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Self-assembled monolayers for patterned formation

A self-assembled single-layer, patterned sacrificial layer technology, used in electrical components, semiconductor/solid-state device manufacturing, circuits, etc.

Active Publication Date: 2018-06-08
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, as always, some existing fabrication techniques cannot be used with sufficient precision in the fabrication of next-generation integrated circuit devices, as device sizes get smaller from one generation to the next.

Method used

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  • Self-assembled monolayers for patterned formation
  • Self-assembled monolayers for patterned formation
  • Self-assembled monolayers for patterned formation

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Embodiment Construction

[0028] Here, the description is made with reference to the drawings, wherein like reference numerals are generally used to refer to like elements throughout, and wherein the various structures are not necessarily drawn to scale. In the following description, for purposes of explanation, numerous specific details are set forth to facilitate understanding. It will be apparent, however, to one of ordinary skill in the art that one or more aspects described herein may be practiced with a lesser degree of these specific details. In other instances, well-known structures and devices are shown in diagrammatic form to facilitate understanding.

[0029] Components such as wires are typically formed using a process in which a pattern defining the component is first formed in a temporary layer above a semiconductor substrate and then transferred to the substrate using conventional etch chemistries. Typically, photolithography is used to pattern such features in a photodefinable (or phot...

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Abstract

The present disclosure relates to patterned self-assembled monolayers, and more particularly to a process for fabricating semiconductor devices. In some embodiments, a semiconductor device includes a patterned surface. Patterns can be formed from self-assembled monolayers. The disclosed process provides self-assembled monolayers that can be deposited rapidly, thus increasing production throughput and reducing cost, as well as providing patterns that are generally uniform in shape.

Description

technical field [0001] The present invention relates to the field of semiconductors, and more particularly, to self-assembled monolayers for patterned formation. Background technique [0002] The continuing trend in semiconductor technology is to build integrated circuits with more and / or faster semiconductor devices. However, as always, some existing fabrication techniques cannot be used with sufficient precision in fabricating the next generation of integrated circuit devices, as device sizes shrink from generation to generation. For example, spacers are used in conventional semiconductor devices to provide alignment of source and drain regions with gates in transistors. Subtle differences in the uniformity and shape of the spacers are sufficient to alter the operational characteristics of the device. Contents of the invention [0003] In order to solve the above problems, the present invention provides a method for manufacturing a semiconductor device, comprising: pro...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02
CPCH01L21/0332H01L21/0337H01L21/0338H01L21/31144H01L21/76816
Inventor 黄琮闵李忠儒黄建桦
Owner TAIWAN SEMICON MFG CO LTD
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