Wafer baking chamber and semiconductor equipment

Abstract

According to the wafer baking chamber and the semiconductor device, a chamber body of the wafer baking chamber comprises a plurality of process chambers which are arranged in a stacked mode, a plurality of bases used for bearing wafers are arranged in each process chamber at intervals, and the wafer processing capacity is improved through the multiple process chambers and the multiple bases arranged in each process chamber. Besides, the number of the air inlets is multiple, the air inlets are formed in the two opposite side walls in the second direction respectively, and the air extraction opening is communicated with the process cavity and located on one side of the air inlets in the first direction, that is, the air extraction opening and the air inlets are arranged at intervals. The gas inlet is formed in the side wall in the second direction, so that the gas can flow directionally in the process chamber, and the gas inlet is formed in the side wall in the second direction, so that the gas can enter the process chamber from the two side walls in the second direction at the same time, the gas distribution uniformity in the process chamber is ensured, volatile matters are discharged in time, and the efficiency is improved. And the baking quality and uniformity of the wafer are improved.

Description

Technical Field

[0001] The embodiments of the present invention relate to the field of semiconductor equipment, and in particular to a wafer baking chamber and semiconductor equipment. Background Art

[0002] In the chip manufacturing process, the etching process plays a key role. The etching process is mainly used to remove the oxide layer on the surface of the wafer to prepare for subsequent processing steps. According to actual production needs, the etching process is mainly divided into two categories: dry etching and wet etching. Among them, dry etching uses chemical or physical reactions in the gas phase to remove the surface of the material to be etched, while wet etching uses chemical solutions to remove the surface of the material.

[0003] In the dry etching system, two main devices are usually configured: a reaction device and a baking device. A specific ratio of special gases is introduced into the reaction device to react with the wafer surface under specific temperature conditions; the baking device sets the temperature conditions to volatilize the unnecessary medium on the wafer after the reaction. Currently, the baking devices on the market generally adopt a single chamber design, and each chamber can only accommodate one wafer for baking. Although some advanced devices have achieved the ability to bake two wafers at the same time in a single chamber, if the placement and reaction time between wafers are not properly controlled, it is easy to affect the preparation quality of the wafers.

[0004] Moreover, the single chamber design of the existing baking device limits the improvement of the overall production efficiency and has low space utilization. Summary of the invention

[0005] The problem solved by the embodiments of the present invention is to provide a wafer baking chamber and a semiconductor device for simultaneously accommodating a plurality of wafers for baking treatment, so as to improve production efficiency.

[0006] To solve the above problems, an embodiment of the present invention provides a wafer baking chamber, including: a chamber body, including a plurality of stacked process chambers, and each of the process chambers is provided with a plurality of bases for supporting wafers, and the process chamber includes a first direction in a plane and a second direction perpendicular to the first direction; an air inlet, connected to the process chamber and located on one side of the process chamber in the first direction, the number of the air inlets is multiple, and they are respectively arranged on two side walls opposite to each other in the second direction; an exhaust port, connected to the process chamber and located on the same side of the plurality of air inlets in the first direction.

[0007] Optionally, the air inlet is arranged toward the base, and the air inlet is higher than the base in a vertical direction.

[0008] Optionally, in the first direction, an area to which an extension line of the air inlet is aligned is located between a center of the base and a side wall of the cavity.

[0009] Optionally, the air inlets are arranged in pairs on two side walls in the second direction, and the oppositely arranged air inlets are coaxially arranged.

[0010] Optionally, the cavity includes two process chambers, namely a top process chamber and a bottom process chamber; in the first direction, the exhaust port corresponding to the bottom process chamber and the exhaust port corresponding to the top process chamber are respectively located on both sides of the side wall of the cavity in the first direction.

[0011] Optionally, on a horizontal projection plane, the exhaust port of the bottom process chamber is located on the inner side of the side wall of the cavity, and the exhaust port of the top process chamber is located on the outer side of the side wall of the cavity; or, on a horizontal projection plane, the exhaust port of the bottom process chamber is located on the outer side of the side wall of the cavity, and the exhaust port of the top process chamber is located on the inner side of the side wall of the cavity.

[0012] Optionally, the air suction port extends in a vertical direction, or the air suction port extends in a first direction.

[0013] Optionally, the cavity is in the shape of a cuboid.

[0014] Optionally, a wafer transfer port is arranged on a side wall of the process chamber in the first direction, the air inlet is arranged close to the wafer transfer port, and the air exhaust port is arranged away from the wafer transfer port.

[0015] Optionally, the cavity includes two process chambers, namely a top process chamber and a bottom process chamber; the wafer baking chamber also includes: an upper gate valve, arranged at the wafer transfer port of the top process chamber, for opening or closing the wafer transfer port; a lower gate valve, arranged at the wafer transfer port of the bottom process chamber, for opening or closing the wafer transfer port.

[0016] Optionally, the plurality of process chambers are aligned at both ends of the first direction, and the plurality of process chambers are aligned at both ends of the second direction.

[0017] Optionally, the number of the air inlets is the same as the number of the bases.

[0018] Optionally, the plurality of bases in the process chamber are arranged at intervals along the second direction.

[0019] Optionally, in each of the process chambers, the number of the exhaust ports is the same as the number of the bases and corresponds one-to-one to the bases; or the number of the exhaust port is one and is located at the center of the second direction of the process chamber.

[0020] Optionally, the wafer baking chamber further includes: a maintenance structure, which is detachably disposed in the process chamber below the topmost process chamber and is located on the side wall of the process chamber below in the second direction.

[0021] Optionally, the maintenance structure includes: a fixed structure; an observation window, which is arranged on the fixed structure; the air inlet, which passes through the fixed structure and is spaced apart from the observation window in the first direction, and the air inlet is farther away from the air exhaust port than the observation window.

[0022] Optionally, a stepped hole extending along the second direction is provided on the side wall of the process chamber at the bottom; the maintenance structure includes: a stepped boss structure, the stepped boss structure corresponds to the stepped hole, and the stepped boss structure is installed on the stepped hole.

[0023] Optionally, the stepped hole includes: a first hole and a second hole connected to the first hole, and the size of the second hole is smaller than the first hole; the stepped boss structure includes: a main body part and a first raised part located on the main body part, the first raised part is used to be set in the second hole, and the main body part is used to be set in the first hole.

[0024] Optionally, the wafer baking chamber further includes: an air inlet pipeline connected to the air inlet.

[0025] Optionally, the chamber includes: a cover plate detachably disposed on the top of the process chamber at the top; and an observation window disposed on the side wall of the process chamber at the top in the second direction.

[0026] Optionally, the wafer baking chamber further includes: a partition structure for isolating adjacent process chambers in a vertical direction, and a heating unit is provided in the partition structure.

[0027] Optionally, two bases are disposed in the process chamber, and the two bases are symmetrically arranged in the process chamber.

[0028] Optionally, in the vertical direction, the positions of the bases in the same process chamber are the same.

