Semiconductor equipment vacuum gate valve sealing structure and manufacturing method thereof

Abstract

The invention relates to the field of semiconductors, and discloses a semiconductor equipment vacuum gate valve sealing structure and a manufacturing method thereof.The semiconductor equipment vacuum gate valve sealing structure is provided with a metal substrate and a groove formed in the metal substrate, a sealing ring is arranged in the groove, and a metal connecting piece is arranged in the groove; at least part of the groove and the inner wall of the groove form a fixed structure; the sealing ring wraps the metal connecting piece; or the metal connecting piece is coated and partially penetrates through the metal connecting piece; and the sealing ring at least partially protrudes out of the groove. According to the metal connecting piece, a physical connection fixing structure is formed by the rubber material and the metal connecting piece through vulcanization forming, so that stable and high-strength connection between the sealing ring and the metal base piece can be ensured even if the rubber material is not used, and the technical problems that in the prior art, the sealing ring is prone to falling off, the service life is short, and the bonding strength is poor are solved. In addition, the sealing structure of the vacuum gate valve of the semiconductor equipment is easy to manufacture, not prone to degumming in the production forming process and high in yield.

Description

Technical Field

[0001] The present invention relates to the field of semiconductors, and in particular to a vacuum gate valve sealing structure for semiconductor equipment and a manufacturing method thereof. Background Art

[0002] During the semiconductor manufacturing process, many manufacturing processes require a clean and high vacuum environment, such as photolithography, thin film deposition, ion implantation, ion plating, or plasma etching. High vacuum manufacturing processes need to ensure the vacuum level, so the production environment needs to be sealed. Among the above processes that require a high vacuum environment, some processes use corrosive gases or active gases, such as ion implantation, ion plating, or plasma etching. These processes that use corrosive gases or active gases have more stringent requirements for the sealing of the production environment.

[0003] In the semiconductor production process, the workpiece entrance and exit require a gate valve that can be opened and closed, and the gate valve needs to have a sealing function. In the prior art, the design of the gate valve is to design a groove (dovetail groove, etc.) on a metal base such as an aluminum plate or a stainless steel plate, and then design a fluororubber or perfluoroether material sealing ring to be installed on the metal base to form a combined gate valve. Since the sealing ring is very easy to fall off from the metal base during use, it is improved into an integrated gate valve. The integrated gate valve design is to bond the metal base with the fluororubber or perfluoroether sealing ring to form an integrated gate valve.

[0004] As mentioned above, due to the strict requirements of semiconductor production for vacuum environment, most of the sealing rings used in semiconductor production are made of perfluoroether material. However, due to the inherent characteristics of perfluoroether material, there is no adhesive specifically suitable for bonding perfluoroether material and metal material in the prior art. The bonding strength of perfluoroether glue used in the prior art with metal base parts is poor, and the gate valve will be frequently opened and closed during use, which can easily cause the perfluoroether sealing ring to fall off from the metal base part, resulting in a short service life of the vacuum gate valve and high cost.

[0005] Moreover, in the actual production of semiconductors, the vacuum gate valve of semiconductor equipment is a consumable. Due to the high production cost of semiconductor devices, the vacuum gate valve is not replaced until there is a risk of failure. Instead, it is actively replaced after the vacuum gate valve has been used for a period of time, even if it has not failed. In this case, the service life of the vacuum gate valve will have a significant impact on the cost of semiconductor production. In addition, vacuum gate valves are currently mainly produced by foreign manufacturers, with high procurement costs, and domestic alternatives are urgently needed.

[0006] In order to prevent the perfluoroether sealing ring from falling off the metal base and extend the service life of the vacuum gate valve, the mainstream solutions adopted by the existing technology include: 1. The combined gate valve is formed by structural design, refer to Figure 1As shown. A groove is designed on the metal base, and then a corresponding sealing ring is designed, such as the sealing ring is fixed by the groove, and then the two monomers are combined to form a combined gate valve. However, this solution is not ideal because it is a split combination. No matter what material the sealing ring is made of, the product is easy to debond during production and molding, the finished product yield is low, and it is very easy to fall off during use, and the life is short.

