Multi-chip packaging structure with W-band emission function
By integrating the waveguide probes into a plastic-sealed tube and packaging them in a W-band multi-chip packaging structure, the problem of large insertion loss in W-band emission is solved, and higher chip RF indexes and better chip protection are achieved.
Patent Information
- Application Number
- CN202421323989.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-06-11
- Publication Date
- 2025-02-28
- Estimated Expiration
- 2034-06-11
AI Technical Summary
The prior art has a large problem of insertion and loss in W-band emission, which has affected the improvement of chip index.
By integrating the waveguide probes into the outer edges of the dielectric substrate, and encapsulating the W-band transmitter chip and frequency multiplier chip in a plastic-sealed tube shell, the additional loss is minimized and the chip is protected.
It effectively reduces additional losses outside the chip, improves the chip RF index of the multi-chip packaging structure, and maximizes the protection of the internal bare chip.
Smart Images
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Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of W-band multi-chip packaging, in particular to a multi-chip packaging structure with a W-band transmitting function. Background Art
[0002] Because terahertz band multifunctional chips are difficult to design, complex to manufacture, and have a low yield rate. At present, there are relatively few suitable high-frequency complex multifunctional chips that can be used for W-band transmission. When a multifunctional chip module with complex functions is required, it is necessary to use multiple single-function chips or simple multifunctional chips for packaging. At the same time, in order to minimize unnecessary insertion loss, low-loss transition methods such as waveguide probes are often used (other methods have large losses and will deteriorate chip indicators). However, the terahertz frequency die or chip re-packaging currently used for W-band transmission requires the production of corresponding waveguide probes for transition, which still brings large insertion losses, affecting the further improvement of chip indicators.
[0003] Therefore, it is necessary to provide a technical solution that can further reduce insertion loss to improve chip indicators of a multifunctional chip with W-band transmission function. Utility Model Content
[0004] In order to solve the above technical problems, the utility model provides a multi-chip packaging structure with W-band transmission function.
[0005] The utility model provides a multi-chip packaging structure with a W-band transmitting function, comprising a waveguide probe, a W-band transmitting chip, a frequency multiplier chip, a dielectric substrate, and a plastic-sealed tube shell;
[0006] The waveguide probe is integrated and arranged outside the edge of the dielectric substrate, and its input end is electrically connected to the radio frequency output end of the W-band transmitting chip;
[0007] The W-band transmitting chip and the frequency multiplier chip are both arranged in the main body of the dielectric substrate;
[0008] The LO input terminal of the W-band transmitting chip is electrically connected to the RF output terminal of the frequency multiplier chip;
[0009] The radio frequency input end of the frequency multiplier chip is used to receive a radio frequency input signal;
[0010] The W-band transmitting chip and the frequency multiplier chip arranged on the main body of the dielectric substrate are packaged in the plastic package shell.
[0011] In a possible implementation manner, the waveguide probe is integrally connected to the substrate of the dielectric substrate in the same plane.
[0012] In a possible implementation, the main body of the dielectric substrate is separately provided with a sunken hollow area;
[0013] The W-band transmitting chip and the frequency multiplier chip are both arranged in the sunken hollow area.
[0014] In a possible implementation, the sunken hollow area is provided with a plurality of first grounding holes;
[0015] The plurality of first grounding holes in the sunken hollow area are evenly distributed to form a grounding hole array.
[0016] In a possible implementation manner, the first grounding hole is a solid grounding setting.
[0017] In a possible implementation, the frequency multiplier chip is a double frequency chip.
[0018] In a possible implementation manner, the waveguide probe is a coplanar waveguide probe.
[0019] In a possible implementation manner, a TaN absorption layer is plated inside the plastic package shell.
[0020] In a possible implementation, the edge of the main body of the dielectric substrate is further provided with a first power supply interface, a second power supply interface, a radio frequency input interface, and a tube shell ground interface;
[0021] The voltage input terminal of the W-band transmitting chip is electrically connected to the first power supply interface, and the ground terminal thereof is electrically connected to the shell ground interface;
[0022] The voltage input terminal of the frequency multiplier chip is electrically connected to the second power supply interface, and the RF input terminal of the frequency multiplier chip is electrically connected to the RF input interface.