[0029] Optionally, the cavity includes two process chambers, namely a top process chamber and a bottom process chamber; the wafer baking chamber also includes: an exhaust buffer chamber, which is located on the side wall of the top process chamber in the first direction and is connected to the top process chamber.

[0030] An embodiment of the present invention also provides a semiconductor device, comprising: the wafer baking chamber, each of the process chambers having a wafer transfer port; a transfer device, corresponding to the wafer transfer port, for taking out the baked wafers from the process chamber, or placing the wafers to be baked into the wafer baking chamber; a negative pressure generating device, the number of the negative pressure generating devices is multiple, and the negative pressure generating devices correspond one-to-one to and are connected with the exhaust port of the process chamber through an exhaust channel.

[0031] Compared with the prior art, the technical solution of the embodiment of the present invention has the following advantages:

[0032] In the wafer baking chamber provided by the embodiment of the present invention, the chamber includes a plurality of process chambers arranged in a stacked manner, and a plurality of bases for carrying wafers are arranged at intervals in each of the process chambers. The stacked arrangement of the plurality of process chambers improves the space utilization rate, and the wafer processing capacity is increased by arranging a plurality of bases in each process chamber. In addition, the air inlet is connected to the process chamber and is located on one side of the process chamber in the first direction. The number of the air inlets is multiple and they are respectively arranged on two side walls opposite to each other in the second direction. The exhaust port is connected to the process chamber and is located on the same side of the plurality of air inlets in the first direction, that is, the exhaust port and the plurality of air inlets are arranged at intervals. By arranging the air inlet and the exhaust port at intervals, the gas can form a directional flow in the process chamber, and because the air inlets are respectively arranged on the side walls in the second direction, the gas can enter the process chamber from the two side walls in the second direction at the same time, which is conducive to ensuring the uniformity of gas distribution in the process chamber, so that volatiles are discharged in time, and the baking quality and uniformity of the wafer are improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Figure 1 is a schematic structural diagram of a wafer baking chamber according to an embodiment of the present invention;

[0034] Figure 2 is a schematic cross-sectional structure diagram of a wafer baking chamber according to an embodiment of the present invention;

[0035] Figure 3 1 is a schematic structural diagram of a top process chamber in a wafer baking chamber according to an embodiment of the present invention;

[0036] Figure 4 1 is a schematic structural diagram of a bottom process chamber in a wafer baking chamber according to an embodiment of the present invention;

[0037] Figure 5 It is a structural schematic diagram of a maintenance structure in a process chamber at the bottom of a wafer according to an embodiment of the present invention from one perspective;

[0038] Figure 6is a structural schematic diagram of another perspective of the maintenance structure in the bottom process chamber of the wafer according to an embodiment of the present invention;

[0039] Figure 7 It is a schematic diagram of the installation of the bottom process chamber and the maintenance structure in the wafer baking chamber according to an embodiment of the present invention;

[0040] Figure 8 1 is a schematic structural diagram of a partition structure in a wafer baking chamber according to an embodiment of the present invention;

[0041] Fig. 9 It is a structural schematic diagram of other embodiments of the process chamber in the wafer baking chamber of the embodiment of the present invention;

[0042] Fig.10 is a schematic cross-sectional structural diagram of a semiconductor device according to an embodiment of the present invention;

[0043] Fig.11 is a structural schematic diagram of a semiconductor device from one perspective according to an embodiment of the present invention;

[0044] Fig.12 It is a schematic diagram of the isometric structure of a semiconductor device according to an embodiment of the present invention. DETAILED DESCRIPTION

[0045] As can be seen from the background technology, the single chamber design of the existing baking device limits the improvement of the overall production efficiency and has a low space utilization rate.

[0046] In order to solve the technical problem, in the wafer baking chamber provided by the embodiment of the present invention, the chamber includes a plurality of stacked process chambers, each of which is provided with a plurality of bases for carrying wafers at intervals, and the stacked arrangement of the plurality of process chambers improves the space utilization rate, and the wafer processing capacity is improved by providing a plurality of bases in each process chamber. In addition, the air inlet is connected to the process chamber and is located on one side of the process chamber in the first direction, the number of the air inlets is multiple, and they are respectively arranged on two side walls opposite to each other in the second direction, the air extraction port is connected to the process chamber and is located on the same side of the plurality of air inlets in the first direction, that is, the air extraction port and the plurality of air inlets are arranged at intervals, and the air inlet and the air extraction port are arranged at intervals, so that the gas can form a directional flow in the process chamber, and because the air inlets are respectively arranged on the side walls in the second direction, the gas can enter the process chamber from the two side walls in the second direction at the same time, which is conducive to ensuring the uniformity of gas distribution in the process chamber, so that the volatiles are discharged in time, and the baking quality and uniformity of the wafer are improved.

[0047] In order to make the above-mentioned purposes, features and advantages of the embodiments of the present invention more obvious and understandable, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0048] Figure 1 is a schematic structural diagram of a wafer baking chamber according to an embodiment of the present invention, Figure 2 is a schematic cross-sectional structure diagram of a wafer baking chamber according to an embodiment of the present invention, Figure 3 1 is a schematic diagram of the structure of the top process chamber in the wafer baking chamber according to an embodiment of the present invention. Figure 4 1 is a schematic diagram of the structure of the bottom process chamber in the wafer baking chamber according to an embodiment of the present invention. Figure 5 This is a schematic structural diagram of a maintenance structure in a process chamber at the bottom of a wafer according to an embodiment of the present invention from one perspective. Figure 6 This is a schematic structural diagram of another perspective of the maintenance structure in the bottom process chamber of the wafer according to an embodiment of the present invention. Figure 7 1 is a schematic diagram of the installation of the bottom process chamber and the maintenance structure in the wafer baking chamber according to an embodiment of the present invention. Figure 8 is a schematic structural diagram of a partition structure in a wafer baking chamber according to an embodiment of the present invention, Fig. 9 It is a structural schematic diagram of other embodiments of the process chamber in the wafer baking chamber of an embodiment of the present invention.

[0049] Combination Figures 1 to 4 An embodiment of the present invention provides a wafer baking chamber, comprising: a chamber body 100, comprising a plurality of stacked process chambers 101, and each process chamber 101 is provided with a plurality of bases 102 for carrying wafers at intervals, the process chamber 101 includes a first direction X in a plane, and a second direction Y perpendicular to the first direction X; an air inlet 103, connected to the process chamber 101, and located on one side of the process chamber 101 in the first direction X, the number of the air inlets 103 is multiple, and they are respectively arranged on two side walls opposite to each other in the second direction Y; an exhaust port 104, connected to the process chamber 101, and located on the same side of the plurality of air inlets 103 in the first direction X.

