Photoelectric device and preparation method thereof

Abstract

The invention relates to the field of photoelectricity, in particular to a photoelectric device and a preparation method thereof. The photoelectric device comprises a first electrode layer, an organic layer and a second electrode layer which are laminated on a substrate; materials of the organic layer comprise a main material and a benzotriazole ultraviolet absorbent, compatibility of the benzotriazole ultraviolet absorbent and the main material is good, the doping process does not cause adverse effects on the morphology of the organic layer, and due to the fact that the benzotriazole ultraviolet absorbent has a good conjugated structure, the organic layer can be doped with the benzotriazole ultraviolet absorbent. The absorbent is also helpful for promoting ordered accumulation of organic conjugated molecules in an organic layer, enhancing the crystallinity and optimizing the phase separation morphology, so that the photodegradation of a film layer is inhibited, and the performance of a device is improved.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to an optoelectronic device and a method for preparing the same. Background Art

[0002] At present, due to the long-term exposure of optoelectronic devices to light and heat, the structure, morphological order, film morphology, etc. of organic molecules in the optoelectronic devices will be strongly affected, which in turn affects the life and operational stability of the optoelectronic devices. For example, under light, ultraviolet rays inevitably accelerate the molecular decay rate in the optoelectronic devices, shortening the service life and luminescence stability of the optoelectronic devices, resulting in the problem of short service life of existing optoelectronic devices. Summary of the invention

[0003] The technical problem to be solved by the embodiments of the present application is that the service life of existing optoelectronic devices is relatively short.

[0004] In order to solve the above technical problems, the present application provides an optoelectronic device, which adopts the following technical solution:

[0005] A photoelectric device, comprising:

[0006] A first electrode layer, an organic layer, and a second electrode layer are stacked on a substrate;

[0007] The material of the organic layer includes a main material and a benzotriazole ultraviolet absorber, and the main material is a photoelectric conversion material or a carrier functional material.

[0008] In order to solve the above technical problems, the present application also provides a method for preparing an optoelectronic device, which adopts the following technical solution:

[0009] A method for preparing a photoelectric device, the method comprising:

[0010] preparing a first electrode layer on a substrate;

[0011] Providing an organic mixed solution, and using the organic mixed solution to prepare an organic layer on the first electrode layer; wherein the material of the organic mixed solution includes a main material and a benzotriazole ultraviolet absorber, and the main material is a photoelectric conversion material or a carrier functional material;

[0012] The photoelectric conversion materials include photosensitive materials (photo-electric) in photovoltaic devices and luminescent materials (electric-optic) in light-emitting devices;

[0013] A second electrode layer is prepared on the organic layer to obtain the photoelectric device.

[0014] Compared with the prior art, the embodiments of the present application have the following beneficial effects:

[0015] In the present application, a benzotriazole ultraviolet absorber is doped into the main material as the material of the organic layer, so that the organic layer can absorb ultraviolet rays and effectively inhibit the free radical chain oxidation of the main material in the film layer induced by ultraviolet radiation, thereby inhibiting the photodegradation of the film layer and improving the service life of the device. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to more clearly illustrate the scheme of the present application, a brief introduction is given below to the drawings required for use in the description of the embodiments. Obviously, the drawings described below are some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0017] Figure 1 is a schematic structural diagram of an optoelectronic device provided by an embodiment of the present application;

[0018] Figure 2 is a schematic structural diagram of a photovoltaic device provided by an embodiment of the present application;

[0019] Figure 3 is a schematic structural diagram of an optoelectronic device provided by an embodiment of the present application, which is an organic electroluminescent device;

[0020] Figure 4 This is a schematic diagram of the structure of a quantum dot light-emitting device provided by an embodiment of the present application;

[0021] Figure 5 It is a schematic flow chart of a method for preparing a photoelectric device provided by an embodiment of the present application;

[0022] Reference numerals:

[0023] 100, substrate; 200, first electrode layer; 300, organic layer; 400, second electrode layer; 310, first electronic functional layer; 320, photoactive layer; 330, first hole functional layer; 340, second electronic functional layer; 350, organic light-emitting layer; 360, second hole functional layer; 370, third electronic functional layer; 380, third hole functional layer; 390, quantum dot light-emitting layer; 400, second electrode layer. DETAILED DESCRIPTION

[0024] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by technicians in the technical field of this application; the terms used in the specification of the application herein are only for the purpose of describing specific embodiments and are not intended to limit this application; the terms "including" and "having" and any variations thereof in the specification and claims of this application and the above-mentioned drawings are intended to cover non-exclusive inclusions. The terms "first", "second", etc. in the specification and claims of this application or the above-mentioned drawings are used to distinguish different objects, not to describe a specific order.

[0025] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0026] In the present invention, "substituted" means that the atoms in the substituted group are replaced by substituents. And the term "substituted or unsubstituted" in the present invention means that the event or environment described later can but does not have to occur, and the description includes occasions where the event or environment occurs or does not occur. For example, "substituted or unsubstituted aryl" means that the atoms on the aryl group can be further substituted or unsubstituted.

[0027] See also Figure 1 An embodiment of the present application provides a photoelectric device, which includes: a first electrode layer 200 , an organic layer 300 , and a second electrode layer 400 stacked on a substrate 100 .

[0028] The material of the organic layer 300 includes a main material and a benzotriazole ultraviolet absorber, and the main material is a photoelectric conversion material or a carrier functional material.

[0029] It can be understood that in this embodiment, benzotriazole ultraviolet absorbers are doped into the main material as the material of the organic layer 300. Since benzotriazole ultraviolet absorbers have strong absorption of ultraviolet light in the wavelength range of 300-380nm, but almost do not absorb visible light with a wavelength of 380-780nm, and have good photostability and high physicochemical stability, the organic layer 300 can absorb ultraviolet rays and effectively inhibit the free radical chain oxidation induced by ultraviolet radiation of the main material in the film layer, thereby inhibiting the photodegradation of the film layer and improving the service life of the device.

[0030] In addition, benzotriazole ultraviolet absorbers can also improve the morphology of the film layer, thereby improving the performance of the device: since benzotriazole ultraviolet absorbers have a good conjugated structure, after the organic layer 300 is doped with benzotriazole ultraviolet absorbers, the benzotriazole ultraviolet absorbers can also help promote the orderly stacking of the organic conjugated molecules of the main material in the film layer, enhance its crystallinity and optimize the phase separation morphology, thereby improving the device performance.

[0031] The optoelectronic device described in this embodiment can be a photovoltaic device, an organic electroluminescent device or a quantum dot light-emitting device. For ease of understanding, the following technical solutions for the optoelectronic devices being photovoltaic devices, organic electroluminescent devices and quantum dot light-emitting devices are clearly and completely described.

