed in the pipe 504b.

[0085] The heat-insulating chamber 505 is formed below the processing chamber 201 when the substrate support 300 is moved into the reaction tube 210. In addition, the first exhaust pipe 504 is connected between the inert gas supply unit 270 and the processing chamber 201 in the vertical direction and on the side of the heat-insulating chamber 505. The connection portion of the first exhaust pipe 504 is also on the side of the heat-insulating unit 502 when the substrate support 300 is moved into the processing chamber 201. Thus, the inert gas supplied from the bottom to the heat-insulating chamber 505 can flow in the heat-insulating region B (i.e., the region inside the heat-insulating chamber 505) and be exhausted from the side of the heat-insulating chamber 505.

[0086] That is, the process gas supplied to the process area A is discharged through the second exhaust pipe 281, and the inert gas supplied to the heat insulating area B is discharged through the first exhaust pipe 504, and the two are separated from each other. Thus, the heat insulating area B can be purged with the inert gas to suppress the adhesion of reaction by-products, while the influence of the inert gas on the process area A can be suppressed.

[0087] In addition, the first exhaust pipe 504 is arranged below the heater 211. Therefore, the first exhaust pipe 504 does not hinder heating and the space utilization efficiency is improved. In addition, the heater 211 can be adjacent to the substrates S stacked from the bottom layer to the top layer, and as a result, the plurality of substrates S can be uniformly heated.

[0088] The first exhaust unit 508 is composed of the pipes 504a, 504b and the valve 506. The first exhaust unit 508 has the first exhaust pipe 504 connected to the insulation region B of the reaction tube 210 and exhausts the inert gas supplied to the insulation region B and the atmosphere of the insulation region B.

[0089] The inner diameter of the first exhaust pipe 504 is smaller than the inner diameter of the second exhaust pipe 281. The conductivity of the first exhaust pipe 504 is smaller than the conductivity of the second exhaust pipe 281. The conductivity ratio between the first exhaust pipe 504 and the second exhaust pipe 281 is, for example, about 1:500.

[0090] Thus, in the substrate processing step, even in the case of flash supply in which a large amount of processing gas is temporarily supplied to the substrate S, the large amount of gas supplied to the substrate S can be exhausted through the second exhaust pipe 281. In addition, by reducing the conductivity of the first exhaust pipe 504, the processing gas supplied to the processing chamber 201 can be prevented from flowing into the insulation area B.

[0091] Next, use Figure 3 , details of the insulation chamber 505 and the surrounding area of ​​the insulation part 502 are described.

[0092] The heat insulating part 502 is composed of a heat insulating box body 510 and a plurality of heat insulating plates 512 as heat insulating components. The heat insulating box body 510 is in a cylindrical shape having an upper surface and a side surface. In addition, a support part 441 for supporting the substrate support member 300 is fixed through the center of the upper surface of the heat insulating box body 510. The support member 440 and a plurality of heat insulating plates 512 stacked approximately horizontally in the vertical direction relative to the support member 440 are accommodated in the heat insulating box body 510. The heat insulating box body 510 is configured to cover the upper part of the support member 440. The support part 441 contains a metal component.

[0093] The heat insulating plate 512 is made of a heat-resistant material such as quartz or SiC. Thus, it is difficult for the heat from the processing chamber 201 to be conducted to the transfer chamber 217. In addition, it is not limited to a plurality of heat insulating plates 512, and a heat insulating tube made of a heat-resistant material such as quartz or SiC may be configured as a heat insulating member.

[0094] An annular space is formed between the support portion 441 and the support member 440. The annular space is used as an inert gas flow path 507 through which an inert gas flows. The gas supply pipe 271 is connected to the inert gas flow path 507. The inert gas supplied from the gas supply pipe 271 is supplied into the heat-insulating box 510 via the inert gas flow path 507, flows from the bottom of the heat-insulating box 510 to the outside of the heat-insulating box 510, and is exhausted from the first exhaust portion 508 via the upper surface of the base flange 401, the space between the outer surface of the heat-insulating box 510 and the reaction tube 210, i.e., the inert gas flow path 509, and the exhaust hole 503. That is, the inert gas supplied from the gas supply pipe 271 purges the heat-insulating region B, i.e., the heat-insulating chamber 505, and is exhausted from the first exhaust portion 508. Thus, when the support portion 441 is made of a metal component, the metal component precipitated from the support portion 441 due to the influence of heat or the like is exhausted from the first exhaust portion 508. That is, it is possible to suppress the metal component from intruding into the processing chamber 201.

