Supercharge Your Innovation With Domain-Expert AI Agents!

Polishing composition and polishing method using same

A composition and compound technology, applied in polishing compositions containing abrasives, grinding machine tools, grinding devices, etc., can solve problems such as residual height difference

Active Publication Date: 2020-04-21
FUJIMI INCORPORATED
View PDF10 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, materials such as polysilicon and silicon oxide, which are relatively soft and easily react with abrasives, have a phenomenon of dishing, which is excessively cut compared with the surrounding silicon nitride, etc., and there is a problem of residual height difference.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Polishing composition and polishing method using same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1～13、 comparative example 1～7

[0082] Abrasive grains (colloidal silica shown in Table 1) and a polyoxyalkylene-containing compound were added to water as a solvent at the concentrations shown in Table 1, and the additives listed in Table 1 were added at the concentrations shown in Table 1. The compound shown was stirred and mixed to obtain a polishing composition (mixing temperature: about 25° C., mixing time: about 10 minutes). In addition, the pH of the polishing composition was adjusted with Additive 1 shown in Table 1, and checked with a pH meter.

[0083] Here, the polishing conditions and objects to be polished are as follows.

[0084] (grinding condition)

[0085] Grinder: CMP single-side grinder for 200mm wafers

[0086] Pad: polyurethane pad

[0087] Pressure: 3psi (about 20.7kPa)

[0088] Plate speed: 90rpm

[0089] Flow rate of grinding composition: 130ml / min

[0090] Grinding time: 1 minute

[0091] Object to be polished: 200mm wafer (Poly-Si, SiN, TEOS)

[0092] Poly-Si: Manufactured b...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle sizeaaaaaaaaaa
particle sizeaaaaaaaaaa
particle diameteraaaaaaaaaa
Login to View More

Abstract

The present invention provides a polishing composition capable of sufficiently suppressing dishing in a polishing step and more reliably eliminating height differences. The present invention is a polishing composition comprising silica having an organic acid immobilized on its surface and a polyoxyalkylene-containing compound obtained by gel permeation chromatography (GPC). The molecular weight distribution of the weight average molecular weight (in terms of polyethylene glycol) has two or more peaks, and the pH of the polishing composition is 7 or less.

Description

technical field [0001] The present invention relates to a polishing composition used in a semiconductor device manufacturing process and a polishing method using the same. Background technique [0002] In semiconductor device manufacturing processes, as the performance of semiconductor devices improves, a technique for manufacturing wiring at a higher density and with higher integration is required. In the manufacturing process of such a semiconductor device, CMP (Chemical Mechanical Polishing: Chemical Mechanical Polishing) becomes an essential process. With the advancement of miniaturization of semiconductor circuits, the flatness required for the unevenness of the patterned wafer has become higher, and it is desired to achieve high flatness in the nanometer order by CMP. In order to achieve high smoothness by CMP, it is preferable to polish the convex portions of the pattern wafer at a high polishing rate, while substantially not polishing the concave portions on the oth...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C09K3/14B24B37/00C09G1/02H01L21/304
CPCH01L21/304C09G1/02C09K3/1409B24B37/00
Inventor 吉崎幸信
Owner FUJIMI INCORPORATED
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com