Temperature measuring device of electrostatic chuck

Abstract

The invention provides a temperature measuring device of an electrostatic chuck, the electrostatic chuck comprises a first electrode and a second electrode, the temperature measuring device comprises a plurality of adsorption parts and a plurality of temperature measuring parts, the adsorption parts are used for being placed on the surface, used for adsorbing a wafer, of the electrostatic chuck at intervals, and at least one adsorption part is placed corresponding to the first electrode. At least the other adsorption part is placed corresponding to the second electrode, the adsorption parts are at least electrically connected with two adsorption parts placed corresponding to the first electrode and the second electrode respectively, and the adsorption parts can be adsorbed on the electrostatic chuck when positive and negative adsorption voltages are loaded on the first electrode and the second electrode respectively; and the plurality of temperature measuring parts are arranged in one-to-one correspondence with the plurality of adsorption parts and are used for measuring the temperature of a plurality of positions of the electrostatic chuck. The temperature measuring device of the electrostatic chuck can accurately, flexibly and conveniently detect the temperature uniform distribution difference of the surface of the electrostatic chuck without damage.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a temperature measuring device for an electrostatic chuck. Background Art

[0002] Electrostatic chuck (ESC) can adsorb, heat or cool wafers in semiconductor processes. In semiconductor processes, the temperature distribution difference on the surface of the electrostatic chuck will directly affect the temperature distribution difference on the surface of the wafer, and different semiconductor processes have different requirements for the temperature distribution difference on the surface of the wafer.

[0003] In the prior art, the device for detecting the temperature distribution difference on the surface of the electrostatic chuck may cause pollution, damage or even scrapping of the electrostatic chuck, or the temperature measurement accuracy is poor, or the temperature measurement position is fixed and the temperature measurement flexibility is poor, or the temperature measurement is cumbersome and complicated and the temperature measurement convenience is poor. How to accurately, non-destructively, flexibly and conveniently detect the temperature distribution difference on the surface of the electrostatic chuck is a technical problem that needs to be solved in the field of semiconductor technology. Summary of the invention

[0004] The present invention aims to solve at least one of the technical problems existing in the prior art, and proposes a temperature measuring device for an electrostatic chuck, which can accurately, non-destructively, flexibly and conveniently detect the temperature distribution difference on the surface of the electrostatic chuck.

[0005] In order to achieve the purpose of the present invention, a temperature measuring device for an electrostatic chuck is provided, wherein the electrostatic chuck comprises a first electrode and a second electrode, and the temperature measuring device comprises a plurality of adsorption components and a plurality of temperature measuring components, wherein the plurality of adsorption components are used to be placed at intervals on the surface of the electrostatic chuck for adsorbing wafers, and at least one of the adsorption components is placed corresponding to the first electrode, and at least another of the adsorption components is placed corresponding to the second electrode, and at least two of the plurality of adsorption components that are respectively placed corresponding to the first electrode and the second electrode are electrically connected, and the plurality of adsorption components can be adsorbed on the electrostatic chuck when the first electrode and the second electrode are respectively loaded with positive and negative adsorption voltages; and the plurality of temperature measuring components are arranged in a one-to-one correspondence with the plurality of adsorption components for measuring the temperature of multiple positions of the electrostatic chuck.

[0006] Optionally, the temperature measuring component includes a temperature measuring wire and an external connector, the temperature measuring end of the temperature measuring wire is insulated and connected to the adsorption component, the external end of the temperature measuring wire is electrically connected to the external connector, the temperature measuring wire can generate thermoelectromotive force, and the external connector is used for external processing instruments.

[0007] Optionally, a first connection hole is provided on the adsorption component, the temperature measuring end of the temperature measuring wire is insulated and connected in the first connection hole, the first connection hole is located on a side of the adsorption component away from the electrostatic chuck, and the first connection hole is a blind hole.

[0008] Optionally, a depth of the first connection hole is greater than or equal to 1 / 3 of a thickness of the adsorption component.

[0009] Optionally, the temperature measuring line includes a first line segment and a second line segment, the first line segment is connected to the adsorption component, and the second line segment is connected to the external connector. When the temperature measuring device measures the temperature of the electrostatic chuck, the first line segment is located in the semiconductor process chamber, and the second line segment passes through the sealing surface of the semiconductor process chamber and extends out of the semiconductor process chamber. The first line segment is wrapped with a first protective layer, and the second line segment is wrapped with a second protective layer. The high temperature resistance temperature of the first protective layer is greater than the high temperature resistance temperature of the second protective layer.

[0010] Optionally, the material of the adsorption component includes a conductor or a semiconductor, and / or the material of the adsorption component is soft.

[0011] Optionally, the temperature measuring device further includes an electrical connection component, and the two adsorption components are electrically connected via the electrical connection component.

[0012] Optionally, the electrical connection component includes an electrical connection wire and a conductive connector, and at least one second connection hole is provided on the adsorption component. The conductive connectors are provided at both ends of the electrical connection wire, and the conductive connector at one end of the electrical connection wire is inserted into the second connection hole of one of the adsorption components, and the conductive connector at the other end of the electrical connection wire is inserted into the second connection hole of another of the adsorption components.