[0050] In the wafer baking chamber provided in an embodiment of the present invention, the cavity 100 includes a plurality of stacked process chambers 101, and a plurality of bases 102 for carrying wafers are arranged at intervals in each process chamber 101. The stacked arrangement of the plurality of process chambers 101 improves space utilization, and the wafer processing capacity is increased by arranging a plurality of bases 102 in each process chamber 101. In addition, the air inlet 103 is connected to the process chamber 101 and is located on one side of the process chamber 101 in the first direction X. There are multiple air inlets 103, which are respectively arranged on two opposite side walls in the second direction Y. The exhaust port 104 is connected to the process chamber 101 and is located on the same side of the multiple air inlets 103 in the first direction X. That is to say, the exhaust port 104 and the multiple air inlets 103 are arranged at intervals. By arranging the air inlet 103 and the exhaust port 104 at intervals, the gas can form a directional flow in the process chamber 101, and because the air inlet 103 is symmetrically arranged on the side wall in the second direction Y, the gas can enter the process chamber 101 from the two side walls in the second direction Y at the same time, which is beneficial to ensure the uniformity of gas distribution in the process chamber 101, so that volatiles are discharged in time, and the baking quality and uniformity of the wafers are improved.

[0051] In this embodiment, the chamber 100 includes a plurality of process chambers 101 which are stacked and arranged.

[0052] The cavity 100 includes a plurality of process chambers 101 arranged in a stacked manner. The space utilization rate per unit area is significantly improved by utilizing the space in the vertical direction, so that more wafers can be accommodated and processed in the cavity 100 at the same time, thereby improving the production capacity of the wafer baking chamber and overcoming the technical problem of limited production capacity of a traditional single chamber. This enables the wafer baking chamber to meet the demand for high production capacity in modern semiconductor manufacturing, which is conducive to improving overall production efficiency.

[0053] In this embodiment, the chamber 100 is a rectangular parallelepiped. The rectangular parallelepiped is a regular geometric shape, which provides a stable spatial structure for the stacking arrangement of the process chambers 101, realizes the alignment of the process chambers 101 in the first direction X and the second direction Y, and further lays a structural foundation for the regular arrangement of functional components such as air inlets and exhaust ports.

[0054] In this embodiment, the plurality of process chambers 101 are aligned at both ends of the first direction X, and the plurality of process chambers 101 are aligned at both ends of the second direction Y.

[0055] The alignment of the process chambers 101 at both ends of the first direction X and the second direction Y is conducive to making each process chamber 101 have exactly the same internal space structure, providing a consistent gas flow environment and the same heating conditions for each process chamber 101, thereby ensuring the consistency and controllability of the wafer baking process in each process chamber 101, so that multiple process chambers 101 can maintain a stable processing environment at the same time, which is conducive to improving the consistency and yield rate of wafer baking.

[0056] In this embodiment, a plurality of bases 102 for carrying wafers are disposed at intervals in each process chamber 101 .

[0057] A plurality of bases 102 for carrying wafers are arranged at intervals in the process chamber 101, which increases the wafer processing capacity of a single process chamber 101 and enables each process chamber 101 to process multiple wafers simultaneously, thereby significantly improving the production efficiency of the wafer baking chamber.

[0058] In this embodiment, a heating wire is disposed in the base 102. The heating wire serves as a heating element to provide the required ambient temperature for wafer processing, ensure the stability and reliability of the baking process, and thus improve product quality.

[0059] It should also be noted that a uniform heat layer (not shown in the figure) is disposed on the surface of the base 102 , and the uniform heat layer serves as a wafer bearing surface.

[0060] The uniform heating layer arranged on the base 102 cooperates with the heating wire to achieve indirect heating of the wafer, avoids direct contact between the wafer and the base 102, and achieves more uniform heat conduction to the wafer, thereby ensuring that the wafer is heated evenly during the baking process, thereby improving the baking quality of the wafer, making the entire baking process more controllable, and is conducive to improving product quality.

[0061] Specifically, the uniform heat layer is a silicon wafer. The uniform heat layer is designed with a silicon wafer because the silicon wafer and the wafer have the same material properties and can evenly transfer the heat generated by the base heating wire to the wafer, thereby avoiding the problem of uneven heat distribution and making the entire baking process more controllable.

[0062] It should be noted that the heating wires in each base 102 can be independently controlled for heating. The heating wires set in each base 102 can be independently controlled, which is conducive to accurately adjusting the temperature of each base 102, thereby ensuring that each wafer obtains stable heat input, ensuring the uniformity and controllability of temperature during the process, improving the reliability of the wafer baking process, and enabling multiple wafers to obtain consistent heat treatment effects at the same time, which is conducive to improving product yield and production efficiency.

[0063] In this embodiment, the positions of the bases 102 in the same process chamber 101 are the same in the vertical direction. The positions of the bases 102 in the same process chamber 101 are kept the same in the vertical direction, and the same processing environment is provided for the wafers by ensuring the height consistency of each base 102, thereby ensuring the uniformity and stability of the process, thereby improving the consistency of the wafer baking quality and facilitating the improvement of the product yield. In addition, the height consistency of the base 102 also facilitates the robot to load and unload the wafer, thereby improving production efficiency.

[0064] In this embodiment, there are two process chambers 101. By arranging the process chambers 101 up and down, the space utilization is improved, and higher production capacity can be achieved within the same floor space, thereby ensuring that when one of the process chambers 101 has a problem, the other process chamber 101 can continue to work, thereby improving the reliability and production continuity of the wafer baking chamber, so that the wafer baking chamber has higher production efficiency and stronger fault tolerance.

[0065] In this embodiment, two bases 102 are disposed in the process chamber 101 , and the two bases 102 are symmetrically disposed in the process chamber 101 .

[0066] The symmetrical arrangement of the two bases 102 in the process chamber 101 is conducive to the uniform flow of gas in the process chamber 101. During the wafer processing, the temperature field around each base 102 is consistent, ensuring the stability and controllability of the wafer processing process, so that multiple wafers can obtain the same processing conditions at the same time, which is conducive to improving the yield and production efficiency of wafer baking.

[0067] In other embodiments, the process chamber may be provided with four bases, which are arranged in two rows and two columns. In other embodiments, the process chamber may be provided with six bases, which are arranged in two rows and three columns.

[0068] In this embodiment, the plurality of bases 102 in the process chamber 101 are arranged along the second direction Y at intervals.

[0069] The multiple bases 102 in the process chamber 101 are arranged at intervals along the second direction Y. By arranging the multiple bases 102 in the process chamber 101, efficient use of the space of the process chamber 101 is achieved, the wafer processing capacity of a single process chamber 101 is improved, and the production capacity of the wafer baking chamber is improved.

[0070] In this embodiment, the air inlet 103 is connected to the process chamber 101. During the wafer baking process, an inert gas is provided to the process chamber 101 through the air inlet 103, so that a stable process environment can be formed in the process chamber 101. The inert gas has stable chemical properties and will not react with the wafer surface. It can protect the surface quality of the wafer during high-temperature baking and help remove impurities generated during the process.

[0071] It should be noted that the air inlet 103 is located at one side of the process chamber 101 in the first direction X. There are multiple air inlets 103 , which are respectively arranged on two opposite side walls in the second direction Y.