[0095] Next, use Figure 4 , a controller as a control unit (control means) will be described. The substrate processing apparatus 10 includes a controller 600 that controls the operation of each unit of the substrate processing apparatus 10 .

[0096] Figure 4600 is schematically shown. The controller 600 is configured as a computer including a CPU (Central Processing Unit) 601, a RAM (Random Access Memory) 602, a storage device 603 as a storage unit, and an I / O port 604. The RAM 602, the storage device 603, and the I / O port 604 are configured to be able to exchange data with the CPU 601 via an internal bus 605. The transmission / reception of data within the substrate processing apparatus 10 is performed based on the instruction of the transmission / reception instruction unit 606 which is a function of the CPU 601.

[0097] The controller 600 is provided with a network transmission / reception unit 683 connected to the host device 670 via a network. The network transmission / reception unit 683 can receive information on the processing history of the substrates S accommodated in the wafer boat, scheduled processing, and the like from the host device 670 .

[0098] The storage device 603 is composed of, for example, a flash memory, a HDD (Hard Disk Drive), etc. The storage device 603 stores processing conditions according to the type of substrate processing. That is, the storage device 603 stores a control program for controlling the operation of the substrate processing device 10, a process recipe recording the steps or conditions of the substrate processing, etc. in a readable manner.

[0099] In addition, the process recipe combines the steps in the substrate processing process described later in such a way that the controller 600 can execute and obtain a predetermined result, and acts as a program. Hereinafter, the process recipe, control program, etc. are also collectively referred to as a program. In addition, the term "program" is used in this specification, including only the process recipe alone, only the control program alone, or both. In addition, the RAM 602 is configured as a storage area (work area) for temporarily holding programs or data read by the CPU 601.

[0100] The I / O port 604 is connected to each component of the substrate processing apparatus 10 .

[0101] The CPU 601 is configured to read out a control program from the storage device 603 and execute it, and to read out a process recipe from the storage device 603 according to the input of an operation instruction from the input / output device 681. Moreover, the CPU 601 is configured to be able to control the substrate processing apparatus 10 according to the content of the read process recipe. In addition, the CPU 601 is configured to be able to set the supply amount of the inert gas supplied to the heat-insulating chamber 505 according to the type of substrate processing. In addition, the CPU 601 can control the first exhaust section 508 connected to the heat-insulating chamber 505 and the second exhaust section 280 connected to the processing area A according to the type and condition of the substrate processing.

[0102] CPU601 has a sending / receiving instruction unit 606. The controller 600 can install the program on a computer or the like by using an external storage device (for example, a disk such as a hard disk, an optical disk such as a DVD, an optical disk such as an MO, a semiconductor memory such as a USB memory) 682 storing the above-mentioned program to constitute the controller 600 of this method. In addition, the mechanism for supplying the program to the computer is not limited to the case of supplying the program via the external storage device 682. For example, the program can also be supplied using communication means such as the Internet or a dedicated line without supplying the program via the external storage device 682. In addition, the storage device 603 and the external storage device 682 are configured as a computer-readable storage medium. Hereinafter, they are collectively referred to as storage media. In addition, in this specification, the case where the term "storage medium" is used includes a case where only the storage device 603 is included, a case where only the external storage device 682 is included, or a case where both are included.

[0103] (2) Substrate processing steps

[0104] Next, as one of the semiconductor manufacturing processes, a process of forming a thin film on a substrate S using the substrate processing apparatus 10 having the above-described structure will be described. In the following description, the operations of the various components constituting the substrate processing apparatus 10 are controlled by the controller 600 .