[0013] Optionally, the conductive connector includes a head and an elastic part, and in the extension direction of the electrical connection line, the radial dimension of the head gradually decreases, and in the direction from the hole mouth to the bottom of the second connection hole, the hole diameter of at least the bottom part of the second connection hole gradually decreases, and the elastic part can generate friction between the inner wall of the second connection hole by relying on elastic force.

[0014] Optionally, the electrical connection line is wrapped with a third protective layer, and the high temperature resistance of the third protective layer is greater than or equal to 600°C.

[0015] The present invention has the following beneficial effects:

[0016] The temperature measuring device of the electrostatic chuck provided by the present invention can be adsorbed on the surface of the electrostatic chuck by means of multiple adsorption components, and the temperature uniformity difference on the surface of the electrostatic chuck can be detected by means of multiple temperature measuring components, so that on the one hand, the temperature measuring component can detect the temperature of the surface of the electrostatic chuck at a position close to the surface of the electrostatic chuck, and then the temperature detection of the surface of the electrostatic chuck by the temperature measuring component can have a higher accuracy, and on the other hand, it can reduce or even avoid the damage to the surface of the electrostatic chuck caused by the adsorption component and the temperature measuring component, reduce or even avoid the generation of pollutants on the electrostatic chuck, and on the other hand, it can flexibly adjust the positions of the multiple adsorption components on the surface of the electrostatic chuck. The present invention can flexibly increase or decrease the number of adsorption components placed on the surface of the electrostatic chuck, and then flexibly adjust the positions of multiple temperature measuring components for measuring the temperature of the electrostatic chuck, and can flexibly increase or decrease the number of temperature measuring components for measuring the temperature of the electrostatic chuck, increase or decrease the positions of the temperature measuring of the electrostatic chuck, and on the other hand, it makes it easier to disassemble the temperature measuring device, and reduces or even avoids unnecessary operations before and after the temperature measurement. Therefore, the temperature measuring device of the electrostatic chuck provided by the present invention can accurately, non-destructively, flexibly and conveniently detect the temperature distribution difference on the surface of the electrostatic chuck, and can be suitable for the temperature measurement requirements of different types of electrostatic chucks, which helps to speed up the iterative optimization design process of the electrostatic chuck. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 A schematic diagram of the structure of a temperature measuring device for an electrostatic chuck provided in an embodiment of the present invention;

[0018] Figure 2 A schematic diagram of the structure of an adsorption component and a temperature measurement component provided in an embodiment of the present invention;

[0019] Figure 3 A schematic diagram of the cross-sectional structure of the connection between the temperature measuring component and the adsorption component provided in an embodiment of the present invention;

[0020] Figure 4 A schematic diagram of the cross-sectional structure of the first protective layer and the second protective layer adjacent to each other provided in an embodiment of the present invention;

[0021] Figure 5 A schematic diagram of the structure of a temperature measuring line and a first protective layer provided in an embodiment of the present invention;

[0022] Figure 6 for Figure 2 A schematic diagram of the enlarged structure at A in the middle;

[0023] Figure 7 A schematic diagram of a three-dimensional structure of a temperature measuring device provided in an embodiment of the present invention placed on an electrostatic chuck;

[0024] Figure 8 A schematic diagram of a top view of the temperature measuring device provided in an embodiment of the present invention placed on an electrostatic chuck;

[0025] Fig. 9 A schematic diagram of a structure in which a temperature measuring device provided by an embodiment of the present invention is placed on an electrostatic chuck placed in a semiconductor process chamber;

[0026] Fig.10 for Fig. 9 A semiconductor process chamber cover is provided with a schematic structural diagram of a chamber cover;

[0027] Fig.11 A schematic diagram of the structure of an electrical connection component provided by an embodiment of the present invention;

[0028] Description of reference numerals:

[0029] 1-temperature measuring device; 11-adsorption component; 111-second connection hole; 112-first connection hole; 12-temperature measuring component; 121-temperature measuring line; 1211-first sub-line; 1212-second sub-line; 1213-temperature measuring end; 122-external connector; 123-first protective layer; 124-second protective layer; 13-electrical connection component; 131-electrical connection line; 132-conductive connector; 1321-head; 1322-elastic part; 133-third protective layer; 2-electrostatic chuck; 21-first electrode; 22-second electrode; 3-semiconductor process chamber; 31-chamber cover; 32-chamber body. DETAILED DESCRIPTION

[0030] In order to enable those skilled in the art to better understand the technical solution of the present invention, several existing methods for detecting the temperature uniformity difference of the surface of an electrostatic chuck are briefly introduced first.

[0031] The first detection method: Use high-temperature polyimide (PI) tape to stick multiple thermocouples on the surface of the electrostatic chuck at intervals, and use multiple thermocouples to directly measure the temperature of multiple locations on the surface of the electrostatic chuck one by one, so as to detect the temperature distribution difference on the surface of the electrostatic chuck. This detection method cannot detect the temperature distribution difference of the electrostatic chuck with a temperature higher than 200°C because the high-temperature polyimide tape has a maximum temperature resistance of about 200°C, and the actual operating temperature of the electrostatic chuck can be as high as 500°C. In addition, this detection method will leave glue residue on the surface of the electrostatic chuck that is difficult to clean, and the surface of the electrostatic chuck needs to be de-glueed later. Both glue residue and de-glueing may cause damage to the surface of the electrostatic chuck, resulting in contamination of the electrostatic chuck and the semiconductor process chamber.