[0072] A plurality of air inlets 103 are symmetrically arranged on the two side walls of the process chamber 101 in the second direction Y, so that gas can enter from both sides of the process chamber 101 at the same time, thereby forming a directional flow path from the air inlet 103 to the air exhaust port 104 in the process chamber 101, thereby ensuring the fluidity of the gas in the process chamber 101, thereby ensuring the uniformity of the gas distribution in the process chamber 101, allowing volatiles to be discharged in time, improving the utilization efficiency of the gas, and being beneficial to improving the baking quality of the wafers.

[0073] In this embodiment, the air inlet 103 is disposed toward the base 102 , and the air inlet 103 is higher than the base 102 in the vertical direction.

[0074] The air inlet 103 is arranged toward the base 102 and is higher than the base 102 in the vertical direction, so that the gas can form a uniform downward airflow under the action of gravity, thereby ensuring that the gas can effectively cover the wafer surface, thereby improving the contact efficiency between the gas and the wafer surface, and thus can significantly improve the utilization efficiency of the gas in the process, making the wafer baking process more uniform and controllable, which is conducive to improving product quality and production efficiency.

[0075] In this embodiment, in the first direction X, the area to which the extension line of the air inlet 103 is aligned is located between the center of the base 102 and the side wall of the cavity 100 .

[0076] The gas entering the chamber can form a directional flow path from the air inlet 103 to the exhaust port 104. Under the action of the exhaust port 104, even if the extension line of the air inlet 103 is aligned with the area between the center of the base 102 and the side wall of the cavity 100, under the action of the exhaust port 104, a negative pressure is formed in the chamber, and the gas can still pass over the entire wafer surface along a scientific and reasonable flow trajectory, ensuring the uniformity of gas distribution in the process chamber 101 and allowing volatiles to be discharged in time. Therefore, the utilization efficiency of the gas can be improved, and the baking quality of the wafer is significantly improved.

[0077] In this embodiment, the air inlets 103 are arranged in pairs on two side walls in the second direction Y, and the oppositely arranged air inlets 103 are coaxially arranged.

[0078] The air inlets 103 are arranged in pairs and coaxially on the two side walls of the process chamber 101 in the second direction Y, so that after the gas enters the process chamber 101 from both sides of the chamber, the two outflowing gases can converge, collide, and diffuse into the entire process chamber 101, thereby forming a uniform and controllable airflow distribution in the process chamber 101, ensuring the fluidity and uniformity of the gas distribution in the process chamber 101, so that the volatiles are discharged in time, so that the utilization efficiency of the gas is improved, so that the baking process of the wafer is more uniform and controllable, which is conducive to improving the baking quality of the wafer. At the same time, the air inlets 103 are arranged in pairs on the two side walls in the second direction Y, and cooperate with the exhaust port 104 to form a directional flow path from the air inlet 103 to the exhaust port 104, further optimizing the flow of gas in the process chamber 101.

[0079] It should also be noted that the number of the gas inlets 103 is the same as the number of the bases 102. The number of the gas inlets 103 is the same as the number of the bases 102, so that each base 102 can obtain independent and uniform gas supply, thereby ensuring the consistency of gas distribution around the wafer during the wafer baking process, thereby improving the gas utilization efficiency, and thus effectively improving the baking quality of the wafer.

[0080] In this embodiment, the wafer baking chamber further includes an air inlet pipeline (not shown in the figure), which is connected to the air inlet 103. The air inlet pipeline is connected to the air inlet 103 to form a gas delivery channel, thereby ensuring that the process gas can be stably and reliably delivered to the interior of the process chamber 101.

[0081] In this embodiment, the selection of the material of the air intake pipeline needs to meet the requirements of corrosion resistance, good air tightness, high temperature resistance, etc. This is because special gases need to be introduced during the baking process and work under specific temperature conditions. At the same time, it is also necessary to ensure that the gas can form a stable directional flow path in the process chamber 101. The selection of the material of the air intake pipeline directly affects the reliability and process effect of the wafer baking chamber. As an example, 316L stainless steel is used as the main structural material.

[0082] As an example, the connection between the air intake pipe and the air intake port 103 adopts a penetrating structure design, specifically including a double sealing ring structure, wherein the inner ring adopts fluororubber material as the main seal, and the outer ring adopts perfluoroether rubber material as the backup seal. The connection between the air intake pipe and the air intake port 103 adopts a standard flange-type sealing connection structure, which is precisely positioned by setting a positioning pin, and is fixed with equidistantly distributed bolts to ensure that the sealing pressure is evenly distributed. In other embodiments, the air intake pipe and the air intake port can also adopt other connection forms.

[0083] The chamber 100 includes: a cover plate 105 detachably disposed on the top of the process chamber 101 at the top; and an observation window 106 disposed on a side wall of the process chamber 101 at the top in the second direction Y.

[0084] The observation window 106 is used to monitor the internal state of the topmost process chamber 101a in real time without affecting the airtightness of the topmost process chamber 101a. When an abnormal situation is observed and maintenance is required, the removable cover 105 provides a quick inspection channel, which improves the maintainability and process controllability of the equipment, making the entire baking process more reliable and efficient, and is conducive to improving product quality and production efficiency.

[0085] like Figure 8 As shown, the wafer baking chamber further includes: a partition structure 107 for isolating adjacent process chambers 101 in a vertical direction, and a heating unit is provided in the partition structure 107 .

[0086] Adjacent process chambers 101 are isolated by a partition structure 107, so that the process environment inside each process chamber 101 is completely independent, thereby ensuring that each process chamber 101 can operate independently without interfering with each other; therefore, the partition structure 107 isolates the top process chamber 101a and the bottom process chamber 101b while also providing heat to the top process chamber 101a and the bottom process chamber 101b, so that the top process chamber 101a and the bottom process chamber 101b have a relatively uniform temperature environment, which is beneficial to improving the wafer baking quality.

[0087] It should be noted that the partition structure 107 has a plurality of base mounting holes 109 for fixing and mounting the base 102 .

[0088] like Figure 5 and Figure 6 As shown, the wafer baking chamber further includes: a maintenance structure 108, which is detachably disposed in the process chamber 101 below the topmost process chamber 101 and is located on the side wall of the process chamber below in the second direction Y.

[0089] The maintenance structure 108 facilitates the maintenance of the process chamber 101 at the bottom among the adjacent process chambers 101, and can perform maintenance operations without affecting the operation of the top process chamber, thereby improving the maintainability of the wafer baking chamber and reducing the impact on the top process chamber 101 when maintaining the process chamber 101 below, so that the maintenance efficiency of the wafer baking chamber is significantly improved, which is conducive to ensuring the continuous and stable operation of the entire wafer baking chamber. The maintenance structure 108 is arranged on the two side walls in the second direction Y, so that the process chamber 101 has a double-sided maintenance capability, provides a more flexible maintenance operation space, improves maintenance efficiency and convenience, and enables the wafer baking chamber to be better maintained.

[0090] In this embodiment, the maintenance structure 108 is detachably mounted on two side walls in the second direction Y.