[0105] Here, in the film forming process in which a film is formed on the substrate S by alternately supplying the first gas and the second gas as the process gas, the Figure 5 as well as Figure 6 Provide explanation.

[0106] The term "substrate" used in this specification sometimes refers to the substrate itself, and sometimes refers to a laminate of a substrate and a predetermined layer or film formed on the surface thereof. The term "surface of a substrate" used in this specification sometimes refers to the surface of the substrate itself, and sometimes refers to the surface of a predetermined layer, etc., formed on the substrate. In this specification, the phrase "forming a predetermined layer on a substrate" sometimes refers to directly forming a predetermined layer on the surface of the substrate itself, and sometimes refers to forming a predetermined layer on a layer, etc., formed on the substrate. The use of the term "substrate" in this specification is the same as the use of the term "wafer".

[0107] (S10)

[0108] The transfer chamber pressure adjustment step S10 is described below. Here, the pressure in the transfer chamber 217 is set to the same level as the pressure in the vacuum transfer chamber (not shown) adjacent to the transfer chamber 217.

[0109] (S11)

[0110] Next, the substrate carrying-in step S11 will be described.

[0111] When the transfer chamber 217 reaches the vacuum level, the substrate S is started to be transferred. When the substrate S reaches the vacuum transfer chamber, the gate valve is opened, and the vacuum transfer robot transfers the substrate S into the transfer chamber 217 .

[0112] At this time, the substrate support 300 is on standby in the transfer chamber 217, and the substrate S is transferred to the substrate support 300. After a predetermined number of substrates S are transferred to the substrate support 300, the vacuum transfer robot is retracted, and the substrate support 300 is raised by the vertical direction driving mechanism 400 to move the substrate S into the reaction tube 210, that is, into the processing chamber 201. A plurality of substrates S are moved into the processing chamber 201 in a state of being stacked in the vertical direction.

[0113] During the movement to the reaction tube 210 , the substrate S is positioned so that the surface of the substrate S coincides with the heights of the partition plates 226 and 232 .

[0114] (S12)

[0115] Next, the heating step S12 will be described.

[0116] After the substrate S is loaded into the reaction tube 210 , that is, the processing chamber 201 , the pressure in the reaction tube 210 is controlled to be a predetermined pressure, and the surface temperature of the substrate S is controlled to be a predetermined temperature. The heater 211 is configured to be adjacent to the plurality of substrates S.

[0117] (S13)

[0118] Next, the film processing step S13 is described. In the film processing step S13, according to the process recipe, the substrate S is stacked on the substrate support 300 and the substrate S is accommodated in the processing chamber, and the following steps are performed on the substrate S.

[0119] <First gas supply, step S100>

[0120] First, the first gas is supplied to the reaction tube 210 in a flash. Specifically, the valve 275 is opened, and the first gas is supplied to the gas supply pipe 251 from the tank 259 in which the first gas is stored in advance. After a predetermined time, the valve 275 is closed to stop the supply of the first gas to the gas supply pipe 251. The first gas is supplied to the reaction tube 210 in large quantities at one time from the gas supply structure 212 via the distribution part 125 and the nozzle 223 via the upstream side rectifying part 214, and is discharged via the space on the substrate S, the downstream side rectifying part 215, the gas exhaust structure 213, and the second exhaust pipe 281. Here, during the supply of the first gas to the processing chamber 201, the valve 254 may be in an open state or a closed state. In addition, the valve 258 may be opened, and an inert gas such as N2 gas may flow into the gas supply pipe 251 via the gas supply pipe 255. Furthermore, in order to prevent the first gas from entering the gas supply pipe 261 , the valve 268 may be opened to allow an inert gas to flow into the gas supply pipe 261 .

[0121] At this time, the APC valve 283 is adjusted so that the pressure in the reaction tube 210 is, for example, in the range of 1 to 3990 Pa. The temperature of the heater 211 is set so that the temperature of the substrate S is, for example, in the range of 100 to 1500° C. and heated between 400 and 800° C.

[0122] In addition, the expression of a numerical range such as "1 to 3990 Pa" in this specification means that the lower limit and the upper limit are included in the range. Therefore, for example, "1 to 3990 Pa" means "1 Pa or more and 3990 Pa or less". The same applies to other numerical ranges.