[0007] 2. Through structural design, an integrated gate valve is formed, and the sealing ring is bonded to the metal base with glue. Due to the diversity of semiconductor wafer types, sizes, manufacturing methods, etc., different equipment is used, and the corresponding gate valves are also different. Different gate valves have different grooves for bonding the sealing ring. The three most common groove types are: double-sided groove, single-sided groove, and edgeless groove. Figures 2 to 4 However, this solution is not ideal, because there is no suitable glue for perfluoroether material, the bonding strength is poor, it is easy to fall off during use, and the service life is short.

[0008] Therefore, there is an urgent need for a semiconductor device vacuum gate valve sealing structure to improve the above problems. Summary of the invention

[0009] A series of simplified concepts are introduced in the Summary of the Invention, which are all simplifications of the prior art in the field, and will be further described in detail in the Detailed Description of the Invention. The Summary of the Invention of the present invention does not mean to attempt to define the key features and essential technical features of the claimed technical solution, nor does it mean to attempt to determine the scope of protection of the claimed technical solution.

[0010] The technical problem to be solved by the present invention is to provide a sealing structure in which a metal base part and a sealing ring are firmly connected and not easily separated, and the service life of a vacuum gate valve of a semiconductor device can be prolonged.

[0011] In order to solve the above technical problems, the present invention provides a semiconductor device vacuum gate valve sealing structure, which has a metal base and a groove formed on the metal base, and a sealing ring is arranged in the groove, and also includes: A metal connector is disposed in the groove, and at least part of the metal connector forms a fixed structure with the inner wall of the groove; The sealing ring covers the metal connector; or covers and partially passes through the metal connector; and the sealing ring at least partially protrudes from the groove (the sealing ring of the present invention is a non-metallic sealing ring, such as a fluorinated rubber sealing ring or a perfluoroether sealing ring.

[0012] It should be noted that the metal connector and the groove can be manufactured using an integrated molding process; or, the metal connector and the groove form a split structure, and the metal connector and the groove are assembled, welded or glued together. Since they are all metal parts, assembly and gluing can also make them form a firm connection.

[0013] Preferably, the semiconductor device vacuum gate valve sealing structure is further improved, and a glue layer is formed between the sealing ring and the groove and the metal connector, and the glue layer is used to increase the connection strength between the sealing ring and the groove, and between the sealing ring and the metal connector.

[0014] Preferably, the semiconductor device vacuum gate valve sealing structure is further improved, and the distance between the edge of the metal connector cross-sectional pattern at other positions except the connection groove and the edge of the seal ring cross-sectional pattern is greater than 0.5 cm. This design can ensure that the metal connector does not protrude from the seal ring after the seal ring is bonded, and ensure that the seal ring has sufficient compression to ensure the sealing performance of the seal ring.

[0015] Preferably, the semiconductor device vacuum gate valve sealing structure is further improved, and the metal connector is a convex portion extending from the bottom wall of the groove to the groove mouth along the length direction of the groove.

[0016] Preferably, the semiconductor device vacuum gate valve sealing structure is further improved, and the convex portion is formed into a plurality of split convex portions with the same structure, and the split convex portions are arranged at intervals.

[0017] Preferably, the semiconductor device vacuum gate valve sealing structure is further improved, and a through hole is formed on the side wall of the convex portion; The sealing ring can be inserted and fixed in the through hole of the convex part.

[0018] Preferably, the semiconductor device vacuum gate valve sealing structure is further improved so that the cross section of the protrusion forms a T-shaped structure.

[0019] Preferably, the semiconductor device vacuum gate valve sealing structure is further improved, further comprising: A first groove formed on an inner side wall of one side of the groove; A second trench is formed on an inner sidewall of the trench opposite to the first trench.

[0020] Preferably, the semiconductor device vacuum gate valve sealing structure is further improved, further comprising: The step structure is formed on both side walls of the groove below the top surface of the protrusion.

