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Polishing composition and polishing method using same

A technology of composition and compound, applied in the direction of polishing composition containing abrasive, grinding device, grinding machine tool, etc., can solve the problem of residual height difference and so on

Active Publication Date: 2017-08-18
FUJIMI INCORPORATED
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, materials such as polysilicon and silicon oxide, which are relatively soft and easily react with abrasives, have a phenomenon of dishing, which is excessively cut compared with the surrounding silicon nitride, etc., and there is a problem of residual height difference.

Method used

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  • Polishing composition and polishing method using same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1～13、 comparative example 1～7

[0082] Abrasive grains (colloidal silica shown in Table 1) and a polyoxyalkylene-containing compound were added to water as a solvent at the concentrations shown in Table 1, and the additives listed in Table 1 were added at the concentrations shown in Table 1. The compound shown was stirred and mixed to obtain a polishing composition (mixing temperature: about 25° C., mixing time: about 10 minutes). In addition, the pH of the polishing composition was adjusted with Additive 1 shown in Table 1, and checked with a pH meter.

[0083] Here, the polishing conditions and objects to be polished are as follows.

[0084] (grinding condition)

[0085] Grinder: CMP single-side grinder for 200mm wafers

[0086] Pad: polyurethane pad

[0087] Pressure: 3psi (about 20.7kPa)

[0088] Plate speed: 90rpm

[0089] Flow rate of grinding composition: 130ml / min

[0090] Grinding time: 1 minute

[0091] Object to be polished: 200mm wafer (Poly-Si, SiN, TEOS)

[0092] Poly-Si: Manufactured b...

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Abstract

The present invention provides a polishing composition capable of adequately limiting dishing phenomena in polishing steps and of more reliably eliminating level differences. The present invention is a polishing composition: which contains silica on the surface of which an organic acid has been fixed and a polyoxyalkylene group-containing compound; for which the molecular weight distribution of the weight average molecular weight (calculated as polyethylene glycol) of the polyoxyalkylene group-containing compound by gel permeation chromatography (GPC) has at least two peaks; and for which the pH is not more than 7.

Description

technical field [0001] The present invention relates to a polishing composition used in a semiconductor device manufacturing process and a polishing method using the same. Background technique [0002] In semiconductor device manufacturing processes, as the performance of semiconductor devices improves, a technique for manufacturing wiring at a higher density and with higher integration is required. In the manufacturing process of such a semiconductor device, CMP (Chemical Mechanical Polishing: Chemical Mechanical Polishing) becomes an essential process. With the advancement of miniaturization of semiconductor circuits, the flatness required for the unevenness of the patterned wafer has become higher, and it is desired to achieve high flatness in the nanometer order by CMP. In order to achieve high smoothness by CMP, it is preferable to polish the convex portions of the pattern wafer at a high polishing rate, while substantially not polishing the concave portions on the oth...

Claims

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Application Information

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IPC IPC(8): C09K3/14B24B37/00C09G1/02H01L21/304
CPCH01L21/304C09G1/02C09K3/1409B24B37/00
Inventor 吉崎幸信
Owner FUJIMI INCORPORATED
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