[0032] The second detection method: ceramic glue is used to stick multiple thermocouples on the surface of the electrostatic chuck at intervals, and multiple thermocouples are used to directly measure the temperature of multiple locations on the surface of the electrostatic chuck one by one, so as to detect the temperature distribution difference on the surface of the electrostatic chuck. This detection method will cause damage to the surface of the electrostatic chuck and even cause the electrostatic chuck to be scrapped, because the ceramic glue will stick to the electrostatic chuck tightly after solidification and cannot be removed, and it will cause pollution to the semiconductor process chamber.

[0033] The third detection method: adsorb a wafer (TC Wafer) embedded with multiple thermocouples on the electrostatic chuck, and back-blow air between the electrostatic chuck and the wafer, and detect the temperature of multiple positions of the wafer one by one through multiple thermocouples, so that the temperature distribution difference of the wafer embedded with multiple thermocouples is used as the temperature distribution difference of the surface of the electrostatic chuck. In this detection method, due to the heat transfer effect (thermal resistance) of back-blow air between the electrostatic chuck and the wafer, the temperature of the wafer cannot truly reflect the temperature of the surface of the electrostatic chuck, and the difference between the two is large. In addition, the positions of the multiple thermocouples of the wafer embedded with multiple thermocouples are fixed and cannot be changed. Therefore, it is impossible to detect the temperature of the position other than the position where the thermocouples are embedded on the wafer, resulting in poor flexibility in temperature measurement.

[0034] The fourth detection method: Use a non-contact infrared thermometer to detect the temperature of multiple locations on the surface of the electrostatic chuck, so as to detect the temperature distribution difference on the surface of the electrostatic chuck. The main principle of this detection method is to receive the intensity of the infrared radiation of the electrostatic chuck through the infrared sensor, and calculate the temperature in combination with the emissivity of the surface of the electrostatic chuck. However, the temperature measurement accuracy of this detection method is greatly affected by the emissivity of the surface of the electrostatic chuck, so the temperature measurement accuracy is poor.

[0035] The fifth detection method: Use a mechanical device to press multiple thermocouples against the surface of the electrostatic chuck, and measure the temperature of multiple locations on the surface of the electrostatic chuck directly through multiple thermocouples corresponding to each other, so as to detect the temperature distribution difference on the surface of the electrostatic chuck. This detection method is difficult to implement because the material of the electrostatic chuck is usually non-metallic ceramic material and there are no fixed points on the surface. The pressing force of the mechanical device is difficult to control, which may cause damage to the surface of the electrostatic chuck and may even cause the electrostatic chuck to break. In addition, this detection method has poor flexibility and cannot be applied to the temperature measurement needs of different types of electrostatic chucks.

[0036] In summary, the above-mentioned existing methods for detecting the temperature distribution difference on the surface of the electrostatic chuck may cause pollution, damage or even scrapping of the electrostatic chuck, or the temperature measurement accuracy is poor, or the temperature measurement position is fixed and the temperature measurement flexibility is poor, or the temperature measurement is cumbersome and complicated and the temperature measurement convenience is poor.

[0037] In order to enable those skilled in the art to better understand the technical solution of the present invention, the temperature measuring device of the electrostatic chuck provided by the present invention is described in detail below with reference to the accompanying drawings.

[0038] like Figure 1 , Figure 2 , Figure 7 and Figure 8 As shown, an embodiment of the present invention provides a temperature measuring device 1 for an electrostatic chuck 2, the electrostatic chuck 2 includes a first electrode 21 and a second electrode 22, the temperature measuring device 1 includes a plurality of adsorption components 11 and a plurality of temperature measuring components 12, the plurality of adsorption components 11 are used to be placed at intervals on the surface of the electrostatic chuck 2 for adsorbing wafers, and at least one adsorption component 11 is placed corresponding to the first electrode 21, at least another adsorption component 11 is placed corresponding to the second electrode 22, and at least two adsorption components 11 respectively placed corresponding to the first electrode 21 and the second electrode 22 among the plurality of adsorption components 11 are electrically connected, and the plurality of adsorption components 11 can be adsorbed on the electrostatic chuck 2 when the first electrode 21 and the second electrode 22 are respectively loaded with positive and negative adsorption voltages; the plurality of temperature measuring components 12 are arranged one-to-one with the plurality of adsorption components 11, and are used to measure the temperature of multiple positions of the electrostatic chuck 2.

