Patents
Literature
Patsnap Eureka AI that helps you search prior art, draft patents, and assess FTO risks, powered by patent and scientific literature data.

2results about How to "Reduce capacitor size" patented technology

Lithium battery active equalization circuit with small volume, high efficiency and large current and control method thereof

The invention discloses a small-size high-efficiency large-current lithium battery active equalization circuit and a control method thereof, the small-size high-efficiency large-current lithium battery active equalization circuit comprises active equalization modules which are connected in parallel between two connected battery cells, and each active equalization module is composed of four switching tubes and a group of resonance branch circuit which is formed by connecting an inductor and a capacitor in series; n-1 active equalization modules are needed for a battery pack composed of N battery cells. The LC series branch serves as an energy temporary storage unit to replace a traditional inductance type single inductor or capacitance type multiple capacitors, the number of elements is reduced, meanwhile, low-loss energy transfer is achieved through resonance characteristics, and the equalization scheme has the advantages of being small in size, large in equalization current, small in equalization energy loss between battery cells, high in efficiency and the like.
Owner:HANGZHOU KUNMO TECHNOLOGY CO LTD

Semiconductor device and method for manufacturing semiconductor device

The invention discloses a semiconductor device and a manufacturing method of the semiconductor device, and relates to the technical field of semiconductors. The at least one first metal gate structure is arranged on the substrate, and the first metal gate structure is a PMOS (P-channel Metal Oxide Semiconductor)-like metal gate structure or an NMOS (N-channel Metal Oxide Semiconductor)-like metal gate structure; the metal structure is arranged on the substrate; the first metal gate structure is attached to the metal structure, and an insulating layer of the first metal gate structure is clamped between a metal gate of the first metal gate structure and the metal structure; and the metal gate of the first metal gate structure and the metal structure form a capacitor as a pair of opposite polar plates. Based on the above mode, the capacitor volume in the semiconductor structure can be reduced.
Owner:WUHAN XINXIN SEMICON MFG CO LTD