[0091] The maintenance structure 108 is detachably installed on the two side walls in the second direction Y, which improves the maintenance convenience and comprehensiveness of the maintenance structure 108, reduces the maintenance difficulty, and significantly improves the maintenance efficiency, which is beneficial to the daily maintenance and troubleshooting of the wafer baking chamber.

[0092] In this embodiment, the maintenance structure 108 includes: a fixed structure 113; an observation window 106, which is arranged on the fixed structure 113; an air inlet 103, which passes through the fixed structure 113 and is spaced apart from the observation window 106 in the first direction X. The air inlet 103 is farther away from the air exhaust port 104 than the observation window 106.

[0093] The fixed structure 113 provides a structural basis for fixing the maintenance structure 108 on the second direction side wall of the lower process chamber. The observation window 106 is used to observe the internal conditions of the bottom process chamber 101b in real time during the wafer baking process, which is conducive to timely discovering abnormal conditions during the baking process, thereby ensuring the stability of the baking process, thereby improving the reliability of the wafer baking chamber operation and helping to improve the quality of wafer baking.

[0094] As an example, the observation window 106 adopts a multi-layer structure design, which includes a high-temperature resistant quartz glass window, a double-layer sealing ring and a stainless steel fixed frame from the inside to the outside. The quartz glass window adopts a special anti-reflection treatment process, and by coating a multi-layer dielectric film on the surface, the reflection loss of light is reduced, thereby improving the clarity of observation. At the same time, the double-layer sealing ring adopts a labyrinth design, the inner sealing ring mainly bears the airtight sealing function, and the outer sealing ring plays a role of dustproof and secondary protection, thereby significantly improving the reliability of the overall sealing, and the stainless steel fixed frame adopts a split design, and the bolt pre-tightening force is evenly distributed, so that the entire observation window 106 can maintain a stable sealing performance in a high temperature environment, which is conducive to long-term reliable operation.

[0095] The air inlet 103 is farther away from the air exhaust port 104 than the observation window 106, that is, the air inlet 103 and the air exhaust port 104 are respectively located on both sides of the observation window 106 in the first direction X, so that the air flow has a longer gas flow path in the process chamber 101, which is beneficial to improving the uniformity of gas distribution, allowing volatiles to be discharged in time, ensuring the gas environment quality during the wafer baking process, making the process more controllable, and helping to improve product yield.

[0096] like Figure 7As shown, a stepped hole 113 extending along the second direction is provided on the side wall of the process chamber 101b at the bottom; the maintenance structure 108 includes: a stepped boss structure 114, which corresponds to the stepped hole 113 and is installed on the stepped hole 113.

[0097] Specifically, the stepped hole 113 includes: a first hole 113a and a second hole 113b connected to the first hole 113a, and the size of the second hole 113b is smaller than the first hole 113a. The stepped boss structure 114 includes: a main body 114a and a first convex part 114b located on the main body 114a. When the stepped boss structure 114 is installed on the stepped hole 113, the first convex part 114b is arranged in the second hole 113b, and the main body 114a is arranged in the first hole 113a.

[0098] It should also be noted that the thickness of the area in the maintenance structure 108 for installing the observation window 106 is greater. As an example, the stepped boss structure 114 further includes: a second raised portion 114c, which is located on a side of the main body portion 114a away from the first raised portion 114b.

[0099] The area of ​​the maintenance structure 108 used to install the observation window 106 has a greater thickness, which is beneficial to the installation and fixation of the observation window 106; in addition, the area of ​​the maintenance structure 108 used to install the observation window 106 has a greater thickness, which is beneficial to reducing the heat loss at the observation window 106 in the bottom process chamber 101b, and also provides a process space for the sealing ring matching the observation window 106.

[0100] The exhaust port 104 is in communication with the process chamber 101 , and is located on the same side of the plurality of air inlets 103 in the first direction X.

[0101] The exhaust port 104 is located on the same side of the multiple air inlets 103, that is, the exhaust port 104 and the air inlet 103 are arranged at intervals in the first direction X, which forms a directional gas flow path in the first direction X, so that the gas in the process chamber 101 can flow effectively, thereby improving the gas utilization efficiency, which is beneficial to the uniformity of gas distribution in the process chamber 101, allowing volatiles to be discharged in time, so that the wafer can be baked in a stable and uniform gas environment, which is beneficial to improving the baking quality of the wafer.

[0102] In this embodiment, the number of the exhaust port 104 in each process chamber 101 is one, and the exhaust port 104 is located at the center of the process chamber 101 in the second direction Y.

[0103] The single exhaust port 104 is located at the center of the second direction Y of the process chamber 101, so that it can form a directional and symmetrical airflow path with the multiple air inlets 103, so that the gas flow in the chamber is more uniform and controllable, thereby ensuring the stability of the gas environment during the process, which is beneficial to improving the baking quality of the wafer. In addition, from the perspective of temperature uniformity, the single exhaust port 104 is located at the center of the second direction Y of the process chamber 101, so that the gas converges from both sides to the center of the second direction Y to form a symmetrical airflow field. This airflow organization method can promote the uniform diffusion of heat in the process chamber 101, and also ensure that the inert gas introduced can be fully mixed in the chamber, thereby effectively maintaining the uniformity of the temperature inside the process chamber 101.

[0104] In other embodiments, Fig. 9 As shown, in each process chamber 101, the number of exhaust ports 104a is the same as the number of bases 102a, and corresponds one-to-one with the bases 102a. During the wafer baking process, the volatile substances on each wafer can be discharged from the process chamber 101 in time through their respective corresponding exhaust ports 104a, avoiding the volatile substances of one wafer from settling on another wafer, which is beneficial to improving the wafer baking quality.

[0105] In this embodiment, the wafer baking chamber further includes: an exhaust buffer chamber 110 located on the side wall of the top process chamber 101a in the first direction X and connected to the top process chamber 101a; and an exhaust port 104 is disposed at the bottom of the exhaust buffer chamber 110 .

[0106] The exhaust buffer chamber 110 is connected to the top process chamber 101a, and the exhaust port 104 is located at the bottom of the exhaust buffer chamber 110, so that the gas in the process chamber 101 when working first enters the exhaust buffer chamber 110 from the process chamber 101, and then is discharged in an orderly manner through the exhaust port 104 arranged at the bottom of the exhaust buffer chamber 110, thereby forming a directional flow path in the process chamber 101 together with the air inlet 103, thereby improving the uniformity of gas distribution and allowing volatiles to be discharged in time. In addition, since the exhaust port 104 is not directly arranged in the process chamber 101, the gas can be buffered and cooled when passing through the exhaust buffer chamber 110, effectively avoiding the direct loss of heat in the process chamber 101, and ensuring the stability of the temperature environment inside the process chamber 101, which is of great significance for the wafer baking process that needs to be carried out under specific temperature conditions, thereby improving the baking quality of the wafer.

