Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Three-dimensional memory device

A three-dimensional storage and device technology, applied in semiconductor devices, electrical solid state devices, electrical components, etc., can solve problems affecting the stability of phase change memory, thermal crosstalk, etc.

Active Publication Date: 2021-05-11
YANGTZE ADVANCED MEMORY INDUSTRIAL INNOVATION CENTER CO LTD
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The cell structure of this structure, because the distance between two adjacent memory cells is relatively close, it is easy to generate thermal crosstalk between each other, which affects the stability of the phase change memory

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Three-dimensional memory device
  • Three-dimensional memory device
  • Three-dimensional memory device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments. In particular, the following examples are only used to illustrate the present invention, but not to limit the scope of the present invention. Likewise, the following embodiments are only some of the embodiments of the present invention but not all of them. All other embodiments obtained by those skilled in the art without creative efforts all fall within the protection scope of the present invention.

[0029] It should be easily understood that the directional terms mentioned in the present invention, such as [upper], [lower], [front], [back], [left], [right], [inner], [outer], etc., only is the direction with reference to the attached drawings. Therefore, the directional terms used are used to illustrate and understand the present invention, but not to limit the present invention. In the figures, structurally similar elements are denoted by t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a three-dimensional memory device. The three-dimensional memory device comprises a first signal address line layer extending along a first direction; a plurality of storage units which are stacked on the first signal address line layer along a third direction and are arranged at intervals, wherein each storage unit comprises a selection layer and a phase change storage layer which are stacked along the third direction, and the phase change storage layers of the adjacent storage units are not in the same layer; and a second signal address line layer which is overlapped on the storage unit along the third direction, and extends along a second direction, wherein the first direction, the second direction and the third direction are perpendicular to one another. The thermal crosstalk phenomenon can be effectively improved, and the performance stability and the storage density of the three-dimensional memory device are improved.

Description

【Technical field】 [0001] The invention relates to the technical field of semiconductors, in particular to a three-dimensional storage device. 【Background technique】 [0002] Phase change memory, referred to as PCM (phase change memory), phase change memory is to store data by using the difference in conductivity of phase change materials when they transform between crystalline and amorphous states, especially based on electrothermal methods. The phase change material is heated and quenched to take advantage of the difference between the resistivities of the amorphous and crystalline phases in the phase change material. [0003] Currently, the three-dimensional memory architecture is widely used because it can solve the density limitation in planar memory cells. In the cell structure of three-dimensional PCM (such as the upper cell structure or the lower cell structure), it includes storage cells and selection cells connected in series in the vertical direction, the storage ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L45/00H01L27/24
CPCH10B63/84H10N70/231
Inventor 刘峻
Owner YANGTZE ADVANCED MEMORY INDUSTRIAL INNOVATION CENTER CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com