[0032] (1) See Figure 2 When the photoelectric device is a photovoltaic device, the photovoltaic device includes a first electronic functional layer 310, a photoactive layer 320 and a first hole functional layer 330; wherein at least one of the first electronic functional layer 310, the photoactive layer 320 and the first hole functional layer 330 is doped with the benzotriazole ultraviolet absorber, and the first electronic functional layer 310 / photoactive layer 320 / first hole functional layer 330 doped with the benzotriazole ultraviolet absorber are respectively used as the organic layer 300.

[0033] It can be understood that: ① when the first electronic functional layer 310 is doped with a benzotriazole ultraviolet absorber, the main material is a carrier functional material, and the carrier functional material is an electronic functional material used to prepare the first electronic functional layer 310; ② when the photoactive layer 320 is doped with a benzotriazole ultraviolet absorber, the main material is a photoelectric conversion material used to prepare the photoactive layer 320, and the photoelectric conversion material is a photosensitive material, and the photosensitive material includes a P-type material and / or an N-type material; ③ when the first hole functional layer 330 is doped with a benzotriazole ultraviolet absorber, the main material is a carrier functional material, and the carrier functional material is a hole functional material used to prepare the first hole functional layer 330.

[0034] In some embodiments, the electronic functional material is an electron transport material or an electron injection material. The electron transport material and the electron injection material are independently selected from one or more of quinoxaline compounds, imidazole compounds, triazine compounds, fluorene compounds, hydroxyquinoline compounds, polythiophene compounds, perylene imide compounds, and fullerene compounds. Among them: the fluorene compounds include one or more of WPF-oxy-F, WPF-6-oxy-F, PF-EP, PFNBr, PFSO3Na, PFBTBr, 3TPA-FEP, PF-NS, PF-N-SOC8, FFiF, FPF, ZnO:PFN, PmP-NOH, PmP36F-NOH, PFBD, PEI:PF1, FCF, PF15-b-PDMAEMA75; the polythiophene compounds include P3HTN, PT3SB, P One or more of T2BTDPPSB, PT2NDISB, PT6N, PBTAZPOBr, PCPDTTPD-Im; the perylene imide compounds include one or more of PDINO, PDIP, PBI-H, FPDI, PDIN, PTCDI-C8; the fullerene compounds include one or more of DMAPA-C60, C60-ETA, C60-PEG, rGO-pyrene-PCBM, FPI-PEIE, Fullerenol.

[0035] In some embodiments, the P-type material is selected from at least one of polythiophene and its derivatives, polypyrrole and its derivatives, pyrazoline derivatives, aromatic amine derivatives, triphenyldiamine derivatives, oligothiophene and its derivatives, polyvinylcarbazole and its derivatives, polysilane and its derivatives, aromatic polysiloxane derivatives, polyaniline and its derivatives, phthalocyanine derivatives, porphyrin and its derivatives, polyphenylene vinylene and its derivatives, and polythiophenylene vinylene and its derivatives.

[0036] In some embodiments, the N-type material is selected from at least one of fullerene and its derivatives, non-fullerene small molecule receptors, and non-fullerene polymer receptor materials.

[0037] Understandably, in the prior art, compared with the first electron functional layer 310 and the first hole functional layer 330, the photoactive layer 320 is most sensitive to ultraviolet light and is easily damaged by it. Based on this, the present embodiment uses a benzotriazole ultraviolet absorber to dope the photosensitive material in the photoactive layer 320 to reduce the damage caused by ultraviolet light, and the benzotriazole ultraviolet absorber has good compatibility with organic molecules (P-type materials and N-type materials). The doping amount of the benzotriazole ultraviolet absorber in the main material is 1wt%-10wt%, which can avoid the adverse effects of doping the benzotriazole ultraviolet absorber on the photoactive layer 320.

[0038] In this embodiment, further, in the photoactive layer 320, the mass ratio of the P-type material to the N-type material is (1-50): (1-50).

[0039] Optionally, the mass ratio of the P-type material to the N-type material is selected from the range formed by any one or any two of 1:50, 1:40, 1:30, 1:20, 1:10, 10:50, 10:40, 10:30, 10:20, 10:1, 20:50, 20:40, 20:30, 20:10, 20:1, 30:50, 30:40, 30:20, 30:10, 30:1, 40:50, 40:30, 40:20, 40:10, 40:1, 50:40, 50:30, 50:20, 50:10, 50:1, and 1:1.

[0040] In some embodiments, the hole functional material is a hole injection material or a hole transport material, and the hole transport material and the hole injection material are independently selected from at least one of TFB, CuPc, PVK, Poly-TPD, PFB, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT:PSS, TAPC, MCC, F4-TCNQ, HATCN, 4,4',4'-tri(N-3-methylphenyl-Nphenylamino)triphenylamine, polyaniline, transition metal oxides, transition metal sulfides, transition metal tinides, doped graphene, undoped graphene and C60.

[0041] In the photovoltaic device, the benzotriazole ultraviolet absorber can be used as a doping material, and is doped in one or more layers of the first electronic functional layer 310, the photoactive layer 320, and the first hole functional layer 330. Since the benzotriazole ultraviolet absorber has good light stability, high physical and chemical stability, and high compatibility with the main material, directly using it as the material of the first electronic functional layer 310, the photoactive layer 320, and the first hole functional layer 330 will not only not affect the photoelectric performance of the film layer in which it is located, but also improve the stability of the film layer in which it is located. While absorbing ultraviolet rays, it will not absorb visible light, and can avoid the decomposition of molecules in the film layer and other film layers located on the side of the film layer far from the ultraviolet source, thereby improving the life of the photovoltaic device.

[0042] (2) See Figure 3When the optoelectronic device is an organic electroluminescent device, the organic electroluminescent device includes a second electronic functional layer 340, an organic light-emitting layer 350 and a second hole functional layer 360, at least one of the second electronic functional layer 340, the organic light-emitting layer 350 and the second hole functional layer 360 is doped with a benzotriazole ultraviolet absorber, and the second electronic functional layer 340 / organic light-emitting layer 350 / second hole functional layer 360 doped with the benzotriazole ultraviolet absorber are respectively used as the organic layer 300.

[0043] It can be understood that ① when the second electronic functional layer 340 is doped with a benzotriazole ultraviolet absorber, the main material is a carrier functional material, and the carrier functional material is an electronic functional material for preparing the second electronic functional layer 340; ② when the organic light-emitting layer 350 is doped with a benzotriazole ultraviolet absorber, the main material is a photoelectric conversion material, and the photoelectric conversion material is a light-emitting material for preparing the organic light-emitting layer 350; ③ when the second hole functional layer 360 is doped with a benzotriazole ultraviolet absorber, the main material is a carrier functional material, and the carrier functional material is a hole functional material for preparing the second hole functional layer 360.

