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Image sensor with high fill factor pixels and method for forming an image sensor

A technology of image sensor and active area, which is applied in the fields of electrical solid-state devices, semiconductor devices, semiconductor/solid-state device manufacturing, etc., and can solve problems such as reducing image quality

Active Publication Date: 2007-09-19
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, misalignment between microlenses and pixel arrays occurs, degrading image quality

Method used

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  • Image sensor with high fill factor pixels and method for forming an image sensor
  • Image sensor with high fill factor pixels and method for forming an image sensor
  • Image sensor with high fill factor pixels and method for forming an image sensor

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Embodiment Construction

[0088] The invention will now be described more particularly with reference to the accompanying drawings, in which preferred embodiments of the invention are shown. However, this invention may be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Like reference numerals refer to like elements throughout the specification.

[0089] The invention will now be described in more detail with reference to the accompanying drawings, in which preferred embodiments of the invention are illustrated. However, this invention may be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Throughout the specification, the same reference numerals refer to the same elements.

[0090] FIG. 1 is a block diagram of a CIS image sensor according to an embodiment of the present invention. Referring to FIG. 1 , a CIS image sensor 100 includes an active pixel sensor array (APS) 10, a timing generato...

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Abstract

An image sensor comprises: an array of photoelectric conversion elements in a substrate, the photoelectric conversion elements being arranged in rows and columns extending in a first direction and a second direction respectively; a plurality of first junction isolation regions in the substrate that each isolate side portions of neighboring photoelectric conversion elements of a common row, and a plurality of second junction isolation regions in the substrate that each isolate side portions of neighboring photoelectric conversion elements of a common column; and a plurality of dielectric isolation regions in the substrate, that each isolate corner portions of neighboring photoelectric conversion elements. In one embodiment, the photoelectric conversion elements have a first pitch in the first direction and have a second pitch in the second direction and the first pitch is substantially equal for the photoelectric conversion elements of a common row, and the second pitch is substantially equal for the photoelectric conversion elements of a common column.

Description

[0001] related application [0002] This application is a continuation of U.S. Patent Application No. 11 / 482,172, filed July 7, 2006, and a continuation of U.S. Patent Application No. 11 / 481,733, filed July 7, 2006, which are incorporated herein in their entirety The contents are incorporated by reference. This application claims priority under 35 U.S.C. 119 to Korean Patent Application No. 10-2006-0022726 filed March 10, 2006, the entire contents of which are hereby incorporated by reference. technical field [0003] Semiconductor image sensing devices are widely used to capture images in a variety of applications such as digital still cameras, video cameras, printers, scanners, and the like. Such devices include an image sensor that captures optical information and converts the optical information into an electrical signal that is then processed, stored, or otherwise processed to cause the captured image to be projected onto a display or print medium . Background techniq...

Claims

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Application Information

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IPC IPC(8): H01L27/146H01L21/82
CPCH01L27/14603H01L27/14607H01L27/1461H01L27/1463H01L27/14641H01L27/14689
Inventor 李锡河李德炯慎宗哲李康福
Owner SAMSUNG ELECTRONICS CO LTD
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