[0123] At this time, the first gas is supplied to the substrate S in a large amount at once from the side of the substrate S in the horizontal direction through the gas supply structure 212 connected to the reaction tube 210, and is exhausted through the second exhaust pipe 281. The inner diameter of the second exhaust pipe 281 is, for example, 200A, and the flow rate of the gas exhausted from the second exhaust pipe 281 is, for example, 0.5 l / h.

[0124] In addition, at this time, the valve 274 is controlled to be open, and the valve 506 is controlled to be not fully closed, preferably controlled to be fully open. The inert gas is flow-adjusted by the MFC273 and supplied to the inside of the heat-insulating box 510 via the gas supply pipe 271 and the inert gas flow path 507. Further, it flows from the bottom of the heat-insulating box 510 to the outside of the heat-insulating box 510, and is supplied to the upper surface of the base flange 401 and the inert gas flow path 509, and is discharged from the first exhaust pipe 504 via the exhaust hole 503. The inner diameter of the first exhaust pipe 504 is, for example, 50A, and the supply amount of the inert gas at this time is, for example, 0.1 to 2.0l, and the flow rate of the gas exhausted from the first exhaust pipe 504 is, for example, 50l / h. By the rapid supply of the first gas, the pressure above the processing chamber 201 instantly increases. Therefore, the supply amount of the inert gas supplied from the inert gas supply unit 270 to the heat insulating chamber 505 is made larger than that during the purging described later.

[0125] That is, in a state where the substrate S carried into the processing chamber 201 is heated, the first gas is supplied to the processing chamber 201, i.e., the processing region A of the substrate S, while the valve 282 is opened to exhaust gas from the second exhaust pipe 281. At this time, the inert gas is supplied to the insulation region B below the processing region A through the inert gas supply unit 270, while the valve 506 is opened to exhaust gas from the first exhaust pipe 504. That is, the opening and closing of the valve 506 and the valve 282 are controlled simultaneously. Thus, the atmosphere of the insulation chamber 505 is exhausted through the first exhaust pipe 504, thereby suppressing the adhesion of reaction by-products to the components disposed in the insulation chamber 505 such as the support portion 441 or the periphery of the valve 506.

[0126] Here, if any one of the valves 506 and 282 is closed first, the atmosphere in the first exhaust pipe 504 or the second exhaust pipe 281 may flow back into the reaction tube 210 or the heat-insulating chamber 505. In addition, the temperature in the first exhaust pipe 504 or the second exhaust pipe 281 is lower than the temperature in the reaction tube 210, and particles are likely to be generated. If the atmosphere in the first exhaust pipe 504 or the second exhaust pipe 281 flows back, particles may enter the processing chamber 201, etc. Therefore, the valve 506 and the valve 282 are opened and closed at the same time. Here, the simultaneous includes substantially simultaneous opening and closing control, and includes opening and closing control with a time difference such that the first gas does not flow back to the processing chamber 201.

[0127] The first gas supplied to the processing chamber 201 forms a gas flow in the upstream rectifying section 214, the space on the substrate S, and the downstream rectifying section 215. At this time, the first gas is supplied to the substrate S in a state where there is no pressure loss on each substrate S, so that uniform processing can be performed between each substrate S. By supplying the first gas from the gas supply structure 212 to the gas exhaust structure 213 in this way, a side flow of gas is formed in the processing chamber 201, thereby suppressing the influence of the inert gas supplied to the insulating chamber 505. In addition, the inert gas supplied to the insulating chamber 505 flows from the side of the insulating chamber 505 below the processing chamber 201 to the exhaust pipe 504, thereby suppressing the influence of the inert gas supplied to the insulating chamber 505 on the processing area A.

[0128] That is, the influence of the side flow can be suppressed for the bottom substrate S where the substrate support 300 is arranged, and the same airflow is formed above and below the processing chamber 201. As a result, the substrates S stacked in the vertical direction can be processed uniformly, and the inter-surface and intra-surface uniformity of the substrates S can be improved.