[0107] In this embodiment, there are two process chambers 101, namely, a top process chamber 101a and a bottom process chamber 101b. In the first direction X, the gas extraction port 104 corresponding to the bottom process chamber 101b and the gas extraction port 104 corresponding to the top process chamber 101a are respectively located on both sides of the side wall of the chamber 100 in the first direction X.

[0108] The exhaust port 104 corresponding to the bottom process chamber 101b and the exhaust port 104 corresponding to the top process chamber 101a are respectively located on both sides of the side wall of the chamber 100 in the first direction X, that is, the exhaust ports 104 of the bottom process chamber 101b and the top process chamber 101a are staggered, so that the bottom process chamber 101b and the top process chamber 101a form independent airflow channels, ensuring the integrity and independence of their respective airflow paths, and effectively avoiding the airflow interference between the bottom process chamber 101b and the top process chamber 101a, so that the gas flow in each chamber is more uniform and controllable, thereby facilitating independent maintenance of the bottom process chamber 101b and the top process chamber 101a, and improving the maintainability of the wafer baking chamber. Therefore, even if one of the chambers needs maintenance, the other process chamber 101 can continue to work, so that the utilization efficiency of the wafer baking chamber is improved; at the same time, this layout is conducive to maintaining the stability of the airflow during the process through the reasonable arrangement of the wafer transfer port.

[0109] Specifically, on the horizontal projection plane, the exhaust port 104 of the bottom process chamber 101b is located on the inner side of the side wall of the chamber 100, and the exhaust port 104 of the top process chamber 101 is located on the outer side of the side wall of the chamber 100. It should be noted that the side wall of the chamber 100 here refers to the side wall of the chamber 100 opposite to the wafer transfer port in the first direction X (such as Figure 1 The side wall indicated by 1001 in FIG.

[0110] The exhaust port 104 of the bottom process chamber 101b and the exhaust port 104 of the top process chamber 101a are used to connect with different exhaust channels, so that the exhaust channels of the top process chamber 101a and the bottom process chamber 101b are independent of each other and do not affect each other. On the horizontal projection plane, by setting the exhaust port 104 of the bottom process chamber 101b on the inner side of the side wall of the chamber 100, and setting the exhaust port 104 of the top process chamber 101a on the outer side of the side wall of the chamber 100, and making the exhaust ports 104 of the two process chambers 101 respectively located on both sides of the first direction X, the structure avoids interference between the exhaust channels corresponding to the bottom process chamber 101b and the top process chamber 101a, so that the two process chambers 101 can form independent and stable gas flow paths, thereby ensuring the uniformity and fluidity of gas distribution in each process chamber 101, thereby improving the exhaust efficiency, making the process more stable and controllable, and helping to improve the baking quality of the wafer. In addition, the exhaust port 104 of the bottom process chamber 101b is located on the inner side of the chamber side wall, so that the exhaust channel of the bottom process chamber 101b can be tightly integrated with the support structure for installing the wafer baking chamber, thereby reducing the occupied space.

[0111] In other embodiments, on a horizontal projection plane, the exhaust port of the bottom process chamber is located on the outside of the side wall of the chamber, and the exhaust port of the top process chamber is located on the inside of the side wall of the chamber.

[0112] In this embodiment, the gas extraction port 104 extends in a vertical direction. During the operation of the wafer baking chamber, the gas extraction port 104 is connected to an external negative pressure generating device so that gas is extracted from the gas extraction port 104 .

[0113] In the wafer baking chamber, the exhaust port 104 is connected to an external negative pressure generating device, so that gas is extracted from the exhaust port 104, wherein the exhaust port 104 extends in a vertical direction, so that the process chamber 101 can form a vertical exhaust channel 111, and form a stable directional gas flow path with the air inlets 103 symmetrically arranged on both sides, so that the gas environment in each process chamber 101 remains consistent, thereby effectively improving the fluidity and distribution uniformity of the gas, so that volatiles are discharged in time, so that the wafer baking chamber can provide a stable and controllable process environment for multiple wafers at the same time; specifically, the vertically extended exhaust port 104 enables the gas in the process chamber 101 to be connected to the external negative pressure generating device through the vertically arranged exhaust channel 111, so that the negative pressure generating device can be arranged at the bottom of the wafer baking chamber, making maintenance and operation more convenient.

[0114] In other embodiments, the exhaust port extends along the first direction. The exhaust port extends along the first direction, that is, the extension direction of the exhaust port is approximately consistent with the main flow direction of the gas in the chamber, thereby forming a directional flow path from the air inlet to the exhaust port, thereby ensuring the effective fluidity of the gas in the process chamber, which is conducive to ensuring the uniformity and stability of the gas distribution inside the process chamber, making the processing environment of the wafer more controllable, and is conducive to improving the baking quality of the wafer.

[0115] In this embodiment, a wafer transfer port (not shown) is disposed on a side wall of the process chamber 101 in the first direction X, the air inlet 103 is disposed close to the wafer transfer port, and the air exhaust port 104 is disposed away from the wafer transfer port.

[0116] The wafer transfer port needs to have a sufficiently large opening to facilitate the placement and removal of wafers, which may cause external air to enter the process chamber 101 through the opening and affect the process environment. Therefore, by setting the air inlet 103 at a position close to the wafer transfer port and setting the air exhaust port 104 at a position far away from the wafer transfer port, and the air exhaust port 104 is not set on the same side of the process chamber 101 as the wafer transfer port, a directional gas flow path from the air inlet 103 to the air exhaust port 104 is formed in the process chamber 101, thereby preventing external air contamination and ensuring the fluidity of the gas in the process chamber 101. Therefore, not only the gas utilization efficiency is improved, but also the stability of the internal environment of the process chamber 101 is ensured, and ultimately the baking quality of the wafer is significantly improved.

[0117] In this embodiment, the chamber 100 includes two process chambers 101, namely a top process chamber 101a and a bottom process chamber 101b. The wafer baking chamber includes: an upper gate valve 114, which is arranged at the wafer transfer port of the top process chamber 101a, and is used to open or close the wafer transfer port; a lower gate valve 115, which is arranged at the wafer transfer port of the bottom process chamber 101b, and is used to open or close the wafer transfer port.

[0118] The top process chamber 101a and the bottom process chamber 101b are respectively equipped with an upper gate valve 114 and a lower gate valve 115. The design of independent gate valves enables the top process chamber 101a and the bottom process chamber 101b to realize a time-differential alternating wafer transmission working mode, thereby ensuring the continuity and stability of the production process, greatly improving the production efficiency of semiconductor equipment, and helping to reduce production costs and improve equipment utilization.

[0119] Fig.10 is a schematic cross-sectional structural diagram of a semiconductor device according to an embodiment of the present invention, Fig.11 is a structural schematic diagram of a semiconductor device according to an embodiment of the present invention from one perspective, Fig.12 It is a schematic diagram of the isometric structure of a semiconductor device according to an embodiment of the present invention.

