Wax removal cleaning process method and equipment for surface of silicon wafer and silicon wafer

Abstract

The embodiment of the invention relates to the technical field of semiconductor manufacturing, and discloses a dewaxing cleaning process method and equipment for the surface of a silicon wafer and the silicon wafer. The method comprises the following steps: in a dewaxing and cleaning process, introducing a groove position for weighing and filling a dewaxing agent; adjusting the cleaning liquid medicine weighed and filled in each slot position, and adjusting the arrangement sequence of each slot position to obtain a new cleaning sequence; and cleaning the silicon wafer according to the cleaning sequence. According to the scheme, the dewaxing agent can be introduced on the basis of an original dewaxing and cleaning process, the dosage of the liquid medicine is reduced, the problem of wax residue can be improved in a targeted mode, the particle level of the surface of the silicon wafer is improved, meanwhile, the cleaning liquid medicine sequence of the original cleaning process is adjusted, the metal removal capacity of the surface of the silicon wafer is improved, and the problem that the Al content is high after dewaxing and cleaning of the original process is solved; the cleaning effect of the silicon wafer is comprehensively improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to a dewaxing and cleaning process method for a silicon wafer surface, equipment and a silicon wafer. Background Art

[0002] In recent years, with the rapid development of Internet technology, the field of semiconductor manufacturing has developed rapidly. Semiconductor silicon wafers are important raw materials in the modern electronic information industry chain. In the process of silicon wafer manufacturing, the last step of silicon wafer manufacturing, silicon wafer cleaning, is a key process to ensure the quality of silicon wafers. The three major pollutants on the surface of silicon wafers after chemical mechanical polishing (CMP) are: organic matter, particles and metal pollution. Silicon wafer cleaning is to remove the above three major pollutants through cleaning equipment and liquid medicine to obtain clean silicon wafers with good surface particles and metal levels to meet the needs of back-end customers. The silicon wafer cleaning process is divided into two steps: dewaxing cleaning and final cleaning. Dewaxing cleaning needs to remove the polishing wax residue (organic residue) on the surface of the silicon wafer after CMP, most of the particles and metal contamination, in order to ensure the cleaning quality of the final cleaning. Therefore, the stronger the cleaning ability of dewaxing cleaning, the more helpful it is to obtain clean silicon wafers. The traditional dewaxing cleaning process is usually a standard RCA wet cleaning, which mainly uses SC-1 liquid (NH 4 OH+H 2 O 2 ) and DHF (low concentration hydrofluoric acid) to remove the three major residues on the surface of the silicon wafer, which has a certain removal effect, but is not targeted enough. However, during this cleaning process, some metals (such as aluminum, Al) accumulated in the SC-1 solution and the solution tank will be brought to the surface of the silicon wafer, resulting in high metal Al, and excessive organic residues (wax residues) cannot be fully cleaned, resulting in clustered particles on the surface of the silicon wafer. Therefore, it is necessary to develop a dewaxing cleaning process that can simultaneously improve the wax residue and metal level on the surface of the silicon wafer to solve the above difficulties. Summary of the invention

[0003] One purpose of the present application is to provide a dewaxing and cleaning process method, equipment and silicon wafer for the surface of silicon wafers, at least to solve the problem that the surface of the silicon wafer still has high metal Al and too much organic residue after cleaning, which cannot be fully cleaned. In the present application, in the dewaxing and cleaning process, slots for weighing dewaxing agents are introduced; the cleaning liquid weighed in each slot is adjusted, and the arrangement order of each slot is adjusted to obtain a new cleaning order; the silicon wafer is cleaned according to the new cleaning order. By adopting this scheme, a dewaxing agent can be introduced into the original dewaxing and cleaning process, so as to reduce the amount of liquid and improve the problem of wax residue in a targeted manner, so as to improve the particle level on the surface of the silicon wafer. At the same time, by adjusting the cleaning liquid order of the original cleaning process, the metal removal ability of the silicon wafer surface is improved, and the problem of high Al after the original process of dewaxing and cleaning is improved, so as to comprehensively improve the cleaning effect of the silicon wafer.