[0021] Preferably, the semiconductor device vacuum gate valve sealing structure is further improved, and the metal connector is connected between the two side walls of the groove; A plurality of through holes formed on the metal connector; The sealing ring can be inserted and fixed in the through hole.

[0022] Preferably, the semiconductor device vacuum gate valve sealing structure is further improved, and the metal connector is composed of a plurality of split structures, and the split structures are arranged at intervals.

[0023] Preferably, the semiconductor device vacuum gate valve sealing structure is further improved, further comprising: The cavity is formed below the metal connector and is partially filled with a sealing ring.

[0024] Preferably, the semiconductor device vacuum gate valve sealing structure is further improved, further comprising: A step structure is formed in the cavity.

[0025] In order to solve the above technical problems, the present invention provides a method for manufacturing a vacuum gate valve sealing structure of a semiconductor device as described in any one of the above items, comprising the following steps: S1, providing an upper mold, wherein the upper mold is formed into a molding cavity mold of a sealing ring shape and size; Providing a middle mold, wherein the middle mold is formed into a molding cavity mold for accommodating a metal base member; Providing a lower die, the lower die is used to support the middle die; S2, place the middle mold on the lower mold and put the specified rubber material into the groove; S3, cover the upper mold and enter the vulcanization molding equipment for vulcanization molding; S4, remove the upper die, middle die and lower die.

[0026] Preferably, the manufacturing method is further improved, and when executing step S2, glue is firstly coated on the inner side wall of the groove and the outside of the metal connector, and then the specified glue is added.

[0027] Preferably, the manufacturing method is further improved, and when executing step S2, the inner side wall of the groove and the surface of the metal connector are sandblasted, then coated with glue, and then the specified glue is placed.

[0028] The present invention designs an integrated metal connector or multiple split metal connectors in the groove of the metal base. The size of the metal connector can be designed according to the size of the sealing ring. The rubber material and the metal connector form a physically connected fixed structure through vulcanization molding, so that even without using glue, the sealing ring and the metal base can be ensured to form a stable and high-strength connection, thereby solving the technical problems of the prior art that the sealing ring is easy to fall off, has a short service life, and has poor bonding strength. In addition, the semiconductor equipment vacuum gate valve sealing structure provided by the present invention is easy to manufacture, is not easy to debond during production molding, and has a high yield.

[0029] Furthermore, after the semiconductor device vacuum gate valve sealing structure of the present invention is used on the semiconductor device, the sealing ring is removed, and the metal base and the metal connecting parts are vulcanized and molded again, which can greatly reduce the production cost of the semiconductor device. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] The drawings of the present invention are intended to illustrate the general characteristics of the methods, structures and / or materials used in specific exemplary embodiments of the present invention, and to supplement the description in the specification. However, the drawings of the present invention are schematic diagrams not drawn to scale, and thus may not accurately reflect the precise structure or performance characteristics of any given embodiment, and the drawings of the present invention should not be interpreted as limiting or restricting the range of values ​​or properties covered by the exemplary embodiments of the present invention. The present invention is further described in detail below in conjunction with the drawings and specific embodiments.

[0031] Figure 1 The utility model is a cross-sectional schematic diagram of the existing combined gate valve sealing structure.

[0032] Figure 2 The utility model is a cross-sectional schematic diagram of an existing double-sided groove arrangement sealing ring.

[0033] Figure 3 The utility model is a cross-sectional schematic diagram of a sealing ring arranged in a single-side groove.

[0034] Figure 4 The utility model is a cross-sectional schematic diagram of an existing sealing ring arranged in a borderless groove.

[0035] Figure 5 It is a partial view of the second embodiment of the present invention, which shows the cross-sectional angle along the length direction of the groove.

[0036] Figure 6 yes Figure 5 The cross-sectional view at the AA position shows the cross-sectional angle perpendicular to the length of the groove.

[0037] Figure 7 It is a cross-sectional view of the improved structure of the second embodiment, which shows the cross-sectional angle in the direction perpendicular to the length of the groove.