[0120] refer to Figures 10 to 12 The present invention also provides a semiconductor device. The semiconductor device includes: a wafer baking chamber, each process chamber 101 has a wafer transfer port; a transfer device (not shown in the figure), corresponding to the wafer transfer port, used to take the baked wafer out of the process chamber 101, or put the wafer to be baked into the wafer baking chamber; a negative pressure generating device 112, the number of the negative pressure generating devices 112 is multiple, and the negative pressure generating devices 112 correspond to and communicate with the exhaust port 104 of the process chamber 101 through the exhaust channel 111.

[0121] In the semiconductor device provided in the embodiment of the present invention, the wafer baking chamber adopts a structure of multiple stacked process chambers 101, and multiple bases 102 for carrying wafers are arranged at intervals in each process chamber 101, thereby significantly improving the wafer processing capacity by fully utilizing the vertical space. Each process chamber 101 is provided with a wafer transfer port, and a precise correspondence with the wafer transfer port is achieved through a transfer device, so that the baked wafer can be automatically taken out of the process chamber 101, or the wafer to be baked can be placed in the process chamber 101, thereby greatly improving the production efficiency. In terms of gas flow direction, the gas inlet 103 of the process chamber 101 is located on one side of the first direction X, and is respectively arranged on two opposite side walls in the second direction Y. The gas extraction port 104 is located on one side of the multiple gas inlets 103 when connected to the process chamber 101, so that the gas can form a directional flow path from the gas inlet 103 to the gas extraction port 104 in the process chamber 101. At the same time, since each process chamber 101 is equipped with an independent negative pressure generating device 112 connected to the gas extraction port 104, it is conducive to the independent and precise control of the internal gas environment of each process chamber 101. This structural design not only ensures the uniformity of gas distribution in the process chamber 101, so that volatiles are discharged in time, and the baking quality and uniformity of the wafer are improved, but also significantly improves the space utilization of the overall equipment through the vertical stacking layout of multiple process chambers 101.

[0122] In this embodiment, the conveying device is a three-axis manipulator. The three-axis manipulator realizes the automatic conveying and precise positioning of the wafer through precise motion control in the first direction X, the second direction Y, and the vertical direction, which is beneficial to the reliability and stability of the wafer conveying between the top process chamber 101a and the bottom process chamber 101b. Under the conveying strategy of setting the time difference, it is beneficial to improve the working efficiency of the semiconductor equipment, and to improve the overall production capacity and yield.

[0123] In this embodiment, the negative pressure generating device 112 is a molecular pump, which can quickly pump the process chamber 101 to a high vacuum state, thereby preventing the wafer surface from absorbing impurities or moisture, thereby improving the purity and quality of the wafer.

[0124] In this embodiment, the semiconductor device further includes: a heating unit (not shown), which is disposed in the wafer baking chamber and is used to make the temperature in each process chamber 101 reach the temperature environment required for wafer baking.

[0125] It should be noted that the top process chamber 101a and the bottom process chamber 101b are respectively equipped with independent negative pressure generating devices. The gate valves of each process chamber 101 are used to ensure that the interior of the process chamber 101 is in a closed space when closed, so that the negative pressure generating device 112 can work effectively to evacuate the process chamber 101 into a vacuum environment. At the same time, the top process chamber 101a and the bottom process chamber 101b realize the work of transferring wafers through a three-axis manipulator, and the wafer taking actions of the two process chambers 101 are coordinated through the time difference to ensure the orderly progress of the process. In addition, the two process chambers 101 are provided with independent air inlets 103 and exhaust ports 104, which cooperate with their own independent gate valves to ensure the uniformity and consistency of the gas environment.

[0126] In the embodiment of the present invention, the specific working process of the wafer baking chamber with two process chambers 101 is as follows: first, the upper gate valve 114 of the top process chamber 101a and the lower gate valve 115 of the bottom process chamber 101b are closed at the same time, and the interiors of the top process chamber 101a and the bottom process chamber 101b are both closed to form a closed space; then, the air extraction port 104 is connected to the external molecular pump through the air extraction channel 111, so that the molecular pump extracts the internal space of the process chamber 101 into a vacuum environment. Subsequently, an inert gas is introduced into the top process chamber 101a and the bottom process chamber 101b through the air inlet, so that the gas environment of the top process chamber 101a and the bottom process chamber 101b is consistent, and at the same time, the heating unit of the entire chamber 100 heats the interior of the chamber 100 to the required temperature environment. During the wafer baking process, the chemical properties of the inert gas are stable and will not react with the wafer surface. It can protect the surface quality of the wafer during high-temperature baking and help remove impurities generated during the process.

[0127] In this embodiment, the exhaust port 104 of the bottom process chamber 101b and the exhaust port 104 of the top process chamber 101a are connected to different exhaust channels 111, so that the exhaust channels 111 of the top process chamber 101a and the bottom process chamber 101b are independent of each other and do not affect each other. On the horizontal projection plane, by setting the exhaust port 104 of the bottom process chamber 101b on the inner side of the side wall of the chamber 100, and setting the exhaust port 104 of the top process chamber 101a on the outer side of the side wall of the chamber 100, and making the exhaust ports 104 of the two process chambers 101 respectively located on both sides of the first direction X, the structure avoids interference between the exhaust channels 111 corresponding to the bottom process chamber 101b and the top process chamber 101a, so that the two process chambers 101 can form independent and stable gas flow paths, thereby ensuring the uniformity and fluidity of the gas distribution in each process chamber 101, thereby improving the exhaust efficiency, allowing volatiles to be discharged in time, making the wafer baking process more stable and controllable, and helping to improve the baking quality of the wafer. In addition, the exhaust port 104 of the bottom process chamber 101b is located on the inner side of the chamber side wall, so that the exhaust channel 111 of the bottom process chamber 101b can be tightly integrated with the support structure for installing the wafer baking chamber, reducing the occupied space.

[0128] When the internal environment of the wafer baking chamber reaches a stable state, the upper gate valve 114 or the lower gate valve 115 is opened in no particular order but only one process chamber 101 is opened at a time, so that the wafer transfer work is realized by the three-axis manipulator. Under normal working conditions, the top process chamber 101a and the bottom process chamber 101b can accommodate a total of four wafers for baking at the same time, and two wafers are placed on the base 102 of one of the process chambers 101 by the manipulator. It should be noted that a heating wire is provided in the base 102, and the wafer will not be in direct contact with the base 102. A silicon wafer will be provided above the base 102 as a uniform heat layer to achieve indirect heating of the wafer and ensure that the wafer is heated evenly during the baking process.

[0129] When the wafer in a process chamber 101 is baked, the gate valve of the process chamber 101 is first opened, and the wafer is taken out and transferred by the robot, and then the gate valve is closed until it is opened again when the wafer is put in next time. For the wafer that has been baked in another process chamber 101, the robot performs the same wafer taking action process. This design makes the top process chamber 101a and the bottom process chamber 101b completely independent when working, without interfering with each other, and when one process chamber 101 cannot work, the other process chamber 101 can still continue to work.