[0004] To achieve the above objectives, some embodiments of the present application provide the following aspects:

[0005] In a first aspect, some embodiments of the present application further provide a method for removing wax from a silicon wafer surface, comprising:

[0006] In the dewaxing and cleaning process, a tank for loading dewaxing agent is introduced;

[0007] Adjust the cleaning solution in each slot and adjust the arrangement order of each slot to obtain a new cleaning order;

[0008] Clean the silicon wafer according to the new cleaning sequence.

[0009] In a second aspect, some embodiments of the present application further provide a device for performing the above-mentioned dewaxing and cleaning process method for the surface of a silicon wafer.

[0010] In a third aspect, some embodiments of the present application further provide a silicon wafer, which is obtained by using the dewaxing and cleaning process method for the surface of the silicon wafer as described above.

[0011] In a fourth aspect, some embodiments of the present application further provide an electronic device, comprising: one or more processors; and a memory storing computer program instructions, wherein the computer program instructions, when executed, cause the processor to perform the steps of the method described above.

[0012] In a fifth aspect, some embodiments of the present application further provide a computer-readable medium having computer program instructions stored thereon, wherein the computer program instructions can be executed by a processor to implement the method as described above.

[0013] In a sixth aspect, some embodiments of the present application further provide a computer program product, comprising a computer program / instruction, which implements the steps of the method described above when executed by a processor.

[0014] Compared with the related art, the solution provided in the embodiment of the present application introduces a slot for weighing the dewaxing agent in the dewaxing and cleaning process; adjusts the weighing of the cleaning solution in each slot, and adjusts the arrangement order of each slot to obtain a new cleaning order; and cleans the silicon wafer according to the new cleaning order. By adopting this solution, the dewaxing agent can be introduced into the original dewaxing and cleaning process, so as to reduce the amount of solution and improve the wax residue problem in a targeted manner, so as to improve the particle level on the surface of the silicon wafer. At the same time, by adjusting the cleaning solution order of the original cleaning process, the metal removal ability of the silicon wafer surface is improved, and the problem of high Al after the original process of dewaxing and cleaning is improved, so as to comprehensively improve the cleaning effect of the silicon wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] One or more embodiments are exemplarily described by pictures in the corresponding drawings, and these exemplified descriptions do not constitute limitations on the embodiments. Elements with the same reference numerals in the drawings represent similar elements, and unless otherwise stated, the figures in the drawings do not constitute proportional limitations.

[0016] Figure 1 An exemplary flow chart of a dewaxing and cleaning process for a silicon wafer surface provided according to some embodiments of the present application;

[0017] Figure 2 A schematic diagram of the liquid sequence of the original dewaxing and cleaning process provided according to some embodiments of the present application;

[0018] Figure 3 A schematic diagram of the liquid sequence of a new dewaxing and cleaning process provided according to some embodiments of the present application;

[0019] Figure 4 A schematic diagram of an experimental result data display provided in this embodiment;

[0020] Figure 5 A schematic diagram of another experimental result data display provided in this embodiment;

[0021] Figure 6 A schematic diagram of another experimental result data display provided in this embodiment;

[0022] Figure 7 An exemplary structural diagram of the electronic device is disclosed. DETAILED DESCRIPTION

[0023] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0024] First embodiment

[0025] The first embodiment of the present application relates to a method for removing wax from the surface of a silicon wafer. Figure 1 As shown, the method may include the following steps:

[0026] Step S101, in the dewaxing and cleaning process, a tank for loading a dewaxing agent is introduced;

[0027] In the dewaxing and cleaning process of silicon wafers, after heating and dewaxing, some traces of wax and other impurities may remain on the surface of the silicon wafer. At this time, an appropriate solvent can be used to clean the silicon wafer. Commonly used solvents include organic solvents such as isopropyl alcohol and acetone, which have good dissolving power and can effectively remove wax and other organic pollutants. Soak the silicon wafer in the solvent or use the solvent spray method to clean the silicon wafer. The cleaning time and the concentration of the solvent can be adjusted according to the degree of contamination of the silicon wafer. During the cleaning process, appropriate stirring or ultrasonic treatment can be performed to enhance the cleaning effect of the solvent. Ultrasonic cleaning can remove impurities from the surface of the silicon wafer by generating tiny bubbles and vibrations.

