A kind of igbt device and its manufacturing method
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A technology of device and conductivity type, which is applied in the field of power semiconductor devices, can solve problems such as dynamic avalanche of devices, achieve the effects of reducing turn-off loss, suppressing impact ionization, and improving turn-off performance
Active Publication Date: 2022-07-15
深圳市美浦森半导体有限公司
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Problems solved by technology
[0004] The technical problem mainly solved by the present invention is that the existing IGBT device has a technical problem of dynamic avalanche during the off-switching process.
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Embodiment 1
[0051] Please refer to figure 1 and Figure 16 , this embodiment provides an IGBT device, including at least one cell, the cell includes a first electrode 9, a second electrode 12 and a semiconductor unit located between the first electrode 9 and the second electrode 12, the semiconductor unit may include: Drift region 1 , first conductivity type region 2 , base region 3 , emitter region 7 , first trench gate 6 , second trench gate 4 , extraction channel 5 , buffer layer 10 and collector region 11 .
[0052] The drift region 1 has the second conductivity type and is used as a depletion layer when the IGBT device is in a forward withstand voltage process. For example, in this embodiment, the first conductivity type is P-type and the second conductivity type is N-type as an example. In this case, an N-type single crystal silicon substrate can be used as the drift region 1 of the device.
[0053] The first conductivity type region 2 has a first conductivity type and extends dow...
Embodiment 2
[0077] see figure 2 , this embodiment provides a method for manufacturing an IGBT device, which is used to manufacture the IGBT device described in the first embodiment. In this embodiment, the first conductivity type is P-type and the second conductivity type is N-type Methods include:
[0078] Step 1: Provide a substrate, the substrate serves as the drift region 1 of the IGBT device, and the substrate has the second conductivity type. For example, an N-type single crystal silicon substrate is provided.
[0079] Step 2: as image 3 and Figure 4 As shown, a first trench 101 is formed on the front surface of the substrate, and a semiconductor material of a first conductivity type is filled in the first trench 101 to obtain a first conductivity type region 2 .
[0080] For example, after the first trench 101 is formed by dry etching, backfilling with P-type single crystal silicon is performed by epitaxy to form the first conductive type region 2, which may be called a P-pi...
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Abstract
An IGBT device and a manufacturing method thereof. The IGBT device includes a drift region, a first conductivity type region, a base region, an emitter region, a first trench gate, a second trench gate, an extraction channel, a buffer layer and a collector region. The first conductivity type region is close to the bottom of the drift region or is flush with the bottom of the drift region; the first electrode is electrically connected to the deep base region through an extraction channel; the extraction channel is used for extracting the first electrode when the IGBT device is in an off state. The channel extracts minority carriers from the bottom of the first trench gate and the second trench gate. Through the first conductivity type region and the extraction channel, when the IGBT device is turned off, the drift region is turned off and the first conductivity type region is turned on, so as to realize the rapid extraction of holes, which can quickly extract unbalanced minority carriers, and can be used in relatively The turn-off operation with high dV / dt is realized under the low dynamic electric field, the turn-off performance is improved, the turn-off loss is reduced, and the dynamic avalanche is suppressed.
Description
technical field [0001] The present invention relates to the technical field of power semiconductor devices, in particular to an IGBT device and a manufacturing method thereof. Background technique [0002] Power electronic systems require not only high energy efficiency ratios, but also low EMI noise in high-frequency applications to achieve system miniaturization and high robustness. During the switching process of the traditional trench gate IGBT, the hot carriers formed in the body will be trapped at the trench gate-oxide interface to form trapped charges. These trapped charges will modulate the switching characteristics, affecting the long-term stability of the gate switch. Electric field concentration and hole accumulation are important factors that cause dynamic avalanche, and it is easy to cause device failure under high di / dt conditions. [0003] The existing IEGT is made of a floating shielding gate, and a large number of minority carriers are accumulated on the f...
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