[0038] Figure 8 1 is a partial view of the third embodiment of the present invention, which shows the cross-sectional angle along the length direction of the groove.

[0039] Fig. 9 yes Figure 8 The cross-sectional view at the middle BB position shows the cross-sectional angle perpendicular to the groove length direction.

[0040] Fig.10 1 is a partial view of the fourth embodiment of the present invention, which shows the side angle along the length direction of the groove.

[0041] Fig.11It is a partial view of the improved structure of the fourth embodiment of the present invention, which shows the cross-sectional angle in the vertical groove length direction.

[0042] Fig.12 It is a top view of the first implementation manner of the fifth embodiment of the present invention, which shows the cross-sectional angle along the length direction of the groove.

[0043] Fig.13 It is a top view of the second implementation manner of the fifth embodiment of the present invention, which shows the top view angle.

[0044] Fig.14 yes Fig.13 Sectional view at CC position, showing the section angle perpendicular to the groove length.

[0045] Fig.15 It is a top view of the third implementation manner of the fifth embodiment of the present invention.

[0046] Description of reference numerals: Metal base 1; Groove 2; Sealing ring 3; Metal connector 4 First groove 5; Second groove 6; Through hole 7; Step structure 8; Cavity 9. DETAILED DESCRIPTION

[0047] The following is an explanation of the embodiments of the present invention by specific specific embodiments, and those skilled in the art can fully understand other advantages and technical effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through different specific embodiments, and the details in this specification can also be applied based on different viewpoints, and various modifications or changes can be made without deviating from the general design concept of the invention. It should be noted that, in the absence of conflict, the following embodiments and the features in the embodiments can be combined with each other. The following exemplary embodiments of the present invention can be implemented in a variety of different forms and should not be interpreted as being limited to the specific embodiments described here. It should be understood that these embodiments are provided to make the disclosure of the present invention thorough and complete, and to fully convey the technical solutions of these exemplary specific embodiments to those skilled in the art. It should be understood that when an element is referred to as "connected" or "coupled" to another element, the element can be directly connected or coupled to another element, or there can be an intermediate element. The difference is that when an element is referred to as "directly connected" or "directly coupled" to another element, there is no intermediate element. In all the drawings, the same reference numerals always represent the same elements.

[0048] In the first embodiment, the present invention provides a semiconductor device vacuum gate valve sealing structure, which comprises a metal base 1 and a groove 2 formed on the metal base 1, a sealing ring 3 is arranged in the groove 2, and further comprises: A metal connector 4 is disposed in the groove 2, and at least part of the metal connector 4 forms a fixed structure with the inner wall of the groove 2; A sealing ring 3, which covers the metal connector 4; or, which covers and partially passes through the metal connector 4; And the sealing ring 3 at least partially protrudes from the groove 2. The sealing ring 3 protruding from the groove 2 can be high in the middle and low on both sides, or high on both sides and low in the middle.

[0049] The metal connector 4 and the groove 2 can be assembled together as separate structures or integrally formed. Their specific connection form and the specific form of the sealing ring 3 covering the metal connector 4 are further explained in the subsequent preferred embodiments.

[0050] As a further improvement to the first embodiment, a glue layer is formed between the sealing ring 3 and the groove 2 and the metal connector 4 .

[0051] As a further improvement to the first embodiment, the distance between the top of the metal connector 4 and the top surface of the groove 2 is greater than 0.5 cm.

[0052] Further improving the first embodiment, the distance between the edge of the cross-sectional pattern of the metal connector 4 at other positions except the connection groove and the edge of the cross-sectional pattern of the sealing ring 3 is greater than 0.5 cm. That is, except for the connection position (such as the position connected to the bottom wall of the groove, or the position connected to the side wall of the groove), the other positions of the cross-sectional pattern of the metal connector 4 are located inside the edge of the cross-sectional pattern of the sealing ring 3.

