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Programming method and device of NAND type flash memory and reading method

A technology of flash memory and programming method, applied in the field of programming and device and reading of NAND gate flash memory, can solve the problems of slow data programming speed, increase the number of data reading times, etc., to speed up data programming speed , the effect of reducing data programming time

Inactive Publication Date: 2009-03-11
NOVATEK MICROELECTRONICS CORP
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this way, not only will the overall data programming speed of the NAND-type flash memory become quite slow, but also increase the number of times that the overall data of the NAND-type flash memory is read.

Method used

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  • Programming method and device of NAND type flash memory and reading method
  • Programming method and device of NAND type flash memory and reading method
  • Programming method and device of NAND type flash memory and reading method

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Embodiment Construction

[0047] The spirit to be explained in the present invention is to shorten the time for data programming of each page in the NAND flash memory on the one hand, and then to accelerate the overall data programming speed of the NAND flash memory; on the other hand, to reduce The number of data reads for each page in the NAND flash memory can improve the reliability of reading data stored in each page of the NAND flash memory. The following content will provide a detailed description of the technical features and desired effects of this case, so as to provide reference for those skilled in the art related to the invention.

[0048] Generally speaking, the NAND flash memory is mainly composed of multiple blocks, and each block is divided into multiple pages with the same storage capacity, and each page has n data storage areas and its The n free areas corresponding to each. Wherein, the end address of the i-th data storage area continues the start address of the (i+1)th data storage...

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Abstract

The invention relates to a programming method, a device and a reading method of a flash memory of an NAND gate type. Under the condition that data quantity in once programming does not occupy the storage capacity of all data storage areas in a page, the programming method and the device which are provided by the invention can shorten the data programming time of the page so as to further increase the whole data programming speed of the flash memory of an NAND gate type. In addition, under the condition that data quantity in once reading does not occupy the storage capacity of all the data storage areas in the page, the reading method of the flash memory of an NAND gate type, which is provided by the invention, can decrease the data reading number of the page so as to further decrease the whole reading number of the flash memory of an NAND gate type.

Description

technical field [0001] The present invention relates to a programming and reading method of a NAND flash memory, and in particular to a programming method and device that can speed up the overall data programming speed of a NAND flash memory, and can reduce NAND The reading method of the total data reading count of the gate flash memory. Background technique [0002] Generally speaking, NAND flash memory (NAND flash memory) is mainly composed of multiple blocks (Block), and each block is divided into multiple pages (Page) with the same storage capacity, and each A page has multiple data storage areas and their corresponding spare areas. Taking the paging size specification of 2Kbytes+64bytes / page as an example, there are four data storage areas with a storage capacity of 512bytes and the corresponding four free areas with a storage capacity of 16bytes, and the paging size specification is Taking 4Kbytes+128bytes / page as an example, there are eight data storage areas with a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/10
Inventor 张龙豪李宗源王顺平杨祯泓
Owner NOVATEK MICROELECTRONICS CORP
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