[0028] After solvent cleaning, there may be residual solvent and some dissolved impurities on the surface of the silicon wafer. In order to remove these residues, the silicon wafer needs to be rinsed with pure water. Use high-purity deionized water to ensure that no new impurities are introduced. Spraying, immersion or flow rinsing can be used to allow pure water to fully contact the surface of the silicon wafer. The rinsing time and water volume can be adjusted according to the size of the silicon wafer and the degree of contamination. Generally speaking, multiple rinses are required to ensure that the residues on the surface of the silicon wafer are completely removed.

[0029] In this solution, for the dewaxing and cleaning process of silicon wafers, impurities on the silicon wafers can be removed by using different slots to hold different cleaning solutions. It can be understood that in the dewaxing and cleaning process, the silicon wafers will be placed in each slot in a certain order and undergo corresponding cleaning treatments.

[0030] In this scheme, adjustments are made based on the existing commonly used cleaning solutions, and a dewaxing agent is introduced into the original dewaxing cleaning process, so as to reduce the amount of solution used and improve the wax residue problem in a targeted manner, thereby improving the particle level on the surface of the silicon wafer.

[0031] Step S102, adjusting the cleaning solution loaded in each slot and adjusting the arrangement order of each slot to obtain a new cleaning order;

[0032] This solution, after determining the cleaning solution to be used, adjusts the cleaning solution sequence of the original cleaning process to improve the metal removal ability on the silicon wafer surface and improve the problem of high Al after dewaxing and cleaning in the original process.

[0033] Step S103, cleaning the silicon wafer according to the new cleaning sequence.

[0034] After determining the amount of cleaning solution loaded in each slot, the silicon wafer can be controlled to enter each slot in turn to perform the cleaning operation on the silicon wafer.

[0035] In one embodiment, there are two slots for introducing and loading the wax remover, which are located in slot 4 and slot 5 respectively.

[0036] In order to ensure the wax removal effect, two slots can be set in each slot to weigh the wax remover, and they are located in slots 4 and 5 respectively.

[0037] In one embodiment, the concentration of the wax remover in the four tanks is wax remover: water = 1:30;

[0038] The concentration of the wax remover in the five tanks is wax remover: water = 1:50.

[0039] Among them, in order to achieve the dewaxing effect without introducing other impurities into the silicon wafer, the dewaxing agent concentrations of slots 4 and 5 can be set to be different, that is, the dewaxing agent concentration of slot 4 is higher and the dewaxing agent concentration of slot 5 is lower, so as to achieve better dewaxing effect while avoiding waste of agents and the introduction of other impurities.

[0040] In one embodiment, the temperature of the wax remover in tanks 4 and 5 is 40°C.

[0041] In this solution, the temperature of the two chemical baths can be controlled to be 40° C. The two baths are provided to remove the polishing wax on the surface of the silicon wafer after polishing.

[0042] In this scheme, slots 4 and 5 are changed from pure water slots to dewaxing agent slots. The concentration of slot 4 is dewaxing agent: water = 1:30, and the concentration of slot 5 is dewaxing agent: water = 1:50; the cleaning temperature of the two liquid tanks is 40°C. The purpose of setting these two slots is to remove the polishing wax on the surface of the silicon wafer after polishing. Since the silicon wafer enters slot 4 first, the concentration of the dewaxing agent in slot 4 is set to be higher. After the initial cleaning in slot 4, the wax on the surface of the silicon wafer is reduced, so the concentration of slot 5 can be slightly reduced for cleaning. After the wax covering the surface of the silicon wafer is effectively pre-removed, the surface particles no longer show a clustering pattern due to the adhesion of the wax, but become dispersed, thereby effectively improving the particle cleaning effect of the SC-1 liquid.