[0044] In this embodiment, the range of materials that can be selected in the electron functional material and the hole functional material in the organic electroluminescent device is the same as that of the photovoltaic device, and no further description is given here. The only difference from the photovoltaic device is that the film layer disposed between the second electron functional layer 340 and the second hole functional layer 360 in the organic electroluminescent device is the organic light-emitting layer 350.

[0045] In some embodiments, the light-emitting material of the organic light-emitting layer 350 is selected from at least one of 4,4'-bis(N-carbazole)-1,1'-biphenyl:tris[2-(p-tolyl)pyridine-C2,N)iridium(III), 4,4',4"-tri(carbazole-9-yl)triphenylamine:tris[2-(p-tolyl)pyridine-C2,N)iridium, diaromatic anthracene derivatives, distyrene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials and DBP fluorescent materials, polyacetylene and its derivatives, polyparaphenylene and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives.

[0046] It can be understood that in an organic electroluminescent device, a benzotriazole ultraviolet absorber can be used as a doping material and is doped in one or more layers of the second electronic functional layer 340, the organic light-emitting layer 350, and the second hole functional layer 360. Since the benzotriazole ultraviolet absorber has good light stability, high physical and chemical stability, and high compatibility with the main material, directly using it as the material of the second electronic functional layer 340, the organic light-emitting layer 350, and the second hole functional layer 360 will not only not affect the photoelectric performance of the film layer in which it is located, but also improve the stability of the film layer in which it is located. While absorbing ultraviolet rays, it will not absorb visible light, and can prevent the molecules of the film layer in which it is located and other film layers located on the side of the film layer far from the ultraviolet source from being decomposed, thereby improving the life of the organic electroluminescent device.

[0047] (3) See Figure 4 When the optoelectronic device is a quantum dot light-emitting device, the quantum dot light-emitting device includes a third electron functional layer 370, a third hole functional layer 380 and a quantum dot light-emitting layer 390, at least one of the third electron functional layer 370 and / or the third hole functional layer 380 is doped with a benzotriazole ultraviolet absorber, and the third electron functional layer 370 / third hole functional layer 380 doped with the benzotriazole ultraviolet absorber is used as the organic layer 300 respectively.

[0048] It can be understood that: ① when the third electron functional layer 370 is doped with a benzotriazole ultraviolet absorber, the main material is a carrier functional material, and the carrier functional material is an electronic functional material used to prepare the third electron functional layer 370; ② when the third hole functional layer 380 is doped with a benzotriazole ultraviolet absorber, the main material is a carrier functional material, and the carrier functional material is a hole functional material used to prepare the third hole functional layer 380.

[0049] In this embodiment, the range of materials that can be selected in the electron functional material and the hole functional material in the quantum dot light emitting device is the same as that of the photovoltaic device, and no further description is given here. The only difference from the photovoltaic device is that the film layer disposed between the third electron functional layer 370 and the third hole functional layer 380 in the quantum dot light emitting device is the quantum dot light emitting layer 390.

[0050] In some embodiments, the material of the quantum dot light-emitting layer 390 includes at least one of a single structure quantum dot and a core-shell structure quantum dot, and the material of the single structure quantum dot, the core material of the core-shell structure quantum dot, and the shell material of the core-shell structure quantum dot are independently selected from at least one of a II-VI group compound, a IV-VI group compound, a III-V group compound, and a I-III-VI group compound, wherein the II-VI group compound is selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, C At least one of dSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, wherein the IV-VI group compound is selected from SnS, SnSe, S At least one of SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe and SnPbSTe, and the III-V group compound is selected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, At least one of AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs or InAlPSb, and the I-III-VI group compound is selected from at least one of CuInS2, CuInSe2 and AgInS2.

[0051] It can be understood that in the quantum dot light-emitting device, the benzotriazole ultraviolet absorber can be used as a doping material, and is doped in the third electronic functional layer 370 and / or the third hole functional layer 380. Since the benzotriazole ultraviolet absorber has good light stability, high physical and chemical stability, and high compatibility with the main material, directly using it as the material of the third electronic functional layer 370 and the third hole functional layer 380 will not only not affect the photoelectric performance of the film layer in which it is located, but also improve the stability of the film layer in which it is located. While absorbing ultraviolet rays, it will not absorb visible light, and can avoid the decomposition of the molecules of the film layer in which it is located and other film layers located on the side of the film layer away from the ultraviolet source, thereby improving the life of the quantum dot light-emitting device.

[0052] For ease of understanding, the technical solution of the benzotriazole ultraviolet absorber is clearly and completely described below.

[0053] In this embodiment, the benzotriazole ultraviolet absorber is a 2-(2-hydroxyphenyl)-2H-benzotriazole compound, and the 2-(2-hydroxyphenyl)-2H-benzotriazole compound has a structure shown in Chemical Formula I:

[0054]

[0055] Wherein, R and R1 are each independently selected from at least one of a hydrogen atom, a halogen atom, a cyano group, a hydroxyl group, a carboxyl group, an aldehyde group, a nitro group, a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C1-C20 alkoxy group, a substituted or unsubstituted C1-C20 acyloxy group, a substituted or unsubstituted C1-C20 alkoxycarbonyl group, a substituted or unsubstituted C6-C20 aryl group, a substituted or unsubstituted C2-C20 alkenyl group, and a substituted or unsubstituted C2-C20 alkynyl group; the substituted substituent is selected from at least one of a halogen atom, a nitro group, a cyano group, a carboxyl group, a hydroxyl group, a C1-C10 alkoxycarbonyl group, a C1-C10 acyloxy group, and a C1-C10 alkyl group; and m and n are each independently selected from any integer from 1 to 4.

[0056] Specifically, the 2-(2-hydroxyphenyl)-2H-benzotriazole compounds used in this embodiment have strong absorption of ultraviolet rays with a wavelength between 300-380nm. Such compounds not only have high absorption efficiency of ultraviolet rays, but also have good stability, are well compatible with the main material, and can enhance the crystallinity of the main material and optimize the phase separation morphology, thereby improving the device performance. The 2-(2-hydroxyphenyl)-2H-benzotriazole compounds can be directly mixed with the main material as the organic layer of the optoelectronic device, without the need for an ultraviolet absorption layer outside the organic layer 300, saving the preparation steps of the optoelectronic device, making the preparation of the optoelectronic device more operable, more convenient, and reducing the production cost.