[0129] That is, it is possible to suppress the influence of the inert gas supplied to the insulating chamber 505 on the ambient gas of the processing chamber 201. Even when the amount of inert gas supplied to the insulating chamber 505 increases, the insulating chamber 505 constituting the insulating region B including the support portion 441 can be purged with the inert gas to suppress the adhesion of reaction by-products, while suppressing the influence of the inert gas on the processing region A.

[0130] The first gas is a raw material gas, and for example, a gas containing silicon (Si) can be used. For example, a gas containing Si and chlorine (Cl) such as hexachlorodisilane (Si2Cl6, hexachlorodisilane, abbreviated as: HCDS) can be used.

[0131] <Purge, step S101>

[0132] In this step, the valve 254 is closed, and the supply of the first gas is stopped, and the valve 274 is opened to supply an inert gas as a purge gas into the gas supply pipe 271. At this time, the valves 258, 275, and 268 may be opened to supply an inert gas as a purge gas into the gas supply pipes 255 and 265. Furthermore, the valve 282 of the second exhaust pipe 281, the APC valve 283, and the valve 506 of the first exhaust pipe 504 are kept open, and the reaction tube 210 is evacuated by the vacuum pump 284.

[0133] <Second gas supply, step S102>

[0134] After a predetermined time has passed since the start of the purge, the valve 268 is closed, and the valve 264 is opened to flow the second gas into the gas supply pipe 261. The second gas is flow-regulated by the MFC 263, and is supplied from the gas supply structure 212 to the reaction tube 210 via the upstream rectifying section 214 through the distribution section 125 and the nozzle 224. The gas is exhausted through the space on the substrate S, the downstream rectifying section 215, the gas exhaust structure 213, and the second exhaust pipe 281. At this time, in order to prevent the second gas from invading the gas supply pipe 251, the valves 258 and 275 are opened, and the inert gas is flowed from the nozzle 223.

[0135] At this time, the second gas is supplied to the substrate S from the side of the substrate S in a horizontal direction through the gas supply structure 212 communicating with the inside of the reaction tube 210 , and is exhausted through the second exhaust pipe 281 .

[0136] In addition, at this time, the valve 274 is opened, and the valve 506 is controlled to be fully open. The inert gas is flow-regulated by the MFC 273, and is supplied to the inside of the heat-insulating box 510 through the gas supply pipe 271 and the inert gas flow path 507. It flows from the bottom of the heat-insulating box 510 to the outside of the heat-insulating box 510, and is supplied to the upper surface of the base flange 401 and the inert gas flow path 509, and is discharged from the first exhaust pipe 504 through the exhaust hole 503. The supply amount of the inert gas at this time is, for example, 0.1 to 2.0 l, and is greater than the supply amount of the inert gas supplied to the heat-insulating area B when the first gas is rapidly supplied (S100).

[0137] That is, in a state where the substrate S carried into the processing chamber 201 is heated, the second gas is supplied to the processing region A while the valve 282 is opened to exhaust gas from the second exhaust pipe 281. At this time, the inert gas is supplied to the insulating chamber 505 constituting the insulating region B below the processing region A through the inert gas supply unit 270, while the valve 506 is opened to exhaust gas from the first exhaust pipe 504. That is, the opening and closing of the valve 506 and the valve 282 are controlled simultaneously. Thus, the atmosphere of the insulating region B (i.e., the insulating chamber 505) is exhausted through the first exhaust pipe 504, thereby suppressing the adhesion of reaction by-products to the components arranged in the insulating region B such as the support portion 441 or the periphery of the valve 506.

[0138] In addition, the effect of the inert gas supply by the inert gas supply unit 270 during the second gas supply is the same as the effect of the inert gas supply by the inert gas supply unit 270 during the first gas rapid supply, and thus the description thereof is omitted.

[0139] As the second gas, which is a reaction gas that reacts with the first gas, a gas containing hydrogen (H) and nitrogen (N) can be used, for example. As the gas containing H and N, for example, ammonia (NH3), diazenium (N2H2) gas, hydrazine (N2H4) gas, N3H8 gas, etc. can be used.