[0043] In one embodiment, adjusting the amount of cleaning solution in each slot and adjusting the arrangement order of each slot to obtain a new cleaning order includes:

[0044] Move the tank containing HF cleaning solution backward to obtain a new cleaning sequence.

[0045] Among them, since in the existing cleaning sequence, the problem of residual metal on the silicon wafer, such as a high concentration of Al, can be detected, therefore, this solution can adjust the arrangement order of each slot to obtain a new cleaning sequence.

[0046] In one embodiment, the tank containing the HF cleaning solution is moved backward to obtain a new cleaning sequence, including:

[0047] The cleaning solutions for tanks 6, 7, 8, 9, 10, 11, 12 and 13 are determined as DIW, SC-1, SC-1, DIW, SC-1, SC-1, DIW and HF respectively.

[0048] In this scheme, the DHF in slot 6 is moved to slot 13 for cleaning. When cleaning silicon wafers, metal contamination should be removed last, while the original process condition is to use DHF to remove metal first. The limitation of this process is that the surface of the silicon wafer is covered with polishing wax and particles after polishing. At this time, DHF is not effective in removing metals, and there is metal accumulation in the SC-1 solution tank. There will be certain metal contamination after the silicon wafer passes through, and there is no subsequent solution to remove the metal again. By moving DHF to slot 13, after the silicon wafer is fully pre-cleaned with the dewaxing agent and SC-1 solution, DHF is in more complete contact with the silicon wafer, and the contamination of the silicon wafer surface by the SC-1 solution tank can be cleaned at the same time, obtaining metal Al on the surface of the silicon wafer <1 (E10Atoms / cm 2 ) of clean silicon wafers.

[0049] In one embodiment, in the new cleaning sequence, the cleaning solutions in tanks 1, 2, 3, and 14 are all determined to be DIW.

[0050] Among them, DIW (deionized water) in silicon wafer cleaning plays a vital role in semiconductor manufacturing. The main functions of DIW include cleaning the surface of silicon wafers, removing residual cleaning liquid, and reducing the impact of static electricity on silicon wafers.

[0051] When cleaning the surface of silicon wafers, D IW removes the conductive ions in the water, making it almost non-conductive, thereby reducing damage to the silicon wafer during the cleaning process. Tools such as rollers, brushes or nozzles are used to remove foreign particles from the surface of the silicon wafer1.

[0052] After other cleaning solutions have cleaned the silicon wafer surface, D IW is used to remove the residual cleaning solution. Although these cleaning solutions will not corrode the silicon wafer in a short period of time, they will still damage the silicon wafer surface if they remain on the surface for a long time, affecting the final performance of the device1.

[0053] To reduce the impact of static electricity, the cleaning process of D IW is more demanding in advanced semiconductor manufacturing. In order to increase conductivity without contaminating silicon wafers, carbon dioxide gas is usually mixed into D IW. In some cases, ammonia gas (NH3)1 is also mixed.

[0054] After silicon nitride (oxy) wet etching, DIW cleaning is a very important step. After hot phosphoric acid etching, the chip is generally cleaned with hot deionized water. When the chip enters the water tank from the high-temperature phosphoric acid tank, the viscosity of the residual phosphoric acid on the surface increases, forming a thin layer of phosphoric acid and by-products. If this layer of residual material is not cleaned, it will seriously affect the subsequent process of the chip, resulting in a loss of yield and reliability problems.

[0055] In summary, D IW plays an indispensable role in the silicon wafer cleaning process in semiconductor manufacturing, and its application is not limited to simple decontamination, but also includes reducing the impact of static electricity and improving cleaning efficiency to ensure high-quality semiconductor product production.

