GaN HEMT device voltage oscillation prediction analysis system
By designing the voltage oscillation prediction and analysis system of GaN HEMT devices, using the combination of Simulink and GUI, the problem of voltage oscillation prediction of GaN HEMT devices is solved, and fast and accurate prediction is achieved, reducing development costs and time.
Patent Information
- Application Number
- CN202411707713.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-27
- Publication Date
- 2025-03-11
AI Technical Summary
The high switching frequency of GaN HEMT devices leads to voltage oscillation problems, increasing the demand for testing systems and equipment, and the development process is time-consuming and costly, requiring high theoretical foundation and practical ability of engineering and technical personnel.
A GaN HEMT device voltage oscillation prediction and analysis system was designed, using Simulink model and GUI interface, and by converting the spice model into a Simscape model, a dual-pulse test simulation circuit was constructed to achieve accurate prediction of device voltage oscillation.
The system can quickly and accurately predict voltage oscillation of GaN HEMT devices, simplify the operation process of engineers, reduce dependence on complex test circuits and expensive equipment, and significantly reduce the time and economic costs of product development.
Smart Images
Figure CN119598934A_ABST
Abstract
Description
Technical Field
[0001] The invention relates to the field of semiconductors and power converters, and in particular to a GaN HEMT device voltage oscillation prediction and analysis system. Background Art
[0002] At present, the core components of power converters generally use silicon-based insulated gate bipolar transistors (IGBTs) as switching elements. However, IGBTs face bottlenecks such as limited switching speed, significant switching loss and heat loss, and relatively low switching frequency. With the rapid development of semiconductor technology, wide bandgap semiconductor materials, especially gallium nitride high electron mobility transistors (GaN HEMTs), are leading the wave of change in the new generation of power converters with their faster switching speeds, lower switching and heat losses, and enhanced fault tolerance.
[0003] Traditionally, power converters rely on IGBTs, whose switching frequencies are mostly between kHz and 20kHz. The switching speed is not very fast and the voltage oscillation of the switching device is easy to control. In contrast, GaN HEMTs can achieve switching frequencies of up to hundreds of kHz. Although their ultra-fast switching speed characteristics have brought a leap in performance, they have also seriously aggravated the problem of voltage oscillation of the switching device, which not only poses a potential threat to peripheral devices, but may also cause instability inside the converter.
[0004] In view of this, companies are facing unprecedented challenges when developing products based on GaN technology: they need to build more complex test systems and purchase more expensive test equipment to fully acquire and analyze relevant data to verify the performance indicators and reliability of the device. This process is not only time-consuming and costly, but also places high demands on the theoretical foundation and practical ability of engineering and technical personnel.
[0005] Aiming at the above problems, a GaN HEMT device voltage oscillation prediction and analysis system is proposed. Summary of the invention
[0006] The purpose of the present invention is to overcome the above problems and provide a GaN HEMT device voltage oscillation prediction and analysis system. To achieve the above purpose, the present invention adopts the following technical solutions:
[0007] A GaN HEMT device voltage oscillation prediction and analysis system, comprising a Simulink model implementation module and a GUI interface implementation module; the GUI interface implementation module comprises a double pulse test circuit diagram display part, a double pulse test circuit element parameter input and simulation control part and a voltage oscillation prediction waveform display part;
[0008] The Simulink model implementation module is used to convert the SPICE model into a Simscape model, build a double pulse test simulation circuit, calculate simulation data, run simulation, and output simulation data.
[0009] The GaN HEMT device voltage oscillation prediction and analysis software uses Simulink and GUI co-simulation. It can select a variety of actual GaN device models from GaNSystems and arbitrarily change the parasitic inductance parameters to perform voltage oscillation prediction and analysis of GaN HEMT devices.
[0010] Furthermore, the specific method of converting the spice model to the Simscape model is as follows:
[0011] Step S11: Obtaining a spice model; obtaining a spice model netlist file of the device from a GaN HEMT device manufacturer;
[0012] Step S12: Use the subcircuit2ssc function: Use the subcircuit2ssc function provided by MATLAB to convert the spice model netlist file into the code of the Simscape component model;
[0013] Step S13: Encapsulate the Simscape component model code into a Simscape component model through the ssc_build function, and add the model to the Simulink custom library for calling.