[0140] Here, the support portion 441 is sometimes composed of, for example, Hastelloy (nickel alloy) as a metal component. When Hastelloy reacts with NH3 in contact at high temperature, the surface becomes black and nickel oxide is precipitated. The precipitated nickel oxide affects the surrounding components. In addition, if the surface of the support portion 441 becomes black, the opaque quartz will also turn black and store heat. By supplying an inert gas to the insulation chamber 505 using the inert gas supply portion 270 as described above, it is possible to suppress contact between NH3 and the support portion 441, and discharge the metal component precipitated from the support portion 441 to the outside of the processing chamber 201.

[0141] <Purge, step S103>

[0142] After a predetermined time has passed since the supply of the second gas was started, the valve 264 is closed to stop the supply of the second gas. At this time, the valve 274 is opened to supply an inert gas as a purge gas into the gas supply pipe 271. At this time, the valves 258, 275, and 268 may also be opened to supply an inert gas as a purge gas into the gas supply pipes 255 and 265. Furthermore, while the valve 282 of the second exhaust pipe 281, the APC valve 283, and the valve 506 of the first exhaust pipe 504 are kept open, the reaction tube 210 is vacuum-exhausted by the vacuum pump 284. Thus, the reaction between the first gas and the second gas in the gas phase in the reaction tube 210 can be suppressed.

[0143] <Execution of the predetermined number of times, step S104>

[0144] The above-mentioned step S100 to step S103 are sequentially and non-simultaneously performed in a cycle for a predetermined number of times (n times, where n is an integer greater than or equal to 1). Thus, a film having a predetermined thickness is formed on the substrate S. Here, for example, a silicon nitride (SiN) film is formed.

[0145] That is, in a state where the substrate S carried into the processing chamber 201 is heated, the first gas and the second gas are alternately supplied to the processing chamber 201, and the first gas, the second gas, and the reaction by-products are exhausted from the second exhaust pipe 281 connected to the processing chamber 201. At this time, while the inert gas is supplied from below to the heat-insulating chamber 505 constituting the heat-insulating region B provided below the processing chamber 201, the inert gas is exhausted from the first exhaust pipe 504 connected to the side of the heat-insulating chamber 505 between the inert gas supply unit and the processing chamber 201 in the vertical direction.

[0146] (S14)

[0147] Next, the substrate unloading step S14 is described. In S14, the processed substrate S is unloaded out of the transfer chamber 217 in the reverse order of the above-mentioned substrate loading step S11.

[0148] (S15)

[0149] Next, the determination S15 is described. Here, it is determined whether the substrate has been processed a predetermined number of times. If it is determined that the substrate has not been processed a predetermined number of times, the process returns to the substrate loading step S11 to process the next substrate S. If it is determined that the substrate has been processed a predetermined number of times, the process ends.

[0150] In the above content, the gas flow is horizontal, but as long as the main flow of the gas is formed in the horizontal direction as a whole, the gas flow can also be diffused in the vertical direction as long as it does not affect the uniform processing of multiple substrates.

[0151] In addition, in the above contents, there are expressions such as the same, the same degree, the same, and the equivalent, but of course they also include substantially the same.

[0152] (3) Other methods

[0153] Although the present embodiment has been specifically described above, the present embodiment is not limited thereto and various modifications can be made without departing from the gist of the present embodiment.

[0154] For example, in the above-mentioned method, the first exhaust pipe 504 for exhausting the inert gas supplied to the heat-insulating chamber 505 is described as being composed of two pipes, the pipe 504a and the pipe 504b, but the present method is not limited thereto. That is, the first exhaust pipe 504 may also be a single pipe. In this method, the same effect as in the above-mentioned method can be obtained. In addition, in this method, the number of pipes can be further reduced.

[0155] In the above embodiment, the case where a film is formed by using HCDS gas as the first gas and NH 3 gas as the second gas in the film treatment step S13 is described, but the present embodiment is not limited thereto.

