Data writing method and device based on flash memory

A data writing and data technology, applied in the computer field, can solve problems such as write amplification

Active Publication Date: 2019-11-26
TENCENT TECH (SHENZHEN) CO LTD
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Based on this, it is necessary to address the problem of write amplification in Nand-type flash memory, and provide a method and device for writing data based on flash memory

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Data writing method and device based on flash memory
  • Data writing method and device based on flash memory
  • Data writing method and device based on flash memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] In order to make the objectives, technical solutions and advantages of the present invention clearer, the following further describes the present invention in detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention, but not to limit the present invention.

[0026] Unless otherwise specifically and clearly described in the context, the number of elements and components in the present invention may exist in a single form or in multiple forms, and the present invention does not limit this. Although the steps in the present invention are arranged with labels, they are not used to limit the order of the steps. Unless the order of the steps is clearly stated or the execution of a step requires other steps as a basis, the relative order of the steps can be adjusted. It can be understood that the term "and / or" as used herein refers to and encompasses an...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a data writing method based on a flash memory, wherein the method comprises the steps as follows: receiving original data writing requests; aggregating a plurality of original data writing requests according to data size of data to be written corresponding to the original data writing requests so that the total amount of the data size of the data to be written corresponding to aggregated data writing requests is matched with positive integer multiples of block size; determining leisure physical blocks whose number is corresponded to the multiple of the matched block size in the flash memory according to the aggregated data writing requests, and writing the data to be written corresponding to the aggregated data writing requests in the determined leisure physical blocks. The data writing method based on the flash memory of the invention ensures the consistency of write-in and erasure because the write-in and erasure of data are carried out by using block as a unit so as to effectively solve the problem of write amplification. The invention further provides a data writing device based on the flash memory.

Description

Technical field [0001] The present invention relates to the field of computer technology, and in particular to a flash-based data writing method and device. Background technique [0002] Flash memory is a widely used storage medium. Among them, Nand Flash (Nand type flash memory, a kind of non-volatile flash memory) is a new type of flash memory. Solid-state hard drives and memory cards made of Nand type flash memory have fast read and write speeds. The advantages of vibration are widely used in military, vehicle, industrial control, video surveillance, electricity, medical, Internet and other fields. [0003] The basic structure of Nand flash memory includes several blocks, and each block includes several pages. The block size is larger than the page size. Taking the current typical Nand flash memory as an example, the block size is generally 2M bytes, and the page size is generally 8K bytes. [0004] Nand-type flash memory can be repeatedly written, but the erasing operation must...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): G06F3/06G06F12/02
Inventor 高剑林王银虎吴高峰
Owner TENCENT TECH (SHENZHEN) CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products