[0014] The device simulation model in Simulink comes from the spice software simulation model provided by the GaN HEMT device manufacturer. There is no GaN HEMT component in the MATLAB software component library. In order to use the spice model in Simulink, the spice model netlist of the real device is converted into the code corresponding to the Simscape component model in Simulink using the MATLAB subcircuit2ssc function. Then, the Simscape component model code is encapsulated into a Simscape component model through the ssc_build function, and the model is added to the Simulink custom library for easy calling.
[0015] Furthermore, the Simulink model of the double pulse test simulation circuit is built using a Simscape model of a packaged GaN HEMT element; the Simulink model uses one of eight different GaN HEMT devices, and the rest of the circuits are the same.
[0016] The Simscape model of the packaged GaN HEMT element is used to build 8 Simulink models of the double pulse test simulation circuit. Each Simulink model uses one of the 8 different GaN HEMT devices, and the rest of the circuits are the same. The simulation data is calculated by the Solver Configuration solver for the Simulink model; the simulation data includes the gate-source voltage V gs , drain-source voltage V ds and drain current; the calculation formula is as follows:
[0017]
[0018] t h -t1=(t3-t2)+(t1-t0)
[0019] The gate-source voltage V of active tube Q2 gs , drain-source voltage V ds and the drain current i D It is the main measurement object. The function of the passive tube Q1 is to conduct reverse conduction when the active tube Q2 is turned off. Its theoretical working waveform is as follows: Figure 4 When the active tube Q2 is turned on, the inductor current i L Linear increase; when the active tube Q2 is turned off, the inductor continues to flow through the passive tube Q1, and the inductor current i L During the second pulse, it is necessary to measure the turn-on and turn-off waveforms of the power device under certain voltage and load current.
[0020] The simulation process is started by running the code, and the simulation data is output to the current workspace of MATLAB.
[0021] Furthermore, the double pulse test circuit diagram displayed in the double pulse test circuit diagram display part is fixedly displayed by the image axis through the code imshow('circuit.bmp').
[0022] The double pulse test circuit element parameters displayed in the double pulse test circuit element parameter input and simulation control part are refreshed to the pre-set values in the parameter input area through code; the set_param function finds the corresponding element in the Simulink simulation model according to the corresponding path, and modifies the element parameters to the set values; the simulation model is specified to run by the sim function, and the simulation model is started or stopped by setting the simulation command parameters.
[0023] The component names in the circuit diagram correspond to the 6 editable component parameter input areas in the lower left corner of the GUI interface. The drop-down menu can select any of the 8 different GaN HEMT devices. The GUI interface uses the code num=
[0024] get(handles.popupmenu1,'value') gets the value selected in the drop-down menu and calls the Simulink double pulse test simulation model containing the corresponding GaN HEMT device type through the following code.
[0025] Furthermore, in the voltage oscillation prediction waveform display part, the axes function in the GUI is used in combination with the simulation data output to the workspace by the Simulink model to run the code and draw the voltage and current waveforms of the double pulse test; after clicking the voltage oscillation prediction analysis button and waiting for the program to run, the right half of the software interface displays the voltage and current waveforms of the double pulse test experiment V gs 、i L 、V ds 、i D The simulation waveform.
[0026] The advantages of the present invention are:
[0027] 1. The present invention has been verified through previous theories and experiments. The software can accurately predict the voltage oscillation of GaN HEMT devices and provide a reliable reference for engineers.
[0028] 2. In the present invention, the user only needs to simply select the manufacturer and model of the GaN HEMT device used, and enter or set the relevant parameters according to the manual, and then directly observe the voltage oscillation changes of the device through an intuitive visual interface. This operation process is simple and fast, and reduces the requirements for the theoretical level of engineers.
[0029] 3. The present invention supports fast and flexible comparison of the voltage oscillation of different GaN HEMT devices under the same conditions, as well as the voltage oscillation performance of the same device under different parameter settings. This function helps engineers quickly screen out the optimal device model and parameter configuration.
