Discrete device packaging structure with high power density

Abstract

The utility model relates to the technical field of power semiconductor devices, in particular to a high-power-density discrete device packaging structure, which comprises a first frame part, a second frame part, a plastic package shell and a chip which are independent. The first frame part comprises a main body part, a connecting part and a first pin part. The first pin part comprises a vertical part and two protruding parts. The second frame part comprises a second pin part and a third pin part, the second pin part comprises an embedded part and an exposed part, and the third pin part is located on the second frame part and comprises an embedded part and an exposed part. Compared with the prior art, the LED lamp has the advantages that the size of the main body part is large, the thickness is small, the heat dissipation surface faces upwards, and the heat dissipation efficiency is high. The size of the first pin part and the size of the second pin part are both large, parasitic resistance at the pins is reduced, Joule heat generated by the first pin part and the second pin part is reduced when current is too large, the phenomenon of heat concentration is avoided, and therefore the requirement that discrete devices are applied to the working condition of high power density is met.

Description

Technical Field

[0001] The utility model relates to the technical field of power semiconductor devices, in particular to a discrete device packaging structure with high power density. Background Art

[0002] Power semiconductors are key components in the power electronics industry, used in a variety of circuits to achieve power conversion, inversion, and rectification. They are widely used in industrial control, rail transportation, consumer electronics, new energy vehicles, and other fields.

[0003] Power semiconductor devices are currently developing towards higher power density. To increase the power density of power semiconductor devices, the package size of power semiconductor devices will become increasingly compact. The more compact the package size, the worse the heat dissipation effect. This poor heat dissipation effect will ultimately affect the power rating of the power semiconductor device.

[0004] For example, the applicant's prior application for utility model patent 202122101537.5 discloses an "electronic device with a top-surface heat dissipation package structure." This package structure provides good heat dissipation at the chip level, effectively reducing the thermal resistance of discrete devices. However, its small pins and confined heat dissipation space result in poor heat dissipation. In practical applications, heat concentration can occur, potentially leading to the risk of pin burnout due to high temperatures, making it difficult to meet high power density requirements. Utility Model Content

[0005] The purpose of the present invention is to overcome the deficiencies of the prior art and provide a high power density discrete device packaging structure to reduce heat concentration, enlarge the pins, expand the heat dissipation space, and improve the heat dissipation effect.

[0006] In order to achieve the above object, a high power density discrete device packaging structure is designed, which includes an independent first frame part, a second frame part, a plastic package shell and a chip.

[0007] The first frame portion includes a main body portion, a connecting portion and a first pin portion. The first pin portion serves as a drain pin of the discrete device and includes an upright portion and two protruding portions. The upright portion is perpendicular to the main body portion and is a rectangular parallelepiped extending from the left side to the right side of the main body portion and from the bottom to the top of the plastic shell. The protruding portion is located above the upright portion and protrudes to both sides on a side close to the top of the plastic shell.

[0008] The main body of the first frame is a rectangular metal. The surface where the main body is connected to the drain electrode is the electrical connection surface, and the heat dissipation surface is in the same plane as the bottom of the plastic package shell.

[0009] The first frame portion connecting portion extends from one side of the main body portion to one side of the first pin portion, connecting the main body portion and the first pin portion together.

[0010] The second frame portion includes a second pin portion and a third pin portion, the second pin portion includes an embedded portion and an exposed portion, the embedded portion is located inside the plastic shell, and the exposed portion is located outside the plastic shell, the embedded portions are interconnected, and the exposed portions are independent of each other, the third pin portion is located on the second frame portion, consistent with the second pin portion, and has an embedded portion and an exposed portion, and the embedded portion and the exposed portion are independent of each other.

[0011] The bottom surface of the plastic package shell is attached to the radiator, and the top surface is attached to the PCB.

[0012] Compared with the prior art, the utility model has the following advantages:

[0013] The unique design of this utility model results in a larger main body, a thinner thickness, and an upward-facing heat dissipation surface. Based on the definitions of heat conduction and convection, this device exhibits high heat dissipation efficiency. Furthermore, the first and second pins of this discrete device are both larger, formed from multiple small terminals. This reduces parasitic resistance at the pins. When excessive current flows, Joule heating generated by the first and second pins is reduced, preventing heat concentration. This allows discrete devices to be used in high-power density applications. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 , is a schematic diagram of the top view of the structure of the utility model without the plastic-sealed shell.