[0039] The temperature measuring device 1 of the electrostatic chuck 2 provided in the embodiment of the present invention can be adsorbed on the surface of the electrostatic chuck 2 by means of multiple adsorption components 11, and the temperature distribution difference on the surface of the electrostatic chuck 2 can be detected by means of multiple temperature measuring components 12, so that on the one hand, the temperature measuring component 12 can detect the temperature of the surface of the electrostatic chuck 2 at a position close to the surface of the electrostatic chuck 2, and then the temperature detection of the surface of the electrostatic chuck 2 by the temperature measuring component 12 can have a higher accuracy, and on the other hand, it can reduce or even avoid the damage to the surface of the electrostatic chuck 2 caused by the adsorption component 11 and the temperature measuring component 12, reduce or even avoid the generation of pollutants on the electrostatic chuck 2, and on the other hand, it can flexibly adjust the placement of multiple adsorption components 11 on the surface of the electrostatic chuck 2 The position on the surface can be adjusted, and the number of adsorption components 11 placed on the surface of the electrostatic chuck 2 can be flexibly increased or decreased, and then the positions of the temperature measuring components 12 for measuring the temperature of the electrostatic chuck 2 can be flexibly adjusted, and the number of temperature measuring components 12 for measuring the temperature of the electrostatic chuck 2 can be flexibly increased or decreased, and the positions of the temperature measuring components 12 for measuring the temperature of the electrostatic chuck 2 can be increased or decreased. On the other hand, the disassembly of the temperature measuring device 1 can be more convenient, and unnecessary operations before and after the temperature measurement can be reduced or even avoided. Therefore, the temperature measuring device 1 of the electrostatic chuck 2 provided in the embodiment of the present invention can accurately, non-destructively, flexibly and conveniently detect the temperature uniformity difference on the surface of the electrostatic chuck 2, and can be suitable for the temperature measurement requirements of different types of electrostatic chucks 2, which helps to speed up the iterative optimization design process of the electrostatic chuck 2.

[0040] When the temperature measurement device 1 of the electrostatic chuck 2 provided in the embodiment of the present invention is used to detect the temperature uniformity difference on the surface of the electrostatic chuck 2, at least one adsorption component 11 among the multiple adsorption components 11 can be placed corresponding to the first electrode 21, and at least another adsorption component 11 can be placed corresponding to the second electrode 22, and at least two adsorption components 11 among the multiple adsorption components 11 that are respectively placed corresponding to the first electrode 21 and the second electrode 22 are electrically connected. After that, a positive adsorption voltage can be applied to the first electrode 21, and a negative adsorption voltage can be applied to the second electrode 22, so that the adsorption component 11 placed corresponding to the first electrode 21 loaded with the positive adsorption voltage will generate a negative induced charge. The adsorption component 11 placed corresponding to the second electrode 22 loaded with a negative adsorption voltage will generate a positive induced charge. Since opposite charges attract each other, the adsorption component 11 with a negative induced charge will be attracted to the first electrode 21 loaded with a positive adsorption voltage, and the adsorption component 11 with a positive induced charge will be attracted to the second electrode 22 loaded with a negative adsorption voltage, thereby realizing electrostatic adsorption of multiple adsorption components 11 on the electrostatic chuck 2. The multiple temperature measuring components 12 arranged in a one-to-one correspondence with the multiple adsorption components 11 can measure the temperature of multiple positions of the electrostatic chuck 2 corresponding to the multiple adsorption components 11 one by one, thereby realizing the detection of temperature distribution differences on the surface of the electrostatic chuck 2.

[0041] For example, in the use of Figure 1 , Figure 7 and Figure 8 When the temperature measuring device 1 with four adsorption components 11 shown in the figure detects the temperature uniform distribution difference on the surface of the electrostatic chuck 2 with a first electrode 21 and a second electrode 22, two of the four adsorption components 11 can be placed corresponding to the first electrode 21, and the other two adsorption components 11 can be placed corresponding to the second electrode 22, and the four adsorption components 11 are electrically connected. After that, a positive adsorption voltage can be applied to the first electrode 21, and a negative adsorption voltage can be applied to the second electrode 22, so that the two adsorption components 11 placed corresponding to the first electrode 21 loaded with the positive adsorption voltage will generate negative induced charges, and the negative adsorption voltage can be applied to the second electrode 22. The two adsorption components 11 placed corresponding to the second electrode 22 with voltage will both generate positive induced charges, the two adsorption components 11 with negative induced charges will both be attracted to the first electrode 21 loaded with positive adsorption voltage, and the two adsorption components 11 with positive induced charges will both be attracted to the second electrode 22 loaded with negative adsorption voltage, thereby realizing the electrostatic adsorption of the four adsorption components 11 on the electrostatic chuck 2, and the four temperature measuring components 12 arranged in one-to-one correspondence with the four adsorption components 11 can measure the temperature of the four positions of the electrostatic chuck 2 corresponding to the four adsorption components 11 one-to-one, thereby realizing the detection of the temperature distribution difference on the surface of the electrostatic chuck 2.

[0042] However, the four adsorption components 11 are not limited to being electrically connected. For example, an adsorption component 11 placed corresponding to the first electrode 21 and an adsorption component 11 placed corresponding to the second electrode 22 may be electrically connected, while another adsorption component 11 placed corresponding to the first electrode 21 and another adsorption component 11 placed corresponding to the second electrode 22 may be electrically connected. In other words, the four adsorption components 11 may be electrically connected in pairs, and one of the two electrically connected adsorption components 11 is placed corresponding to the first electrode 21, and the other adsorption component 11 is placed corresponding to the second electrode 22, that is, at least two adsorption components 11 placed corresponding to the first electrode 21 and the second electrode 22 among the multiple adsorption components 11 are electrically connected.