[0130] During the operation of the wafer baking chamber, the conditions inside the process chamber 101 can be monitored in real time through the observation windows 106 set on the two side walls of the process chamber 101 in the second direction Y. When an abnormality occurs in the top process chamber 101a, it is necessary to first extract the gas in the top process chamber 101a through the exhaust port 104 and destroy the vacuum environment, so as to open the cover plate 105 to perform maintenance work inside the top process chamber 101a; when an abnormality occurs in the bottom process chamber 101b, it is also necessary to extract the gas in the bottom process chamber 101b through the exhaust port 104 and destroy the vacuum environment, and then remove the maintenance structure 108 to perform maintenance work inside the bottom process chamber 101b. It should be noted that the design of the maintenance structure 108 can maintain the bottom process chamber 101b without affecting the top process chamber 101a, thereby reducing the difficulty of maintenance.

[0131] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined by the claims.

Claims

1. A wafer baking chamber, characterized in that: include: A chamber body, comprising a plurality of process chambers arranged in a stacked manner, wherein each of the process chambers is provided with a plurality of bases for carrying wafers at intervals, and the process chamber includes a first direction in a plane and a second direction perpendicular to the first direction; An air inlet is connected to the process chamber and is located on one side of the process chamber in the first direction. There are multiple air inlets, which are respectively arranged on two side walls opposite to each other in the second direction. An exhaust port is connected to the process chamber and is located on the same side of the multiple air inlets in the first direction.

2. The wafer baking chamber according to claim 1, characterized in that: The air inlet is arranged toward the base, and the air inlet is higher than the base in a vertical direction.

3. The wafer baking chamber according to claim 1, characterized in that: In the first direction, the area to which the extension line of the air inlet is aligned is located between the center of the base and the side wall of the cavity.

4. The wafer baking chamber according to claim 1, characterized in that: The air inlets are arranged in pairs on two side walls in the second direction, and the oppositely arranged air inlets are coaxially arranged.

5. The wafer baking chamber according to claim 1, characterized in that: The chamber comprises two process chambers, namely a top process chamber and a bottom process chamber; In the first direction, the exhaust port corresponding to the bottom process chamber and the exhaust port corresponding to the top process chamber are respectively located on both sides of the chamber side wall in the first direction.

6. The wafer baking chamber according to claim 5, characterized in that: On a horizontal projection plane, the exhaust port of the bottom process chamber is located on the inner side of the side wall of the chamber, and the exhaust port of the top process chamber is located on the outer side of the side wall of the chamber; Alternatively, on a horizontal projection plane, the exhaust port of the bottom process chamber is located on the outside of the side wall of the chamber, and the exhaust port of the top process chamber is located on the inside of the side wall of the chamber.

7. The wafer baking chamber according to claim 1, characterized in that: The air suction port extends along a vertical direction, or the air suction port extends along a first direction.

8. The wafer baking chamber according to claim 1, wherein: The cavity is in the shape of a rectangular parallelepiped.

9. The wafer baking chamber according to claim 1, wherein: A wafer transfer port is arranged on a side wall of the process chamber in a first direction, the air inlet is arranged close to the wafer transfer port, and the air exhaust port is arranged away from the wafer transfer port.

10. The wafer baking chamber according to claim 9, characterized in that: The chamber comprises two process chambers, namely a top process chamber and a bottom process chamber; The wafer baking chamber further comprises: an upper gate valve, which is arranged at the wafer transfer port of the top process chamber and is used to open or close the wafer transfer port; The lower gate valve is arranged at the wafer transfer port of the bottom process chamber and is used to open or close the wafer transfer port.

11. The wafer baking chamber according to claim 1, characterized in that: The plurality of process chambers are aligned at both ends of the first direction, and the plurality of process chambers are aligned at both ends of the second direction.

12. The wafer baking chamber according to claim 1, wherein: The number of the air inlets is the same as the number of the bases.

13. The wafer baking chamber according to claim 1, characterized in that: The plurality of bases in the process chamber are arranged at intervals along the second direction.

14. The wafer baking chamber according to claim 13, characterized in that: In each of the process chambers, the number of the exhaust ports is the same as the number of the bases, and corresponds one-to-one with the bases; Alternatively, the number of the exhaust port is one, and the exhaust port is located at the center of the process chamber in the second direction.

15. The wafer baking chamber according to claim 1, wherein: The wafer baking chamber further includes: a maintenance structure, which is detachably arranged in the process chamber below the topmost process chamber and is located on the side wall of the process chamber below in the second direction.

16. The wafer baking chamber according to claim 15, characterized in that: The maintenance structure includes: Fixed structure; An observation window, arranged on the fixed structure; The air inlet passes through the fixed structure and is spaced apart from the observation window in the first direction. The air inlet is farther away from the air extraction port than the observation window.

17. The wafer baking chamber according to claim 15, wherein: A stepped hole extending along the second direction is provided on the side wall of the process chamber at the bottom in the second direction; The maintenance structure comprises: a stepped boss structure, the stepped boss structure corresponds to the stepped hole, and the stepped boss structure is installed on the stepped hole.

18. The wafer baking chamber according to claim 17, wherein: The stepped hole comprises: a first hole and a second hole connected to the first hole, and the size of the second hole is smaller than the first hole; The stepped boss structure includes: a main body portion and a first convex portion located on the main body portion, the first convex portion is used to be arranged in the second hole, and the main body portion is used to be arranged in the first hole.

19. The wafer baking chamber according to claim 1, wherein: The wafer baking chamber also includes an air inlet pipeline connected to the air inlet.

20. The wafer baking chamber according to claim 1, wherein: The cavity comprises: A cover plate, detachably arranged on the top of the process chamber; The observation window is arranged on the side wall of the topmost process chamber in the second direction.

21. The wafer baking chamber according to claim 1, wherein: The wafer baking chamber further comprises: a partition structure for isolating adjacent process chambers in a vertical direction, and a heating unit is provided in the partition structure.

22. The wafer baking chamber according to claim 1, wherein: Two bases are arranged in the process chamber, and the two bases are symmetrically arranged in the process chamber.

23. The wafer baking chamber according to claim 1, wherein: In the vertical direction, the positions of the bases in the same process chamber are the same.

24. The wafer baking chamber according to claim 1, wherein: The chamber comprises two process chambers, namely a top process chamber and a bottom process chamber; The wafer baking chamber further includes: an exhaust buffer chamber, which is located on a side wall of the top process chamber in a first direction and is in communication with the top process chamber; The air extraction port is arranged at the bottom of the air extraction buffer chamber.

25. A semiconductor device, characterized in that: include: The wafer baking chamber according to any one of claims 1 to 24, wherein each of the process chambers has a wafer transfer port; A conveying device, corresponding to the wafer conveying port, used to take out the baked wafer from the process chamber, or put the wafer to be baked into the wafer baking chamber; A negative pressure generating device, wherein the number of the negative pressure generating devices is plural, and the negative pressure generating devices correspond one-to-one to and are connected with the exhaust port of the process chamber through an exhaust channel.

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