[0053] In the second embodiment, the present invention provides a semiconductor device vacuum gate valve sealing structure, which is implemented based on the structure described in the first embodiment, referring to Figure 5 and Figure 6 As shown; The metal connector 4 is an integrated long strip convex portion extending from the bottom wall of the groove 2 to the mouth of the groove 2 along the length direction of the groove 2. Preferably, the long strip convex portion is arranged along the length direction of the groove 2 at the center line of the bottom wall; the width of the convex portion ranges from 0.5mm to 1.5mm, and the height ranges from 1.0mm to 2.5mm. A plurality of strip-shaped through holes 7 arranged in sequence along the length direction of the groove 2 are formed at the lower part of the long strip convex portion near the bottom wall of the groove 2, and the distance between two strip-shaped through holes 7 ranges from 0.5mm to 30mm; A sealing ring 3, which covers the long strip-shaped protrusion and partially passes through the strip-shaped through hole 7; The sealing ring 3 at least partially protrudes from the groove, and the portion of the sealing ring 3 protruding from the groove 2 may be higher in the middle and lower at both sides, or higher at both sides and lower in the middle.

[0054] It should be noted that there is another embodiment of each convex portion: a plurality of convex portions are sequentially arranged along the length direction of the groove 2, a specified gap is formed between two adjacent convex portions, and each convex portion is formed with the above-mentioned strip-shaped through hole 7.

[0055] Further improving the second embodiment, the side wall of the convex portion is formed with a through hole 7, the sealing ring 3 can be passed through and fixed in the through hole 7 of the convex portion, and one end of the center line of the through hole 7 faces the bottom wall of the groove 2, referring to Figure 7 In this embodiment, the convex portion can be a one-piece long strip convex portion, or can be a plurality of split convex portions.

[0056] It should be noted that the structure described in the second embodiment can be used for double-sided grooves, single-sided grooves and grooves without edges.

[0057] In a third embodiment, the present invention provides a semiconductor device vacuum gate valve sealing structure, which is implemented based on the structure described in the first embodiment, referring to Figure 8 and Fig. 9 As shown; The metal connector 4 is an integrated long strip convex portion extending from the bottom wall of the groove 2 to the mouth of the groove 2 along the length direction of the groove 2. Preferably, the long strip convex portion is arranged along the length direction of the groove 2 at the center line of the bottom wall; the width of the convex portion ranges from 0.5mm to 1.5mm, and the height ranges from 1.0mm to 2.5mm. A plurality of through holes 7 are formed on the side wall of the long strip convex portion, and the distance between two through holes 7 ranges from 0.5mm to 30mm; in this embodiment, the center line of the through hole 7 is preferably parallel to the bottom wall of the groove 2; A first groove 5 formed on an inner side wall of one side of the groove 2; The second groove 6 is formed on the inner side wall of the groove 2 on the opposite side of the first groove 5 .

[0058] The first grooves 5 and the second grooves 6 may be arranged symmetrically or asymmetrically.

[0059] It should be noted that the structure described in the third embodiment is preferably used for double-sided grooves; when used for single-sided grooves, it only has one of the first groove 5 or the second groove 6, and is not recommended for grooves without edges.

[0060] In a fourth embodiment, the present invention provides a semiconductor device vacuum gate valve sealing structure, which is implemented based on the structure described in the first embodiment, referring to Fig.10 As shown; The cross section of the convex portion forms a T-shaped structure, for example, the interface along the length direction of the groove or perpendicular to the length direction of the groove forms a T-shaped structure.

[0061] It should be noted that the structure described in the fourth embodiment can be used for double-sided grooves, single-sided grooves and grooves without edges.

[0062] Further improve the fourth embodiment, refer to Fig.11 As shown, an additional step structure 8 is formed on both side walls of the groove 2 below the top surface of the protrusion.

[0063] It should be noted that the improved structure of the fourth embodiment is preferably used for double-sided grooves; when used for single-sided grooves, a step structure 8 is formed on one side of the side wall, and it is not recommended to be used for grooves without sides.