[0023] In a possible implementation, the main body of the dielectric substrate is further provided with chip capacitors at the voltage input terminal, the ground terminal, and the voltage input terminal of the frequency multiplier chip close to the W-band transmitting chip;
[0024] The voltage input terminal, the ground terminal, and the voltage input terminal of the W-band transmitting chip are electrically connected to the chip capacitors close to them respectively;
[0025] A second grounding hole is arranged around the chip capacitor;
[0026] The chip capacitor is electrically connected to the second grounding holes around it for grounding filtering.
[0027] The technical solution provided by the utility model has at least the following beneficial effects:
[0028] By integrating the waveguide probe on the outside of the edge of the dielectric substrate, the additional loss outside the chip can be minimized, and the chip RF indicators of the multi-chip packaging structure with W-band transmission function can be guaranteed to the maximum extent; at the same time, the W-band transmission chip and the frequency multiplier chip are packaged in a plastic tube shell, which can maximize the protection of the internal bare chip W-band transmission chip and frequency multiplier chip. BRIEF DESCRIPTION OF THE DRAWINGS
[0029] Figure 1 A schematic diagram of the assembly layout of a multi-chip package structure with W-band transmission function provided by an embodiment of the utility model;
[0030] Figure 2 A structural diagram of a dielectric substrate in a multi-chip packaging structure with W-band transmission function provided by an embodiment of the utility model;
[0031] Figure 3 A schematic diagram of the metal layer areas on the front and back sides of the dielectric substrate in the multi-chip packaging structure with W-band transmission function provided by an embodiment of the utility model;
[0032] Figure 4 A structural diagram of a plastic package shell in a multi-chip packaging structure with W-band transmission function provided by an embodiment of the utility model;
[0033] In the attached drawings, 11, waveguide probe; 12, W-band transmitting chip; 13, frequency multiplier chip; 14, dielectric substrate; 15, plastic-encapsulated tube shell; 16, sunken hollow area; 17, first grounding hole; 18, first power supply interface; 19, second power supply interface; 20, RF input interface; 21, tube shell ground interface; 22, chip capacitor; 23, second grounding hole. DETAILED DESCRIPTION
[0034] In order to deepen the understanding of the present invention, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. The embodiments are only used to explain the present invention and do not limit the protection scope of the present invention.
[0035] Please refer to Figures 1 to 4 The utility model provides a multi-chip packaging structure with a W-band transmitting function, comprising a waveguide probe 11, a W-band transmitting chip 12, a frequency multiplier chip 13, a dielectric substrate 14, and a plastic package shell 15;
[0036] The waveguide probe 11 is integrated and disposed on the outer side of the edge of the dielectric substrate 14, and its input end is electrically connected to the radio frequency output end RFout of the W-band transmitting chip 12;
[0037] The W-band transmitting chip 12 and the frequency multiplier chip 13 are both arranged in the main body of the dielectric substrate 14;
[0038] The LO input terminal of the W-band transmitting chip 12 is electrically connected to the RF output terminal RFout of the frequency multiplier chip 13;
[0039] The radio frequency input terminal RFin of the frequency multiplier chip 13 is used to receive a radio frequency input signal;
[0040] The W-band transmitting chip 12 and the frequency multiplier chip 13 disposed on the main body of the dielectric substrate 14 are packaged in the plastic package shell 15 .
[0041] In this embodiment, the waveguide probe 11 can adopt a W-band coplanar waveguide probe, which is used to transmit the signal output by the W-band transmitting chip 12 in the form of electromagnetic waves. The W-band transmitting chip 12 adopts a conventional model, and its LO input end can receive a 30-32.3GHz signal, which is output to the W-band transmitting chip 12 after 3-times frequency processing and DA drive amplification. The frequency multiplier chip 13 can adopt a conventional frequency multiplication chip, such as a double frequency chip. The dielectric substrate 14 and the plastic package tube shell 15 are both conventional models. The dielectric substrate 14 can adopt an AIN substrate, and its main body can be designed in a rectangular shape, and the part of the outer side of its edge for integrating the waveguide probe 11 can be designed as a small-sized rectangle.