[0043] Furthermore, the number of the first electrodes 21 and the number of the second electrodes 22 of the electrostatic chuck 2 are not limited to one. For example, the number of the first electrodes 21 of the electrostatic chuck 2 can be two, three or more, and the number of the second electrodes 22 of the electrostatic chuck 2 can be two, three or more. The number of the adsorption components 11 of the temperature measuring device 1 is not limited to four. For example, the number of the adsorption components 11 of the temperature measuring device 1 can also be two, three, five or more.

[0044] like Figure 1 and Figure 6 As shown, optionally, the adsorption component 11 may be in the shape of a cylindrical sheet.

[0045] Optionally, the first electrode 21 and the second electrode 22 may be insulated from each other.

[0046] In one embodiment of the present invention, the material of the adsorption component 11 may include a conductor or a semiconductor. The adsorption component 11 made of a conductor or a semiconductor can facilitate the adsorption component 11 to generate induced charges.

[0047] In one embodiment of the present invention, the adsorption component 11 may be made of soft material, which can reduce the damage caused by the adsorption component 11 to the surface of the electrostatic chuck 2, thereby further detecting the temperature distribution difference on the surface of the electrostatic chuck 2 without loss.

[0048] Optionally, the adsorption component 11 may be made of gold, silver or copper.

[0049] Optionally, the material of the adsorption component 11 may have a high thermal conductivity.

[0050] like Figure 1 and Figure 2As shown, in one embodiment of the present invention, the temperature measuring component 12 may include a temperature measuring line 121 and an external connector 122. The temperature measuring end 1213 of the temperature measuring line 121 is insulated and connected to the adsorption component 11. The external end of the temperature measuring line 121 is electrically connected to the external connector 122. The temperature measuring line 121 can generate thermoelectromotive force. The external connector 122 is used for an external processing instrument (not shown in the figure).

[0051] For example, Figure 3-Figure 5 As shown, optionally, the temperature measuring component 12 may include a thermocouple. The temperature measuring line 121 of the thermocouple may include a first sub-line 1211 and a second sub-line 1212. The materials of the first sub-line 1211 and the second sub-line 1212 may both be conductors or semiconductors, and the materials of the first sub-line 1211 and the second sub-line 1212 are different. One end of the first sub-line 1211 and one end of the second sub-line 1212 may be electrically connected as a temperature measuring end 1213 of the temperature measuring line 121. The electrical connection between one end of the first sub-line 1211 and one end of the second sub-line 1212 may be insulated and connected to the adsorption component 11. The first sub-line 121 The other end of 1 can be used as the external end of the temperature measuring line 121 to be electrically connected to the external connector 122, and the other end of the second sub-line 1212 can be used as the external end of the temperature measuring line 121 to be electrically connected to the external connector 122. In this way, when the temperatures of the temperature measuring end 1213 and the external end of the temperature measuring line 121 are different, the electrically connected first sub-line 1211 and the second sub-line 1212 will generate a thermoelectromotive force, which can be fed into the processing instrument through the external connector 122, and the processing instrument can calculate the temperature of the temperature measuring end 1213 of the temperature measuring line 121 according to the thermoelectromotive force.

[0052] By insulating the temperature measuring end 1213 of the temperature measuring line 121 from the adsorption component 11, the temperature measuring line 121 can be prevented from being disturbed by the induced charge generated by the adsorption component 11, thereby improving the accuracy of temperature measurement by the temperature measuring component 12, and further accurately detecting the temperature distribution difference on the surface of the electrostatic chuck 2.

[0053] Optionally, the temperature measuring component 12 may include a K-type thermocouple.

[0054] Optionally, the radial dimension of the first sub-line 1211 and / or the second sub-line 1212 may be smaller than 0.125 mm.

[0055] Optionally, the accuracy class of the thermocouple may be Class I.

[0056] like Figure 2 , Figure 3 and Figure 6As shown, in one embodiment of the present invention, a first connecting hole 112 may be provided on the adsorption component 11, and the temperature measuring end 1213 of the temperature measuring wire 121 is insulated and connected in the first connecting hole 112. The first connecting hole 112 may be located on a side of the adsorption component 11 away from the electrostatic chuck 2, and the first connecting hole 112 may be a blind hole.

[0057] That is to say, the insulated connection between the temperature measuring end 1213 of the temperature measuring line 121 and the adsorption component 11 is achieved by insulating the temperature measuring end 1213 of the temperature measuring line 121 in the first connecting hole 112. Such a connection method can confine the temperature measuring end 1213 of the temperature measuring line 121 in the first connecting hole 112, thereby improving the reliability of the insulated connection between the temperature measuring end 1213 of the temperature measuring line 121 and the adsorption component 11.

[0058] In one embodiment of the present invention, the depth of the first connecting hole 112 is greater than or equal to 1 / 3 of the thickness of the adsorption component 11 .

[0059] In this way, when the adsorption component 11 is electrostatically adsorbed on the surface of the electrostatic chuck 2, the distance between the temperature measuring end 1213 of the temperature measuring line 121 and the surface of the electrostatic chuck 2 can be made less than or equal to 2 / 3 of the thickness of the adsorption component 11, thereby reducing the distance between the temperature measuring end 1213 of the temperature measuring line 121 and the surface of the electrostatic chuck 2, thereby improving the accuracy of temperature measurement by the temperature measuring component 12, and further accurately detecting the temperature distribution difference on the surface of the electrostatic chuck 2.