[0156] In addition, in the above-mentioned method, in the film processing step S13, the following case is used for explanation, that is, according to the process recipe, the first gas and the second gas are alternately supplied to the processing chamber 201 for the substrate S, and the inert gas is supplied to the heat-insulating chamber 505, but the present method is not limited to this. That is, the first gas and the second gas may be simultaneously supplied to the processing chamber 201, and the inert gas may be supplied to the heat-insulating chamber 505 to perform the film processing.

[0157] For example, in the case of a process in which hydrogen (H2) gas and oxygen (O2) gas are simultaneously supplied to oxidize the film, since both H2 and O2 are lighter than N2, the influence of the inert gas is greater. Therefore, in the absence of the first exhaust pipe 504, the inert gas supplied to the insulating chamber 505 has a greater influence on the surface uniformity. That is, in the case where the first gas and the second gas supplied to the processing chamber 201 contain components lighter than the inert gas, by arranging the first exhaust pipe 504 on the side of the insulating chamber 505, the influence of the inert gas supplied to the insulating chamber 505 can be reduced, and thus, the surface uniformity can be improved compared to the case in which the first exhaust pipe 504 is not present. That is, in this method, the same effect as the above method can be obtained, and the surface uniformity can be further improved.

[0158] Furthermore, even when the first gas or the second gas or the first gas and the second gas are placed in a plasma state to perform film processing, the same effects as those of the above-described embodiment can be obtained.

[0159] In addition, in the above-mentioned method, in the first gas supply S100 of the membrane treatment step S13, the case of using the tank 259 for rapid supply is described, but the present method is not limited to this. That is, it can also be appropriately applied when the first gas is not rapidly supplied. In this method, the same effect as the above-mentioned method can also be obtained. In addition, in this method, the supply amount of the inert gas by the inert gas supply unit 270 can be less than the case of rapid supply. For example, the supply amount of the inert gas by the inert gas supply unit 270 can be 0.01 to 0.3l.

[0160] In the second gas supply S102 of the membrane treatment step S13, even when the second gas is supplied rapidly, this method can be suitably applied, and in this method, the same effects as those of the above-described method can be obtained.

[0161] In addition, in the above embodiment, film forming processing is listed as processing performed by the substrate processing apparatus, but the present embodiment is not limited thereto. That is, in addition to the film forming processing listed in the above content, the present embodiment can also be applied to film forming processing other than the thin film exemplified in the above embodiment.

[0162] In the above embodiment, an example of forming a film using a substrate processing apparatus having a hot wall type processing furnace is described. The present invention is not limited to the above embodiment, and can also be suitably applied to forming a film using a substrate processing apparatus having a cold wall type processing furnace.

[0163] When these substrate processing apparatuses are used, each process can be performed in accordance with the same process sequence and process conditions as those in the above-mentioned embodiment, and the same effects as those in the above-mentioned embodiment can be obtained.

[0164] In addition, the above-mentioned aspects can be used in combination as appropriate. The processing order and processing conditions in this case can be the same as the processing order and processing conditions of the above-mentioned aspects, for example.

[0165] Explanation of symbols

[0166] S—substrate, 10—substrate processing device, 201—processing chamber, 210—reaction tube, 211—heater (heating unit), 212—gas supply structure (processing gas supply unit), 270—inert gas supply unit, 280—second exhaust unit, 281—second exhaust pipe, 505—insulation chamber, 504—first exhaust pipe, 508—first exhaust unit.

Claims

1. A substrate processing device, characterized in that: have: a processing chamber that processes the substrate; a processing gas supply unit for supplying processing gas to the processing chamber; A heating unit capable of heating the processing chamber; an insulating chamber, which constitutes an insulating area disposed below the processing chamber; an inert gas supply unit capable of supplying inert gas to the heat insulation chamber from below; A first exhaust unit including a first exhaust pipe connected in a vertical direction between the inert gas supply unit and the front of the processing chamber and on the side of the heat insulation chamber; and The second exhaust unit includes a second exhaust pipe connected to the processing chamber.

2. The substrate processing device according to claim 1, characterized in that: The processing gas supply unit supplies the processing gas from a side of the substrate when the substrate is in the processing chamber. The second exhaust unit is configured to exhaust the process gas from a direction different from a side to which the process gas is supplied.