[0042] In specific implementation, the relevant electrical connections can be realized by gold wires, for example, the input end of the waveguide probe 11 and the RF output end RFout of the W-band transmitting chip 12 can be electrically connected by gold wires, and the LO input end of the W-band transmitting chip 12 and the RF output end RFout of the frequency multiplier chip 13 can also be electrically connected by gold wires. A solid grounding hole can be set around the input end of the waveguide probe 11. Figure 1 The shaded area in the figure is the bonding alignment area of the plastic package tube shell 15. Figure 4 The plastic package tube shell 15 in the embodiment uses epoxy resin to bond the dielectric substrate 14 to the fixed area of the plastic package tube shell 15 in the bonding alignment area, so that the W-band transmitting chip 12 and the frequency multiplier chip 13 can be protected, so that the multi-chip packaging structure has certain three-proof functions. Figure 4 The upper figure is a top view of the plastic package tube shell 15, and the lower figure is a cross-sectional view of the top view of the plastic package tube shell 15 in the CC direction. The outer shell height of the plastic package tube shell 15 can be set to 0.8mm, the inner shell height can be set to 0.65mm, the outer shell width can be set to 4mm, and the inner shell width can be set to 3.8mm. The specific structure of the plastic package tube shell 15 can be adjusted according to actual implementation needs.
[0043] It should be pointed out that the waveguide probe 11 and the dielectric substrate 14 are designed as one body, which can maximize the integration and facilitate the subsequent waveguide cavity integration. The present technical solution provides an improved multi-chip packaging structure, which combines multiple single-function chips to obtain a multi-chip module with functions such as reception and up-conversion. When the W-band transmitting chip 12 adopts 3 times the frequency and the frequency multiplier chip 13 adopts 2 times the frequency, the multi-chip packaging structure also has a 6-times frequency function. At the same time, the multi-chip packaging structure implements tube shell protection through a plastic tube shell 15, which can maximize the protection of the internal W-band transmitting chip 12 and the frequency multiplier chip 13 bare chips.
[0044] In a possible implementation, the waveguide probe 11 and the substrate of the dielectric substrate 14 are integrally connected in the same plane.
[0045] In this embodiment, the waveguide probe 11 can adopt a W-band coplanar waveguide probe, and the W-band coplanar waveguide probe is integrated with the substrate of the dielectric substrate 14, which can minimize the additional loss outside the chip and maximize the chip RF index of the multi-chip packaging structure with W-band transmission function. At the same time, it can further facilitate waveguide integration, greatly improve the subsequent design efficiency, and facilitate product iteration.
[0046] In a possible implementation, the main body of the dielectric substrate 14 is separately provided with a sunken hollow area 16;
[0047] The W-band transmitting chip 12 and the frequency multiplier chip 13 are both disposed in the sunken hollow area 16 .
[0048] In this embodiment, Figure 2 The upper figure is a top view of the dielectric substrate 14, and the lower figure is a cross-sectional view based on the AA direction in the top view of the dielectric substrate 14. The sunken hollow area 16 is obtained by sunken hollowing the dielectric substrate 14. In a specific implementation, the specific size of the dielectric substrate 14 can be adjusted according to actual needs. For example, the thickness of the dielectric substrate 14 can be 0.127 mm, and the sunken hollow area 16 is a chip welding area sunken by 0.03 mm.
[0049] In a possible implementation, the sunken hollow area 16 is provided with a plurality of first grounding holes 17;
[0050] The plurality of first grounding holes 17 in the sunken hollow area 16 are evenly distributed to form a grounding hole array.
[0051] In this embodiment, Figure 2 The first grounding hole 17 is a conventional grounding hole, and the diameter of the grounding hole can be 0.12 mm. The grounding hole array is used for heat dissipation and grounding of the W-band transmitting chip 12 and the frequency multiplier chip 13.
[0052] In a possible implementation, the first grounding hole 17 is a solid grounding setting.
[0053] In this embodiment, Figure 3 The upper figure in the figure is the metal layer area on the front side of the dielectric substrate 14, and the lower figure is the metal layer area on the back side of the dielectric substrate 14. The first grounding hole 17 is a solid metal medium. The first grounding hole 17 penetrates from the front side of the dielectric substrate 14 to connect to the metal layer area on the back side of the dielectric substrate 14 to achieve grounding.
[0054] In a possible implementation, the frequency multiplier chip 13 is a double frequency chip.