[0015] Figure 2 , is a bottom structural schematic diagram of the utility model without a plastic-sealed shell.

[0016] Figure 3 , is a schematic diagram of the three-dimensional structure of the present utility model.

[0017] Figure 4 , is a schematic diagram of the three-dimensional structure of the utility model from another angle.

[0018] In the figure: 10 SiCmos chip; 11 lower surface; 110 drain electrode portion; 12 upper surface; 120 source electrode portion; 121 gate electrode portion; 20 frame; 21 first frame portion; 210 main body portion; 2101 electrical connection surface; 2102 heat dissipation surface; 211 connection portion; 212 first pin portion; 2121 upright portion; 2122 protrusion; 2123 protrusion; 22 second frame portion; 220 second pin portion; 2201 embedded portion; 2211 embedded portion; 2202 exposed portion; 2212 exposed portion; 221 third pin portion; 30 plastic package; 31 bottom; 32 top; 40 bonding wire; 41 bonding wire. DETAILED DESCRIPTION

[0019] In order to make the purpose, principle and structure of the present invention more clear, it is further described below with reference to the accompanying drawings and specific embodiments.

[0020] The utility model provides a discrete device packaging structure with high power density, comprising an independent first frame part, a second frame part, a plastic package shell and a chip.

[0021] The first frame portion includes a main body portion, a connecting portion and a first pin portion. The first pin portion serves as a drain pin of the discrete device and includes an upright portion and two protruding portions. The upright portion is perpendicular to the main body portion and is a rectangular parallelepiped extending from the left side to the right side of the main body portion and from the bottom to the top of the plastic shell. The protruding portion is located above the upright portion and protrudes to both sides on a side close to the top of the plastic shell.

[0022] The main body of the first frame is a rectangular metal. The surface where the main body is connected to the drain electrode is the electrical connection surface, and the heat dissipation surface is in the same plane as the bottom of the plastic package shell.

[0023] The first frame portion connecting portion extends from one side of the main body portion to one side of the first pin portion, connecting the main body portion and the first pin portion together.

[0024] The second frame portion includes a second pin portion and a third pin portion, the second pin portion includes an embedded portion and an exposed portion, the embedded portion is located inside the plastic shell, and the exposed portion is located outside the plastic shell, the embedded portions are interconnected, and the exposed portions are independent of each other, the third pin portion is located on the second frame portion, consistent with the second pin portion, and has an embedded portion and an exposed portion, and the embedded portion and the exposed portion are independent of each other.

[0025] The bottom surface of the plastic package shell is attached to the radiator, and the top surface is attached to the PCB.

[0026] Specifically:

[0027] like Figure 1 、 Figure 2 、 Figure 3 、 Figure 4 As shown, the utility model is a discrete device packaging form with high power density. Figure 1 、 Figure 2 They are respectively the top view and bottom view of the discrete device before it is plastic-sealed. Figure 3 、 Figure 4 The three-dimensional structure diagrams of the discrete device after plastic packaging are shown in different angles. The discrete device includes a SiCmos chip 10, a frame 20, and a plastic packaging shell 30.

[0028] The SiC-MOS chip 10 includes a lower surface 11 and an upper surface 12. The lower surface 11 includes a drain electrode portion 110, and the upper surface 12 includes a source electrode portion 120 and a gate electrode portion 121. The frame 20 includes a first frame portion 21 and a second frame portion 22. The first frame portion 21 and the second frame portion 22 are isolated from each other. The first frame portion 21 provides mechanical support and electrical connection for the SiC-MOS chip 10, and the drain electrode portion 110 contacts the first frame portion 21. The plastic package 30 includes a bottom portion 31 adjacent to the lower surface 11 and a top portion 32 adjacent to the upper surface 12.

[0029] The first frame portion 21 of the frame 20 includes a main body 210, a connecting portion 211, and a first pin portion 212. The main body 210 is a rectangular metal body. The surface of the main body 210 connected to the drain electrode portion 110 is an electrical connection surface 2101, and the heat dissipation surface 2102 is coplanar with the bottom 31 of the plastic housing 30. The connecting portion 211 extends from one side of the main body 210 to one side of the first pin portion 212, connecting the main body 210 and the first pin portion 212 together. The first pin portion 212, serving as the drain pin of the discrete device, includes an upright portion 2121 and two protruding portions 2122 and 2123. The upright portion 2121 is a rectangular parallelepiped extending perpendicular to the main body 210 from the left to the right side of the main body 210 and from the bottom 31 to the top 32 of the plastic housing. The protruding portions 2122 and 2123 are located on the upright portion, protruding outward from the side near the top 32 of the plastic housing.

