Sense amplifier and method for generating variable reference level

Abstract

In the sense amplifier and method for generating a variable reference level, the sense amplifier changes the reference voltage level according to changes in the operating voltage. This ensures that the on-cell and off-cell edges required to detect data are maintained sufficient regardless of changes in the operating voltage in the semiconductor memory device. This avoids read errors due to insufficient voltage detection edges.

Description

[0001] This U.S. nonprovisional patent application claims priority to Korean Patent Application 2004-16253, filed March 10, 2004, and Korean Patent Application 2004-56509, filed July 20, 2004, under 35 U.S.C. §119, and thus each The entire content of this application is incorporated by reference. technical field [0002] The present invention relates to a sense amplifier of a semiconductor memory device, and more particularly to a sense amplifier and method for changing a reference level in a sense amplifier for detecting data. Background technique [0003] As memory capacity tends to increase, errors may occur while reading data due to relatively weak data signals and a long delay time before the bit line voltage turns to a stable level. Therefore, it is common for a memory device to use a sense amplifier to amplify the signal level of data to provide a more stable read operation, but requires a lower power level by reducing the delay time of the bit line. U.S. Patent No. ...

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Problems solved by technology

Also, in this case, it is difficult for the sense amplifier to detect the on-state of the core cell

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