[0055] In this embodiment, the frequency multiplier chip 13 is a double frequency chip, and its RF input terminal RFin can receive a 12-20 GHz signal, and through double frequency processing and DA drive amplification, it can output a 24-40 GHz signal through its RF output terminal RFout.
[0056] In a possible implementation, the waveguide probe 11 is a coplanar waveguide probe.
[0057] In this embodiment, the coplanar waveguide probe adopts a standard coplanar waveguide probe, which is used to transmit the signal output by the W-band transmitting chip 12 in the form of electromagnetic waves.
[0058] In a possible implementation, a TaN absorption layer is plated inside the plastic package tube shell 15 .
[0059] In this embodiment, the TaN absorption layer is used to absorb electromagnetic waves. Figure 4 The upper figure is a top view of the plastic package tube shell 15 , and the lower figure is a cross-sectional view based on the CC direction in the top view. A 0.004 mm TaN absorption layer can be uniformly plated inside the plastic package tube shell 15 .
[0060] In a possible implementation, the edge of the main body of the dielectric substrate 14 is further provided with a first power supply interface 18, a second power supply interface 19, a radio frequency input interface 20, and a tube shell ground interface 21;
[0061] The voltage input terminal VD of the W-band transmitting chip 12 is electrically connected to the first power supply interface 18, and the ground terminal VG thereof is electrically connected to the shell ground interface 21;
[0062] The voltage input terminal VD of the frequency multiplier chip 13 is electrically connected to the second power supply interface 19 , and the RF input terminal RFin of the frequency multiplier chip 13 is electrically connected to the RF input interface 20 .
[0063] In this embodiment, the first power supply interface 18, the second power supply interface 19, the RF input interface 20, and the tube shell ground interface 21 are interfaces provided by the multi-chip packaging structure. The first power supply interface 18 and the second power supply interface 19 are both conventional power supply interfaces. In a specific implementation, the RF input end of the frequency multiplier chip 13 and the RF input interface 20 can be electrically connected by gold wire.
[0064] In a possible implementation, the main body of the dielectric substrate 14 is further provided with chip capacitors 22 near the voltage input terminal VD of the W-band transmitting chip 12, the ground terminal VG, and the voltage input terminal VD of the frequency multiplier chip 13;
[0065] The voltage input terminal VD of the W-band transmitting chip 12, the ground terminal VG, and the voltage input terminal VD of the frequency multiplier chip 13 are electrically connected to the chip capacitor 22 close to them respectively;
[0066] A second grounding hole 23 is provided around the chip capacitor 22;
[0067] The chip capacitor 22 is electrically connected to the second grounding holes 23 around it for grounding filtering.
[0068] In this embodiment, the chip capacitor 22 is a conventional type and is used for power supply filtering. The second grounding hole 23 is a conventional grounding hole and is set to solid ground. Figure 1 , a first power supply interface 18, two second power supply interfaces 19, and a shell ground interface 21 are electrically connected to a corresponding chip capacitor 22 through gold wires, and the corresponding chip capacitor 22 is electrically connected to the voltage input terminal VD, the ground terminal VG, and the voltage input terminal VD of the frequency multiplier chip 13 through gold wires. At the same time, a corresponding second grounding hole 23 is set in a suitable area of the corresponding chip capacitor 22, and the chip capacitor 22 and the second grounding hole 23 are electrically connected using a conventional design, which is used for grounding filtering of the chip capacitor 22. Figure 3 The upper figure in the figure is the metal layer area on the front side of the dielectric substrate 14, and the lower figure is the metal layer area on the back side of the dielectric substrate 14. The second grounding hole 23 penetrates from the front side of the dielectric substrate 14 to the metal layer area on the back side of the dielectric substrate 14 to achieve grounding. It should be pointed out that the metal layer area on the front side of the dielectric substrate 14 needs to be printed with circuits according to the actual deployment of the W-band transmitting chip 12, the frequency multiplier chip 13, the chip capacitor 22, the second grounding hole 23, etc. to meet the realization of the overall function of the multi-chip packaging structure, and the circuit printing can adopt conventional means.