[0060] In one embodiment of the present invention, the temperature measuring end 1213 of the temperature measuring wire 121 and the adsorption component 11 may be bonded.

[0061] Optionally, the adhesive used to bond the temperature measuring end 1213 of the temperature measuring line 121 to the adsorption component 11 can be an inorganic high-temperature resistant adhesive. This adhesive can have a thermal expansion coefficient similar to that of metal or non-metal, and has a wide range of applications. Moreover, this adhesive is resistant to high temperatures and not easy to crack. It can be applied to the high-temperature working conditions of the electrostatic chuck 2, thereby improving the stability of the bonding between the temperature measuring end 1213 of the temperature measuring line 121 and the adsorption component 11.

[0062] like Figure 2-Figure 5 As shown, in one embodiment of the present invention, the temperature measuring line 121 may include a first line segment and a second line segment, the first line segment is connected to the adsorption component 11, and the second line segment is connected to the external connector 122. When the temperature measuring device 1 measures the temperature of the electrostatic chuck 2, the first line segment is located in the semiconductor process chamber 3, and the second line segment passes through the sealing surface of the semiconductor process chamber 3 and extends to the outside of the semiconductor process chamber 3. The first line segment is wrapped with a first protective layer 123, and the second line segment is wrapped with a second protective layer 124. The high temperature resistance of the first protective layer 123 is greater than the high temperature resistance of the second protective layer 124.

[0063] like Fig. 9 and Fig.10 As shown, the semiconductor process chamber 3 may include a chamber cover 31 and a chamber body 32. When the temperature measuring device 1 measures the temperature of the electrostatic chuck 2, the electrostatic chuck 2 is placed in the chamber body 32, and the chamber cover 31 sealing cover is arranged on the chamber body 32. At this time, the adsorption component 11 is located in the semiconductor process chamber 3, the first line segment connected to the adsorption component 11 is located in the semiconductor process chamber 3, the external connector 122 is located outside the semiconductor process chamber 3, a part of the second line segment is located between the semiconductor process chamber 3 and the chamber cover 31, and the other part extends to the outside of the semiconductor process chamber 3 and is connected to the external connector 122.

[0064] By wrapping the first protective layer 123 outside the first line segment and the second protective layer 124 outside the second line segment, since the high temperature resistance of the first protective layer 123 is greater than the high temperature resistance of the second protective layer 124, the first line segment in a high temperature environment can be protected by the high temperature resistance of the first protective layer 123, thereby improving the working stability of the first line segment, and further improving the temperature measurement stability of the temperature measuring component 12. The second protective layer 124 can protect a portion of the second line segment pressed between the semiconductor process chamber 3 and the chamber cover 31, so that the second line segment can smoothly pass between the semiconductor process chamber 3 and the chamber cover 31 and be protected by the second protective layer 124, thereby improving the working stability of the second line segment, and further improving the temperature measurement stability of the temperature measuring component 12.

[0065] Optionally, the second protective layer 124 may be compressible.

[0066] By making the second protective layer 124 compressible, the second protective layer 124 can be compressed between the semiconductor process chamber 3 and the chamber cover 31, and protect a portion of the second line segment pressed between the semiconductor process chamber 3 and the chamber cover 31, so that the second line segment can smoothly pass between the semiconductor process chamber 3 and the chamber cover 31 and be protected by the second protective layer 124. However, the second protective layer 124 is not limited thereto, for example, the second protective layer 124 itself can also be relatively thin.

[0067] Optionally, the high temperature resistance of the first protective layer 123 may be greater than 600° C.

[0068] Optionally, the high temperature resistance of the second protective layer 124 may be greater than 180°C.

[0069] Optionally, the material of the first protective layer 123 and the material of the second protective layer 124 can both be insulating materials. In this way, when the temperature measuring line 121 includes the first sub-line 1211 and the second sub-line 1212, the first sub-line 1211 can be wrapped with the first protective layer 123 and the second protective layer 124, and the second sub-line 1212 can also be wrapped with the first protective layer 123 and the second protective layer 124, and the first sub-line 1211 and the second sub-line 1212 are insulated by the first protective layer 123 and the second protective layer 124.

[0070] like Figure 2 and Figure 4 As shown, in one embodiment of the present invention, at a position where the second protective layer 124 is adjacent to the first protective layer 123 , the second protective layer 124 may be sleeved outside the first protective layer 123 .

[0071] In an embodiment of the present invention, the first protective layer 123 may be formed by weaving silicon dioxide wires, and / or the second protective layer 124 may include a polyimide film.

[0072] like Figure 1 , Figure 7-Figure 9 As shown, in one embodiment of the present invention, the temperature measuring device 1 may further include an electrical connection component 13 , and the two adsorption components 11 are electrically connected via the electrical connection component 13 .

[0073] By electrically connecting two adsorption components 11 through the electrical connection component 13, multiple adsorption components 11 can be electrically connected, such as Figure 1 , Figure 7-Figure 9 As shown, for example, the temperature measuring device 1 having four adsorption components 11 may have four electrical connection components 13 , and every two adsorption components 11 are electrically connected via one electrical connection component 13 , so that the four adsorption components 11 may be electrically connected via the four electrical connection components 13 .