[0030] 4. The present invention significantly reduces the time and economic costs in the product development process and improves the overall development efficiency by reducing the dependence on traditional complex test circuits and expensive test equipment. BRIEF DESCRIPTION OF THE DRAWINGS
[0031] The drawings constituting a part of this application are used to provide a further understanding of this application, so that other features, purposes and advantages of this application become more obvious. The illustrative embodiment drawings and their descriptions of this application are used to explain this application and do not constitute an improper limitation on this application.
[0032] In the attached picture:
[0033] Figure 1The figure is a flow chart of the voltage oscillation prediction and analysis system of the GaN HEMT device of the present invention.
[0034] Figure 2 This is the schematic diagram of the double pulse test circuit in Example 1.
[0035] Figure 3 This is the Simulink model of the GaN HEMT device voltage oscillation prediction and analysis system in Example 1.
[0036] Figure 4 This is the ideal waveform diagram of the double pulse test in Example 1.
[0037] Figure 5 This is the GUI interface of the GaN HEMT device voltage oscillation prediction and analysis system in Example 1.
[0038] Figure 6 The operation status of the GaN HEMT device voltage oscillation prediction and analysis system in Example 1 is shown.
[0039] Figure 7 This is the predicted waveform of VGS voltage oscillation under certain parameters in Example 2.
[0040] Figure 8 This is the predicted waveform of VDS voltage oscillation under certain parameters in Example 2.
[0041] Fig. 9 This is a diagram showing the system effect in Example 2.
[0042] Fig.10 This is a diagram showing the effect of changing the inductance parameters in Example 2.
[0043] Fig.11 This is a diagram showing the effect of changing the GaN HEMT device model in Example 2. DETAILED DESCRIPTION
[0044] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings here can be arranged and designed in various different configurations.
[0045] The present invention is described in detail and specifically by specific examples below to provide a better understanding of the present invention, but the following examples do not limit the protection scope of the present invention.
[0046] Example 1
[0047] like Figure 1-Figure 6As shown, a GaN HEMT device voltage oscillation prediction and analysis system includes a Simulink model implementation module and a GUI interface implementation module; the GUI interface implementation module includes a double pulse test circuit diagram display part, a double pulse test circuit component parameter input and simulation control part and a voltage oscillation prediction waveform display part;
[0048] The Simulink model implementation module is used to convert the SPICE model into a Simscape model, build a double pulse test simulation circuit, calculate simulation data, run simulation, and output simulation data.
[0049] GaN HEMT device voltage oscillation prediction and analysis software uses Simulink and GUI co-simulation, and GaNSystems can be selected
[0050] The company has a variety of actual GaN device models and can arbitrarily change parasitic inductance parameters to perform voltage oscillation prediction and analysis of GaN HEMT devices.
[0051] Furthermore, the specific method of converting the spice model to the Simscape model is as follows:
[0052] Step S11: Obtaining a spice model; obtaining a spice model netlist file of the device from a GaN HEMT device manufacturer; Step S12: Using the subcircuit2ssc function: using the subcircuit2ssc function provided by MATLAB, converting the spice model netlist file into the code of the Simscape component model;
[0053] Step S13: Encapsulate the Simscape component model code into a Simscape component model through the ssc_build function, and add the model to the Simulink custom library for calling.
[0054] The device simulation model in Simulink comes from the spice software simulation model provided by the GaN HEMT device manufacturer. There is no GaN HEMT component in the MATLAB software component library. In order to use the spice model in Simulink, the spice model netlist of the real device is converted into the code corresponding to the Simscape component model in Simulink using the MATLAB subcircuit2ssc function. Then, the Simscape component model code is encapsulated into a Simscape component model through the ssc_build function, and the model is added to the Simulink custom library for easy calling.
[0055] Furthermore, the Simulink model of the double pulse test simulation circuit is built using a Simscape model of a packaged GaN HEMT element; the Simulink model uses one of eight different GaN HEMT devices, and the rest of the circuits are the same.