[0069] The multi-chip packaging structure of the W-band transmitting function in the utility model includes a plurality of chips with different functions (such as a W-band transmitting chip 12 and a frequency multiplier chip 13). According to the functions and indicators of each chip, and in combination with the system indicator requirements under most scene applications, the plurality of chips with different functions are combined into one. Combined with the standard coplanar waveguide probe on the same plate (i.e., the dielectric substrate 14), the traditional micro-assembly technology is used to maximize the small package volume and reduce the loss introduced by the additional. The same plate is synchronously equipped with a corresponding chip capacitor 22 for filtering, and finally all components are uniformly packaged in a plastic package shell 15. The multi-chip packaging structure of the W-band transmitting function can be used as a multi-chip module suitable for the terahertz band, so that the multi-chip module can convert low-frequency signals into terahertz wave band signals with a certain transmitting output power. In the multi-chip module, the coplanar waveguide probe is integrated with the AlN substrate on which the multi-chip is installed. This method can minimize the probe, integrate it, minimize the size and reduce the insertion loss. At the same time, multiple chips with different functions are integrated in this solution, and multiple chips are combined and assembled on the same substrate in the form of micro-assembly. At the same time, all chips with different functions and all chip capacitors 22 are within the bonding alignment area of the plastic package tube shell 15, so that the chip capacitors 22 can also be protected by the plastic package tube shell 15, and the three-proof function of the multi-chip module can be further improved. By integrating the probe chip, the multi-chip module can make the chip module as small as possible, which is convenient for downstream users to miniaturize subsequent products.
[0070] The above embodiments should not limit the present invention in any way, and any technical solutions obtained by equivalent replacement or equivalent conversion shall fall within the protection scope of the present invention.
Claims
1. A multi-chip package structure with W-band transmission function, characterized in that: Including waveguide probe, W-band transmitting chip, frequency multiplier chip, dielectric substrate, plastic package shell; The waveguide probe is integrated and arranged outside the edge of the dielectric substrate, and its input end is electrically connected to the radio frequency output end of the W-band transmitting chip; The W-band transmitting chip and the frequency multiplier chip are both arranged in the main body of the dielectric substrate; The LO input terminal of the W-band transmitting chip is electrically connected to the RF output terminal of the frequency multiplier chip; The radio frequency input end of the frequency multiplier chip is used to receive a radio frequency input signal; The W-band transmitting chip and the frequency multiplier chip arranged on the main body of the dielectric substrate are packaged in the plastic package shell.
2. The multi-chip package structure according to claim 1, characterized in that: The waveguide probe is integrally connected with the substrate of the dielectric substrate in the same plane.
3. The multi-chip package structure according to claim 1, characterized in that: The main body of the dielectric substrate is separately provided with sunken hollow areas; The W-band transmitting chip and the frequency multiplier chip are both arranged in the sunken hollow area.
4. The multi-chip package structure according to claim 3, characterized in that: The sunken hollow area is provided with a plurality of first grounding holes; The plurality of first grounding holes in the sunken hollow area are evenly distributed to form a grounding hole array.
5. The multi-chip package structure according to claim 4, characterized in that: The first grounding hole is a solid grounding setting.
6. The multi-chip package structure according to claim 1, characterized in that: The frequency multiplier chip is a double frequency chip.
7. The multi-chip package structure according to claim 1, characterized in that: The waveguide probe is a coplanar waveguide probe.
8. The multi-chip package structure according to claim 1, characterized in that: The interior of the plastic package tube shell is plated with a TaN absorption layer.
9. The multi-chip package structure according to claim 1, characterized in that: The edge of the main body of the dielectric substrate is also provided with a first power supply interface, a second power supply interface, a radio frequency input interface, and a tube shell ground interface; The voltage input terminal of the W-band transmitting chip is electrically connected to the first power supply interface, and the ground terminal thereof is electrically connected to the shell ground interface; The voltage input terminal of the frequency multiplier chip is electrically connected to the second power supply interface, and the RF input terminal of the frequency multiplier chip is electrically connected to the RF input interface.
10. The multi-chip package structure according to claim 9, characterized in that: The main body of the dielectric substrate is also provided with chip capacitors at the voltage input terminal, the ground terminal, and the voltage input terminal of the frequency multiplier chip close to the W-band transmitting chip; The voltage input terminal, the ground terminal, and the voltage input terminal of the W-band transmitting chip are electrically connected to the chip capacitors close to them respectively; A second grounding hole is arranged around the chip capacitor; The chip capacitor is electrically connected to the second grounding holes around it for grounding filtering.