4results about How to "Reduce pollution levels" patented technology

The invention discloses a system for optimizing a vehicle path. The system comprises a client, a vehicle-mounted GPS, a mobile internet device, a satellite, a dispatching server, a dispatching computer, a map server and a screening computer. According to the processing method and system for vehicle path optimization, multiple paths generated by a Baidu map, a Tencent map, an Gade map and the like in a map server can be sorted and transmitted to a screening computer, the optimal path is screened out and sent to a navigation terminal of the vehicle, the transportation efficiency can be greatly improved, and the transportation cost is reduced. The method has the advantages that the driving cost is reduced, the vehicle empty driving range is reduced, the freight volume is increased, the operation income is increased, the exhaust emission is reduced, the urban air pollution level is reduced, the traffic accident rate is reduced, a user does not need to find an optimal path in map software such as a Baidu map, a Tencent map and an Gade map, and the method is simple and easy to use.

This invention relates to the field of microbial technology, and particularly to a soil LiTFSI-degrading bacterium and its application in environmental remediation. The LiTFSI-degrading bacterium is *Pseudomonas nitroreductoides* (Nitroreducing Pseudomonas). Pseudomonas nitroreducens LiT2 or LiT3 were deposited on December 1, 2025, at the Guangdong Provincial Microbial Culture Collection Center, located at 5th Floor, Building 59, No. 100, Xianlie Middle Road, Guangzhou, China, with accession numbers GDMCC No: 67389 and GDMCC No: 67390, respectively. This soil LiTFSI-degrading bacterium can use LiTFSI as its sole carbon source and exhibits excellent degradation efficiency for LiTFSI. This invention also provides an environmental remediation agent that can precisely and rapidly intervene in and enhance the degradation process of LiTFSI in soil, thereby significantly reducing the pollution levels of LiTFSI and its intermediate metabolites TFNH2 and TFOH.

The invention provides a sewage draining exit layout optimization method based on Fluent fluid simulation. The sewage draining exit layout optimization method comprises the following steps: S1, setting an optimization target; s2, a single drain outlet is formed in the center of the bottom of the culture pond and serves as a starting point of layout optimization; s3, evaluating whether the initial layout reaches a set optimization target or not; and S4, by taking the initial sewage draining exit as a circle center, adding sewage draining exits with the same specification one by one in the circumferential direction of the initial sewage draining exit, keeping all the sewage draining exits in the circumferential direction to be distributed at equal intervals, judging whether the new layout reaches a set optimization target or not according to a simulation result, and ending optimization until the sewage draining exit layout which can reach the set optimization target is found. By optimizing the layout and design of the drain outlets, the purpose of rapidly and efficiently discharging pollutants in the culture pond with the minimum number of drain outlets is achieved, the cost effectiveness and the stability of the pond body structure and the culture environment are guaranteed, and green and healthy development of the aquaculture industry is promoted.

This application provides an ion implantation method that uses an ion implanter to implant arsenic ions into a wafer to reduce the metal contamination content of the wafer. The method includes: generating an arsenic ion beam using the ion source of the ion implanter, the arsenic ion beam comprising multiple dopant ions with different mass-to-charge ratios, the dopant ions having different trajectories in a magnetic field; using a quality analyzer of the ion implanter to screen dopant ions that meet a standard based on their mass-to-charge ratio, the standard dopant ions including at least arsenic ions with a +2 valence; and implanting the standard dopant ions into the wafer using the implantation system of the ion implanter, wherein the implanted content of the +2 valence arsenic ions accounts for more than 99% of the total implanted dopant ions. This ion implantation method can reduce the metal contamination content during ion implantation.