[0057] In this embodiment, a benzotriazole ultraviolet absorber is doped into the main material as the material of the organic layer 300. Since the benzotriazole ultraviolet absorber has a strong absorption of ultraviolet light in the wavelength range of 300-380nm, but almost does not absorb visible light with a wavelength of 380-780nm, and has good light stability and high physical and chemical stability, the organic layer 300 can absorb ultraviolet rays and effectively inhibit the free radical chain oxidation induced by ultraviolet radiation of the main material in the film layer, thereby inhibiting the photodegradation of the film layer and improving the service life of the device.

[0058] In addition, benzotriazole ultraviolet absorbers can also improve the morphology of the film layer, thereby improving the performance of the device: since benzotriazole ultraviolet absorbers have a good conjugated structure, after the organic layer 300 is doped with benzotriazole ultraviolet absorbers, the benzotriazole ultraviolet absorbers can also help promote the orderly stacking of the organic conjugated molecules of the main material in the film layer, enhance its crystallinity and optimize the phase separation morphology, thereby improving the device performance.

[0059] Optionally, the number of C (carbon) atoms in the substituted or unsubstituted alkyl group is selected from the range formed by any one of 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20 or any two of them.

[0060] Optionally, the number of C (carbon) atoms in the substituted or unsubstituted alkoxy group is selected from the range formed by any one of 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20 or any two of them.

[0061] Optionally, the number of C (carbon) atoms in the substituted or unsubstituted acyloxy group is selected from the range formed by any one of 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, and 20, or any two of them.

[0062] Optionally, the number of C (carbon) atoms in the substituted or unsubstituted alkoxycarbonyl is selected from the range formed by any one of 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20 or any two of them.

[0063] Optionally, the number of C (carbon) atoms in the substituted or unsubstituted aryl group is selected from the range formed by any one of 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20 or any two of them.

[0064] Optionally, the number of C (carbon) atoms in the substituted or unsubstituted alkenyl group is selected from the range formed by any one of 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20 or any two of them.

[0065] Optionally, the number of C (carbon) atoms in the substituted or unsubstituted alkynyl group is selected from the range formed by any one of 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20 or any two of them.

[0066] Optionally, the number of C (carbon) atoms in the alkoxycarbonyl in the substituted substituent is selected from the range formed by any one of 1, 2, 3, 4, 5, 6, 7, 8, 9, 10 or any two of them.

[0067] Optionally, the number of C (carbon) atoms in the acyloxy group in the substituted substituent is selected from the range formed by any one of 1, 2, 3, 4, 5, 6, 7, 8, 9, 10 or any two of them.

[0068] Optionally, the number of C (carbon) atoms in the alkyl group in the substituted substituent is selected from the range formed by any one of 1, 2, 3, 4, 5, 6, 7, 8, 9, 10 or any two of them.

[0069] In this embodiment, the benzotriazole ultraviolet absorber can be selected from one or more of the following compounds:

[0070]

[0071]

[0072] It should be noted that, in the optoelectronic device, when the organic layers doped with benzotriazole ultraviolet absorbers are multiple layers, the benzotriazole ultraviolet absorbers doped in different organic layers can be selected from the same type or different types of compounds mentioned above.

[0073] In some embodiments, the mass ratio of the benzotriazole ultraviolet absorber to the main material is (1-10): (90-99).

[0074] It can be understood that, as a doped heterogeneous molecule, if the weight of the doped benzotriazole ultraviolet absorber is too much, there is a large surface energy difference between the doped benzotriazole ultraviolet absorber molecules and the main material molecules, and a large number of benzotriazole ultraviolet absorber molecules will self-aggregate and separate from the main material molecules, each forming a large molecular domain, which will change the orderly arrangement of the main material molecules, and will have an adverse effect on the accumulation of the host molecules, affecting the film morphology, and the doped molecular domain itself does not have good photoelectric properties. The disordered accumulation of impurity molecules will further hinder charge transfer as impurities, leading to the quenching of charges or excitons, affecting the electrical or photoelectric properties of the film layer, and reducing the device performance. If the weight of the doped benzotriazole ultraviolet absorber is too little, it cannot fully absorb ultraviolet rays and play a role in extending the life of the device.

[0075] In some specific embodiments, the mass ratio of the benzotriazole ultraviolet absorber to the main material is 2:98; or,

[0076] The mass ratio of the benzotriazole ultraviolet absorber to the main material is 5:95; or,

[0077] The mass ratio of the benzotriazole ultraviolet absorber to the main material is 7:93; or,

[0078] The mass ratio of the benzotriazole ultraviolet absorber to the main material is 10:90.

[0079] In the mass ratio of the benzotriazole ultraviolet absorber and the main material provided in this embodiment, the weight percentage of the benzotriazole ultraviolet absorber in the main material is maintained at a doping amount of 1wt%-10%, which can ensure that the film layer itself has ultraviolet absorption ability and improve the service life of the optoelectronic device. At the same time, a small amount (1wt%-10%) of benzotriazole ultraviolet absorber can be doped to promote the orderly stacking of organic conjugated molecules in the film layer, enhance the crystallinity of the main material and optimize the phase separation morphology.

[0080] In this embodiment, the main material includes at least one organic material.

[0081] In some embodiments, the main material includes at least one organic high molecular polymer material.

[0082] It is understandable that when the main material in the film layer contains an organic high molecular polymer material, the organic high molecular polymer material is easily oxidized by free radical chains induced by ultraviolet radiation, which makes it easier to cause photodegradation of the film layer. Benzotriazole ultraviolet absorbers have good compatibility with organic high molecular polymers. After the benzotriazole ultraviolet absorbers are added to the organic high molecular polymer material as doping materials, the benzotriazole ultraviolet absorbers can inhibit the photodegradation of the film layer by absorbing ultraviolet rays and extend the service life of the film layer. At the same time, the doping process will not adversely affect the morphology of the organic layer 300 where the organic high molecular polymer material is located, and can also promote the orderly stacking of organic conjugated molecules in the film layer, thereby improving device performance.

[0083] See also Figure 5 , Figure 5 A schematic flow chart of a method for preparing the above-mentioned optoelectronic device is shown, wherein the method for preparing the above-mentioned optoelectronic device is used to prepare the above-mentioned optoelectronic device; the method comprises:

[0084] S100, preparing a first electrode layer on a substrate;

[0085] S200, providing an organic mixed solution, and using the organic mixed solution to prepare an organic layer on the first electrode layer; wherein the material of the organic mixed solution includes a main material and a benzotriazole ultraviolet absorber, and the main material is a photoelectric conversion material or a carrier functional material;

[0086] S300, preparing a second electrode layer on the organic layer to obtain the photoelectric device.

