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CMOS power amplifier and electronic equipment

A power amplifier and voltage technology, applied in the layout of power amplifiers, amplifiers, amplifier protection circuits, etc., can solve the problems of peak voltage breakdown and damage of CMOS power amplifiers, and achieve the effect of uniform voltage and improved reliability.

Pending Publication Date: 2021-09-03
RDA MICROELECTRONICS BEIJING
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  • Description
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Problems solved by technology

[0004] The embodiment of the present application provides a CMOS power amplifier and electronic equipment, which can solve the technical problem that the CMOS power amplifier in the prior art is easily damaged by excessive peak voltage breakdown under the condition of oscillation or load mismatch

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Embodiment Construction

[0023] In order to make the purposes, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments It is a part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application. In addition, although the disclosures in this application are introduced as exemplary one or several examples, it should be understood that each aspect of these disclosures can also independently constitute a complete implementation.

[0024] It should be noted that the brief description of the terms in this application is only for the convenience of un...

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Abstract

The embodiment of the invention provides a CMOS (Complementary Metal Oxide Semiconductor) power amplifier and electronic equipment. The CMOS power amplifier comprises a first CMOS tube, a second CMOS tube and a feedback adjustment circuit; the grid electrode of the first CMOS tube is connected with the input end of the CMOS power amplifier, the drain electrode of the first CMOS tube is connected with the source electrode of the second CMOS tube, the drain electrode of the second CMOS tube is connected with the output end of the CMOS power amplifier, the first end of the feedback adjustment circuit is connected with the output end of the CMOS power amplifier, and the second end of the feedback adjustment circuit is connected with the grid electrode of the second CMOS tube; when the voltage of the output end of the CMOS power amplifier is greater than the break-over voltage corresponding to the feedback adjustment circuit, the feedback adjustment circuit is conducted, so that the problem that the CMOS power amplifier is broken down by over-high peak voltage to be damaged can be prevented under the condition of oscillation or load mismatch, and the reliability of the CMOS power amplifier is improved.

Description

technical field [0001] The embodiments of the present application relate to the technical field of electronic circuits, and in particular to a complementary metal oxide semiconductor (Complementary Metal Oxide Semiconductor, CMOS for short) power amplifier and electronic equipment. Background technique [0002] At present, power amplifiers (Power Amplifier, referred to as PA) are mainly made of gallium arsenide (GaAs) technology or CMOS technology. Compared with GaAs technology, power amplifiers made of CMOS technology have low cost, high process maturity and Good integration and other advantages. [0003] However, due to the low breakdown voltage of the CMOS power amplifier, the CMOS power amplifier is easily broken down by an excessively high peak voltage in the case of oscillation or load mismatch. Contents of the invention [0004] The embodiment of the present application provides a CMOS power amplifier and electronic equipment, which can solve the technical problem ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/52H03F3/21
CPCH03F1/523H03F3/21
Inventor 陈永聪孙亚楠梁聪
Owner RDA MICROELECTRONICS BEIJING
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