[0056] The Simscape model of the packaged GaN HEMT component was used to build the Simulink models of eight double pulse test simulation circuits. Each Simulink model used one of the eight different GaN HEMT devices, and the rest of the circuits were the same.
[0057] The simulation data is calculated by the Solver Configuration solver on the Simulink model; the simulation data includes the gate-source voltage V gs , drain-source voltage V ds and drain current; the calculation formula is as follows:
[0058]
[0059] t h -t1=(t3-t2)+(t1-t0)
[0060] The gate-source voltage V of active tube Q2 gs , drain-source voltage V ds and the drain current i D It is the main measurement object. The function of the passive tube Q1 is to conduct reverse conduction when the active tube Q2 is turned off. Its theoretical working waveform is as follows: Figure 4 When the active tube Q2 is turned on, the inductor current i L Linear increase; when the active tube Q2 is turned off, the inductor continues to flow through the passive tube Q1, and the inductor current i L During the second pulse, it is necessary to measure the turn-on and turn-off waveforms of the power device under certain voltage and load current.
[0061] The simulation process is started by running the code, and the simulation data is output to the current workspace of MATLAB.
[0062] Furthermore, the double pulse test circuit diagram displayed in the double pulse test circuit diagram display part is fixedly displayed by the image axis through the code imshow('circuit.bmp').
[0063] The double pulse test circuit element parameters displayed in the double pulse test circuit element parameter input and simulation control part are refreshed to the pre-set values in the parameter input area through code; the set_param function finds the corresponding element in the Simulink simulation model according to the corresponding path, and modifies the element parameters to the set values; the simulation model is specified to run by the sim function, and the simulation model is started or stopped by setting the simulation command parameters.
[0064] The component names in the circuit diagram correspond to the six editable component parameter input areas in the lower left corner of the GUI interface. The drop-down menu can select any of the eight different GaN HEMT devices. The GUI interface obtains the value selected in the drop-down menu through the code num=get(handles.popupmenu1,'value'), and calls the Simulink double pulse test simulation model containing the corresponding GaN HEMT device type through the following code.
[0065] Furthermore, in the voltage oscillation prediction waveform display part, the axes function in the GUI is used in combination with the simulation data output to the workspace by the Simulink model to run the code and draw the voltage and current waveforms of the double pulse test; after clicking the voltage oscillation prediction analysis button and waiting for the program to run, the right half of the software interface displays the voltage and current waveforms of the double pulse test experiment V gs 、i L 、V ds 、i D The simulation waveform.
[0066] Example 2
[0067] like Figure 7 , Figure 8 As shown, a GaN HEMT device voltage oscillation prediction and analysis system includes the following steps:
[0068] Step S1: Double pulse test circuit diagram
[0069] The software interface displays the circuit diagram of the double pulse test and the default values of the six inductors in the double pulse test circuit, making it easy to adjust back to the default parameters of the circuit.
[0070] Step S2: Select GaN HEMT device type
[0071] In the drop-down menu of the software interface, eight GaN HEMT devices from GaN Systems can be selected as components for the double pulse test simulation circuit, namely GS66502B, GS66504B, GS66508B, GS66508T,
[0072] GS-065-060-3-B, GS-065-060-3-T, GS-065-060-5-BA and GS-065-060-5-TA.
[0073] Step S3: Adjust inductance parameters
[0074] In the lower left corner of the software interface, you can enter numbers through 6 editable texts. The units of inductance are shown in the description on the left side of the input box, representing the parameter values of the 6 inductors at the corresponding positions in the double pulse test circuit diagram. After entering the inductance parameters, click the "Voltage Oscillation Prediction Analysis" button to refresh the 6 inductance values entered by the user to the inductance components at the corresponding positions in the circuit diagram.
[0075] Step S4: Start simulation
[0076] Click the "Voltage Oscillation Prediction Analysis" button to start the double pulse test circuit simulation using the inductance parameters set by the user. After the program is completed, the V gs 、i L 、V ds 、i D These four simulation waveforms are displayed on the four coordinate axes on the right side of the software interface.
