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2results about How to "Reduce pollution levels" patented technology

A soil LiTFSI-degrading bacterium and its application in environmental remediation.

ActiveCN121674306BImprove degradation efficiencyOptimization of degradation kinetic conditionsBacteriaWater contaminantsMicroorganismSoil science
This invention relates to the field of microbial technology, and particularly to a soil LiTFSI-degrading bacterium and its application in environmental remediation. The LiTFSI-degrading bacterium is *Pseudomonas nitroreductoides* (Nitroreducing Pseudomonas). Pseudomonas nitroreducens LiT2 or LiT3 were deposited on December 1, 2025, at the Guangdong Provincial Microbial Culture Collection Center, located at 5th Floor, Building 59, No. 100, Xianlie Middle Road, Guangzhou, China, with accession numbers GDMCC No: 67389 and GDMCC No: 67390, respectively. This soil LiTFSI-degrading bacterium can use LiTFSI as its sole carbon source and exhibits excellent degradation efficiency for LiTFSI. This invention also provides an environmental remediation agent that can precisely and rapidly intervene in and enhance the degradation process of LiTFSI in soil, thereby significantly reducing the pollution levels of LiTFSI and its intermediate metabolites TFNH2 and TFOH.
Owner:GUANGDONG PHARMA UNIV +1

Ion implantation method

ActiveCN117276058BImprove yieldReduce pollution levels
This application provides an ion implantation method that uses an ion implanter to implant arsenic ions into a wafer to reduce the metal contamination content of the wafer. The method includes: generating an arsenic ion beam using the ion source of the ion implanter, the arsenic ion beam comprising multiple dopant ions with different mass-to-charge ratios, the dopant ions having different trajectories in a magnetic field; using a quality analyzer of the ion implanter to screen dopant ions that meet a standard based on their mass-to-charge ratio, the standard dopant ions including at least arsenic ions with a +2 valence; and implanting the standard dopant ions into the wafer using the implantation system of the ion implanter, wherein the implanted content of the +2 valence arsenic ions accounts for more than 99% of the total implanted dopant ions. This ion implantation method can reduce the metal contamination content during ion implantation.
Owner:SEMICON MFG INT (BEIJING) CORP +1

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