[0056] Figure 2 A schematic diagram of the liquid sequence of the original dewaxing and cleaning process provided according to some embodiments of the present application. Figure 3 Schematic diagram of the liquid sequence of the new wax removal and cleaning process provided according to some embodiments of the present application. Figure 2 and Figure 3 As shown, the 4th and 5th pure water tanks are changed to dewaxing tanks, the concentration of 4th tank is dewaxing agent: water = 1:30, and the concentration of 5th tank is dewaxing agent: water = 1:50; the cleaning temperature of the two liquid tanks is 40°C. The purpose of setting these two tanks is to remove the polishing wax on the surface of the silicon wafer after polishing. Since the silicon wafer enters the 4th tank first, the concentration of the dewaxing agent in the 4th tank is set to be higher. After the preliminary cleaning of the 4th tank, the wax on the surface of the silicon wafer is reduced, so the concentration of the 5th tank can be slightly reduced for cleaning. After the wax covering the surface of the silicon wafer is effectively pre-removed, the surface particles no longer show a clustering pattern due to the adhesion of the wax, but become dispersed, thereby effectively improving the particle cleaning effect of the SC-1 liquid.

[0057] In addition, the DHF in tank 6 is moved to tank 13 for cleaning. As mentioned above, metal contamination should be removed last when cleaning silicon wafers, but the original process conditions are to use DHF to remove metal first. The limitation of this process is that the surface of the silicon wafer is covered with polishing wax and particles after polishing. At this time, the effect of DHF in removing metal is not good, and there is metal accumulation in the SC-1 solution tank. There will be a certain amount of metal contamination after the silicon wafer passes through, and there is no subsequent solution to remove the metal again. By moving the DHF to tank 13, after the silicon wafer is fully pre-cleaned with the dewaxing agent and SC-1 solution, the DHF and the silicon wafer are in more complete contact, and the contamination of the silicon wafer surface by the SC-1 solution tank can be cleaned at the same time, and the metal Al on the silicon wafer surface is obtained. <1 (E10Atoms / cm 2 ) of clean silicon wafers.

[0058] The technical solution provided in this embodiment is to introduce a slot for weighing the dewaxing agent in the dewaxing and cleaning process; adjust the weighing of the cleaning solution in each slot, and adjust the arrangement order of each slot to obtain a new cleaning order; and clean the silicon wafer according to the new cleaning order. By adopting this solution, the dewaxing agent can be introduced into the original dewaxing and cleaning process, so as to reduce the amount of solution and solve the problem of wax residue to improve the particle level on the surface of the silicon wafer. At the same time, by adjusting the cleaning solution order of the original cleaning process, the metal removal ability of the silicon wafer surface is improved, and the problem of high Al after the original process of dewaxing and cleaning is improved, so as to comprehensively improve the cleaning effect of the silicon wafer.

[0059] In order to more clearly introduce the effect of this scheme, this scheme also provides relevant experimental methods, as shown below:

[0060] The silicon wafers with wax residue after polishing were divided into the following three groups for experiments to measure the particle and metal levels on the silicon wafer surface:

[0061]

[0062]

[0063] Figure 4 A schematic diagram showing experimental result data provided in this embodiment. Figure 5 A schematic diagram for displaying another experimental result data provided in this embodiment. Figure 6 A schematic diagram for displaying another experimental result data provided in this embodiment.

[0064] The experimental results are as follows:

[0065] From the particle data measured by SP-1, we can know that:

[0066] The cleaning effects of particles of different particle sizes are: experimental group 2> experimental group 1> control group, that is, the use of a wax remover has a certain effect on removing wax residues, and the removal effect is better when the particles are heated to an appropriate temperature (40°C).

[0067] From the metal data determined by I CP-MS, we can see that:

[0068] Comparison between Experimental Groups 1 and 3: The SC-1 chemical bath has metal accumulation problems, and the metal value drops by 4.5 when the chemical bath is skipped. However, when the improved process is used for cleaning (Experimental Group 2), the metal Al level can be reduced to 0.4, indicating that the improved process can effectively remove metal contamination from the silicon wafer surface from the previous process and the chemical bath cleaning.

[0069] In summary, the newly developed process is a dewaxing and cleaning process that can simultaneously improve the clustered particles caused by wax residue on the surface of silicon wafers and effectively reduce the metal level on the surface of silicon wafers, providing new ideas for the cleaning method of silicon wafers after polishing.