[0074] like Fig.11 As shown, in one embodiment of the present invention, the electrical connection component 13 may include an electrical connection line 131 and a conductive connector 132. At least one second connection hole 111 is provided on the adsorption component 11. Conductive connectors 132 are provided at both ends of the electrical connection line 131. The conductive connector 132 at one end of the electrical connection line 131 is inserted into the second connection hole 111 of one adsorption component 11, and the conductive connector 132 at the other end of the electrical connection line 131 is inserted into the second connection hole 111 of another adsorption component 11.

[0075] When two adsorption components 11 are electrically connected through an electrical connection component 13, the conductive connector 132 at one end of the electrical connection line 131 can be inserted into the second connection hole 111 of one adsorption component 11, and the conductive connector 132 at the other end of the electrical connection line 131 can be inserted into the second connection hole 111 of the other adsorption component 11, so that one adsorption component 11 is electrically connected to another adsorption component 11 through one conductive connector 132, the electrical connection line 131, and another conductive connector 132 in sequence, that is, the two adsorption components 11 are electrically connected through one electrical connection component 13. In this way, the conductive connector 132 can be confined in the second connection hole 111, thereby improving the reliability of the connection between the electrical connection component 13 and the adsorption component 11.

[0076] like Figure 2 and Figure 6 As shown, optionally, the number of the second connection holes 111 on the adsorption component 11 can be multiple. For example, each adsorption component 11 of the temperature measuring device 1 having four adsorption components 11 can have two second connection holes 111, so that one adsorption component 11 can be electrically connected to another adsorption component 11 through one electrical connection component 13, and can be electrically connected to another adsorption component 11 through another electrical connection component 13, that is, one adsorption component 11 can be electrically connected to the other two adsorption components 11 through two electrical connection components 13 respectively.

[0077] Optionally, the radial dimension of the electrical connection line 131 may be less than 0.125 mm.

[0078] Optionally, the material of the electrical connection line 131 may be a non-magnetic and soft material.

[0079] Optionally, the material of the electrical connection line 131 may include nickel.

[0080] like Fig.11 As shown, in one embodiment of the present invention, the conductive connector 132 may include a head 1321 and an elastic portion 1322. In the extension direction of the electrical connection line 131, the radial dimension of the head 1321 gradually decreases. The second connection hole 111 is a blind hole, and in the direction from the hole mouth to the hole bottom of the second connection hole 111, the hole diameter of at least the bottom part of the second connection hole 111 gradually decreases. The elastic portion 1322 can generate friction between the inner wall of the second connection hole 111 by relying on elastic force.

[0081] By gradually reducing the diameter of at least the bottom portion of the second connecting hole 111 in the direction from the hole opening to the hole bottom of the second connecting hole 111, and gradually reducing the radial size of the head 1321, the insertion direction of the head 1321 can be guided by at least the bottom portion of the second connecting hole 111 during the process of inserting the head 1321 from the hole opening to the hole bottom of the second connecting hole 111. After the conductive connector 132 is inserted into the second connecting hole 111, the friction force generated between the elastic portion 1322 and the inner wall of the second connecting hole 111 by the elastic force can be increased to increase the friction force between the conductive connector 132 and the second connecting hole 111, thereby further improving the reliability of the connection between the electrical connection component 13 and the adsorption component 11.

[0082] Optionally, the head 1321 may be at least a part of a sphere, and the bottom surface of the second connecting hole 111 may be matched with the spherical surface of the head 1321 .

[0083] Optionally, the elastic portion 1322 may include a plurality of elastic ears. When the conductive head 1321 is inserted into the second connection hole 111, the hole wall of the second connection hole 111 may compress the elastic ears, and the elastic ears generate elastic force on the hole wall of the second connection hole 111. After the conductive head 1321 is inserted into the second connection hole 111, the elastic ears exert elastic force on the hole wall of the second connection hole 111, so that there is friction between the conductive connector 132 and the second connection hole 111.

[0084] like Fig.11 As shown, in one embodiment of the present invention, the electrical connection line 131 may be wrapped with a third protective layer 133 , and the high temperature resistance of the third protective layer 133 may be greater than or equal to 600° C.

[0085] This design is because when the temperature measuring device 1 measures the temperature of the electrostatic chuck 2, the electrical connecting wire 131 is located in the semiconductor process chamber 3. By wrapping the third protective layer 133 outside the electrical connecting wire 131 and making the high temperature resistance of the third protective layer 133 greater than or equal to 600°C, the high temperature resistance of the third protective layer 133 can be used to protect the electrical connecting wire 131 in a high temperature environment, thereby improving the working stability of the electrical connecting wire 131, and then improving the temperature measurement stability of the temperature measuring component 12.

[0086] Optionally, the third protection layer 133 may be made of insulating material.

[0087] In one embodiment of the present invention, the third protection layer 133 may be formed by weaving silicon dioxide wires.