[0087] Benzotriazole ultraviolet absorbers can be doped into different main materials as doping materials. Benzotriazole ultraviolet absorbers have strong absorption of ultraviolet light in the wavelength range of 300-380nm, but almost do not absorb visible light in the wavelength range of 380-780nm, and have good light stability and high physical and chemical stability. In this embodiment, the benzotriazole ultraviolet absorber absorbs ultraviolet rays, which can effectively inhibit the free radical chain oxidation of the main material in the film layer induced by ultraviolet radiation, thereby inhibiting the photodegradation of the film layer and improving the service life of the device.

[0088] In addition, benzotriazole ultraviolet absorbers can improve the morphology of the organic layer, thereby improving the performance of the device: since benzotriazole ultraviolet absorbers have a good conjugated structure, after the main material is doped with benzotriazole ultraviolet absorbers, the benzotriazole ultraviolet absorbers can also help promote the orderly stacking of the main material molecules in the film layer, enhance its crystallinity and optimize the phase separation morphology, thereby improving the device performance.

[0089] In some embodiments, the optoelectronic device prepared in the present application may be one of a photovoltaic device, an organic electroluminescent device, and a quantum dot light-emitting device. When the photovoltaic device prepared in the present application is a photovoltaic device, the photoelectric conversion material is a photosensitive material, and the main material is a photosensitive material or a carrier functional material; when the organic electroluminescent device prepared in the present application is a photoelectric conversion material, the main material is a carrier functional material or a luminescent material; when the quantum electroluminescent device prepared in the present application is a quantum electroluminescent device, the main material is a carrier functional material.

[0090] In some embodiments, the above step S200, before the step of providing the organic mixed solution, further includes:

[0091] The main material and the benzotriazole ultraviolet absorber are dissolved in an organic solvent, and stirred to obtain the organic mixed solution.

[0092] The organic solvent is used to adjust the stacking order of the organic molecules. The organic solvent in this embodiment is used to dissolve and mix the main material and the benzotriazole ultraviolet absorber. The main material and the benzotriazole ultraviolet absorber can be fully mixed through the combination of the organic solvent to avoid molecular aggregation, simplify the preparation steps, and improve the reliability of the dissolution and mixing process and the preparation efficiency of the organic light-emitting layer.

[0093] In some embodiments, the mass ratio of the benzotriazole ultraviolet absorber to the main material is (1-10): (90-99).

[0094] In some embodiments, the organic solvent is selected from at least one of aromatic hydrocarbon solvents, aliphatic hydrocarbon solvents, alicyclic hydrocarbon solvents, halogenated hydrocarbon solvents, alcohol solvents, ether solvents, ester solvents, ketone solvents, glycol derivative solvents, acetonitrile solvents, pyridine solvents or phenol solvents.

[0095] In some embodiments, the aromatic hydrocarbon solvent includes at least one of benzene, toluene and xylene.

[0096] In some embodiments, the aliphatic hydrocarbon solvent includes at least one of pentane, hexane and octane.

[0097] In some embodiments, the alicyclic hydrocarbon solvent includes at least one of cyclohexane, cyclohexanone, and toluene-cyclohexanone.

[0098] In some embodiments, the halogenated hydrocarbon solvent includes at least one of chlorobenzene, dichlorobenzene and dichloromethane.

[0099] In some embodiments, the alcohol solvent includes at least one of methanol, ethanol and isopropanol.

[0100] In some embodiments, the ether solvent includes at least one of diethyl ether and propylene oxide.

[0101] In some embodiments, the ester solvent includes at least one of methyl acetate, ethyl acetate and propyl acetate.

[0102] In some embodiments, the ketone solvent includes at least one of acetone, methyl butyl ketone and methyl isobutyl ketone.

[0103] In some embodiments, the diol derivative solvent includes at least one of ethylene glycol monomethyl ether, ethylene glycol monoethyl ether and ethylene glycol monobutyl ether.

[0104] In some embodiments, in the above step S200, the step of preparing an organic layer on the first electrode layer using the organic mixed solution includes:

[0105] disposing an organic mixed solution on the first electrode layer by a solution method to obtain an organic liquid film;

[0106] Place the organic liquid film below 1*10 -3 The organic liquid film is stored under a vacuum of 0.0447° C. Pa for 10-180 min to remove the residual solvent, and then the organic liquid film after the residual solvent is removed is placed on a hot stage at 60° C.-150° C. for annealing for 1 min-30 min to form an organic light-emitting layer.

[0107] In some embodiments, the storage time under vacuum can be set to 10, 20, 50, 90, 100, 120, 160, or 180 min.

[0108] In some embodiments, the annealing conditions can be set to anneal on a hot plate at 60°C for 10 minutes, or anneal on a hot plate at 80°C for 8 minutes; anneal on a hot plate at 90°C for 6 minutes; anneal on a hot plate at 120°C for 5 minutes; anneal on a hot plate at 150°C for 5 minutes.

[0109] In some embodiments, the solution method includes but is not limited to at least one of sol-gel method, printing, inkjet printing, spin coating, and coating.

[0110] For ease of understanding, the calculation method of the doping concentration mentioned in the following embodiments and comparative examples is first described. The calculation formula of the doping concentration is:

[0111] A / (A+B);

[0112] Among them, A is a benzotriazole ultraviolet absorber and B is the main material.

[0113] In the following, in conjunction with specific embodiments, the optoelectronic devices in the present invention are further described as photovoltaic devices and light-emitting devices:

[0114] (1) The photoelectric device in the present invention is a photovoltaic device:

[0115] Example 1

[0116] Step 1: Place the patterned ITO substrate in acetone, washing liquid, deionized water and isopropanol for ultrasonic cleaning in order. Each step of the ultrasonic cleaning needs to last for 15 minutes. After the ultrasonic cleaning is completed, place the ITO substrate in a clean oven for drying.

[0117] Step 2: After the ITO substrate is dried, the surface of the ITO substrate is treated with UV-ozone for 5 minutes to further remove organic matter attached to the surface of the ITO substrate and improve the work function of the ITO substrate.

[0118] Step 3: deposit a layer of PEDOT:PSS solution on the ITO substrate treated in step 2 to obtain a hole transport layer with a thickness of 30 nm, and heat the substrate on a heating table at 150° C. for 30 minutes to remove moisture.

[0119] Step 4: Add 1-chloronaphthalene solvent to chloroform to prepare 0.5% volume ratio of 1-chloronaphthalene auxiliary solvent chloroform, and use it as an organic solvent. Dissolve the donor organic molecule PM6, the acceptor organic molecule Y6 and the benzotriazole ultraviolet absorbing material UV329 in the organic solvent at a weight ratio of 0.95:0.95:0.1, and continue stirring for 60 minutes to obtain an organic mixed solution with a UV329 doping concentration of 5wt%.