[0070] The technical solution provided in this embodiment follows the basic principle of silicon wafer cleaning: first remove organic contamination, then remove the oxide layer, and finally remove alkaline metal contamination and surface particle contamination. A dewaxing agent is introduced into the original dewaxing cleaning process, and the concentration gradient and temperature are adjusted to reduce the amount of liquid and solve the problem of wax residue to improve the particle level on the surface of the silicon wafer. By adjusting the cleaning liquid sequence of the original cleaning process, the metal removal ability of the silicon wafer surface is improved, and the problem of high Al after dewaxing cleaning in the original process is improved.

[0071] Second embodiment

[0072] The second embodiment of the present application relates to a device for performing the wax removal and cleaning process of the silicon wafer surface as described in the above embodiments.

[0073] It can be understood that the equipment protected by this scheme has the corresponding beneficial effects of the above-mentioned dewaxing and cleaning process method for the surface of the silicon wafer, which will not be described in detail here.

[0074] Third embodiment

[0075] The third embodiment of the present application relates to a silicon wafer, which is obtained by using the wax removal and cleaning process for the surface of the silicon wafer as described in the above embodiments.

[0076] It can be understood that the silicon wafer protected by this solution has the corresponding beneficial effects of the above-mentioned dewaxing and cleaning process method for the silicon wafer surface, which will not be described in detail here.

[0077] In addition, some embodiments of the present application also provide an electronic device. The electronic device may be a digital computer in various forms, such as a laptop computer, a desktop computer, a workbench, a personal digital assistant, a server, a blade server, a mainframe computer, etc. The electronic device may also be a mobile device in various forms, such as a personal digital assistant, a cellular phone, a smart phone, a wearable device, and other similar computing devices.

[0078] The electronic device includes: one or more processors; and a memory storing computer program instructions, wherein when the computer program instructions are executed, the processor executes the steps of the method provided in any one or more of the above embodiments. Figure 7 An exemplary structural diagram of the electronic device is disclosed. Figure 7As shown, the electronic device includes: one or more processors 701, memory 702, and interfaces for connecting various components, including high-speed interfaces and low-speed interfaces. The various components are connected to each other using different buses, and can be installed on a common mainboard or installed in other ways as needed. The processor can process instructions executed in the electronic device, including instructions stored in or on the memory to display the graphical information of the GUI on an external input / output device (such as a display device coupled to the interface). In some other embodiments, if necessary, multiple processors and / or multiple buses can be used together with multiple memories and multiple memories. Similarly, multiple electronic devices can be connected, and each device provides some necessary operations (for example, as a server array, a group of blade servers, or a multi-processor system). Among them, the components shown in this article, their connections and relationships, and their functions are only used as examples, and are not intended to limit the implementation of the present application described and / or required herein.

[0079] The electronic device may further include: an input device 703 and an output device 704. The processor 701, the memory 702, the input device 703 and the output device 704 may be connected via a bus or other means. Figure 7 The example of connecting through bus is taken in the following.

[0080] The input device 703 can receive input digital or character information, and generate key signal input related to the user settings and function control of the electronic device, such as a touch screen, a keypad, a mouse, a track pad, a touch pad, an indicator bar, one or more mouse buttons, a trackball, a joystick and other input devices. The output device 704 may include a display device, an auxiliary lighting device (e.g., an LED) and a tactile feedback device (e.g., a vibration motor), etc. The display device may include, but is not limited to, a liquid crystal display (LCD), a light emitting diode (LED) display and a plasma display. In some embodiments, the display device may be a touch screen.

[0081] To provide interaction with a user, the electronic device may be a computer. The computer has: a display device (e.g., a CRT (cathode ray tube) or LCD (liquid crystal display) monitor) for displaying information to the user; and a keyboard and a pointing device (e.g., a mouse or a trackball), through which the user can provide input to the computer. Other types of devices may also be used to provide interaction with the user; for example, the feedback provided to the user may be any form of sensory feedback (e.g., visual feedback, auditory feedback, or tactile feedback); and input from the user may be received in any form (including acoustic input, voice input, or tactile input).