[0064] Correspondingly, the first groove 5 and / or the second groove 6 may also be provided on the side wall of the groove 2 below the T-shaped structural beam.

[0065] In addition, it should also be understood that, although the terms "first", "second", etc. may be used here to describe different elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are only used to distinguish an element, component, region, layer or part from another element, component, region, layer or part. Therefore, without departing from the teachings of exemplary embodiments of the present invention, the first element, component, region, layer or part discussed below may also be referred to as the second element, component, region, layer or part.

[0066] In a fifth embodiment, the present invention provides a semiconductor device vacuum gate valve sealing structure, which is implemented based on the structure described in the first embodiment; The metal connector 4 is connected between the two side walls of the groove 2; A plurality of through holes 7 are formed on the metal connecting member 4; The sealing ring 3 can be inserted and fixed in the through hole 7 .

[0067] Based on the fifth embodiment above, three specific implementation modes are provided; The first implementation method, refer to Fig.12 As shown, the metal connector 4 is formed as a cover plate installed between the two side walls of the groove 2, a plurality of through holes 7 are formed on the cover plate, and the groove 2 below the cover plate is filled with a sealing ring 3.

[0068] The second implementation method, refer to Fig.13 and Fig.14 As shown, the metal connector 4 is formed as a cover plate installed between the two side walls of the groove 2, a plurality of through holes 7 are formed on the cover plate, the groove 2 below the cover plate is filled with a sealing ring 3, a cavity 9 is formed below the cover plate, a plurality of through holes 7 are formed on the cover plate, the cavity 9 is filled with a sealing ring 3 and the sealing ring 3 passes through the through holes 7, and a step structure 8 is formed in the cavity 9.

[0069] The third implementation method, reference Fig.15 As shown, the metal connector 4 is formed into a plurality of split structures covered between the two side walls of the groove 2, each split structure is arranged at intervals, and each split structure is formed with a through hole 7. In the figure, the split structure is formed into a cover plate approximately in the shape of an X, and the four corners of the X-shaped cover plate connect the two side walls of the groove. The sealing ring 3 covers each split structure, and the groove 2 below each split structure is also filled with a sealing ring 3.

[0070] It should be noted that the fifth embodiment and its improved structure are preferably used for double-sided grooves; when used for single-sided grooves, a step structure 8 is formed on one side of the side wall, and it is not recommended to be used for borderless grooves.

[0071] In a sixth embodiment, the present invention provides a method for manufacturing a semiconductor device vacuum gate valve sealing structure according to any of the above embodiments, comprising the following steps: S1, providing an upper mold, the upper mold is formed into a molding cavity mold of the shape and size of the sealing ring 3; Providing a middle mold, wherein the middle mold is formed into a molding cavity mold for accommodating the metal base member 1; Providing a lower die, the lower die is used to support the middle die; S2, placing the middle mold on the lower mold and putting the specified rubber material into groove 2; S3, cover the upper mold and enter the vulcanization molding equipment for vulcanization molding; S4, remove the upper die, middle die and lower die.

[0072] The method for manufacturing the vacuum gate valve sealing structure of semiconductor equipment is further improved. When executing step S2, glue is firstly applied to the inner wall of the groove 2 and the outside of the metal connector 4, and then a specified glue is added.

[0073] The method for manufacturing the vacuum gate valve sealing structure of semiconductor equipment is further improved. When executing step S2, the inner wall of the groove 2 and the surface of the metal connector 4 are sandblasted, then coated with glue, and then a specified glue is added.

[0074] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those of ordinary skill in the art to which the present invention belongs. It will also be understood that, unless expressly defined herein, terms such as those defined in general dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant art, and not interpreted in an ideal or overly formal sense.

[0075] The present invention has been described in detail above through specific implementation modes and embodiments, but these do not constitute limitations of the present invention. Without departing from the principles of the present invention, those skilled in the art may also make many variations and improvements, which should also be regarded as the protection scope of the present invention.