[0120] Step 5: In a glove box, spin-coat the above organic mixed solution on the hole transport layer, and anneal it on a hot plate at 60° C. for 10 min to form a photoactive layer with a thickness of 100 nm.

[0121] Step 6: Deposit a layer of methanol solution of PNDIT-F3N-Br with a concentration of 1 mg / ml on the above-mentioned photoactive layer to form an electron transport layer with a thickness of 10 nm.

[0122] Step 7: Place the wafer after depositing each functional layer in a vapor deposition chamber and thermally evaporate a 100nm silver layer as a cathode through a mask plate to obtain a photovoltaic device with a photoactive layer doped with 5wt% UV329.

[0123] Embodiment 2:

[0124] The only difference from Example 1 is that: Step 4: Dissolve the donor organic molecule PM6, the acceptor organic molecule Y6 and the benzotriazole ultraviolet absorbing material UV329 in an organic solvent at a weight ratio of 0.9:0.9:0.2, and continue stirring for 60 minutes to obtain an organic mixed solution with a UV329 doping concentration of 10wt%. In step 7, a photovoltaic device with a photoactive layer doped with 10wt% UV329 is finally prepared.

[0125] Embodiment 3:

[0126] The only difference from Example 1 is that: Step 4: Dissolve the donor organic molecule PM6, the acceptor organic molecule Y6 and the benzotriazole ultraviolet absorbing material UV329 in an organic solvent at a weight ratio of 0.99:0.99:0.02, and continue stirring for 60 minutes to obtain an organic mixed solution with a UV329 doping concentration of 1wt%. In step 7, a photovoltaic device with a photoactive layer doped with 1wt% UV329 is finally prepared.

[0127] Embodiment 4:

[0128] The only difference from Example 1 is that: Step 4: Dissolve the donor organic molecule PM6, the acceptor organic molecule Y6 and the benzotriazole ultraviolet absorbing material UV329 in an organic solvent at a weight ratio of 0.8:0.8:0.4, and continue stirring for 60 minutes to obtain an organic mixed solution with a UV329 doping concentration of 20wt%. In step 7, a photovoltaic device with a photoactive layer doped with 20% UV329 is finally prepared.

[0129] Embodiment 5:

[0130] The difference from Example 1 is that: Step 4: dissolve the donor organic molecule PM6, the acceptor organic molecule Y6 and the benzotriazole ultraviolet absorbing material UV327 in an organic solvent at a weight ratio of 0.95:0.95:0.1, and continue stirring for 60 minutes to obtain an organic mixed solution with a UV327 doping concentration of 5wt%. In Step 7, a photovoltaic device with a photoactive layer doped with 5% UV327 is finally prepared.

[0131] Embodiment 6:

[0132] The only difference from Example 1 is that: Step 4: Dissolve the donor organic molecule D18, the acceptor organic molecule BTIC-BO-4Cl and the benzotriazole ultraviolet absorbing material UV329 in an organic solvent at a weight ratio of 0.95:0.95:0.1, and continue stirring for 60 minutes to obtain an organic mixed solution with a UV329 doping concentration of 5wt%. In step 7, a photovoltaic device with a photoactive layer doped with 5% UV329 is finally prepared.

[0133] Embodiment 7:

[0134] The only difference from Example 1 is: Step 4: Dissolve the donor organic molecule PM6 and the acceptor organic molecule Y6 in an organic solvent at a weight ratio of 1:1.2, and continue stirring for 60 minutes to obtain an organic mixed solution without doping with benzotriazole ultraviolet absorber.

[0135] Step 6: Dissolve the organic molecule PNDIT-F3N-Br and the benzotriazole ultraviolet absorbing material UV329 in 1 ml of methanol at a weight ratio of 9 mg:1 mg, and continue stirring for 60 minutes to obtain an organic mixed solution with a UV329 doping concentration of 10 wt%. Deposit the organic mixed solution with a UV329 doping concentration of 10 wt% on the photoactive layer of step 5 to form an N-type layer doped with 10 wt% UV329 with a thickness of 10 nm. In step 7, a photovoltaic device with an electron transport layer doped with 10 wt% UV329 is finally prepared.

[0136] Comparative Example 1:

[0137] The only difference from Example 1 is that: Step 4: Dissolve the donor organic molecule PM6 and the acceptor organic molecule Y6 in an organic solvent at a weight ratio of 1:1, and continue stirring for 60 minutes to obtain an organic mixed solution without doping benzotriazole ultraviolet absorbers. In step 7, a photovoltaic device without doping benzotriazole ultraviolet absorbers is finally prepared.

[0138] Comparative Example 2:

[0139] The only difference from Example 1 is that: Step 4: Dissolve the donor organic molecule D18 and the acceptor organic molecule BTIC-BO-4Cl in chloroform with 0.5% volume ratio of 1-chloronaphthalene as an auxiliary solvent at a weight ratio of 1:1, and continue stirring for 60 minutes to obtain an organic mixed solution without doping benzotriazole ultraviolet absorbers. In step 7, a photovoltaic device without doping benzotriazole ultraviolet absorbers is finally prepared.

[0140] Performance Testing:

[0141] The photovoltaic devices obtained in the above Examples 1 to 7, Comparative Example 1 and Comparative Example 2 were subjected to various performance tests, and the specific test methods are as follows:

[0142] A test system consisting of a solar simulator, a digital source meter, a sample holder, a computer and a standard battery was used to test the PCE (photovoltaic conversion efficiency) and T90 (the time it takes for the PCE to decay to 90% of the maximum value PCE when the device continues to work under the irradiation of a standard sunlight) of the photovoltaic devices obtained in the above Examples 1 to 7, Comparative Example 1 and Comparative Example 2.

[0143] In the test system, the device is continuously irradiated with a sunlight intensity of one sun, and the performance parameters PCE and T90 of the photovoltaic device are recorded by the test system.

[0144] The test results are shown in Table 1:

[0145] Table 1

[0146]

[0147]

[0148] According to Table 1, it can be seen from the results of Examples 1-6 and Comparative Example 1 that adding benzotriazole ultraviolet absorbing materials to the photoactive layer is beneficial to improving the service life of the device and reducing the influence of ultraviolet rays on molecular degradation. The introduction of a certain amount of benzotriazole ultraviolet absorbing materials improves the PCE of the device to a certain extent. This is because the doped molecules have a strong rigid skeleton and strong crystallinity. A small amount of doping helps to improve the overall crystallinity of the photoactive layer, improve its stacking order, and optimize the intermolecular phase separation, thereby optimizing the optoelectronic properties of the photoactive layer and improving the PCE.