3. The substrate processing device according to claim 1, characterized in that: The above-mentioned processing chamber has: a reaction tube, into which the substrate is carried; a gas supply structure disposed on the side of the reaction tube; and a gas exhaust structure, which is opposite to the gas supply structure across the reaction tube, The heat insulation chamber is arranged below the processing chamber. The second exhaust pipe is connected to the gas exhaust structure.

4. The substrate processing device according to claim 1, characterized in that: In the processing chamber, a plurality of substrates are arranged in a vertical direction.

5. The substrate processing apparatus according to claim 1, wherein: The above-mentioned processing chamber has: A reaction tube for processing a plurality of substrates arranged in a vertical direction; a gas supply structure disposed on the side of the reaction tube; and a gas exhaust structure, which is opposite to the gas supply structure across the reaction tube, The gas exhaust structure includes a first region adjacent to the processing chamber and a second region disposed below the first region.

6. The substrate processing apparatus according to claim 1, wherein: The diameter of the first exhaust pipe is configured to be smaller than the diameter of the second exhaust pipe.

7. The substrate processing apparatus according to claim 1, wherein: The conductance of the first exhaust pipe is configured to be smaller than the conductance of the second exhaust pipe.

8. The substrate processing apparatus according to claim 1, wherein: The first exhaust pipe is configured such that the diameter on the upstream side is larger than the diameter on the downstream side.

9. The substrate processing device according to claim 7, characterized in that: A valve is provided on the first exhaust pipe. A control unit is provided, the control unit being configured to control the valve so as not to be fully closed while the processing gas is being supplied to the processing chamber.

10. The substrate processing apparatus according to claim 1, wherein: The downstream side of the first exhaust pipe is configured to merge with the converging portion of the second exhaust pipe.

11. The substrate processing apparatus according to claim 10, wherein: A valve is provided downstream of the confluence portion.

12. The substrate processing apparatus according to claim 1, wherein: The first exhaust pipe and the second exhaust pipe are respectively provided with valves. A control unit is provided, the control unit being configured to be able to simultaneously control the opening and closing of the valve of the second exhaust pipe and the valve of the first exhaust pipe.

13. The substrate processing apparatus according to claim 1, wherein: The heating unit is arranged on the side of the processing chamber. The first exhaust pipe is arranged below the heating unit.

14. The substrate processing apparatus according to claim 13, wherein: A plurality of substrates are arranged in a stacked manner in the processing chamber. The heating unit is configured to be adjacent to the plurality of substrates.

15. The substrate processing apparatus according to claim 1, wherein: The support portion of the substrate support member contains a metal component. The first exhaust portion can exhaust the metal component precipitated from the support portion.

16. The substrate processing apparatus according to claim 1, wherein: The processing gas supplied to the processing chamber contains a component lighter than the inert gas.

17. The substrate processing apparatus according to claim 1, wherein: have: a storage unit that stores processing conditions according to the type of processing of the substrate; and The control unit is configured to be able to set the supply amount of the inert gas according to the type stored in the storage unit.

18. A method for manufacturing a semiconductor device, characterized in that: It has the following processes: supplying a processing gas to the processing chamber while the substrate carried into the processing chamber is heated; supplying an inert gas from below to a heat-insulating chamber constituting a heat-insulating area disposed below the processing chamber through an inert gas supply unit; exhausting the processing gas from a second exhaust pipe connected to the processing chamber; and The inert gas is exhausted from a first exhaust pipe connected to a side of the heat insulation chamber between the inert gas supply part and the processing chamber in a vertical direction.

19. A program, characterized in that The computer enables the substrate processing device to perform the following steps: supplying a processing gas to the processing chamber while the substrate carried into the processing chamber is heated; supplying an inert gas from below to a heat-insulating chamber constituting a heat-insulating area disposed below the processing chamber through an inert gas supply unit; exhausting the processing gas from a second exhaust pipe connected to the processing chamber; and The inert gas is exhausted from a first exhaust pipe connected to a side of the heat insulation chamber between the inert gas supply part and the processing chamber in a vertical direction.

Images