[0082] In the embodiments of the present application, a computer program / instruction is stored on a computer-readable medium, and when the computer program / instruction is executed by a processor, the steps of the method provided by any one or more of the above embodiments are implemented. The computer-readable medium may be included in the electronic device described in the above embodiments; or it may exist independently without being assembled into the device. The above computer-readable medium carries one or more computer-readable instructions.

[0083] The memory 702 can be used as a non-transient computer-readable storage medium, which can be used to store non-transient software programs, non-transient computer executable programs and modules. The processor 701 executes various functional applications and data processing of the server by running the non-transient software programs, instructions and modules stored in the memory 702, so as to implement the program instructions / modules corresponding to the method provided by any one or more of the above embodiments in the embodiments of the present application.

[0084] The memory 702 may include a program storage area and a data storage area, wherein the program storage area may store an operating system, an application required for at least one function; the data storage area may store data created according to the use of the electronic device, etc. In addition, the memory 702 may include a high-speed random access memory, and may also include a non-transient memory, such as at least one disk storage device, a flash memory device, or other non-transient solid-state storage devices. In some embodiments, the memory 702 may optionally include a memory remotely arranged relative to the processor 701, and these remote memories may be connected to the electronic device via a network. Examples of the above-mentioned network include, but are not limited to, the Internet, an intranet, a local area network, a mobile communication network, and combinations thereof.

[0085] It should be noted that the computer-readable medium described in the present application may be a computer-readable signal medium or a computer-readable storage medium or any combination of the above two. The computer-readable medium may be, for example, but not limited to, an electrical, magnetic, optical, electromagnetic, infrared or semiconductor system, device or device, or any combination of the above. More specific examples of computer-readable storage media may include, but are not limited to: an electrical connection with one or more wires, a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the above. In the present application, a computer-readable medium may be any tangible medium containing or storing a program that can be used by or in combination with an instruction execution system, device or device.

[0086] Computer readable media include permanent and non-permanent, removable and non-removable media, and can be implemented by any method or technology to store information. Information can be computer readable instructions, data structures, modules of programs or other data. Examples of computer storage media include, but are not limited to, phase change memory (PRAM), static random access memory (SRAM), dynamic random access memory (DRAM), other types of random access memory (RAM), read-only memory (ROM), electrically erasable programmable read-only memory (EEPROM), flash memory or other memory technology, read-only compact disk (CD-ROM), digital versatile disk (DVD) or other optical storage, magnetic cassettes, magnetic tape disk storage or other magnetic storage devices or any other non-transmission medium that can be used to store information that can be accessed by a computing device.

[0087] Computer program code for performing the operations of the present application may be written in one or more programming languages ​​or a combination thereof, including object-oriented programming languages, such as Java, Smalltalk, C++, and conventional procedural programming languages, such as "C" language or similar programming languages. The program code may be executed entirely on the user's computer, partially on the user's computer, as an independent software package, partially on the user's computer and partially on a remote computer, or entirely on a remote computer or server. In the case of a remote computer, the remote computer may be connected to the user's computer via any type of network, including a local area network (LAN) or a wide area network (WAN), or may be connected to an external computer (e.g., using an Internet service provider to connect via the Internet).

[0088] In the above-described embodiments, it can be implemented in whole or in part by software, hardware, firmware or any combination thereof. For example, it can be implemented by using an application specific integrated circuit (ASIC), a general-purpose computer or any other similar hardware device. In certain embodiments, the software program of the present application can be executed by a processor to implement the above steps or functions. Similarly, the software program of the present application (including relevant data structures) can be stored in a computer-readable recording medium, for example, a RAM memory, a magnetic or optical drive or a floppy disk and similar devices. In addition, some steps or functions of the present application can be implemented by hardware, for example, as a circuit that cooperates with a processor to perform each step or function.

