Lower electrode assembly and semiconductor processing apparatus

Abstract

The present invention provides a lower electrode assembly and a semiconductor processing apparatus. The lower electrode assembly includes a lower electrode plate, an insulating dielectric layer and a metal base which are arranged sequentially from top to bottom; an insulating plug which passes through the insulating dielectric layer along the thickness direction of the insulating dielectric layer is arranged in the insulating dielectric layer; the insulating plug has a gas channel; the gas outgoing end and gas incoming end of the gas channel are located at the upper end surface and lower end surface of the insulating plug respectively; a heat exchange gas is introduced into the gas channel, so that temperature control on the lower electrode plate is realized; and the gas channel is a non-linear channel. According to the lower electrode assembly of the present invention, the transfer distance of the heat exchange gas can be prolonged under the same pressure, a condition that the flowing direction of the heat exchange gas in the non-linear channel is consistent with an electric field direction can be avoided, and therefore, the ignition risk of the heat exchange gas can be decreased.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a lower electrode assembly and semiconductor processing equipment. Background technique [0002] In the reaction chamber of the current plasma etching equipment, the lower electrode assembly is an extremely important assembly as the radio frequency electrode and the carrier for carrying the wafer. During the process, since the temperature of the wafer will gradually increase, when the temperature exceeds a certain threshold, it will inevitably affect the process results. For this reason, the cooling gas is delivered to the lower electrode plate in the lower electrode assembly by using the gas delivery pipeline , the lower electrode plate can be cooled, thereby indirectly controlling the temperature of the wafer placed on the lower electrode plate. [0003] During the process, it is usually necessary to apply RF bias to the lower electrode plate, and the gas delivery pi...

AI Technical Summary

Problems solved by technology

It can be seen that, since the above-mentioned insulating plug 3 uses the vertically arranged through-hole 31 to transport the cooling gas, this makes the flow direction of the cooling gas (the axial direction of the through-hole 31) parallel to the direction of the electric field (vertically downward) during the process. , while the straight-through hole 31 vertically arranged has a short distance to transport the cooling gas, so it is easy to cause sparking

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