[0088] In practical applications, when the temperature measuring device 1 of the electrostatic chuck 2 provided in the embodiment of the present invention is used to detect the temperature uniformity difference on the surface of the electrostatic chuck 2, the electrostatic chuck 2 can be first placed in the semiconductor process chamber 3, and the temperature measuring device 1 can be placed on the electrostatic chuck 2. Then, the external connector 122 of the temperature measuring device 1 is connected to the processing instrument outside the semiconductor process chamber 3, and the chamber cover 31 sealing cover is set on the semiconductor process chamber 3. Then, the semiconductor process chamber 3 can be evacuated. When the vacuum degree in the semiconductor process chamber 3 reaches a preset vacuum degree, the electrostatic chuck 2 can be heated. When the temperature of the electrostatic chuck 2 reaches a preset temperature, an adsorption voltage can be applied to the electrostatic chuck 2, so that the adsorption component 11 is electrostatically adsorbed on the surface of the electrostatic chuck 2, so that the temperature of the adsorption component 11 quickly reaches the same temperature as the surface of the electrostatic chuck 2. The processing instrument can obtain the temperature of the adsorption component 11 as the temperature of the surface position of the electrostatic chuck 2 corresponding to the adsorption component 11, so that the temperature uniformity difference on the surface of the electrostatic chuck 2 can be obtained through multiple adsorption components 11 and multiple temperature measuring components 12.

[0089] In summary, the temperature measuring device 1 for the electrostatic chuck 2 provided in the embodiment of the present invention can accurately, non-destructively, flexibly and conveniently detect the temperature distribution difference on the surface of the electrostatic chuck 2 .

[0090] It is to be understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of the present invention, but the present invention is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A temperature measuring device for an electrostatic chuck, the electrostatic chuck comprising a first electrode and a second electrode, characterized in that: The temperature measuring device comprises a plurality of adsorption components and a plurality of temperature measuring components, the plurality of adsorption components are used to be placed at intervals on the surface of the electrostatic chuck for adsorbing the wafer, and at least one of the adsorption components is placed corresponding to the first electrode, at least another of the adsorption components is placed corresponding to the second electrode, and at least two of the plurality of adsorption components that are respectively placed corresponding to the first electrode and the second electrode are electrically connected, and the plurality of adsorption components can be adsorbed on the electrostatic chuck when the first electrode and the second electrode are respectively loaded with positive and negative adsorption voltages; The plurality of temperature measuring components and the plurality of adsorption components are arranged in one-to-one correspondence, and are used to measure the temperature of a plurality of positions of the electrostatic chuck.

2. The temperature measuring device for an electrostatic chuck according to claim 1, characterized in that: The temperature measuring component includes a temperature measuring line and an external connector. The temperature measuring end of the temperature measuring line is insulated and connected to the adsorption component. The external end of the temperature measuring line is electrically connected to the external connector. The temperature measuring line can generate thermoelectromotive force. The external connector is used for external processing instruments.

3. The temperature measuring device for an electrostatic chuck according to claim 2, characterized in that: The adsorption component is provided with a first connection hole, the temperature measuring end of the temperature measuring wire is insulated and connected in the first connection hole, the first connection hole is located on a side of the adsorption component away from the electrostatic chuck, and the first connection hole is a blind hole.

4. The temperature measuring device for an electrostatic chuck according to claim 3, characterized in that: The depth of the first connection hole is greater than or equal to 1 / 3 of the thickness of the adsorption component.

5. The temperature measuring device for an electrostatic chuck according to claim 2, characterized in that: The temperature measuring line includes a first line segment and a second line segment, the first line segment is connected to the adsorption component, and the second line segment is connected to the external connector. When the temperature measuring device measures the temperature of the electrostatic chuck, the first line segment is located in the semiconductor process chamber, and the second line segment passes through the sealing surface of the semiconductor process chamber and extends out of the semiconductor process chamber. The first line segment is wrapped with a first protective layer, and the second line segment is wrapped with a second protective layer. The high temperature resistance temperature of the first protective layer is greater than the high temperature resistance temperature of the second protective layer.

6. The temperature measuring device for an electrostatic chuck according to claim 1, characterized in that: The material of the adsorption component includes a conductor or a semiconductor, and / or the material of the adsorption component is soft.

7. The temperature measuring device for an electrostatic chuck according to claim 1, characterized in that: The temperature measuring device further comprises an electrical connection component, and the two adsorption components are electrically connected via the electrical connection component.

8. The temperature measuring device for an electrostatic chuck according to claim 7, characterized in that: The electrical connection component includes an electrical connection line and a conductive connector. The adsorption component is provided with at least one second connection hole. Both ends of the electrical connection line are provided with the conductive connector. The conductive connector at one end of the electrical connection line is plugged into the second connection hole of one of the adsorption components, and the conductive connector at the other end of the electrical connection line is plugged into the second connection hole of another of the adsorption components.

9. The temperature measuring device for an electrostatic chuck according to claim 8, characterized in that: The conductive connector includes a head and an elastic part. In the extension direction of the electrical connection line, the radial size of the head gradually decreases, and in the direction from the hole mouth to the bottom of the second connection hole, the hole diameter of at least the bottom part of the second connection hole gradually decreases. The elastic part can generate friction between the inner wall of the second connection hole by relying on elastic force.

10. The temperature measuring device for an electrostatic chuck according to claim 8, characterized in that: The electrical connection line is wrapped with a third protective layer, and the high temperature resistance of the third protective layer is greater than or equal to 600°C.

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