[0089] The computer program product provided in the embodiment of the present application includes one or more computer programs / instructions, and when the computer program / instructions are executed by the processor, the process or function described in the embodiment of the present application is generated in whole or in part. The computer may be a general-purpose computer, a special-purpose computer, a computer network, or other programmable devices. The computer instructions may be stored in a computer-readable storage medium, or transmitted from one computer-readable storage medium to another computer-readable storage medium, for example, the computer instructions may be transmitted from a website site, a computer, a server or a data center by wired (e.g., coaxial cable, optical fiber, digital subscriber line (DSL)) or wireless (e.g., infrared, wireless, microwave, etc.) mode to another website site, computer, server or data center. The computer-readable storage medium may be any available medium that a computer can access or a data storage device such as a server or a data center that includes one or more available media integrations. The available medium may be a magnetic medium, (e.g., a floppy disk, a hard disk, a tape), an optical medium (e.g., a DVD), or a semiconductor medium (e.g., a solid-state drive so lid state di sk (SSD)), etc.

[0090] The flow chart or block diagram in the accompanying drawings shows the possible architecture, function and operation of the equipment, method and computer program product according to various embodiments of the present application. In this regard, each box in the flow chart or block diagram can represent a module, a program segment or a part of a code, and the module, the program segment or a part of the code contains one or more executable instructions for realizing the specified logical function. It should also be noted that in some alternative implementations, the functions marked in the box can also occur in a different order from the order marked in the accompanying drawings. For example, two boxes represented in succession can actually be executed substantially in parallel, and they can sometimes be executed in the opposite order, depending on the functions involved. It should also be noted that each box in the block diagram and / or flow chart, and the combination of the boxes in the block diagram and / or flow chart can be implemented with a dedicated system for hardware that performs a specified function or operation, or can be implemented with a combination of dedicated hardware and computer instructions.

[0091] The scope of the present application is defined by the appended claims rather than the above description, and it is intended that all changes that fall within the meaning and scope of the equivalent elements of the claims are included in the present application. Any figure mark in the claims should not be regarded as limiting the claims involved. In addition, it is clear that the word "comprising" does not exclude other units or steps, and the singular does not exclude the plural. Multiple units or devices stated in the device claim may also be implemented by one unit or device through software or hardware. The words "first", "second", etc. are only used to distinguish the description, and do not indicate any particular order, nor can they be understood as indicating or implying relative importance.

[0092] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art can easily mention changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims, and the above embodiments should be regarded as exemplary and non-restrictive.

Claims

1. A dewaxing and cleaning process for a silicon wafer surface, characterized in that: The method comprises: In the dewaxing and cleaning process, a tank for loading dewaxing agent is introduced; Adjust the cleaning solution in each slot and adjust the arrangement order of each slot to obtain a new cleaning order; Clean the silicon wafer according to the new cleaning sequence.

2. The method according to claim 1, characterized in that There are two slots for introducing and loading wax remover, located in slot 4 and slot 5 respectively.

3. The method according to claim 2, characterized in that The concentration of the dewaxing agent in the four tanks is dewaxing agent: water = 1:30; The concentration of the dewaxing agent in the five tanks is dewaxing agent: water = 1:

50.

4. The method according to claim 3, characterized in that: The temperature of the wax remover in the 4th tank and the 5th tank is 40°C.

5. The method according to claim 1, characterized in that Adjust the cleaning solution in each slot and the arrangement order of each slot to obtain a new cleaning order, including: Move the tank containing HF cleaning solution backward to obtain a new cleaning sequence.

6. The method according to claim 5, characterized in that Move the tank containing HF cleaning solution backward to obtain a new cleaning sequence, including: The cleaning solutions for tanks 6, 7, 8, 9, 10, 11, 12 and 13 are determined as DIW, SC-1, SC-1, DIW, SC-1, SC-1, DIW and HF respectively.

7. The method according to claim 6, characterized in that In the new cleaning sequence, the cleaning liquids for tanks 1, 2, 3, and 14 are all determined to be DIW.

8. A device, characterized in that The device is used to perform the dewaxing and cleaning process method for the surface of a silicon wafer as described in any one of claims 1 to 7.

9. A silicon wafer, characterized in that: The silicon wafer is obtained by using the dewaxing and cleaning process for the surface of the silicon wafer as described in any one of claims 1 to 7.

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