[0030] The second frame portion 22 of the frame 20 includes a second pin portion 220 and a third pin portion 221. The second pin portion 220 serves as the source pin of the discrete device and is composed of multiple separate source pins. The third pin portion 221 serves as the gate pin of the discrete device and is composed of multiple separate gate pins, including an embedded portion 2201, 2211 and an exposed portion 2202, 2212 respectively. The embedded parts 2201 and 2211 are inside the plastic package shell 30, the source pins of the embedded part 2201 are mutually connected rectangular parallelepipeds, the source electrode part 120 of the SiCmos chip 10 is connected to the embedded part 2201 of the second pin part 220 through a bonding wire 40, the gate pins of the embedded part 2211 are independent of each other, and the gate electrode part 121 of the SiCmos chip 10 is connected to the embedded part 2211 of the third pin part 221 through a bonding wire 41. The exposed parts 2202 and 2212 are outside the plastic package shell 30, and the source pins of the exposed part 2202 and the gate pins of the exposed part 2212 are independent of each other, extending from the embedded parts 2201 and 2211 to the top 32 of the plastic package shell 30 respectively.

[0031] When the discrete device is actually used, the bottom surface 31 of the plastic shell faces upward and contacts the heat sink for heat dissipation, and the top surface 32 of the plastic shell faces downward to facilitate pin connection. The first pin portion 212 is connected to the positive pole of the external power supply, the second pin portion 220 is connected to the negative pole of the external power supply, and the third pin portion 221 is connected to the external gate signal.

[0032] The main body 210 is relatively large and thin, with the heat dissipation surface 2102 facing upward. Based on the definitions of heat conduction and convection, the device exhibits high heat dissipation efficiency. Furthermore, the first and second pins 212 and 220 of the discrete device are both relatively large, and are composed of multiple small terminals. This reduces parasitic resistance at the pins. When excessive current is applied, Joule heating generated by the first and second pins 212 and 220 is reduced, preventing heat concentration and thus meeting the requirements for discrete device applications in high-power density conditions.

[0033] The above description is only a specific implementation method of this utility model, but the protection scope of this utility model is not limited thereto. Any technician familiar with this technical field, within the technical scope disclosed by this utility model, can make equivalent substitutions or changes based on the technical solutions and new concepts of this utility model, which should be covered by the protection scope of this utility model.

Claims

1. A high power density discrete device packaging structure, comprising an independent first frame portion, a second frame portion, a plastic package housing and a chip, characterized in that The first frame portion includes a main body portion, a connecting portion and a first pin portion. The first pin portion serves as a drain pin of the discrete device and includes an upright portion and two protruding portions. The upright portion is perpendicular to the main body portion, extending from the left side to the right side of the main body portion and forming a rectangular parallelepiped from the bottom to the top of the plastic shell. The protruding portion is located above the upright portion, and protrudes to both sides on a side close to the top of the plastic shell.

2. A high power density discrete device packaging structure as claimed in claim 1, characterized in that The main body of the first frame part is a rectangular metal, the surface where the main body is connected to the drain electrode part is the electrical connection surface, and the heat dissipation surface is in the same plane as the bottom of the plastic package shell.

3. A high power density discrete device packaging structure as claimed in claim 1, characterized in that The first frame portion connecting portion extends from one side of the main body portion to one side of the first pin portion to connect the main body portion and the first pin portion together.

4. A high power density discrete device packaging structure as claimed in claim 1, characterized in that The second frame portion includes a second pin portion and a third pin portion, the second pin portion includes an embedded portion and an exposed portion, the embedded portion is located inside the plastic package shell, and the exposed portion is located outside the plastic package shell, the embedded portions are interconnected, and the exposed portions are independent of each other, the third pin portion is located on the second frame portion, consistent with the second pin portion, and has an embedded portion and an exposed portion, and the embedded portion and the exposed portion are independent of each other.

5. A high power density discrete device packaging structure as claimed in claim 1, characterized in that The bottom surface of the plastic package shell is attached to the heat sink, and the top surface is attached to the PCB.

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