Unlock instant, AI-driven research and patent intelligence for your innovation.

Sidewall image transfer process with multiple critical dimensions

A technology for image transfer and removal, used in electrical components, circuits, semiconductor/solid-state device manufacturing, etc.

Active Publication Date: 2014-06-04
GLOBALFOUNDRIES INC
View PDF4 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this process generally produces only one type of space with the same width measured along the substrate surface, resulting in only a critical dimension of the device pattern being transferred below the substrate

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Sidewall image transfer process with multiple critical dimensions
  • Sidewall image transfer process with multiple critical dimensions
  • Sidewall image transfer process with multiple critical dimensions

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] In the following detailed description, numerous details are set forth in order to provide a thorough understanding of various embodiments of the invention. However, it is understood that embodiments of the invention may be practiced without these details.

[0023] In order not to obscure the essence of the present invention and / or the description of the embodiments, in the following detailed description, some process steps and / or operations known in the art may be combined for the purpose of illustration and / or illustration and in some cases The following may not be described in detail. In other instances, some process steps and / or operations known in the art may not be described at all. Additionally, some well-known device process technologies may not be described in detail, and in some cases, other published articles, patents, and / or patent applications may be cited by reference so as not to obscure the essence and / or embodiments of the present invention. describe. ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Embodiment of the present invention provides a method of forming a semiconductor device in a sidewall image transfer process with multiple critical dimensions. The method includes forming a multi-level dielectric layer over a plurality of mandrels, the multi-level dielectric layer having a plurality of regions covering the plurality of mandrels, the plurality of regions of the multi-level dielectric layer having different thicknesses; etching the plurality of regions of the multi-level dielectric layer into spacers by applying a directional etching process, the spacers being formed next to sidewalls of the plurality of mandrels and having different widths corresponding to the different thicknesses of the plurality of regions of the multi-level dielectric layer; removing the plurality of mandrels in- between the spacers; and transferring bottom images of the spacers into one or more layers underneath the spacers.

Description

[0001] Cross References to Related Applications [0002] This application claims priority to US Patent Application S / N: 13 / 267,198, filed October 6, 2011, entitled "Sidewall Image Transfer Process with Multiple Critical Dimensions," which is hereby incorporated by reference in its entirety. technical field [0003] The present invention relates to the field of semiconductor device fabrication. In particular, it relates to an improved sidewall image transfer process suitable for forming multiple critical dimensions of semiconductor devices. Background technique [0004] Semiconductor device fabrication includes various steps in the device patterning process. For example, the fabrication of semiconductor chips may start with eg multiple CAD (Computer Aided Design) generated device patterns followed by efforts to replicate these device patterns in a substrate. The replication process may involve exposure techniques, and the use of various subtractive (etching) and / or additive...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/027
CPCH01L21/0338H01L21/0337H01L21/311H01L21/82
Inventor S·拉古纳塔安S·卡纳卡萨巴帕特伊R·O·尤恩格A·H·加伯尔S·D·伯恩斯E·C·迈克莱拉恩
Owner GLOBALFOUNDRIES INC