A kind of thin film and its preparation method and quantum dot light-emitting diode

A quantum dot light-emitting and diode technology, which is applied in the manufacture of semiconductor/solid-state devices, organic semiconductor devices, electric solid-state devices, etc., can solve the problems of low electron mobility of metal oxides, poor luminous efficiency of quantum dot light-emitting diodes, etc. Electron transfer efficiency, increase capability, promote effective effect

Active Publication Date: 2021-08-10
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a composite material and its preparation method, a quantum dot light-emitting diode and its preparation method, aiming at solving the problem that the electron mobility of the existing metal oxide is low, resulting in the above-mentioned The problem of poor luminous efficiency of quantum dot light-emitting diodes with metal oxides as electron transport layers

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  • A kind of thin film and its preparation method and quantum dot light-emitting diode
  • A kind of thin film and its preparation method and quantum dot light-emitting diode
  • A kind of thin film and its preparation method and quantum dot light-emitting diode

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Embodiment 1

[0065] A quantum dot light-emitting diode, which includes an ITO substrate, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer and a cathode stacked from bottom to top, wherein the electron transport layer material is made of yttrium acetylacetonate and oxide Composite materials formed by coordination and bonding of titanium. The preparation method of the quantum dot light-emitting diode comprises the steps of:

[0066] 1) Preparation of yttrium acetylacetonate: put an appropriate amount of yttrium oxide in a small beaker, first add a small amount of distilled water, slowly add dilute sulfuric acid dropwise under magnetic stirring, until the white powder gradually dissolves into a colorless solution, add 6 ml acetylacetone After forming an oil-water two-phase (molar ratio, acetylacetone: Y 3+ =3:1), then add a small amount of ethanol, and the reaction solution is homogeneously dispersed; slowly add a pre-configured 1 M NaOH solution dropwi...

Embodiment 2

[0075] A quantum dot light-emitting diode, which includes an ITO substrate, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer and a cathode stacked from bottom to top, wherein the electron transport layer material is made of yttrium acetylacetonate and oxide Composite materials formed by coordination and bonding of titanium. The preparation method of the quantum dot light-emitting diode comprises the steps of:

[0076] 1) Preparation of yttrium acetylacetonate: put an appropriate amount of yttrium oxide in a small beaker, first add a small amount of distilled water, slowly add dilute nitric acid dropwise under magnetic stirring, until the white powder gradually dissolves into a colorless solution, add 6 ml of acetylacetone After forming an oil-water two-phase (molar ratio, acetylacetone: Y 3+ =3:1), then add a small amount of ethanol, and the reaction solution is dispersed in a homogeneous phase; slowly add a pre-configured 1 M KOH soluti...

Embodiment 3

[0085] A quantum dot light-emitting diode, which includes an ITO substrate, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer and a cathode stacked from bottom to top, wherein the electron transport layer material is made of yttrium acetylacetonate and oxide Composite materials formed by coordination and bonding of titanium. The preparation method of the quantum dot light-emitting diode comprises the steps of:

[0086] 1) Preparation of yttrium acetylacetonate: put an appropriate amount of yttrium oxide in a small beaker, first add a small amount of distilled water, slowly add dilute hydrochloric acid dropwise under magnetic stirring, until the white powder gradually dissolves into a colorless solution, add 6 ml acetylacetone After forming an oil-water two-phase (molar ratio, acetylacetone: Y 3+ =3:1), then add a small amount of methanol, and the reaction solution is dispersed in a homogeneous phase; slowly add a pre-configured 1 M LiOH s...

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Abstract

The invention discloses a composite material and a preparation method thereof, a quantum dot light-emitting diode and a preparation method thereof, wherein the composite material includes titanium oxide and yttrium acetylacetonate coordinately bound on the surface of the titanium oxide. In the present invention, the surface modification of titanium oxide is carried out by selecting yttrium acetylacetonate with conjugated properties, so that yttrium acetylacetonate is coordinated and bonded on the surface of the titanium oxide to obtain the composite material with high electron mobility; when the composite When the material is used as the electron transport layer of quantum dot light-emitting diodes, it can not only improve the electron transport efficiency of the electron transport layer, but also improve the ability of electron injection into the quantum dot light-emitting layer, promote the effective recombination of electron-holes, and reduce the impact of exciton accumulation on quantum The performance of quantum dot light-emitting diodes is affected, thereby improving the luminous efficiency of quantum dot light-emitting diodes.

Description

technical field [0001] The invention relates to the field of quantum dot light-emitting diodes, in particular to a thin film, a preparation method thereof and a quantum dot light-emitting diode. Background technique [0002] TiO 2 It is a widely used multifunctional material with a wide bandgap of 3.2 eV. It has unique optical, electrical and physical properties, as well as excellent chemical stability and can resist electrochemical corrosion of the medium. It has been widely used in coatings , cosmetics, semiconductors, sensors, dielectric materials, catalysts and other fields. TiO 2 It is an important wide bandgap indirect bandgap semiconductor material, and is widely used as a functional material for photochemical and optoelectronic devices such as solar cells. [0003] On the other hand, titanium oxide (TiO 2 ), as a cheaper and more stable metal oxide, is also widely used in the fields of electrode materials, gas-sensitive materials and supercapacitors, and can also...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K85/30H10K50/115H10K50/165H10K2102/101H10K71/00
Inventor何斯纳吴龙佳吴劲衡
OwnerTCL CORPORATION