[0077] Step S5: Software effect display
[0078] like Figure 9-11 , a display diagram of the software effect, changing inductor parameters and changing GaN HEMT device models.
[0079] Circuit diagrams and simulation waveforms can be enlarged for easy observation.
[0080] The present invention allows users to easily select GaN devices from different manufacturers, directly input parameters according to the device manual or flexibly set parameters through the user interface. Through the intuitive visual interface, users can instantly monitor the voltage oscillation of the device under simulated working conditions, and achieve rapid and accurate prediction of GaN HEMT voltage oscillation, greatly improving the efficiency and accuracy of product design and verification, and providing strong technical support for engineers.
[0081] The specific embodiments of the present invention are described in detail above, but they are only examples, and the present invention is not equivalent to the specific embodiments described above. For those skilled in the art, any equivalent modifications and substitutions made to the present invention are also within the scope of the present invention. Therefore, the equalization changes and modifications made without departing from the spirit and scope of the present invention should be included in the scope of the present invention.
Claims
1. A GaN HEMT device voltage oscillation prediction and analysis system, characterized in that: It includes a Simulink model implementation module and a GUI interface implementation module; the GUI interface implementation module includes a double pulse test circuit diagram display part, a double pulse test circuit component parameter input and simulation control part and a voltage oscillation prediction waveform display part; The Simulink model implementation module is used to convert the SPICE model into a Simscape model, build a double pulse test simulation circuit, calculate simulation data, run simulation, and output simulation data.
2. A GaN HEMT device voltage oscillation prediction and analysis system according to claim 1, characterized in that: The specific method of converting the spice model to the Simscape model is as follows: Step S11: Obtaining a spice model; obtaining a spice model netlist file of the device from a GaN HEMT device manufacturer; Step S12: Use the subcircuit2ssc function: Use the subcircuit2ssc function provided by MATLAB to convert the spice model netlist file into the code of the Simscape component model; Step S13: Encapsulate the Simscape component model code into a Simscape component model through the ssc_build function, and add the model to the Simulink custom library for calling.
3. A GaN HEMT device voltage oscillation prediction and analysis system according to claim 2, characterized in that: The Simulink model in the double pulse test simulation circuit is built using the Simscape model of the packaged GaN HEMT element; the Simulink model uses one of 8 different GaN HEMT devices, and the rest of the circuits are the same.
4. A GaN HEMT device voltage oscillation prediction and analysis system according to claim 3, characterized in that: The simulation data is calculated by the Solver Configuration solver on the Simulink model; the simulation data includes the gate-source voltage V gs , drain-source voltage V ds and drain current; the calculation formula is as follows: t h -t1=(t3-t2)+(t1-t0) 5. A GaN HEMT device voltage oscillation prediction and analysis system according to claim 4, characterized in that: The simulation process is started by running the code, and the simulation data is output to the current workspace of MATLAB.
6. The GaN HEMT device voltage oscillation prediction and analysis system according to claim 1, characterized in that: The double pulse test circuit diagram displayed in the double pulse test circuit diagram display part is fixedly displayed by the image axis through the code imshow('circuit.bmp').
7. A GaN HEMT device voltage oscillation prediction and analysis system according to claim 6, characterized in that: The double pulse test circuit element parameters displayed in the double pulse test circuit element parameter input and simulation control part are refreshed to the pre-set values in the parameter input area through code; the set_param function finds the corresponding element in the Simulink simulation model according to the corresponding path, and modifies the element parameters to the set values; the simulation model is specified to run by the sim function, and the simulation model is started or stopped by setting the simulation command parameters.
8. The GaN HEMT device voltage oscillation prediction and analysis system according to claim 7, characterized in that: In the voltage oscillation prediction waveform display part, the axes function in the GUI is used in combination with the simulation data output to the workspace by the Simulink model to run the code and draw the voltage and current waveforms of the double pulse test; after clicking the voltage oscillation prediction analysis button and waiting for the program to run, the right half of the software interface displays the voltage and current waveforms of the double pulse test experiment V gs 、i L 、V ds 、i D The simulation waveform.