Claims

1. A semiconductor device vacuum gate valve sealing structure, comprising a metal base (1) and a groove (2) formed on the metal base (1), a sealing ring (3) arranged in the groove (2), characterized in that: Also includes: A metal connecting piece (4) disposed in the groove (2), at least part of which forms a fixed structure with the inner wall of the groove (2); A sealing ring (3), which covers the metal connecting piece (4); or, which covers and partially passes through the metal connecting piece (4); Furthermore, the sealing ring (3) at least partially protrudes out of the groove (2).

2. The semiconductor device vacuum gate valve sealing structure according to claim 1, characterized in that: A glue layer is formed between the sealing ring (3), the groove (2) and the metal connecting piece (4).

3. The semiconductor device vacuum gate valve sealing structure according to claim 1, wherein: The distance between the edge of the cross-sectional pattern of the metal connecting piece (4) at other positions except the connecting groove and the edge of the cross-sectional pattern of the sealing ring (3) is greater than 0.5 cm.

4. The semiconductor device vacuum gate valve sealing structure according to claim 1, wherein: The metal connecting piece (4) is a convex portion extending from the bottom wall of the groove (2) toward the mouth of the groove (2) along the length direction of the groove (2).

5. The semiconductor device vacuum gate valve sealing structure according to claim 4, characterized in that: The convex portion is formed as a plurality of split convex portions having the same structure, and the split convex portions are arranged at intervals.

6. The semiconductor device vacuum gate valve sealing structure according to claim 4 or 5, characterized in that: A through hole (7) is formed on the side wall of the convex portion; The sealing ring (3) can be inserted into and fixed in the through hole (7) of the convex portion.

7. The semiconductor device vacuum gate valve sealing structure according to claim 4 or 5, characterized in that: The cross section of the convex portion forms a T-shaped structure.

8. The semiconductor device vacuum gate valve sealing structure according to claim 4 or 5, characterized in that: Also includes: A first groove (5) formed on an inner side wall of one side of the groove (2); A second groove (6) is formed on the inner side wall of the groove (2) on the opposite side of the first groove (5).

9. The semiconductor device vacuum gate valve sealing structure according to claim 4 or 5, characterized in that: Also includes: The step structure (8) is formed on both side walls of the groove (2) below the top surface of the convex portion.

10. The semiconductor device vacuum gate valve sealing structure according to claim 1, wherein: The metal connecting piece (4) is connected between the two side walls of the groove (2); A plurality of through holes (7) formed on the metal connecting member (4); The sealing ring (3) can be inserted into and fixed in the through hole (7).

11. The semiconductor device vacuum gate valve sealing structure according to claim 10, wherein: The metal connecting piece (4) is composed of a plurality of split structures, and the split structures are arranged at intervals.

12. The semiconductor device vacuum gate valve sealing structure according to claim 11, further comprising: The cavity (9) is formed below the metal connecting piece (4) and is partially filled with the sealing ring (3).

13. The semiconductor device vacuum gate valve sealing structure according to claim 12, further comprising: A step structure (8) is formed in the cavity (9).

14. A method for manufacturing a semiconductor device vacuum gate valve sealing structure according to any one of claims 1 to 13, characterized in that: The following steps are involved: S1, providing an upper mold, wherein the upper mold is formed into a molding cavity mold in the shape and size of the sealing ring (3); Providing a middle mold, wherein the middle mold is formed into a molding cavity mold for accommodating a metal base member (1); Providing a lower die, the lower die is used to support the middle die; S2, placing the middle mold on the lower mold, and placing the specified rubber material into the groove (2); S3, cover the upper mold and enter the vulcanization molding equipment for vulcanization molding; S4, remove the upper die, middle die and lower die.

15. The manufacturing method according to claim 14, characterized in that: When executing step S2, glue is first applied to the inner wall of the groove (2) and the outer surface of the metal connecting piece (4), and then a designated glue material is added.

16. The manufacturing method according to claim 15, characterized in that: When executing step S2, the inner wall of the groove (2) and the surface of the metal connecting piece (4) are sandblasted, then coated with glue, and then the specified glue is placed.

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