[0149] Furthermore, it can be seen from the results of Examples 1-6 that excessive doping (20 wt %) of benzotriazole ultraviolet absorbing materials will reduce device performance (PCE), but can still improve service life T90.

[0150] It can be seen from the results of Example 7 and Comparative Example 2 that adding benzotriazole ultraviolet absorbing materials to the electron transport layer can also improve the device life.

[0151] It can be seen from the results of Example 2 and Example 7 that the effect of doping the benzotriazole ultraviolet absorbing material in the photoactive layer is better than that of doping it in the electron transport layer in improving the device performance and extending the life.

[0152] (2) The optoelectronic device in the present invention is a light-emitting device:

[0153] Embodiment 8:

[0154] Step 1: Place the patterned ITO substrate in acetone, washing liquid, deionized water and isopropanol for ultrasonic cleaning in order. Each step of the ultrasonic cleaning should last for 15 minutes. After the ultrasonic cleaning is completed, place the ITO substrate in a clean oven for drying.

[0155] Step 2: After the ITO substrate is dried, the surface of the ITO substrate is treated with UV-ozone for 5 minutes to further remove organic matter attached to the surface of the ITO substrate and improve the work function of the ITO substrate.

[0156] Step 3: deposit a layer of PEDOT:PSS solution on the ITO substrate treated in step 2 to obtain a hole transport layer with a thickness of 30 nm, and heat the substrate on a heating table at 150° C. for 30 minutes to remove moisture.

[0157] Step 4: spin-coating an mCP light-emitting layer doped with UV329 on the hole transport layer (the weight ratio of UV329:mCP is 0.1:1.9, i.e., a doping concentration of 5 wt%), and then annealing on a hot plate at 100° C. for 30 min to form a 35 nm thick organic light-emitting layer;

[0158] Step 5: Subsequently, the electron transport layer material TPBi is spin-coated on the light-emitting layer, and then dried at 100° C. for 30 minutes to form an electron transport layer with a thickness of 40 nm.

[0159] Step 6: Finally, Ag is vacuum evaporated on the electron transport layer to form a cathode with a thickness of 100 nm, thereby obtaining an organic electroluminescent device having an organic light-emitting layer doped with 5 wt % of UV329.

[0160] Embodiment 9:

[0161] The only difference from Example 8 is that: Step 4: spin-coat the mCP light-emitting layer doped with UV329 on the hole transport layer (the weight ratio of UV329:mCP is 0.2:1.8, i.e., a doping concentration of 10 wt%), and then anneal on a hot plate at 100°C for 30 minutes to form an organic light-emitting layer with a thickness of 35 nm. Step 6: obtain an organic electroluminescent device without an organic light-emitting layer doped with a benzotriazole ultraviolet absorbing material.

[0162] Comparative Example 3:

[0163] The only difference from Example 8 is: Step 4: spin-coating the mCP light-emitting layer on the hole transport layer, and then annealing on a hot plate at 100° C. for 30 min to form a 35 nm thick organic light-emitting layer. Step 6: obtaining an organic electroluminescent device without an organic light-emitting layer doped with UV329.

[0164] Performance Testing:

[0165] The organic electroluminescent devices obtained in the above-mentioned Example 8, Example 9 and two Comparative Examples 3 were subjected to various performance tests, and the specific test methods are as follows:

[0166] In order to simulate the effect of ultraviolet light or light on the performance and life of the organic electroluminescent device when the organic electroluminescent device is operated in an outdoor environment, the organic electroluminescent devices obtained in Example 8, Example 9 and one of the comparative examples 3 were placed outdoors for 30 days for pretreatment; while the organic electroluminescent device obtained in the other comparative example 3 was stored dry and away from light at room temperature.

[0167] Then, the T95 lifetime (T95@1000nit) of the above-mentioned Example 8, Example 9 and the two comparative examples 3 at a luminous brightness of 1000nit was tested by a lifetime test system, and the maximum current efficiency (CEmax) of the organic electroluminescent devices obtained by testing Example 8, Example 9 and the two comparative examples 3 was tested by an IV-L test system.

[0168] The test results are shown in Table 2:

[0169] Table 2

[0170] Organic electroluminescent devices CEmax(cd / A) T95@1000nit(h) Example 8 8.9 121.5 Example 9 8.4 118.2 Comparative Example 3 without pretreatment 8.5 120.4 Comparative Example 3 after pretreatment 6.1 80.7

[0171] According to Table 2, it can be seen from the two comparative examples 3 that compared with comparative example 3 which was not pretreated (placed indoors), comparative example 3 which was pretreated with outdoor light irradiation had a reduced service life (T95@1000nit) and maximum current efficiency (CEmax) due to the influence of ultraviolet rays on molecular degradation.

[0172] However, in Examples 8 and 9 of the present application, due to the doping of benzotriazole ultraviolet absorbers, the free radical chain oxidation induced by ultraviolet radiation of the main material in the film layer is effectively inhibited, thereby inhibiting the photodegradation of the film layer, improving the service life of the device (T95@1000nit), and promoting the orderly stacking of the organic conjugated molecules of the main material in the film layer, enhancing its crystallinity and optimizing the phase separation morphology, thereby improving the maximum current efficiency (CEmax) of the device, so that the organic electroluminescent device prepared in the present application can be suitable for indoor and outdoor use.

[0173] Obviously, the embodiments described above are only some embodiments of the present application, rather than all embodiments. The preferred embodiments of the present application are given in the accompanying drawings, but they do not limit the patent scope of the present application. The present application can be implemented in many different forms. On the contrary, the purpose of providing these embodiments is to make the understanding of the disclosure of the present application more thorough and comprehensive. Although the present application is described in detail with reference to the aforementioned embodiments, for those skilled in the art, it is still possible to modify the technical solutions recorded in the aforementioned specific implementation methods, or to perform equivalent replacement of some of the technical features therein. Any equivalent structure made using the contents of the specification and drawings of this application, directly or indirectly used in other related technical fields, is similarly within the scope of patent protection of this application.

Claims

1. A photoelectric device, characterized in that: include: A first electrode layer, an organic layer, and a second electrode layer are stacked on a substrate; The material of the organic layer includes a main material and a benzotriazole ultraviolet absorber, and the main material is a photoelectric conversion material or a carrier functional material.

2. The optoelectronic device according to claim 1, characterized in that: The benzotriazole ultraviolet absorber is a 2-(2-hydroxyphenyl)-2H-benzotriazole compound, and the 2-(2-hydroxyphenyl)-2H-benzotriazole compound has a structure shown in Chemical Formula I: Wherein, R and R1 are each independently selected from at least one of a hydrogen atom, a halogen atom, a cyano group, a hydroxyl group, a carboxyl group, an aldehyde group, a nitro group, a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C1-C20 alkoxy group, a substituted or unsubstituted C1-C20 acyloxy group, a substituted or unsubstituted C1-C20 alkoxycarbonyl group, a substituted or unsubstituted C6-C20 aryl group, a substituted or unsubstituted C2-C20 alkenyl group, and a substituted or unsubstituted C2-C20 alkynyl group; The substituted substituent is selected from at least one of a halogen atom, a nitro group, a cyano group, a carboxyl group, a hydroxyl group, a C1-C10 alkoxycarbonyl group, a C1-C10 acyloxy group, and a C1-C10 alkyl group; m and n are each independently selected from any integer of 1 to 4.

3. The optoelectronic device according to claim 2, characterized in that: The R and R1 are each independently selected from at least one of a hydrogen atom, a halogen atom, a cyano group, a hydroxyl group, a carboxyl group, an aldehyde group, a nitro group, a substituted or unsubstituted C6-C15 alkyl group, a substituted or unsubstituted C6-C15 alkoxy group, a substituted or unsubstituted C6-C15 acyloxy group, a substituted or unsubstituted C6-C15 alkoxycarbonyl group, a substituted or unsubstituted C10-C14 aryl group, a substituted or unsubstituted C7-C15 alkenyl group, and a substituted or unsubstituted C7-C15 alkynyl group; and / or, The substituted substituent is selected from at least one of a halogen atom, a nitro group, a cyano group, a carboxyl group, a hydroxyl group, a C3-C8 alkoxycarbonyl group, a C3-C8 acyloxy group, and a C3-C8 alkyl group.

4. The optoelectronic device according to claim 2, characterized in that: The 2-(2-hydroxyphenyl)-2H-benzotriazole compound is selected from one or more of the following compounds:

5. The optoelectronic device according to any one of claims 1 to 4, characterized in that: The mass ratio of the benzotriazole ultraviolet absorber to the main material is (1-10): (90-99); and / or, The main material comprises at least one organic material; and / or, When the optoelectronic device is a photovoltaic device, the photoelectric conversion material is a photosensitive material, and the photosensitive material includes a P-type material and / or an N-type material; and / or, The carrier functional material includes a hole functional material or an electron functional material; and / or, When the optoelectronic device is an organic electroluminescent device, the photoelectric conversion material is a luminescent material, and the luminescent material is selected from at least one of 4,4'-bis(N-carbazole)-1,1'-biphenyl:tris[2-(p-tolyl)pyridine-C2,N)iridium(III), 4,4',4"-tris(carbazole-9-yl)triphenylamine:tris[2-(p-tolyl)pyridine-C2,N)iridium, diaromatic anthracene derivatives, distyrene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials and DBP fluorescent materials, polyacetylene and its derivatives, polyparaphenylene and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives.

6. The optoelectronic device according to claim 5, characterized in that: The mass ratio of the benzotriazole ultraviolet absorber to the main material is (2-7): (93-98); and / or, The P-type material is selected from at least one of polythiophene and its derivatives, polypyrrole and its derivatives, pyrazoline derivatives, aromatic amine derivatives, triphenyldiamine derivatives, oligothiophene and its derivatives, polyvinylcarbazole and its derivatives, polysilane and its derivatives, aromatic polysiloxane derivatives, polyaniline and its derivatives, phthalocyanine derivatives, porphyrin and its derivatives, polyphenylene vinylene and its derivatives, polythienyl vinylene and its derivatives; and / or, The N-type material is selected from at least one of fullerene and its derivatives, non-fullerene small molecule receptors, and non-fullerene polymer receptor materials; and / or, The hole functional material includes a hole injection material and / or a hole transport material, and the hole injection material and the hole transport material are independently selected from at least one of TFB, CuPc, PVK, Poly-TPD, PFB, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT:PSS, TAPC, MCC, F4-TCNQ, HATCN, 4,4',4'-tris(N-3-methylphenyl-Nphenylamino)triphenylamine, polyaniline, transition metal oxides, transition metal sulfides, transition metal tin compounds, doped graphene, undoped graphene and C60; and / or, The electronic functional material includes an electron injection material and / or an electron transport material, and the electron injection material and the electron transport material are independently selected from at least one of quinoxaline compounds, imidazole compounds, triazine compounds, fluorene compounds, hydroxyquinoline compounds, polythiophene compounds, perylene imide compounds, and fullerene compounds.

7. A method for preparing a photoelectric device, characterized in that: The method comprises: preparing a first electrode layer on a substrate; Providing an organic mixed solution, and using the organic mixed solution to prepare an organic layer on the first electrode layer; wherein the material of the organic mixed solution includes a main material and a benzotriazole ultraviolet absorber, and the main material is a photoelectric conversion material or a carrier functional material; A second electrode layer is prepared on the organic layer to obtain the photoelectric device.

8. The method for preparing a photoelectric device according to claim 7, characterized in that: The benzotriazole ultraviolet absorber is a 2-(2-hydroxyphenyl)-2H-benzotriazole compound, and the 2-(2-hydroxyphenyl)-2H-benzotriazole compound has a structure shown in Chemical Formula I: Wherein, R and R1 are each independently selected from at least one of a hydrogen atom, a halogen atom, a cyano group, a hydroxyl group, a carboxyl group, an aldehyde group, a nitro group, a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C1-C20 alkoxy group, a substituted or unsubstituted C1-C20 acyloxy group, a substituted or unsubstituted C1-C20 alkoxycarbonyl group, a substituted or unsubstituted C6-C20 aryl group, a substituted or unsubstituted C2-C20 alkenyl group, and a substituted or unsubstituted C2-C20 alkynyl group; The substituent is selected from at least one of a halogen atom, a nitro group, a cyano group, a carboxyl group, a hydroxyl group, a C1-C10 alkoxycarbonyl group, a C1-C10 acyloxy group, and a C1-C10 alkyl group; m and n are each independently selected from any integer of 1 to 4.

9. The method for preparing a photoelectric device according to claim 7 or 8, characterized in that: Before the step of providing the organic mixed solution, the method further comprises: The main material and the benzotriazole ultraviolet absorber are dissolved in an organic solvent and mixed to obtain the organic mixed solution.

10. The method for preparing a photoelectric device according to claim 9, characterized in that: The mass ratio of the benzotriazole ultraviolet absorber to the main material is (1-10): (90-99); and / or, The organic solvent is selected from at least one of aromatic hydrocarbon solvents, aliphatic hydrocarbon solvents, alicyclic hydrocarbon solvents, halogenated hydrocarbon solvents, alcohol solvents, ether solvents, ester solvents, ketone solvents, diol derivative solvents, acetonitrile, pyridine or phenol.

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